IRG7PG42UDPbF
IRG7PG42UD-EPbF
INSULATED GATE BIPOLAR TRANSISTOR
C
Features
Low VCE (ON) trench IGBT technology
Low switching losses
Square RBSOA
100% of the parts tested for ILM
Positive VCE (ON) temperature co-efficient
Ultra fast soft recovery co-pak diode
Tight parameter distribution
Lead-free package
Benefits
High efficiency in a wide range of applications
Suitable for a wide range of switching frequencies
due to low VCE(on) and low switching losses
Rugged transient performance for increased reliability
Excellent current sharing in parallel operation
Applications
U.P.S.
Welding
Solar Inverter
Induction heating
Base part number
Package Type
IRG7PG42UDPbF
IRG7PG42UD-EPbF
TO-247AC
TO-247AD
IC = 45A, TC = 100°C
G
TJ(MAX) = 150°C
VCE(ON) typ. = 1.7V @ IC = 30A
E
n-channel
C
C
E
C
G
IRG7PG42UDPbF
TO-247AC
G
Gate
Tube
Tube
IRG7PG42UD-EPbF
TO-247AD
IRG7PG42UDPbF
IRG7PG42UD-EPbF
Max.
1000
85
45
90
120
85
45
120
±30
320
130
-55 to +150
Units
V
A
V
W
°C
300 (0.063 in.(1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal Resistance
© 2014 International Rectifier
E
Emitter
Orderable Part Number
25
25
Mounting Torque, 6-32 or M3 Screw
Parameter
RθJC (IGBT) Junction-to-Case (IGBT)
RθJC (Diode) Junction-to-Case (Diode)
RθCS
Case-to-Sink (flat, greased surface)
RθJA
Junction-to-Ambient (typical socket mount)
E
C
Parameter
Collector-to-Emitter Voltage
VCES
IC @ TC = 25°C
Continuous Collector Current (Silicon Limited)
IC @ TC = 100°C Continuous Collector Current (Silicon Limited)
ICM
Pulse Collector Current, VGE = 15V
ILM
Clamped Inductive Load Current, VGE = 20V
IF @ TC = 25°C
Diode Continuous Forward Current
IF @ TC = 100°C Diode Continuous Forward Current
IFM
Diode Maximum Forward Current
VGE
Continuous Gate-to-Emitter Voltage
PD @ TC = 25°C Maximum Power Dissipation
PD @ TC = 100°C Maximum Power Dissipation
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
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G
C
Collector
Standard Pack
Form
Quantity
Absolute Maximum Ratings
1
VCES = 1000V
Min.
–––
–––
–––
–––
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Typ.
–––
–––
0.24
–––
Max.
0.39
0.56
–––
40
Units
°C/W
April 29, 2014
IRG7PG42UDPbF/IRG7PG42UD-EPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
V(BR)CES
Collector-to-Emitter Breakdown Voltage
1000
—
—
0.18
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage
VCE(on)
Collector-to-Emitter Saturation Voltage
—
1.7
—
2.1
VGE(th)
Gate Threshold Voltage
3.0
—
—
-14
VGE(th)/TJ Threshold Voltage temp. coefficient
gfe
Forward Transconductance
—
32
ICES
Collector-to-Emitter Leakage Current
—
4.4
—
1200
VFM
Diode Forward Voltage Drop
—
2.0
—
2.2
IGES
Gate-to-Emitter Leakage Current
—
—
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Qg
Total Gate Charge
—
157
Qge
Gate-to-Emitter Charge
—
21
Qgc
Gate-to-Collector Charge
—
69
Eon
Turn-On Switching Loss
—
2105
Eoff
Turn-Off Switching Loss
—
1182
Etotal
Total Switching Loss
—
3287
td(on)
Turn-On delay time
—
25
tr
Rise time
—
32
td(off)
Turn-Off delay time
—
229
tf
Fall time
—
63
Eon
Turn-On Switching Loss
—
2978
Eoff
Turn-Off Switching Loss
—
1968
Etotal
Total Switching Loss
—
4946
td(on)
Turn-On delay time
—
19
tr
Rise time
—
32
td(off)
Turn-Off delay time
—
290
tf
Fall time
—
154
Cies
Input Capacitance
—
3338
Coes
Output Capacitance
—
124
Cres
Reverse Transfer Capacitance
—
75
RBSOA
Reverse Bias Safe Operating Area
Erec
trr
Irr
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
Max. Units
Conditions
—
V
VGE = 0V, IC = 100µA
—
V/°C VGE = 0V, IC = 2.0mA (25°C-150°C)
2.0
V
IC = 30A, VGE = 15V, TJ = 25°C
—
IC = 30A, VGE = 15V, TJ = 150°C
6.0
V
VCE = VGE, IC = 1.0mA
—
mV/°C VCE=VGE, IC = 1.0mA (25°C - 150°C)
—
S
VCE = 50V, IC = 30A, PW = 80µs
100
µA
VGE = 0V, VCE = 1000V
—
VGE = 0V, VCE = 1000V, TJ = 150°C
2.4
V
IF = 30A
—
IF = 30A, TJ = 150°C
±100
nA VGE = ±30V
Max. Units
Conditions
—
IC = 30A
nC VGE = 15V
—
VCC = 600V
—
—
µJ
IC = 30A, VCC = 600V, VGE = 15V
—
—
RG = 10, L = 200µH, TJ = 25°C
Energy losses include tail & diode
—
ns
reverse recovery
—
—
—
—
µJ
IC = 30A, VCC = 600V, VGE = 15V
—
—
RG = 10, L = 200µH, TJ = 150°C
Energy losses include tail & diode
—
ns
reverse recovery
—
—
—
—
VGE = 0V
pF VCC = 30V
—
f = 1.0Mhz
—
TJ = 150°C, IC = 120A
FULL SQUARE
VCC = 800V, Vp ≤ 1000V
Rg = 10, VGE = +20V to 0V
—
1475
—
µJ
TJ = 150°C
VCC = 600V, IF = 30A
—
153
—
ns
—
34
—
A
Rg = 10L = 1.0mH
Notes:
VCC = 80% (VCES), VGE = 20V, L = 22µH, RG = 10.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
R is measured at TJ of approximately 90°C.
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 78A. Note
that current limitations arising from heating of the device leads may occur with some lead mounting arrangements.
2
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IRG7PG42UDPbF/IRG7PG42UD-EPbF
60
For both:
Duty cycle : 50%
Tj = 150°C
Tsink = 90°C
Gate drive as specified
Power Dissipation = 95W
Load Current ( A )
50
40
30
20
10
0
0.1
1
10
100
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
350
300
80
250
Ptot (W)
IC (A)
60
40
200
150
100
20
50
0
0
25
50
75
100
125
150
0
175
20
40
60
80
100
120
140
160
T C (°C)
T C (°C)
Fig. 3 - Power Dissipation vs.
Case Temperature
Fig. 2 - Maximum DC Collector Current vs.
Case Temperature
1000
1000
100
100
IC (A)
IC (A)
10µsec
10
100µsec
DC
1
1msec
Tc = 25°C
Tj = 150°C
Single Pulse
1
0.1
1
10
100
1000
10000
VCE (V)
Fig. 4 - Forward SOA
TC = 25°C, TJ ≤ 150°C; VGE = 15V
3
10
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© 2014 International Rectifier
10
100
1000
10000
VCE (V)
Fig. 5 - Reverse Bias SOA
TJ = 150°C; VGE = 20V
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IRG7PG42UDPbF/IRG7PG42UD-EPbF
120
120
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
100
100
80
ICE (A)
ICE (A)
80
60
60
40
40
20
20
0
0
0
2
4
6
8
10
0
2
4
10
Fig. 6 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80µs
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80µs
120
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
100
-40°C
25°C
150°C
80
IF (A)
80
60
60
40
40
20
20
0
0
0
2
4
6
8
10
0.0
1.0
2.0
3.0
VCE (V)
12
10
10
6.0
8
VCE (V)
ICE = 15A
ICE = 30A
ICE = 60A
6
5.0
Fig. 9 - Typ. Diode Forward Voltage Drop
Characteristics
12
8
4.0
VF (V)
Fig. 8 - Typ. IGBT Output Characteristics
TJ = 150°C; tp = 80µs
VCE (V)
8
VCE (V)
100
ICE = 15A
ICE = 30A
ICE = 60A
6
4
4
2
2
0
0
4
4
6
VCE (V)
120
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
8
12
16
20
4
8
12
16
VGE (V)
VGE (V)
Fig. 10 - Typical VCE vs. VGE
TJ = -40°C
Fig. 11 - Typical VCE vs. VGE
TJ = 25°C
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20
April 29, 2014
IRG7PG42UDPbF/IRG7PG42UD-EPbF
120
ICE, Collector-to-Emitter Current (A)
12
10
VCE (V)
8
ICE = 15A
ICE = 30A
ICE = 60A
6
4
2
100
80
T J = 25°C
T J = 150°C
60
40
20
0
0
4
8
12
16
4
20
6
VGE (V)
10
12
Fig. 13 - Typ. Transfer Characteristics
VCE = 50V
Fig. 12 - Typical VCE vs. VGE
TJ = 150°C
1000
7000
6000
tF
Swiching Time (ns)
5000
Energy (µJ)
8
VGE, Gate-to-Emitter Voltage (V)
4000
EON
3000
2000
td OFF
100
tR
EOFF
1000
td ON
10
0
0
10
20
30
40
50
0
60
10
20
30
Fig. 14 - Typ. Energy Loss vs. IC
TJ = 150°C; L = 200µH; VCE = 600V, RG = 10; VGE = 15V
40
50
60
IC (A)
I C (A)
Fig. 15 - Typ. Switching Time vs. IC
TJ = 150°C; L = 200µH; VCE = 600V, RG = 10; VGE = 15V
10000
6000
Swiching Time (ns)
Energy (µJ)
5000
EON
4000
EOFF
3000
1000
td OFF
tF
100
tR
2000
td ON
10
1000
0
20
40
60
80
100
0
20
40
60
80
100
RG ()
RG ()
Fig. 16 - Typ. Energy Loss vs. RG
TJ = 150°C; L = 200µH; VCE = 600V, ICE = 30A; VGE = 15V
Fig. 17 - Typ. Switching Time vs. RG
TJ = 150°C; L = 200µH; VCE = 600V, ICE = 30A; VGE = 15V
5
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IRG7PG42UDPbF/IRG7PG42UD-EPbF
50
40
R G =
35
RG =
RG =
IRR (A)
IRR (A)
40
30
RG =
20
30
25
10
20
15
20
25
30
35
40
45
50
55
60
0
20
40
IF (A)
80
100
Fig. 19 - Typ. Diode IRR vs. RG
TJ = 150°C
Fig. 18 - Typ. Diode IRR vs. IF
TJ = 150°C
9000
40
8000
35
60A
7000
QRR (nC)
IRR (A)
60
RG (
30
6000
5000
30A
4000
25
15A
3000
2000
20
0
200
400
600
800
1000
0
1200
200
400
600
800
1000 1200 1400
diF /dt (A/µs)
diF /dt ( A/µs)
Fig. 20 - Typ. Diode IRR vs. diF/dt
VCC = 600V; VGE = 15V; IF = 30A; TJ = 150°C
Fig. 21 - Typ. Diode QRR vs. diF/dt
VCC = 600V; VGE = 15V; TJ = 150°C
3500
Energy (µJ)
RG = 5.0
3000
RG = 10
RG = 47
2500
RG = 100
2000
1500
1000
500
15
20
25
30
35
40
45
50
55
60
IF (A)
Fig. 22 - Typ. Diode ERR vs. IF
TJ = 150°C
6
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IRG7PG42UDPbF/IRG7PG42UD-EPbF
16
10000
VGE, Gate-to-Emitter Voltage (V)
14
Capacitance (pF)
Cies
1000
100
Coes
VCES = 600V
VCES = 400V
12
10
Cres
8
6
4
2
0
10
0
100
200
300
400
500
0
600
20
40
60
80 100 120 140 160 180
Q G, Total Gate Charge (nC)
VCE (V)
Fig. 23 - Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
Fig. 24 - Typical Gate Charge vs. VGE
ICE = 30A
1
Thermal Response ( Z thJC )
D = 0.50
0.1
0.20
0.10
0.05
0.01
J
0.02
0.01
R1
R1
J
1
R2
R2
R3
R3
R4
R4
C
2
1
3
2
4
3
Ri (°C/W)
i (sec)
0.1306
0.000313
0.1752
0.002056
0.0814
0.008349
0.0031
0.043100
C
4
Ci= iRi
Ci= iRi
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig. 25 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
1
Thermal Response ( Z thJC )
D = 0.50
0.20
0.1
0.10
0.05
J
0.02
0.01
0.01
R1
R1
J
1
R2
R2
R3
R3
C
2
1
2
3
Ri (°C/W)
i (sec)
0.1254
0.000515
0.0937
0.000515
0.1889
0.001225
0.1511
0.018229
R4
R4
4
3
C
4
Ci= iRi
Ci= iRi
0.001
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
1E-006
1E-005
0.0001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 26 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
7
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IRG7PG42UDPbF/IRG7PG42UD-EPbF
L
L
0
80 V +
VCC
DUT
-
DUT
1K
VCC
Rg
Fig.C.T.2 - RBSOA Circuit
Fig.C.T.1 - Gate Charge Circuit (turn-off)
diode clamp /
DUT
C force
L
100K
D1
-5V
22K
C sense
DUT /
DRIVER
VCC
DUT
G force
0.0075µF
Rg
E sense
E force
Switching Loss
Fig.C.T.3 - Switching Loss Circuit
Fig.C.T.4 - BVCES Filter Circuit
900
90
800
80
tf
700
70
600
60
50
90% ICE
400
300
40
30
5% V C E
200
20
5% IC E
100
10
0
-100
-0.5
ICE (A)
VC E (V)
500
0
Eof f Loss
0
0.5
1
-10
1.5
2
time(µs)
Fig. WF1 - Typ. Turn-off Loss Waveform
@ TJ = 150°C using Fig. CT.3
8
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IRG7PG42UDPbF/IRG7PG42UD-EPbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
Notes: This part marking information applies to devices produced after 02/26/2001
EXAMPLE: THIS IS AN IRFPE30
WITH ASSEMBLY
LOT CODE 5657
ASSEMBLED ON WW 35, 2001
IN THE ASSEMBLY LINE "H"
Note: "P" in assembly line position
indicates "Lead-Free"
INTERNATIONAL
RECTIFIER
LOGO
PART NUMBER
IRFPE30
56
135H
57
ASSEMBLY
LOT CODE
DATE CODE
YEAR 1 = 2001
WEEK 35
LINE H
TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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IRG7PG42UDPbF/IRG7PG42UD-EPbF
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
TO-247AD Part Marking Information
E X A M P L E : T H IS IS A N IR G P 3 0 B 1 2 0 K D - E
W IT H A S S E M B L Y
LO T C O D E 5657
ASSEM B LED O N W W 35, 2000
IN T H E A S S E M B L Y L IN E "H "
N o te : "P " in a s s e m b ly lin e p o s itio n
in d ic a te s "L e a d - F re e "
PART N U M BER
IN T E R N A T IO N A L
R E C T IF IE R
LO G O
56
035H
57
ASSEM B LY
LO T C O D E
D A TE C O D E
YE A R 0 = 2 0 0 0
W EEK 35
L IN E H
TO-247AD package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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IRG7PG42UDPbF/IRG7PG42UD-EPbF
Qualification Information†
Industrial
Qualification Level
Moisture Sensitivity Level
TO-247AC
(per JEDEC JESD47F) ††
N/A
TO-247AD
N/A
Yes
RoHS Compliant
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
††
Applicable version of JEDEC standard at the time of product release.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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