IRG7PH28UD1MPBF

IRG7PH28UD1PbF IRG7PH28UD1MPbF   INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features  Low VCE (ON) trench IGBT technology  Low switching losses  Square RBSOA  Ultra-low VF diode  1300Vpk repetitive transient capacity  100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient  Tight parameter distribution  Lead-free package Package Type IRG7PH28UD1PbF IRG7PH28UD1MPbF TO-247AC TO-247AD 1 www.irf.com © 2012 International Rectifier TJ(MAX) = 150°C VCE(ON) typ. = 1.95V E n-channel   G G C G IRG7PH28UD1PbF TO-247AC G Gate Tube Tube E C G 25 25 E IRG7PH28UD1MPbF TO-247AD C Collector Standard Pack Form Quantity Parameter Collector-to-Emitter Voltage Repetitive Transient Collector-to-Emitter Voltage  Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE = 15V  Clamped Inductive Load Current, VGE = 20V  Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current  Continuous Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw VCES = 1200V G Absolute Maximum Ratings VCES V(BR) Transient IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG   IC = 15A, TC = 100°C Benefits  Device optimized for induction heating and soft switching applications  High efficiency due to low VCE(ON), low switching losses and ultra-low VF  Rugged transient performance for increased reliability  Excellent current sharing in parallel operation  Low EMI Base part number  C E Emitter Orderable Part Number IRG7PH28UD1PbF IRG7PH28UD1MPbF     Max. 1200 1300 30 15 100 60 30 15 60 ±30 115 46 -55 to +150 Units V A V W °C 300 (0.063 in.(1.6mm) from case) 10 lbf·in (1.1 N·m) January 8, 2013 IRG7PH28UD1PbF/IRG7PH28UD1MPbF     Thermal Resistance Parameter Min. ––– ––– ––– ––– RθJC (IGBT) Junction-to-Case (IGBT)  RθJC (Diode) Junction-to-Case (Diode)  RθCS Case-to-Sink (flat, greased surface) Junction-to-Ambient (typical socket mount) RθJA Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 1200 — V(BR)CES — 1.4 V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage VCE(on) Collector-to-Emitter Saturation Voltage — 1.95 — 2.4 VGE(th) Gate Threshold Voltage 3.0 — gfe Forward Transconductance — 13 ICES Collector-to-Emitter Leakage Current — 1.0 — 100     VFM Diode Forward Voltage Drop — 1.1 — 1.0 IGES Gate-to-Emitter Leakage Current — — Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Total Gate Charge (turn-on) — 60 Qg Qge Gate-to-Emitter Charge (turn-on) — 10 Gate-to-Collector Charge (turn-on) — 27 Qgc Turn-Off Switching Loss — 543 Eoff td(off) tf Eoff Turn-Off delay time Fall time Turn-Off Switching Loss — — — td(off) tf Cies Coes Cres Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — — — RBSOA Reverse Bias Safe Operating Area Max. Units — V — V/°C 2.30 V —   6.0 V — S 100 µA — 1.2 V — ±100 nA   Typ. ––– ––– 0.24 –––   Max. 1.09 1.35 ––– 40 Units °C/W Conditions VGE = 0V, IC = 100µA  VGE = 0V, IC = 1mA (25°C-150°C) IC = 15A, VGE = 15V, TJ = 25°C IC = 15A, VGE = 15V, TJ = 150°C VCE = VGE, IC = 350µA VCE = 50V, IC = 15A, PW = 20µs VGE = 0V, VCE = 1200V VGE = 0V, VCE = 1200V, TJ = 150°C IF = 15A IF = 15A, TJ = 150°C VGE = ±30V Max. Units Conditions 90 IC = 15A nC  VGE = 15V 15 VCC = 600V 40   766 µJ IC = 15A, VCC = 600V, VGE = 15V RG = 22, L = 1.0mH, TJ = 25°C 229 — ns  Energy losses include tail & diode  reverse recovery 62 —   939 — µJ IC = 15A, VCC = 600V, VGE=15V RG = 22, L = 1.0mH, TJ = 150°C Energy losses include tail & diode  272 — ns reverse recovery 167 —   1160 — VGE = 0V pF VCC = 30V 55 — f = 1.0Mhz 30 — TJ = 150°C, IC = 60A FULL SQUARE VCC = 960V, Vp ≤ 1200V Rg = 22, VGE = +20V to 0V Notes:  VCC = 80% (VCES), VGE = 20V, L = 25µH, RG = 22.  Pulse width limited by max. junction temperature.  Refer to AN-1086 for guidelines for measuring V(BR)CES safely.  R is measured at TJ of approximately 90°C.  FBSOA operating conditions only.  VGE = 0V, TJ = 75°C, PW ≤ 10µs. 2 www.irf.com © 2012 International Rectifier January 8, 2013 IRG7PH28UD1PbF/IRG7PH28UD1MPbF 30 120 25 100 20 80 Ptot (W) IC (A)   15 60 10 40 5 20 0 0 25 50 75 100 125 25 150 50 75 4.2 100 IC = 350µA 4.0 3.8 3.6 IC (A) V GE(th), Gate Threshold Voltage 150 Fig. 2 - Power Dissipation vs. Case Temperature Fig. 1 - Maximum DC Collector Current vs. Case Temperature 3.4 10 3.2 3.0 2.8 2.6 1 25 50 75 100 125 10 150 100 60 60 50 50 ICE (A) V GE = 15V V GE = 12V V GE = 10V 20 V GE = 18V 40 V GE = 18V 30 10000 Fig. 4 - Reverse Bias SOA TJ = 150°C; VGE = 20V Fig. 3 - Typical Gate Threshold Voltage vs. Junction Temperature 40 1000 V CE (V) TJ , Temperature (°C) ICE (A) 125 TC (°C) TC (°C) V GE = 15V V GE = 12V 30 V GE = 10V V GE = 8.0V 20 V GE = 8.0V 10 10 0 0 0 3 100 2 4 6 8 10 0 2 4 6 8 10 V CE (V) V CE (V) Fig. 5 - Typ. IGBT Output Characteristics TJ = -40°C; tp = 20µs Fig. 6 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 20µs www.irf.com © 2012 International Rectifier January 8, 2013 IRG7PH28UD1PbF/IRG7PH28UD1MPbF   60 100 V GE = 18V V GE = 15V 50 V GE = 12V 40 V GE = 10V 10 IF (A) ICE (A) V GE = 8.0V 30 20 1 25°C 150°C 10 0 0.1 0 2 4 6 8 10 0.2 0.4 0.6 0.8 V CE (V) 12 10 10 ICE = 7.5A ICE = 15A V CE (V) V CE (V) 8 ICE = 30A 1.8 ICE = 30A 4 2 2 0 5 10 15 20 5 10 Fig. 9 - Typical VCE vs. VGE TJ = -40°C 70 10 60 ICE = 7.5A ICE = 15A 50 ICE = 30A 40 ICE (A) 6 20 Fig. 10 - Typical VCE vs. VGE TJ = 25°C 12 8 15 V GE (V) V GE (V) V CE (V) 1.6 ICE = 7.5A ICE = 15A 6 4 0 4 30 TJ = 150°C 20 2 TJ = 25°C 10 0 0 5 4 1.4 Fig. 8 - Typ. Diode Forward Voltage Drop Characteristics 12 6 1.2 VF (V) Fig. 7 - Typ. IGBT Output Characteristics TJ = 150°C; tp = 20µs 8 1.0 10 15 20 4 5 6 7 8 9 10 11 12 V GE (V) V GE (V) Fig. 11 - Typical VCE vs. VGE TJ = 150°C Fig. 12 - Typ. Transfer Characteristics VCE = 50V; tp = 20µs www.irf.com © 2012 International Rectifier January 8, 2013 IRG7PH28UD1PbF/IRG7PH28UD1MPbF   1000 2000 tdOFF Swiching Time (ns) Energy (µJ) 1600 EOFF 1200 800 tF 100 400 10 0 0 5 10 15 20 25 0 30 5 10 15 IC (A) Fig. 13 - Typ. Energy Loss vs. IC TJ = 150°C; L = 1.0mH; VCE = 600V, RG = 22; VGE = 15V 25 30 Fig. 14 - Typ. Switching Time vs. IC TJ = 150°C; L = 1.0mH; VCE = 600V, RG = 22; VGE = 15V 1000 1800 tdOFF 1600 Swiching Time (ns) EOFF 1400 Energy (µJ) 20 IC (A) 1200 tF 100 1000 10 800 0 20 40 60 80 0 100 20 40 Fig. 15 - Typ. Energy Loss vs. RG TJ = 100 Fig. 16 - Typ. Switching Time vs. RG TJ = 150°C; L = 1.0mH; VCE = 600V, ICE = 15A; VGE = 15V 10000 V GE, Gate-to-Emitter Voltage (V) 16 Cies 1000 Capacitance (pF) 80 RG ( ) Rg () 100 Coes Cres 10 14 V CES = 600V 12 V CES = 400V 10 8 6 4 2 0 1 0 5 60 100 200 300 400 500 600 0 10 20 30 40 50 60 70 V CE (V) Q G, Total Gate Charge (nC) Fig. 17 - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz Fig. 18 - Typical Gate Charge vs. VGE ICE = 15A www.irf.com © 2012 International Rectifier January 8, 2013 IRG7PH28UD1PbF/IRG7PH28UD1MPbF   Thermal Response ( Z thJC ) 10 1 D = 0.50 0.20 0.1 0.01 0.10 0.05 0.02 0.01 J 0.0001 1E-006 1E-005 J 1 R2 R2 R3 R3 R4 R4 C 2 1 2 3 4 3 C 4 Ci= iRi Ci= iRi SINGLE PULSE ( THERMAL RESPONSE ) 0.001 R1 R1 Ri (°C/W) i (sec) 0.015352 0.000008 0.360775 0.000223 0.431394 0.002475 0.282479 0.01715 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 19 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) Thermal Response ( Z thJC ) 10 1 D = 0.50 0.20 0.10 0.1 0.05 J 0.02 0.01 R1 R1 J 1 R2 R2 R3 R3 R4 R4 C 2 1 2 3 4 3 Ci= iRi Ci= iRi 0.01 1E-005 0.0001 i (sec) 0.00756 0.000005 0.56517 0.000677 0.54552 0.003514 0.25085 0.019551 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 4 C Ri (°C/W) 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 20 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) 6 www.irf.com © 2012 International Rectifier January 8, 2013 IRG7PH28UD1PbF/IRG7PH28UD1MPbF   L L 0 80 V + VCC DUT - DUT 1K VCC Rg Fig.C.T.2 - RBSOA Circuit Fig.C.T.1 - Gate Charge Circuit (turn-off) diode clamp / DUT C force L 100K D1 -5V 22K C sense DUT / DRIVER VCC DUT G force 0.0075µF Rg E sense E force Switching Loss Fig.C.T.3 - Switching Loss Circuit Fig.C.T.4 - BVCES Filter Circuit 40 800 tf 700 35 30 600 VCE (V) 90% ICE 400 20 300 15 200 10 100 5% ICE 5 5% VCE 0 0 Eoff Loss -100 -0.5 ICE (A) 25 500 0 0.5 -5 1 time(µs) Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 150°C using Fig. CT.3 7 www.irf.com © 2012 International Rectifier January 8, 2013 IRG7PH28UD1PbF/IRG7PH28UD1MPbF   TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information Notes: This part marking information applies to devices produced after 02/26/2001 EXAMPLE: THIS IS AN IRFPE30 WITH ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2001 IN THE ASSEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INTERNATIONAL RECTIFIER LOGO PART NUMBER IRFPE30 56 135H 57 ASSEMBLY LOT CODE DATE CODE YEAR 1 = 2001 WEEK 35 LINE H TO-247AC package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 www.irf.com © 2012 International Rectifier January 8, 2013 IRG7PH28UD1PbF/IRG7PH28UD1MPbF   TO-247AD Package Outline Dimensions are shown in millimeters (inches) E Q A A E2/2 "A" A2 E2 2X D B L1 "A" L SEE VIEW "B" 2x b2 3x b Ø .010 B A c b4 e A1 2x LEAD TIP ØP Ø .010 B A -A- S D1 VIEW: "B" THERMAL PAD PLATING BASE METAL E1 Ø .010 (c) B A VIEW: "A" - "A" (b, b2, b4) SECTION: C-C, D-D, E-E TO-247AD Part Marking Information E X A M P L E : T H IS IS A N IR G P 3 0 B 1 2 0 K D - E W IT H A S S E M B L Y LO T C O D E 5657 ASSEM BLED O N W W 35, 2000 IN T H E A S S E M B L Y L IN E "H " N o te : "P " in a s s e m b ly lin e p o s itio n in d ic a te s "L e a d - F r e e " PART NUM BER IN T E R N A T IO N A L R E C T IF IE R LO G O 56 035H 57 ASSEM BLY LO T CO DE DATE CO D E YEAR 0 = 2000 W EEK 35 L IN E H TO-247AD package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 www.irf.com © 2012 International Rectifier January 8, 2013 IRG7PH28UD1PbF/IRG7PH28UD1MPbF   Qualification Information† Industrial† Qualification Level Moisture Sensitivity Level TO-247AC (per JEDEC JESD47F) †† N/A TO-247AD N/A Yes RoHS Compliant † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ †† Applicable version of JEDEC standard at the time of product release. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 10 www.irf.com © 2012 International Rectifier January 8, 2013