IRG7PK35UD1PBF

IRG7PK35UD1PbF IRG7PK35UD1-EPbF   Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode   VCES = 1400V C C C   IC = 20A, TC =100°C TJ(max) = 150°C G G VCE(ON) typ. = 2.0V @ IC = 20A E n-channel Applications  Induction heating  Microwave ovens  Soft switching applications C E G IRG7PK35UD1PbF  TO‐247AC  G Gate IRG7PK35UD1‐EPbF  TO‐247AD  C Collector Features E C E Emitter Benefits Low VCE(ON), ultra-low VF, and turn-off soft switching losses High efficiency in a wide range of soft switching applications and switching frequencies Positive VCE (ON) temperature coefficient and tight distribution of parameters Excellent current sharing in parallel operation Lead-free, RoHS compliant Environmentally friendly Base part number Package Type IRG7PK35UD1PbF IRG7PK35UD1-EPbF TO-247AC TO-247AD Standard Pack Form Quantity Tube 25 Tube 25 Orderable Part Number IRG7PK35UD1PbF IRG7PK35UD1-EPbF Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE = 15V  Clamped Inductive Load Current, VGE = 20V  Diode Continuous Forward Current Diode Continuous Forward Current Continuous Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw Max. Units 1400 40 20 200 80 40 20 ±30 167 67 -40 to +150 V A  V W 300 (0.063 in. (1.6mm) from case) 10 lbf·in (1.1 N·m) C Thermal Resistance RJC (IGBT) RJC (Diode) RCS RJA 1 Parameter Thermal Resistance Junction-to-Case (IGBT)  Thermal Resistance Junction-to-Case (Diode)  Thermal Resistance, Case-to-Sink (flat, greased surface) Thermal Resistance, Junction-to-Ambient (typical socket mount) www.irf.com © 2014 International Rectifier Min. ––– ––– ––– ––– Submit Datasheet Feedback Typ. ––– ––– 0.24 40 Max. 0.75 1.4 ––– ––– Units °C/W February 27, 2014 IRG7PK35UD1PbF/IRG7PK35UD1-EPbF   Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. — 2.0 Collector-to-Emitter Saturation Voltage VCE(on) — 2.4 VGE(th) Gate Threshold Voltage 3.0 — gfe Forward Transconductance — 21 — 1.0 ICES Collector-to-Emitter Leakage Current — 150 — — IGES Gate-to-Emitter Leakage Current — 1.30 Diode Forward Voltage Drop   VF   — 1.25 Max. Units 2.35 V —   6.0 V — S 100 µA — ±100 nA 1.43 V — Conditions IC = 20A, VGE = 15V, TJ = 25°C IC = 20A, VGE = 15V, TJ = 150°C VCE = VGE, IC = 600µA VCE = 50V, IC = 20A, PW = 20µs VGE = 0V, VCE = 1400V VGE = 0V, VCE = 1400V, TJ = 150°C VGE = ±30V IF = 20A IF = 20A, TJ = 150°C Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc Parameter Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Min. — — — Eoff Turn-Off Switching Loss — td(off) tf Turn-Off delay time Fall time — — Eoff Turn-Off Switching Loss — td(off) tf Cies Coes Cres Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — — — RBSOA Reverse Bias Safe Operating Area Typ. 65 15 25 Max Units Conditions 98 IC = 20A 23 nC VGE = 15V VCC = 600V 38 IC = 20A, VCC = 600V, VGE = 15V 0.65 0.90 mJ   RG = 10, TJ = 25°C 150 170 Energy losses include tail   ns   75 95 IC = 20A, VCC = 600V, VGE = 15V 1.3 — mJ RG = 10, TJ = 150°C   180 — Energy losses include tail   ns   180 —   2200 — VGE = 0V pF VCC = 30V 70 — f = 1.0MHz 35 — TJ = 150°C, IC = 80A FULL SQUARE VCC = 1120V, Vp ≤ 1400V RG = 10, VGE = +20V to 0V   Notes:       FBSOA operating conditions only. Pulse width limited by max. junction temperature. VCC = 80% (VCES), VGE = 20V, RG = 10. R is measured at TJ of approximately 90°C. Refer to AN-1086 for guidelines for measuring V(BR)CES safely. Maximum limits are based on statistical sample size characterization. 2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback February 27, 2014 IRG7PK35UD1PbF/IRG7PK35UD1-EPbF 40 200 30 150 Ptot (W) IC (A)   20 100 10 50 0 0 25 50 75 100 125 150 25 50 75 100 125 150 TC (°C) TC (°C) Fig. 1 - Maximum DC Collector Current vs. Case Temperature Fig. 2 - Power Dissipation vs. Case Temperature 1000 5.0 4.6 100 4.2 IC (A) VGE(th) , Gate Threshold Voltage IC = 600µA 3.8 10 3.4 1 3.0 25 50 75 100 125 10 150 10000 Fig. 4 - Reverse Bias SOA TJ = 150°C; VGE = 20V Fig. 3 - Typical Gate Threshold Voltage vs. Junction Temperature 80 80 V GE = 18V V GE = 15V V GE = 12V V GE = 10V V GE = 8.0V V GE = 18V V GE = 15V V GE = 12V V GE = 10V V GE = 8.0V 60 ICE (A) 60 ICE (A) 1000 V CE (V) T J , Temperature (°C) 40 20 40 20 0 0 0 3 100 2 4 6 8 10 0 2 4 6 8 10 V CE (V) V CE (V) Fig. 5 - Typ. IGBT Output Characteristics TJ = -40°C; tp = 20µs Fig. 6 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 20µs www.irf.com © 2014 International Rectifier Submit Datasheet Feedback February 27, 2014 IRG7PK35UD1PbF/IRG7PK35UD1-EPbF   80 80 25°C 150°C 60 50 IF (A) 60 ICE (A) 70 V GE = 18V V GE = 15V V GE = 12V V GE = 10V V GE = 8.0V 40 40 30 20 20 10 0 0 0 2 4 6 8 10 0.0 1.0 2.0 V CE (V) Fig. 8 - Typ. Diode Forward Voltage Drop Characteristics Fig. 7 - Typ. IGBT Output Characteristics TJ = 150°C; tp = 20µs 12 12 10 10 8 ICE = 40A ICE = 20A 6 ICE = 10A ICE = 40A ICE = 20A 8 V CE (V) V CE (V) 3.0 VF (V) ICE = 10A 6 4 4 2 2 0 0 5 10 15 5 20 10 15 20 V GE (V) V GE (V) Fig. 9 - Typical VCE vs. VGE TJ = -40°C Fig. 10 - Typical VCE vs. VGE TJ = 25°C 12 80 10 ICE = 40A ICE = 20A 6 ICE = 10A ICE (A) V CE (V) 60 8 40 4 TJ = 25°C TJ = 150°C 20 2 0 0 5 4 10 15 20 2 4 6 8 10 12 V GE (V) V GE (V) Fig. 11 - Typical VCE vs. VGE TJ = 150°C Fig. 12 - Typ. Transfer Characteristics VCE = 50V; tp = 20µs www.irf.com © 2014 International Rectifier Submit Datasheet Feedback February 27, 2014 IRG7PK35UD1PbF/IRG7PK35UD1-EPbF   1000 2.5 tdOFF Swiching Time (ns) Energy (mJ) 2.0 EOFF 1.5 1.0 tF 100 0.5 0.0 10 0 10 20 30 40 0 10 20 IC (A) 30 40 IC (A) Fig. 13 - Typ. Energy Loss vs. IC TJ = 150°C; VCE = 600V, RG = 10; VGE = 15V Fig. 14 - Typ. Switching Time vs. IC TJ = 150°C; VCE = 600V, RG = 10; VGE = 15V 10000 2.6 Swiching Time (ns) 2.2 Energy (mJ) EOFF 1.8 1000 tdOFF 100 tF 1.4 10 1.0 0 20 40 60 80 0 100 60 80 100 RG (  ) Fig. 15 - Typ. Energy Loss vs. RG TJ = 150°C; VCE = 600V, ICE = 20A; VGE = 15V Fig. 16 - Typ. Switching Time vs. RG TJ = 150°C; VCE = 600V, ICE = 20A; VGE = 15V 16 V GE, Gate-to-Emitter Voltage (V) Cies 1000 Capacitance (pF) 40 Rg ( ) 10000 100 Coes 10 Cres V CES = 600V 14 V CES = 400V 12 10 8 6 4 2 0 1 0 100 200 300 400 500 600 V CE (V) Fig. 17 - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz 5 20 www.irf.com © 2014 International Rectifier 0 10 20 30 40 50 60 70 Q G, Total Gate Charge (nC) Fig. 18 - Typical Gate Charge vs. VGE ICE = 20A Submit Datasheet Feedback February 27, 2014 IRG7PK35UD1PbF/IRG7PK35UD1-EPbF   1 Thermal Response ( Z thJC ) D = 0.50 0.20 0.1 0.10 0.05 J R1 R1 J 1 0.02 2 1 R3 R3 3 2 3 R4 R4 4 R5 R5 5 4 C C 5 Ci= iRi Ci= iRi 0.01 0.01 R2 R2 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 Ri (°C/W) i (sec) 0.009435 0.00000971 0.134412 0.00005224 0.182875 0.00033830 0.286292 0.00397000 0.136974 0.02151000 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 19 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) Thermal Response ( Z thJC ) 10 1 D = 0.50 0.20 0.10 0.1 0.05 J 0.02 0.01 R1 R1 J 1 R2 R2 R3 R3 R4 R4 C 2 1 2 3 4 3 4 Ci= iRi Ci= iRi 0.01 1E-005 0.0001 i (sec) 0.017209 0.000012 0.520952 0.000591 0.550676 0.004389 0.309755 0.032009 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 C Ri (°C/W) 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 20 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) 6 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback February 27, 2014 IRG7PK35UD1PbF/IRG7PK35UD1-EPbF   L 80 V + - DUT VCC Rg Fig.C.T.2 - RBSOA Circuit Fig.C.T.1 - Gate Charge Circuit (turn-off) diode clamp / DUT C force L 100K D1 -5V 22K C sense DUT / DRIVER VCC DUT G force 0.0075µF Rg E sense E force Fig.C.T.4 - BVCES Filter Circuit Fig.C.T.3 - Switching Loss Circuit 800 80 tf 70 600 60 500 50 400 40 300 30 ICE (A) VCE (V) 700 90% ICE 200 20 100 0 10 10% ICE 5% VCE 0 Eoff Loss -100 -1.4 -0.4 0.6 1.6 -10 2.6 time(µs) Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 150°C using Fig. CT.3 7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback February 27, 2014 IRG7PK35UD1PbF/IRG7PK35UD1-EPbF   TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information Notes: This part marking information applies to devices produced after 02/26/2001 EXAMPLE: THIS IS AN IRFPE30 WITH ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2001 IN THE ASSEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INTERNATIONAL RECTIFIER LOGO PART NUMBER IRFPE30 56 135H 57 ASSEMBLY LOT CODE DATE CODE YEAR 1 = 2001 WEEK 35 LINE H TO-247AC package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback February 27, 2014 IRG7PK35UD1PbF/IRG7PK35UD1-EPbF   TO-247AD Package Outline Dimensions are shown in millimeters (inches) TO-247AD Part Marking Information E X A M P L E : T H IS IS A N IR G P 3 0 B 1 2 0 K D - E W IT H A S S E M B L Y LO T C O D E 5657 ASSEM B LED O N W W 35, 2000 IN T H E A S S E M B L Y L IN E "H " N o te : "P " in a s s e m b ly lin e p o s itio n in d ic a te s "L e a d - F re e " PART N U M BER IN T E R N A T IO N A L R E C T IF IE R LO G O 56 035H 57 ASSEM B LY LO T C O D E D A TE C O D E YE A R 0 = 2 0 0 0 W EEK 35 L IN E H TO-247AD package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback February 27, 2014 IRG7PK35UD1PbF/IRG7PK35UD1-EPbF   Qualification Information† Consumer†† (per JEDEC JESD47F)††† Qualification Level Moisture Sensitivity Level TO-247AC N/A TO-247AD N/A Yes RoHS Compliant † †† ††† Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 10 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback February 27, 2014