PD - 97479
IRG7PH35UPbF
IRG7PH35U-EP
INSULATED GATE BIPOLAR TRANSISTOR
Features
•
•
•
•
•
•
•
•
C
Low VCE (ON) trench IGBT technology
Low switching losses
Maximum junction temperature 175 °C
Square RBSOA
100% of the parts tested for ILM
Positive VCE (ON) temperature co-efficient
Tight parameter distribution
Lead -Free
VCES = 1200V
I NOMINAL = 20A
G
TJ(max) = 175°C
E
VCE(on) typ. = 1.9V
n-channel
Benefits
• High efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
low VCE (ON) and low switching losses
• Rugged transient performance for increased reliability
• Excellent current sharing in parallel operation
C
C
GC
Applications
•
•
•
•
E
E
GC
TO-247AD
IRG7PH35U-EP
TO-247AC
IRG7PH35UPbF
U.P.S
Welding
Solar inverter
Induction heating
G
Gate
C
Collector
E
Emitter
Absolute Maximum Ratings
Max.
Units
VCES
IC @ TC = 25°C
Collector-to-Emitter Voltage
Continuous Collector Current
Parameter
1200
55
V
IC @ TC = 100°C
Continuous Collector Current
35
INOMINAL
20
ICM
Nominal Current
Pulse Collector Current, VGE=15V
ILM
Clamped Inductive Load Current, VGE=20V
VGE
Continuous Gate-to-Emitter Voltage
±30
PD @ TC = 25°C
Maximum Power Dissipation
210
PD @ TC = 100°C
Maximum Power Dissipation
105
TJ
Operating Junction and
TSTG
Storage Temperature Range
A
60
c
80
V
W
-55 to +175
°C
Soldering Temperature, for 10 sec.
300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
f
Min.
Typ.
Max.
RθJC (IGBT)
Thermal Resistance Junction-to-Case-(each IGBT)
–––
–––
0.70
RθCS
Thermal Resistance, Case-to-Sink (flat, greased surface)
–––
0.24
–––
RθJA
Thermal Resistance, Junction-to-Ambient (typical socket mount)
–––
40
–––
1
Units
°C/W
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3/26/10
IRG7PH35UPbF/IRG7PH35U-EP
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)CES
ΔV(BR)CES/ΔTJ
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
VCE(on)
Collector-to-Emitter Saturation Voltage
VGE(th)
gfe
ICES
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Collector-to-Emitter Leakage Current
IGES
Gate-to-Emitter Leakage Current
ΔVGE(th)/ΔTJ
Min.
Typ.
Max.
Units
1200
—
—
—
—
3.0
—
—
—
—
—
—
1.2
1.9
2.3
2.4
—
-16
22
2.0
2000
—
—
—
2.2
—
—
6.0
—
—
100
—
±100
V
V/°C
V
Conditions
e
VGE = 0V, IC = 250μA
VGE = 0V, IC = 1mA (25°C-150°C)
IC = 20A, VGE = 15V, TJ = 25°C
IC = 20A, VGE = 15V, TJ = 150°C
IC = 20A, VGE = 15V, TJ = 175°C
V
VCE = VGE, IC = 600μA
mV/°C VCE = VGE, IC = 600μA (25°C - 150°C)
S
VCE = 50V, IC = 20A, PW = 30μs
μA
VGE = 0V, VCE = 1200V
VGE = 0V, VCE = 1200V, TJ = 175°C
nA
VGE = ±30V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Min.
Typ.
Max.
Qg
Qge
Qgc
Eon
Eoff
Etotal
td(on)
tr
td(off)
tf
Eon
Eoff
Etotal
td(on)
tr
td(off)
tf
Cies
Coes
Cres
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
85
15
35
1060
620
1680
30
15
160
80
1880
1140
3020
25
20
200
200
1940
60
40
130
20
50
1300
850
2150
50
30
180
105
—
—
—
—
—
—
—
—
—
—
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
Units
nC
μJ
Conditions
IC = 20A
VGE = 15V
VCC = 600V
IC = 20A, VCC = 600V, VGE = 15V
RG = 10Ω, L = 200uH, LS = 150nH, TJ = 25°C
Energy losses include tail & diode reverse recovery
Diode clamp the same as IRG7PH35UDPbF
ns
μJ
IC = 20A, VCC = 600V, VGE=15V
RG=10Ω, L=200uH, LS=150nH, TJ = 175°C
e
Energy losses include tail & diode reverse recovery
Diode clamp the same as IRG7PH35UDPbF
ns
pF
VGE = 0V
VCC = 30V
f = 1.0Mhz
TJ = 175°C, IC = 80A
VCC = 960V, Vp =1200V
Rg = 10Ω, VGE = +20V to 0V
Notes:
VCC = 80% (VCES), VGE = 20V, RG = 10Ω.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Rθ is measured at TJ of approximately 90°C.
2
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IRG7PH35UPbF/IRG7PH35U-EP
45
For both:
Duty cycle : 50%
Tj = 150°C
Tc = 100°C
Gate drive as specified
Power Dissipation = 70W
40
Load Current ( A )
35
30
25
Square Wave:
20
V CC
15
I
10
Diode as specified
5
0
0.1
1
10
100
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
60
250
50
200
Ptot (W)
IC (A)
40
30
20
10
150
100
50
0
25
50
75
100
125
150
0
175
0
25
50
TC (°C)
75
100
125
150
175
TC (°C)
Fig. 2 - Maximum DC Collector Current vs.
Case Temperature
Fig. 3- Power Dissipation vs. Case
Temperature
100
1000
10 μs
100 μs
1
IC (A)
100
IC (A)
10
10
1ms
DC
0.1
1
10
100
1000
V CE (V)
Fig. 4 - Forward SOA
TC = 25°C, TJ ≤ 175°C; VGE =15V
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10000
1
10
100
1000
10000
VCE (V)
Fig. 5 - Reverse Bias SOA
TJ = 175°C; VGE = 20V
3
IRG7PH35UPbF/IRG7PH35U-EP
80
80
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
60
ICE (A)
50
70
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
60
50
ICE (A)
70
40
40
30
30
20
20
10
10
0
0
0
2
4
6
8
0
10
2
4
Fig. 6- Typ. IGBT Output Characteristics
TJ = -40°C; tp = 30μs
8
VGE = 18V
VGE = 15V
70
7
VGE = 12V
VGE = 10V
60
50
6
VGE = 8.0V
VCE (V)
ICE (A)
10
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 30μs
80
40
30
5
ICE = 10A
ICE = 20A
4
ICE = 40A
3
20
2
10
1
0
0
2
4
6
8
4
10
8
12
16
Fig. 8 - Typ. IGBT Output Characteristics
TJ = 175°C; tp = 30μs
Fig. 9 - Typical VCE vs. VGE
TJ = -40°C
8
7
7
6
6
ICE = 10A
5
ICE = 40A
VCE (V)
8
5
ICE = 10A
ICE = 20A
4
20
VGE (V)
VCE (V)
VCE (V)
8
VCE (V)
VCE (V)
ICE = 40A
ICE = 20A
4
3
3
2
2
1
1
5
10
15
VGE (V)
Fig. 10 - Typical VCE vs. VGE
TJ = 25°C
4
6
20
5
10
15
20
VGE (V)
Fig. 11 - Typical VCE vs. VGE
TJ = 175°C
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IRG7PH35UPbF/IRG7PH35U-EP
4000
80
IC, Collector-to-Emitter Current (A)
70
60
3000
Energy (μJ)
50
40
TJ = 175°C
30
2000
EOFF
20
1000
TJ = 25°C
10
0
4
5
6
7
8
9
0
10
0
VGE, Gate-to-Emitter Voltage (V)
10
20
30
40
I C (A)
Fig. 12 - Typ. Transfer Characteristics
VCE = 50V, tp = 30μs
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 680μH; VCE = 600V, RG = 10Ω; VGE = 15V
1000
3500
tdOFF
3000
EON
tF
100
2500
Energy (μJ)
Swiching Time (ns)
EON
tdON
2000
EOFF
1500
10
tR
1000
500
1
0
10
20
30
0
40
IC (A)
Fig. 14 - Typ. Switching Time vs. IC
TJ = 175°C; L = 680μH; VCE = 600V, RG = 10Ω; VGE = 15V
20
40
60
80
100
RG (Ω)
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 680μH; VCE = 600V, ICE = 20A; VGE = 15V
10000
10000
1000
Capacitance (pF)
Swiching Time (ns)
Cies
tdOFF
tF
100
1000
100
Coes
tdON
tR
10
0
Cres
10
20
40
60
80
100
RG (Ω)
Fig. 16 - Typ. Switching Time vs. RG
TJ = 175°C; L = 680μH; VCE = 600V, ICE = 20A; VGE = 15V
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0
100
200
300
400
500
600
VCE (V)
Fig. 17 - Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
5
VGE(th), Gate Threshold Voltage (Normalized)
IRG7PH35UPbF/IRG7PH35U-EP
VGE, Gate-to-Emitter Voltage (V)
16
14
VCES = 600V
VCES = 400V
12
10
8
6
4
2
0
0
20
40
60
80
1.0
IC = 600μA
0.8
0.6
0.4
25
100
50
75
100
125
150
175
TJ , Temperature (°C)
Q G, Total Gate Charge (nC)
Fig. 19 - Typical Gate Threshold Voltage
(Normalized) vs. Junction Temperature
Fig. 18 - Typical Gate Charge vs. VGE
ICE = 20A; L = 2.4mH
1
Thermal Response ( Z thJC )
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
τJ
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
R1
R1
τJ
τ1
R2
R2
R3
R3
Ri (°C/W)
R4
R4
τC
τ
τ1
τ2
τ2
τ3
τ3
Ci= τi/Ri
Ci i/Ri
τ4
τ4
τi (sec)
0.017
0.000013
0.218
0.000141
0.299
0.002184
0.177
0.013107
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 20. Maximum Transient Thermal Impedance, Junction-to-Case
6
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IRG7PH35UPbF/IRG7PH35U-EP
L
L
DUT
0
80 V +
VCC
DUT
-
Vclamped
Rg
1K
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
R = VCC
ICM
DIODE CLAMP
L
DUT
DUT /
DRIVER
VCC
VCC
Rg
Rg
Fig.C.T.3 - Switching Loss Circuit
Fig.C.T.4 - Resistive Load Circuit
C fo rce
100K
D1
22K
C sense
0.0075μ
G force
DUT
E sense
E fo rce
Fig.C.T.5 - BVCES Filter Circuit
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7
IRG7PH35UPbF/IRG7PH35U-EP
600
90% ICE
V CE (V)
500
400
300
5% ICE
100
0
-100
-0.5
Eoff Loss
0.5
30
600
25
500
20
400
1.5
Fig. WF1 - Typ. Turn-off Loss Waveform
@ TJ = 175°C using Fig. CT.4
70
tr
TEST CURRENT
200
5
100
0
0
60
50
40
90% test current
300
10
-5
time(μs)
8
700
15
5% VCE
200
35
80
30
I CE (A)
tf
800
VCE (V)
700
40
I CE (A)
800
20
10% test current
5% VCE
10
0
Eon Loss
-100
-0.5
-10
-0.3 -0.1
0.1
0.3
0.5
time (μs)
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4
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IRG7PH35UPbF/IRG7PH35U-EP
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
EXAMPLE: THIS IS AN IRFPE30
WITH AS SEMBLY
LOT CODE 5657
ASS EMBLED ON WW 35, 2001
IN THE AS SEMBLY LINE "H"
Note: "P" in as sembly line pos ition
indicates "Lead-Free"
INTERNAT IONAL
RECT IFIER
LOGO
PART NUMBER
IRFPE30
56
ASS EMBLY
LOT CODE
135H
57
DATE CODE
YEAR 1 = 2001
WEEK 35
LINE H
TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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9
IRG7PH35UPbF/IRG7PH35U-EP
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
TO-247AD Part Marking Information
EXAMPLE: T HIS IS AN IRGP30B120KD-E
WIT H AS S EMBLY
LOT CODE 5657
AS S EMBLED ON WW 35, 2000
IN T HE AS S EMBLY LINE "H"
Note: "P" in as sembly line pos ition
indicates "Lead-Free"
INT ERNAT IONAL
RECT IFIER
LOGO
PART NUMBER
56
AS S EMBLY
LOT CODE
035H
57
DAT E CODE
YEAR 0 = 2000
WEEK 35
LINE H
TO-247AD package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 03/2010
10
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