IRG7PH37K10DPBF

IRG7PH37K10DPbF IRG7PH37K10D-EPbF   Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V     C G G IC = 25A, TC =100°C tSC 10µs, TJ(max) = 150°C G C VCE(ON) typ. = 1.9V @ IC = 15A G IRG7PH37K10DPbF  TO‐247AC  E n-channel Applications G Gate • Industrial Motor Drive E C Collector C E G IRG7PH37K10D‐EPbF  TO‐247AD  E Emitter • UPS Features Benefits Low VCE(ON) and Switching Losses 10µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 150°C Positive VCE (ON) Temperature Coefficient Base part number Package Type IRG7PH37K10DPBF IRG7PH37K10D-EPBF TO-247AC TO-247AD High Efficiency in a Wide Range of Applications Rugged Transient Performance Increased Reliability Excellent Current Sharing in Parallel Operation Standard Pack Form Quantity Tube 25 Tube 25 Orderable Part Number IRG7PH37K10DPBF IRG7PH37K10D-EPBF Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE=20V Clamped Inductive Load Current, VGE=20V  Diode Continuous Forward Current Diode Continuous Forward Current Continuous Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw Max. Units 1200 45 25 60 60 18 10 ±30 216 86 -40 to +150 V A  V W 300 (0.063 in. (1.6mm) from case) 10 lbf·in (1.1 N·m) C Thermal Resistance RJC (IGBT) RJC (Diode) RCS RJA 1 Parameter Thermal Resistance Junction-to-Case-(each IGBT)  Thermal Resistance Junction-to-Case-(each Diode)  Thermal Resistance, Case-to-Sink (flat, greased surface) Thermal Resistance, Junction-to-Ambient (typical socket mount) www.irf.com © 2013 International Rectifier Min. ––– ––– ––– ––– Submit Datasheet Feedback Typ. ––– ––– 0.24 40 Max. 0.6 1.7 ––– ––– Units °C/W November 4, 2013 IRG7PH37K10DPbF/IRG7PH37K10D-EPbF   Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES V(BR)CES/TJ Parameter Collector-to-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Min. 1200 — Typ. — 0.93 — 1.9 — 2.4 Gate Threshold Voltage 5.0 — VGE(th) Threshold Voltage Temperature Coeff. — -15 VGE(th)/TJ gfe Forward Transconductance — 11 — 1.0 ICES Collector-to-Emitter Leakage Current — 700 Gate-to-Emitter Leakage Current — — IGES — 2.5 Diode Forward Voltage Drop   VF   — 2.4 Switching Characteristics @ TJ = 25°C (unless otherwise specified) Max. — — 2.4 V IC = 15A, VGE = 15V, TJ = 25°C — IC = 15A, VGE = 15V, TJ = 150°C 7.5 V VCE = VGE, IC = 720µA — mV/°C VCE = VGE, IC = 720µA (25°C-150°C) — S VCE = 50V, IC = 15A, PW = 20µs 30 µA VGE = 0V, VCE = 1200V — VGE = 0V, VCE = 1200V, TJ = 150°C ±100 nA VGE = ±30V 3.0 V IF = 6.0A — IF = 6.0A, TJ = 150°C VCE(on) Collector-to-Emitter Saturation Voltage Qg Qge Qgc Eon Eoff Etotal td(on) tr td(off) tf Eon Parameter Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Eoff Etotal td(on) tr td(off) tf Cies Coes Cres Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance RBSOA Reverse Bias Safe Operating Area SCSOA   Short Circuit Safe Operating Area   10  —  —  Erec trr Irr Reverse Recovery Energy of the Diode Diode Reverse Recovery Time Peak Reverse Recovery Current — — — 250 120 15 — — — Min. — — — — — — — — — — — Typ. 90 20 40 1.0 0.6 1.6 50 30 240 80 1.4 — — — — — — — — — 1.1 2.5 35 30 260 270 2000 90 45 Units Conditions V VGE = 0V, IC = 250µA  V/°C VGE = 0V, IC = 2mA (25°C-150°C) Max Units Conditions 135 IC = 15A 30 nC VGE = 15V VCC = 600V 60 1.9 0.8 mJ   IC = 15A, VCC = 600V, VGE=15V 2.7 RG = 10, TJ = 25°C 65 Energy losses include tail & diode 45 ns  reverse recovery  270 100 — — — — — — — — — — FULL SQUARE mJ  ns IC = 15A, VCC = 600V, VGE=15V RG = 10, TJ = 150°C Energy losses include tail & diode reverse recovery   VGE = 0V pF VCC = 30V f = 1.0Mhz TJ = 150°C, IC = 60A VCC = 960V, Vp ≤ 1200V VGE = +20V to 0V TJ = 150°C,VCC = 600V, Vp ≤ 1200V µs   V = +15V to 0V GE µJ ns A TJ = 150°C VCC = 600V, IF = 6.0A VGE = 15V, Rg = 10 Notes:       VCC = 80% (VCES), VGE = 20V. R is measured at TJ of approximately 90°C. Refer to AN-1086 for guidelines for measuring V(BR)CES safely. Maximum limits are based on statistical sample size characterization. Pulse width limited by max. junction temperature. Values influenced by parasitic L and C in measurement. 2 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback November 4, 2013 IRG7PH37K10DPbF/IRG7PH37K10D-EPbF   40 For both: Duty cycle : 50% Tj = 150°C Tcase = 100°C Gate drive as specified Power Dissipation = 86.7W 35 Load Current ( A ) 30 25 20 Square Wave: 15 VCC 10 I 5 Diode as specified 0 0.1 1 10 100 f , Frequency ( kHz ) Fig. 1 - Typical Load Current vs. Frequency 50 250 40 200 30 150 Ptot (W) IC (A) (Load Current = IRMS of fundamental) 20 10 100 50 0 0 25 50 75 100 125 150 25 50 75 TC (°C) 100 125 150 TC (°C) Fig. 3 - Power Dissipation vs. Case Temperature Fig. 2 - Maximum DC Collector Current vs. Case Temperature 100 100 10µsec 100µsec IC (A) IC (A) 10 10 1 1msec Tc = 25°C Tj = 150°C Single Pulse DC 0.1 1 1 10 100 1000 10000 VCE (V) Fig. 4 - Forward SOA TC = 25°C; TJ ≤ 150°C; VGE = 15V 3 www.irf.com © 2013 International Rectifier 10 100 1000 10000 V CE (V) Fig. 5 - Reverse Bias SOA TJ = 150°C; VGE = 20V Submit Datasheet Feedback November 4, 2013 IRG7PH37K10DPbF/IRG7PH37K10D-EPbF   60 60 V GE = 18V V GE = 15V V GE = 12V V GE = 10V V GE = 8.0V 50 30 30 20 20 10 10 0 0 0 2 4 6 8 0 10 2 4 10 V CE (V) Fig. 6 - Typ. IGBT Output Characteristics TJ = -40°C; tp = 20µs Fig. 7 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 20µs V GE = 18V V GE = 15V V GE = 12V V GE = 10V V GE = 8.0V 50 -40°C 25°C 150°C 40 IF (A) 40 30 30 20 20 10 10 0 0 0 2 4 6 8 10 0 1 2 3 V CE (V) 4 5 6 7 VF (V) Fig. 9 - Typ. Diode Forward Voltage Drop Characteristics Fig. 8 - Typ. IGBT Output Characteristics TJ = 150°C; tp = 20µs 12 12 10 10 ICE = 7.5A ICE = 15A 8 ICE = 7.5A ICE = 15A 8 ICE = 30A V CE (V) V CE (V) 8 60 50 6 ICE = 30A 6 4 4 2 2 0 0 5 10 15 20 V GE (V) Fig. 10 - Typical VCE vs. VGE TJ = -40°C 4 6 V CE (V) 60 ICE (A) V GE = 18V V GE = 15V V GE = 12V V GE = 10V V GE = 8.0V 40 ICE (A) ICE (A) 40 50 www.irf.com © 2013 International Rectifier 5 10 15 20 V GE (V) Fig. 11 - Typical VCE vs. VGE TJ = 25°C Submit Datasheet Feedback November 4, 2013 IRG7PH37K10DPbF/IRG7PH37K10D-EPbF   12 60 10 50 ICE = 7.5A ICE = 15A 40 ICE = 30A ICE (A) V CE (V) 8 6 30 4 20 2 10 0 TJ = 25°C TJ = 150°C 0 5 10 15 20 4 6 8 10 12 14 16 V GE (V) V GE (V) Fig. 12 - Typical VCE vs. VGE TJ = 150°C Fig. 13 - Typ. Transfer Characteristics VCE = 50V; tp = 20µs 1000 4.0 tdOFF Swiching Time (ns) Energy (mJ) 3.0 EON 2.0 1.0 tF 100 tdON EOFF tR 10 0.0 0 10 20 0 30 5 10 15 20 25 30 IC (A) IC (A) Fig. 14 - Typ. Energy Loss vs. IC TJ = 150°C; L = 0.62mH; VCE = 600V, RG = 10; VGE = 15V Fig. 15 - Typ. Switching Time vs. IC TJ = 150°C; L = 0.62mH; VCE = 600V, RG = 10; VGE = 15V 1000 2.6 tdOFF Swiching Time (ns) Energy (mJ) 2.2 EON 1.8 EOFF tF 100 tdON 1.4 tR 10 1.0 0 20 40 60 80 100 0 20 40 60 80 100 Rg () RG ( ) Fig. 16 - Typ. Energy Loss vs. RG TJ = 150°C; L = 0.62mH; VCE = 600V, ICE = 15A; VGE = 15V Fig. 17 - Typ. Switching Time vs. RG TJ = 150°C; L = 0.62mH; VCE = 600V, ICE = 15A; VGE = 15V 5 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback November 4, 2013 IRG7PH37K10DPbF/IRG7PH37K10D-EPbF   18 16 16 RG = 5 14 12 RG = 10 10 RG = 47 IRR (A) IRR (A) 14 12 10 8 8 6 RG = 100 4 6 2 4 6 8 10 12 14 0 10 20 30 40 50 60 70 80 90 100 IF (A) RG ( Fig. 18 - Typ. Diode IRR vs. IF TJ = 150°C Fig. 19 - Typ. Diode IRR vs. RG TJ = 150°C 1600 16 1400 14 12A 5 QRR (nC) IRR (A) 1200 12 10 10 47 1000 100 6.0A 800 8 600 3.0A 400 6 0 100 150 200 250 300 350 400 450 500 300 400 500 600 diF /dt (A/µs) Fig. 20 - Typ. Diode IRR vs. diF/dt VCC = 600V; VGE = 15V; IF = 6.0A; TJ = 150°C Fig. 21 - Typ. Diode QRR vs. diF/dt VCC = 600V; VGE = 15V; TJ = 150°C 40 RG = 10 300 160 35 30 RG = 100 25 200 100 140 Tsc 120 Isc 100 20 80 15 60 10 40 5 0 2 4 6 8 10 12 14 16 IF (A) Fig. 22 - Typ. Diode ERR vs. IF TJ = 150°C www.irf.com © 2013 International Rectifier Current (A) RG = 47 Time (µs) RG = 5 Energy (µJ) 200 diF /dt (A/µs) 400 6 100 20 8 10 12 14 16 18 V GE (V) Fig. 23 - VGE vs. Short Circuit Time VCC = 600V; TC = 150°C Submit Datasheet Feedback November 4, 2013 IRG7PH37K10DPbF/IRG7PH37K10D-EPbF   16 V GE, Gate-to-Emitter Voltage (V) 10000 Capacitance (pF) Cies 1000 100 Coes Cres 14 V CES = 600V 12 V CES = 400V 10 8 6 4 2 0 10 0 100 200 300 400 500 0 600 10 20 30 40 50 60 70 80 90 Q G, Total Gate Charge (nC) V CE (V) Fig. 25 - Typical Gate Charge vs. VGE ICE = 15A Fig. 24 - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz 1 Thermal Response ( Z thJC ) D = 0.50 0.20 0.1 0.10 0.05 J 0.02 0.01 0.01 R1 R1 J 1 R2 R2 R3 R3 C 2 1 3 2 C 3 Ci= iRi Ci= iRi Ri (°C/W) i (sec) 0.188011 0.000442 0.253666 0.003268 0.138770 0.018312 0.001 SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 1E-005 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 26 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) Thermal Response ( Z thJC ) 10 1 D = 0.50 0.20 0.10 0.05 0.1 0.02 0.01 J 0.01 R1 R1 J 1 R2 R2 R3 R3 R4 R4 C 2 1 2 3 4 3 4 Ci= iRi Ci= iRi 0.001 SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 1E-005 C Ri (°C/W) i (sec) 0.071695 0.000069 0.552034 0.000250 0.729153 0.003117 0.358475 0.020215 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 27 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) 7 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback November 4, 2013 IRG7PH37K10DPbF/IRG7PH37K10D-EPbF   L L VCC DUT 0 80 V + - DUT 1K VCC Rg Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit diode clamp / DUT L 4X DC VCC -5V DUT / DRIVER DUT VCC Rg RSH Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit C force R= VCC ICM 100K D1 22K C sense DUT VCC G force DUT 0.0075µF Rg E sense E force Fig.C.T.5 - Resistive Load Circuit 8 www.irf.com © 2013 International Rectifier Fig.C.T.6 - BVCES Filter Circuit Submit Datasheet Feedback November 4, 2013 IRG7PH37K10DPbF/IRG7PH37K10D-EPbF 35 700 600 30 600 500 25 500 20 400 400 90% ICE 300 15 10% VCE 200 10 10% ICE 100 0 Eoff Loss -100 -0.5 0 0.5 20 15 10 10% ICE 0 0 10% VCE 5 0 Eon Loss -100 -0.5 0 -5 0.5 time (µs) Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 150°C using Fig. CT.4 Fig. WF2 - Typ. Turn-on Loss Waveform @ TJ = 150°C using Fig. CT.4 140 700 10 QRR 5 0 Vce (V) -5 10% Peak IRR Peak IRR VCE 600 tRR IF (A) 25 90% ICE time(µs) -10 30 TEST CURRENT 200 100 -5 35 tr 300 5 1 40 120 500 100 400 80 ICE 300 60 200 40 100 20 Ice (A) VCE (V) 700 VCE (V) 800 tf ICE (A) 40 800 ICE (A)   -15 0 0 -20 -0.10 0.05 0.20 0.35 -20 -100 -20 -10 time (µs) Fig. WF3 - Typ. Diode Recovery Waveform @ TJ = 150°C using Fig. CT.4 9 www.irf.com © 2013 International Rectifier 0 10 time (µs) Fig. WF4 - Typ. S.C. Waveform @ TJ = 150°C using Fig. CT.3 Submit Datasheet Feedback November 4, 2013 IRG7PH37K10DPbF/IRG7PH37K10D-EPbF   TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information Notes: This part marking information applies to devices produced after 02/26/2001 EXAMPLE: THIS IS AN IRFPE30 WITH ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2001 IN THE ASSEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INTERNATIONAL RECTIFIER LOGO PART NUMBER IRFPE30 56 135H 57 ASSEMBLY LOT CODE DATE CODE YEAR 1 = 2001 WEEK 35 LINE H TO-247AC package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback November 4, 2013 IRG7PH37K10DPbF/IRG7PH37K10D-EPbF   TO-247AD Package Outline Dimensions are shown in millimeters (inches) TO-247AD Part Marking Information E X A M P L E : T H IS IS A N IR G P 3 0 B 1 2 0 K D - E W IT H A S S E M B L Y LO T C O D E 5657 ASSEM B LED O N W W 35, 2000 IN T H E A S S E M B L Y L IN E "H " N o te : "P " in a s s e m b ly lin e p o s itio n in d ic a te s "L e a d - F re e " PART N U M BER IN T E R N A T IO N A L R E C T IF IE R LO G O 56 035H 57 ASSEM B LY LO T C O D E D A TE C O D E YE A R 0 = 2 0 0 0 W EEK 35 L IN E H TO-247AD package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 11 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback November 4, 2013 IRG7PH37K10DPbF/IRG7PH37K10D-EPbF   Qualification Information† Industrial† Qualification Level Moisture Sensitivity Level TO-247AC (per JEDEC JESD47F) †† N/A TO-247AD N/A Yes RoHS Compliant † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ †† Applicable version of JEDEC standard at the time of product release. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 12 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback November 4, 2013