IRG7PH44K10DPbF
IRG7PH44K10D-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
VCES = 1200V
C
C
C
IC = 40A, TC =100°C
tSC 10µs, TJ(max) = 150°C
G
GC
VCE(ON) typ. = 1.9V @ IC = 25A
E
G
Gate
• Industrial Motor Drive
G
IRG7PH44K10DPbF
TO‐247AC
n-channel
Applications
E
C
Collector
CE
IRG7PH44K10D‐EPbF
TO‐247AD
E
Emitter
• UPS
Features
Benefits
Low VCE(ON) and switching losses
10µs Short Circuit SOA
Square RBSOA
Maximum Junction Temperature 150°C
Positive VCE (ON) Temperature Coefficient
Base part number
Package Type
IRG7PH44K10DPbF
IRG7PH44K10D-EPbF
TO-247AC
TO-247AD
High efficiency in a Wide Range of Applications
Rugged Transient Performance
Increased Reliability
Excellent Current Sharing in Parallel Operation
Standard Pack
Form
Quantity
Tube
25
Tube
25
Orderable Part Number
IRG7PH44K10DPbF
IRG7PH44K10D-EPbF
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, VGE=20V
Clamped Inductive Load Current, VGE=20V
Diode Continuous Forward Current
Diode Continuous Forward Current
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Max.
Units
1200
70
40
100
100
20
10
±30
320
120
-40 to +150
V
A
V
W
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
C
Thermal Resistance
RJC (IGBT)
RJC (Diode)
RCS
RJA
1
Parameter
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
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Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
40
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Max.
0.40
1.3
–––
–––
Units
°C/W
May 29, 2014
IRG7PH44K10DPbF/IRG7PH44K10D-EPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
V(BR)CES/TJ
Parameter
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Min.
1200
—
Typ.
—
0.80
—
1.9
—
2.4
Gate Threshold Voltage
5.0
—
VGE(th)
Threshold Voltage Temperature Coeff.
—
-15
VGE(th)/TJ
gfe
Forward Transconductance
—
16
—
1.0
ICES
Collector-to-Emitter Leakage Current
—
1200
Gate-to-Emitter Leakage Current
—
—
IGES
—
2.5
Diode Forward Voltage Drop
VF
—
2.4
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Max.
—
—
2.4
V
IC = 25A, VGE = 15V, TJ = 25°C
—
IC = 25A, VGE = 15V, TJ = 150°C
7.5
V
VCE = VGE, IC = 1.2mA
—
mV/°C VCE = VGE, IC = 1.2mA (25°C-150°C)
—
S
VCE = 50V, IC = 25A, PW = 20µs
35
µA VGE = 0V, VCE = 1200V
—
VGE = 0V, VCE = 1200V, TJ = 150°C
±100
nA VGE = ±30V
3.3
V
IF = 8.0A
—
IF = 8.0A, TJ = 150°C
VCE(on)
Collector-to-Emitter Saturation Voltage
Qg
Qge
Qgc
Eon
Eoff
Etotal
td(on)
tr
td(off)
tf
Eon
Parameter
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Eoff
Etotal
td(on)
tr
td(off)
tf
Cies
Coes
Cres
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RBSOA
Reverse Bias Safe Operating Area
SCSOA
Short Circuit Safe Operating Area
10
—
—
Erec
trr
Irr
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
—
—
—
190
130
13
—
—
—
Min.
—
—
—
—
—
—
—
—
—
—
—
Typ.
135
30
65
2.1
1.3
3.4
75
50
315
95
2.8
—
—
—
—
—
—
—
—
—
2.2
5.0
60
55
340
250
3050
145
80
Units
Conditions
V
VGE = 0V, IC = 250µA
V/°C VGE = 0V, IC = 2mA (25°C-150°C)
Max Units
Conditions
200
IC = 25A
45
nC VGE = 15V
VCC = 600V
100
3.0
2.2
mJ IC = 25A, VCC = 600V, VGE=15V
5.2
RG = 10, TJ = 25°C
95
Energy losses include tail & diode
70
ns reverse recovery
340
115
—
—
—
—
—
—
—
—
—
—
FULL SQUARE
mJ
ns
IC = 25A, VCC = 600V, VGE=15V
RG = 10, TJ = 150°C
Energy losses include tail & diode
reverse recovery
VGE = 0V
pF VCC = 30V
f = 1.0Mhz
TJ = 150°C, IC = 100A
VCC = 960V, Vp ≤ 1200V
VGE = +20V to 0V
TJ = 150°C,VCC = 600V, Vp ≤ 1200V
µs V = +15V to 0V
GE
µJ
ns
A
TJ = 150°C
VCC = 600V, IF = 8A
VGE = 15V, Rg = 10
Notes:
VCC = 80% (VCES), VGE = 20V.
R is measured at TJ of approximately 90°C.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Maximum limits are based on statistical sample size characterization.
Pulse width limited by max. junction temperature.
Values influenced by parasitic L and C in measurement.
2
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IRG7PH44K10DPbF/IRG7PH44K10D-EPbF
70
For both:
Duty cycle : 50%
Tj = 150°C
Tcase = 100°C
Gate drive as specified
Power Dissipation = 128.2W
Load Current ( A )
60
50
40
30
Square Wave:
VCC
20
I
10
Diode as specified
0
0.1
1
10
100
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
70
350
60
300
50
250
40
200
Ptot (W)
IC (A)
(Load Current = IRMS of fundamental)
30
150
20
100
10
50
0
0
25
50
75
100
125
150
25
50
75
TC (°C)
100
125
150
TC (°C)
Fig. 3 - Power Dissipation vs.
Case Temperature
Fig. 2 - Maximum DC Collector Current vs.
Case Temperature
1000
100
10µsec
100
IC (A)
100µsec
1
1msec
Tc = 25°C
Tj = 150°C
Single Pulse
10
DC
1
0.1
1
10
100
1000
10000
VCE (V)
Fig. 4 - Forward SOA
TC = 25°C; TJ ≤ 150°C; VGE = 15V
3
IC (A)
10
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10
100
1000
10000
V CE (V)
Fig. 5 - Reverse Bias SOA
TJ = 150°C; VGE = 20V
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May 29, 2014
IRG7PH44K10DPbF/IRG7PH44K10D-EPbF
100
100
V GE = 18V
V GE = 18V
V GE = 15V
80
V GE = 12V
ICE (A)
ICE (A)
V GE = 8.0V
60
V GE = 8.0V
40
40
20
20
0
0
0
2
4
6
8
0
10
2
4
6
8
10
V CE (V)
V CE (V)
Fig. 6 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 20µs
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 20µs
100
160
V GE = 18V
140
V GE = 15V
80
V GE = 12V
120
V GE = 10V
60
TJ =150°C
TJ = 25°C
100
V GE = 8.0V
IF (A)
ICE (A)
V GE = 12V
V GE = 10V
V GE = 10V
60
V GE = 15V
80
40
TJ = -40°C
80
60
40
20
20
0
0
0
2
4
6
8
10
0.0
2.0
4.0
V CE (V)
10.0
12
12
10
10
ICE = 13A
ICE = 25A
8
ICE = 13A
ICE = 25A
8
ICE = 50A
V CE (V)
V CE (V)
8.0
Fig. 9 - Typ. Diode Forward Voltage Drop
Characteristics
Fig. 8 - Typ. IGBT Output Characteristics
TJ = 150°C; tp = 20µs
6
ICE = 50A
6
4
4
2
2
0
0
5
10
15
20
V GE (V)
Fig. 10 - Typical VCE vs. VGE
TJ = -40°C
4
6.0
V F (V)
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5
10
15
20
V GE (V)
Fig. 11 - Typical VCE vs. VGE
TJ = 25°C
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IRG7PH44K10DPbF/IRG7PH44K10D-EPbF
12
100
10
ICE = 13A
ICE = 25A
ICE = 50A
ICE (A)
V CE (V)
8
75
6
50
4
TJ = 25°C
TJ = 150°C
25
2
0
0
5
10
15
20
4
6
8
10
12
14
V GE (V)
V GE (V)
Fig. 12 - Typical VCE vs. VGE
TJ = 150°C
Fig. 13 - Typ. Transfer Characteristics
VCE = 50V; tp = 20µs
1000
8000
7000
tdOFF
Swiching Time (ns)
Energy (µJ)
6000
5000
EON
4000
3000
2000
tF
100
tdON
EOFF
tR
1000
10
0
0
10
20
30
40
0
50
10
20
30
Fig. 14 - Typ. Energy Loss vs. IC
TJ = 150°C; L = 0.62mH; VCE = 600V, RG = 10; VGE = 15V
7000
50
Fig. 15 - Typ. Switching Time vs. IC
TJ = 150°C; L = 0.62mH; VCE = 600V, RG = 10; VGE = 15V
10000
6000
tdOFF
5000
Swiching Time (ns)
Energy (µJ)
40
IC (A)
IC (A)
EON
4000
1000
tF
tdON
100
tR
EOFF
3000
2000
10
0
20
40
60
80
100
0
20
40
60
80
100
Rg ()
RG ( )
Fig. 16 - Typ. Energy Loss vs. RG
TJ = 150°C; L = 0.62mH; VCE = 600V, ICE = 25A; VGE = 15V
Fig. 17 - Typ. Switching Time vs. RG
TJ = 150°C; L = 0.62mH; VCE = 600V, ICE = 25A; VGE = 15V
5
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IRG7PH44K10DPbF/IRG7PH44K10D-EPbF
18
14
RG =
12
14
10
IRR (A)
IRR (A)
RG = 10
10
8
RG = 47
6
RG = 100
4
6
2
2
4
6
8
10
12
14
16
0
20
40
60
80
100
120
IF (A)
RG ( )
Fig. 18 - Typ. Diode IRR vs. IF
TJ = 150°C
Fig. 19 - Typ. Diode IRR vs. RG
TJ = 150°C
15
1800
1600
13
1400
QRR (nC)
IRR (A)
11
9
16A
1200
1000
8A
800
600
7
4A
400
200
5
0
100
200
300
400
0
500
100
200
300
400
500
diF /dt (A/µs)
diF /dt (A/µs)
Fig. 20 - Typ. Diode IRR vs. diF/dt
VCC = 600V; VGE = 15V; IF = 8.0A; TJ = 150°C
Fig. 21 - Typ. Diode QRR vs. diF/dt
VCC = 600V; VGE = 15V; TJ = 150°C
40
350
160
RG =
300
120
20
80
Time (µs)
RG = 47
RG = 100
100
30
Current (A)
200
150
Isc
Tsc
RG =10
250
Energy (µJ)
50
10
0
2
4
6
8
10
12
14
16
18
IF (A)
Fig. 22 - Typ. Diode ERR vs. IF
TJ = 150°C
6
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40
8
10
12
14
16
18
V GE (V)
Fig. 23 - VGE vs. Short Circuit Time
VCC = 600V; TC = 150°C
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IRG7PH44K10DPbF/IRG7PH44K10D-EPbF
16
V GE, Gate-to-Emitter Voltage (V)
10000
Capacitance (pF)
Cies
1000
100
Coes
Cres
14
V CES = 600V
12
V CES = 400V
10
8
6
4
2
0
10
0
100
200
300
400
500
0
600
20
40
60
80
100
120
140
Q G, Total Gate Charge (nC)
V CE (V)
Fig. 25 - Typical Gate Charge vs. VGE
ICE = 25A
Fig. 24 - Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
1
Thermal Response ( Z thJC )
D = 0.50
0.1
0.20
0.10
0.05
0.01
J
0.02
0.01
R1
R1
J
1
R2
R2
R3
R3
R4
R4
C
2
1
3
2
4
3
C
4
Ci= iRi
Ci= iRi
0.001
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
1E-006
1E-005
Ri (°C/W)
i (sec)
0.010602
0.000026
0.112078
0.000155
0.169631
0.003607
0.098447
0.018763
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 26 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
Thermal Response ( Z thJC )
10
1
D = 0.50
0.20
0.10
0.1
0.05
J
0.02
0.01
R1
R1
J
1
R2
R2
R3
R3
R4
R4
C
2
1
2
3
4
3
Ci= iRi
Ci= iRi
0.01
1E-005
0.0001
0.001
C
i (sec)
0.016084
0.000015
0.462040
0.000462
0.554156
0.003501
0.266112
0.021934
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
4
Ri (°C/W)
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 27 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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IRG7PH44K10DPbF/IRG7PH44K10D-EPbF
L
L
VCC
DUT
0
80 V +
-
DUT
1K
VCC
Rg
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
diode clamp /
DUT
L
4X
DC
VCC
-5V
DUT /
DRIVER
DUT
VCC
Rg
RSH
Fig.C.T.3 - S.C. SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
C force
R=
VCC
ICM
100K
D1
22K
C sense
DUT
VCC
G force
DUT
0.0075µF
Rg
E sense
E force
Fig.C.T.5 - Resistive Load Circuit
8
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Fig.C.T.6 - BVCES Filter Circuit
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IRG7PH44K10DPbF/IRG7PH44K10D-EPbF
1000
50
1000
50
40
800
600
30
600
90% ICE
400
20
VCE (V)
800
ICE (A)
VCE (V)
tf
10% VCE
200
0
40
30
400
20
90% ICE
10
200
10
10% ICE
TEST
CURRENT
tr
10% ICE
10% VCE
0
0
0
ICE (A)
Eon Loss
Eoff Loss
-200
-0.5
0
-10
0.5
-10
-200
-0.5
1
0
0.5
1
time (µs)
time(µs)
Fig. WF1 - Typ. Turn-off Loss Waveform
@ TJ = 150°C using Fig. CT.4
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 150°C using Fig. CT.4
800
800
45
200200
QRR
VCE
VCE
600
600
30
150
150
tRR
400
0
-15
ICE
200
50
ICE
200
50
0
Peak
IRR
0
0
0
-200
-50
-20
-30
-0.20 0.00
0.40
0.60
0.80
time (µs)
Fig. WF3 - Typ. Diode Recovery Waveform
@ TJ = 150°C using Fig. CT.4
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-10
0
10
time (µs)
-200
0.20
Ice (A)
100
Ice (A)
IF (A)
VceVce
(V) (V)
15
100
400
-20
-10
-50
0
10
time (µs)
Fig. WF4 - Typ. S.C. Waveform
@ TJ = 150°C using Fig. CT.3
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IRG7PH44K10DPbF/IRG7PH44K10D-EPbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
Notes: This part marking information applies to devices produced after 02/26/2001
EXAMPLE: THIS IS AN IRFPE30
WITH ASSEMBLY
LOT CODE 5657
ASSEMBLED ON WW 35, 2001
IN THE ASSEMBLY LINE "H"
Note: "P" in assembly line position
indicates "Lead-Free"
INTERNATIONAL
RECTIFIER
LOGO
PART NUMBER
IRFPE30
56
135H
57
ASSEMBLY
LOT CODE
DATE CODE
YEAR 1 = 2001
WEEK 35
LINE H
TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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IRG7PH44K10DPbF/IRG7PH44K10D-EPbF
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
TO-247AD Part Marking Information
E X A M P L E : T H IS IS A N IR G P 3 0 B 1 2 0 K D - E
W IT H A S S E M B L Y
LO T C O D E 5657
ASSEM B LED O N W W 35, 2000
IN T H E A S S E M B L Y L IN E "H "
N o te : "P " in a s s e m b ly lin e p o s itio n
in d ic a te s "L e a d - F re e "
PART N U M BER
IN T E R N A T IO N A L
R E C T IF IE R
LO G O
56
035H
57
ASSEM B LY
LO T C O D E
D A TE C O D E
YE A R 0 = 2 0 0 0
W EEK 35
L IN E H
TO-247AD package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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IRG7PH44K10DPbF/IRG7PH44K10D-EPbF
Qualification Information†
Industrial†
Qualification Level
TO-247AC
Moisture Sensitivity Level
(per JEDEC JESD47F) ††
N/A
TO-247AD
N/A
Yes
RoHS Compliant
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
††
Applicable version of JEDEC standard at the time of product release.
Revision History
Date
5/29/14
Comments
Corrected pin assignment from “G” to “C” on page1
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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