IRG7PH35UD1MPBF

IRG7PH35UD1MPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • C Low VCE (ON) trench IGBT Technology Low Switching Losses Square RBSOA Ultra-Low VF Diode 1300Vpk Repetitive Transient Capacity 100% of the Parts Tested for ILM Positive VCE (ON) Temperature Co-Efficient Tight Parameter Distribution Lead Free Package VCES = 1200V IC = 25A, TC = 100°C G TJ(max) = 150°C E VCE(on) typ. = 1.9V @ IC = 20A n-channel Benefits C • Device optimized for induction heating and soft switching applications • High Efficiency due to Low VCE(on), low switching losses and Ultra-low VF • Rugged transient performance for increased reliability • Excellent current sharing in parallel operation • Low EMI GC TO-247AD G Gate Base part number Package Type IRG7PH35UD1MPbF TO-247AD E C Collector Standard Pack Form Quantity Tube 25 E Emitter Orderable part number IRG7PH35UD1MPbF Absolute Maximum Ratings Parameter V CES Collector-to-Emitter Voltage V (B R )T r ansient Repetitive Transient Collector-to-Emitter Voltage IC @ TC = 25°C Continuous Collector Current IC @ TC = 100°C Continuous Collector Current ICM Pulse Collector Current, V GE=15V h Max. Units 1200 V 1300 50 dg ILM Clamped Inductive Load Current, VGE=20V IF @ TC = 25°C Diode Continous Forward Current IF @ TC = 100°C Diode Continous Forward Current IF M Diode Maximum Forward Current 25 150 c A 80 50 25 d 80 V GE Continuous Gate-to-Emitter Voltage ±30 V P D @ TC = 25°C Maximum Power Dissipation 179 W P D @ TC = 100°C Maximum Power Dissipation 71 TJ Operating Junction and TSTG Storage Temperature Range -55 to +150 °C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m) Thermal Resistance Parameter Min. Typ. Max. ––– ––– 0.70 ––– ––– 1.35 Rθ JC (Diode) f Thermal Resistance Junction-to-Case-(each Diode) f Rθ CS Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.24 ––– Rθ JA Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– 40 ––– Rθ JC (IGBT) 1 Thermal Resistance Junction-to-Case-(each IGBT) www.irf.com © 2013 International Rectifier Units °C/W April 24, 2013 IRG7PH35UD1MPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units 1200 — — V T emperatureCoeff. of Breakdown Voltage — 1.2 — Collector-to-Emitter Saturation Voltage — 1.9 2.2 — 2.3 — V(BR)CES Collector-to-Emitter Breakdown Voltage ∆V(B R)CES /∆T J VCE(on) Conditions VGE = 0V, I C = 100µA e V/°C VGE = 0V, I C = 1mA (25°C-150°C) V I C = 20A, V GE = 15V, TJ = 25°C I C = 20A, V GE = 15V, TJ = 150°C VGE(th) Gate Threshold Voltage 3.0 — 6.0 V VCE = V GE, IC = 600µA gfe Forward Transconductance — 22 — S VCE = 50V, I C = 20A, PW = 30µs I CES Collector-to-Emitter Leakage Current — 1.0 100 µA — 120 — 1.26 VFM Diode Forward Voltage Drop — 1.15 — 1.08 — I GES Gate-to-Emitter Leakage Current — — ±100 VGE = 0V, VCE = 1200V VGE = 0V, VCE = 1200V, TJ = 150°C V I F = 20A I F = 20A, TJ = 150°C nA VGE = ±30V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Qg Total Gate Charge (turn-on) — 85 130 Qge Gate-to-Emitter Charge (turn-on) — 15 20 Qgc Gate-to-Collector Charge (turn-on) — 35 50 Units Conditions I C = 20A nC VGE = 15V VCC = 600V I C = 20A, V CC = 600V, VGE = 15V Eoff Turn-Off Switching Loss — 620 850 µJ t d(off) Turn-Off delay time — 160 180 ns tf Fall time — 80 105 Eoff Turn-Off Switching Loss — 1120 — µJ RG = 10Ω, L = 200µH,LS = 150nH, TJ = 150°C t d(off) Turn-Off delay time — 190 — ns I C = 20A, V CC = 600V, VGE = 15V pF VGE = 0V RG = 10Ω, L = 200µH,LS = 150nH, TJ = 25°C E nergy los s es include tail IC = 20A, V CC = 600V, VGE = 15V RG = 10Ω, L = 200µH,LS = 150nH, TJ = 25°C IC = 20A, V CC = 600V, VGE=15V E nergy los s es include tail tf Fall time — 210 — Cies Input Capacitance — 1940 — Coes Output Capacitance — 120 — VCC = 30V Cres Reverse Transfer Capacitance — 40 — f = 1.0Mhz RBSOA Reverse Bias Safe Operating Area FULL SQUARE RG = 10Ω, L = 200µH,LS = 150nH, TJ = 150°C TJ = 150°C, I C = 80A VCC = 960V, Vp =1200V Rg = 10Ω, V GE = +20V to 0V Notes:  VCC = 80% (VCES), VGE = 20V, RG = 10Ω. ‚ Pulse width limited by max. junction temperature. ƒ Refer to AN-1086 for guidelines for measuring V(BR)CES safely. „ Rθ is measured at TJ approximately 90°C. … FBSOA operating conditions only. † VGE = 0V, TJ = 75°C, PW ≤ 10µs. 2 www.irf.com © 2012 International Rectifier April 24, 2013 IRG7PH35UD1MPbF 50 200 175 40 150 125 IC (A) Ptot (W) 30 20 100 75 50 10 25 0 0 25 50 75 100 125 150 25 50 75 T C (°C) VGE(th), Gate Threshold Voltage (Normalized) Fig. 1 - Maximum DC Collector Current vs. Case Temperature 125 150 Fig. 2 - Power Dissipation vs. Case Temperature 1.0 1000 IC = 600µA 0.9 100 IC (A) 0.8 0.7 10 0.6 0.5 1 25 50 75 100 125 150 10 100 T J , Temperature (°C) 10000 Fig. 4 - Reverse Bias SOA TJ = 150°C; VGE = 20V 80 80 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 60 50 70 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 60 50 ICE (A) 70 ICE (A) 1000 VCE (V) Fig. 3 - Typical Gate Threshold Voltage (Normalized) vs. Junction Temperature 40 40 30 30 20 20 10 10 0 0 0 2 4 6 8 10 VCE (V) Fig. 5 - Typ. IGBT Output Characteristics TJ = -40°C; tp = 30µs 3 100 T C (°C) www.irf.com © 2012 International Rectifier 0 2 4 6 8 10 VCE (V) Fig. 6 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 30µs April 24, 2013 IRG7PH35UD1MPbF 80 80 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 70 60 60 50 IF (A) ICE (A) 50 70 40 40 30 30 20 20 10 10 0 25°C 150°C 0 0 2 4 6 8 10 0.0 0.5 1.0 Fig. 8 - Typ. Diode Forward Voltage Drop Characteristics 8 8 7 7 6 6 VCE (V) VCE (V) Fig. 7 - Typ. IGBT Output Characteristics TJ = 150°C; tp = 30µs 5 ICE = 10A ICE = 20A 5 ICE = 10A ICE = 20A ICE = 40A 4 ICE = 40A 3 3 2 2 1 1 4 8 12 16 5 20 10 80 7 70 VCE (V) IC, Collector-to-Emitter Current (A) 8 ICE = 10A ICE = 20A ICE = 40A 5 20 Fig. 10 - Typical VCE vs. VGE TJ = 25°C Fig. 9 - Typical VCE vs. VGE TJ = -40°C 6 15 VGE (V) VGE (V) 4 3 2 60 50 40 TJ = 150°C 30 20 T J = 25°C 10 0 1 5 10 15 20 VGE (V) Fig. 11 - Typical VCE vs. VGE TJ = 150°C 4 2.0 VF (V) VCE (V) 4 1.5 www.irf.com © 2012 International Rectifier 4 5 6 7 8 9 10 VGE, Gate-to-Emitter Voltage (V) Fig. 12 - Typ. Transfer Characteristics VCE = 50V; tp = 30µs April 24, 2013 IRG7PH35UD1MPbF 2200 1000 2000 1800 tF Swiching Time (ns) Energy (µJ) 1600 EOFF 1400 1200 1000 800 tdOFF 100 600 400 200 10 0 10 20 30 40 50 0 10 20 30 40 IC (A) IC (A) Fig. 13 - Typ. Energy Loss vs. IC TJ = 150°C; L = 680µH; VCE = 600V, RG = 10Ω; VGE = 15V 2800 Fig. 14 - Typ. Switching Time vs. IC TJ = 150°C; L = 680µH; VCE = 600V, RG = 10Ω; VGE = 15V 10000 2600 Swiching Time (ns) 2400 Energy (µJ) 2200 tdOFF 1000 EOFF 2000 1800 1600 tF 100 1400 1200 1000 10 0 25 50 75 100 125 0 20 Fig. 15 - Typ. Energy Loss vs. RG TJ = 150°C; L = 680µH; VCE = 600V, ICE = 20A; VGE = 15V 80 100 120 Fig. 16 - Typ. Switching Time vs. RG TJ = 150°C; L = 680µH; VCE = 600V, ICE = 20A; VGE = 15V 16 VGE, Gate-to-Emitter Voltage (V) 10000 Cies Capacitance (pF) 60 RG (Ω) Rg (Ω) 1000 100 Coes Cres 14 VCES = 600V VCES = 400V 12 10 8 6 4 2 0 10 0 100 200 300 400 500 600 VCE (V) Fig. 17 - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz 5 40 www.irf.com © 2012 International Rectifier 0 20 40 60 80 100 Q G, Total Gate Charge (nC) Fig. 18 - Typical Gate Charge vs. VGE ICE = 20A; L = 2.4mH April 24, 2013 IRG7PH35UD1MPbF 1 Thermal Response ( Z thJC ) D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 τJ 0.01 R1 R1 τJ τ1 1E-005 R3 R3 R4 R4 τC τ τ2 τ1 τ2 τ3 τ3 Ci= τi/Ri Ci i/Ri SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 R2 R2 0.0001 τ4 τ4 Ri (°C/W) τi (sec) 0.017 0.000013 0.218 0.000141 0.299 0.002184 0.177 0.013107 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 19. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) Thermal Response ( Z thJC ) 10 1 D = 0.50 0.20 0.1 0.10 0.05 τJ 0.02 0.01 R1 R1 τJ τ1 R2 R2 R3 R3 τC τ τ2 τ1 τ2 τ3 τ3 Ci= τi/Ri Ci i/Ri 0.01 1E-005 0.0001 τ4 τ4 Ri (°C/W) τi (sec) 0.00756 0.000005 0.56517 0.000677 0.54552 0.003514 0.25085 0.019551 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 R4 R4 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 20. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) 6 www.irf.com © 2012 International Rectifier April 24, 2013 IRG7PH35UD1MPbF L L DUT 80 V + VCC 0 VCC - 1K DUT VCC Rg Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit C force diode clamp / DUT 100K L D1 22K C sense -5V DUT / DRIVER DUT G force VCC 0.0075µF Rg E sense E force Fig.C.T.4 - BVCES Filter Circuit Fig.C.T.3 - Switching Loss Circuit 800 40 tf 700 35 600 30 90% ICE 25 400 20 300 15 ICE (A) VCE (V) 500 5% V CE 200 10 5% ICE 100 5 0 -100 -0.5 0 Eof f Loss 0 0.5 1 -5 1.5 2 time(µs) Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 150°C using Fig. CT.3 7 www.irf.com © 2012 International Rectifier April 24, 2013 IRG7PH35UD1MPbF TO-247AD Package Outline (Dimensions are shown in millimeters (inches)) E A A E2/2 "A" A2 Q E2 2X D B L1 "A" L SE E VIEW "B" 2x b2 3x b Ø .010 B A c b4 e A1 2x LE AD TIP ØP Ø .010 B A -A- S D1 VIEW: "B" THERMAL PAD PLAT ING BAS E MET AL E1 Ø .010 (c) B A VIEW: "A" - "A" (b, b2, b4) SECT ION: C-C, D-D, E-E TO-247AD Part Marking Information EXAMPLE: T HIS IS AN IRFPE30 WIT H AS S EMBLY LOT CODE 5657 AS S EMBLED ON WW 35, 2001 IN THE AS S EMBLY LINE "H" Note: "P" in as s embly line pos ition indicates "Lead-Free" PART NUMBER INTERNAT IONAL RECTIFIER LOGO IRFPE30 56 135H 57 AS S EMBLY LOT CODE DATE CODE YEAR 1 = 2001 WEEK 35 LINE H TO-247AD package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 www.irf.com © 2012 International Rectifier April 24, 2013 IRG7PH35UD1MPbF Qualification information† Indus trial †† Qualification level (per JE DE C JE S D47F ††† guidelines ) N/A Moisture Sensitivity Level TO-247AD RoHS compliant † †† ††† (per JE DE C J-S TD-020D††† ) Yes Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 9 www.irf.com © 2012 International Rectifier April 24, 2013