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IRG7T100HF12A

IRG7T100HF12A

  • 厂商:

    EUPEC(英飞凌)

  • 封装:

    POWIR®34

  • 描述:

    MOD IGBT 1200V 100A POWIR 34

  • 数据手册
  • 价格&库存
IRG7T100HF12A 数据手册
IRG5K50P5K50PM06E IRG7T100HF12A IGBT Half-Bridge POWIR 34™ Package VCES = 1200V IC = 100A at TC = 80⁰C tSC ≥ 10µsec VCE(ON) = 1.90V at IC = 100A Applications:  Industrial Motor Drive Uninterruptible Power Supply Welding and Cutting Machine Switched Mode Power Supply Induction Heating AC Inverter Drive      Features Benefits Low VCE(ON) and Switching Losses High Efficiency in a Wide Range of Applications 100% RBSOA Tested 10µsec Short Circuit Safe Operating Area Rugged Transient Performance POWIR 34™ Package Industry Standard Lead Free RoHS Compliant, Environmental Friendly Base Part Number Package Type Standard Pack Quantity Orderable Part Number IRG7T100HF12A POWIR 34™ Box 80 IRG7T100HF12A Absolute Maximum Ratings of IGBT VCES Collector to Emitter Voltage 1200 V VGES Continuous Gate to Emitter Voltage ±20 V IC Continuous Collector Current TC = 80°C 100 A TC = 25°C 200 A ICM Pulse Collector Current TJ = 175°C 200 A PD Maximum Power Dissipation (IGBT) TC = 25°C, TJ = 175°C 575 W TJ Maximum IGBT Junction Temperature 175 °C TJOP Maximum Operating Junction Temperature Range -40 to +150 °C Tstg Storage Temperature -40 to +125 °C 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 1, 2014 IRG5K50P5K50PM06E IRG7T100HF12A Electrical Characteristics of IGBT at TJ = 25°C (Unless Otherwise Specified) Parameter Min. V(BR)CES Collector to Emitter Breakdown Voltage VGE(th) Gate Threshold Voltage VCE(ON) Collector to Emitter Saturation Voltage ICES Collector to Emitter Leakage Current IGES Gate to Emitter Leakage Current RGint Internal Gate Resistance Typ. Max. 1200 5.0 Unit Test Conditions V VGE = 0V, IC = 1mA 5.8 6.5 V IC = 5mA, VCE = VGE 1.90 2.20 V TJ = 25°C V TJ = 125°C 2.20 IC = 100A, VGE = 15V 1 mA VGE = 0V, VCE = VCES 400 nA VGE = ±20V, VCE = 0 2.5 Ω Switching Characteristics of IGBT Parameter Min. Typ. 245 td(on) Turn-on Delay Time tr Rise Time td(off) Turn-off Delay Time tf Fall Time Eon Turn-on Switching Loss Eoff Turn-off Switching Loss Qg Total Gate Charge 945 Cies Input Capacitance 13.7 Coes Output Capacitance 0.78 Cres Reverse Transfer Capacitance 0.47 RBSOA Reverse Bias Safe Operating Area SCSOA Short Circuit Safe Operating Area 2 225 145 145 420 450 170 230 9.1 11.7 5.5 7.9 Max. Unit ns ns ns ns mJ mJ nC nF www.irf.com © 2014 International Rectifier TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C VCC=600V, IC = 100A, RG = 15Ω, VGE=±15V, Inductive Load TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C VCE = 25V, VGE = 0V, f =1MHz, TJ = 25°C IC = 200A,VCC = 960V, VP = 1200V, RG = 15Ω, VGE = +15V to 0V, TJ = 150°C Trapezoid 10 Test Conditions μs VCC = 600V, VGE = 15V, TJ = 150°C Submit Datasheet Feedback October 1, 2014 IRG5K50P5K50PM06E IRG7T100HF12A Absolute Maximum Ratings of Freewheeling Diode VRRM IF IFM Repetitive Peak Reverse Voltage 1200 Diode Continuous Forward Current, TC = 25°C 200 Diode Continuous Forward Current, TC = 80°C 100 Pulse Diode Current 200 V A A Electrical and Switching Characteristics of Freewheeling Diode Parameter VF Forward Voltage Irr Peak Reverse Recovery Current Qrr Reverse Recovery Charge Erec Reverse Recovery Energy Typ. Max. 2.20 2.70 2.40 40 Unit V A 55 4.7 µC 10.6 1.5 mJ 3.9 Test Conditions TJ = 25°C TJ = 125°C IF = 100A , VGE = 0V TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C IF=100A, di/dt=660A/μs, Vrr = 600V, VGE = -15V TJ = 125°C Module Characteristics Parameter Min. Typ. Max. Unit 2500 V Viso Isolation Voltage (All Terminals Shorted), f = 50Hz, 1minute RθJC Junction-to-Case (IGBT) 0.26 °C/W RθJC Junction-to-Case (Diode) 0.41 °C/W RθCS Case-To-Sink (Conductive Grease Applied) 0.1 °C/W M Power Terminals Screw: M5 3.0 5.0 N·m M Mounting Screw: M6 4.0 6.0 N·m G Weight 3 www.irf.com © 2014 International Rectifier 165 Submit Datasheet Feedback g October 1, 2014 IRG5K50P5K50PM06E IRG7T100HF12A 200 200 VGE =15V TJ =125°C 180 160 180 TJ =25°C 140 VGE =17V VGE =15V 140 VGE =13V VGE =11V 120 IC (A) 120 IC (A) TJ =125°C 160 100 100 80 60 60 40 40 20 20 0 0.0 0.4 0.8 1.2 1.6 2.0 VCE (V) 2.4 2.8 VGE =9V 80 0 0.0 3.2 Fig.1 Typical IGBT Saturation Characteristics 0.6 1.2 1.8 2.4 VCE (V) 3.0 3.6 4.2 4.8 Fig.2 Typical IGBT Output Characteristics 200 30 VGE =0V TJ =125°C 180 160 VCE= 0 V,f=1MHz Cies 25 Coes TJ =25°C 140 20 C (nF) IF (A) 120 100 15 80 10 60 40 5 20 0 0.0 0.4 0.8 1.2 1.6 2.0 VF (V) 2.4 2.8 3.2 0 3.6 Fig.3 Typical Diode Forward Characteristics VCE (V) 15 20 25 15 VCC =600V,VGE =+/-15V, IC =100A,TJ =125°C 27 24 Eoff Eon 18 Erec E (mJ) E (mJ) 10 30 VCC =600V,VGE =+/-15V, Rg =15 ohm,TJ =125°C 21 12 21 Eoff Eon 18 Erec 15 12 9 9 6 6 3 3 0 20 40 60 80 100 120 IC (A) 140 160 180 200 Fig.5 Typical Switching Loss vs. Collector Current 4 5 Fig. 4 Typical Capacitance Characteristics 24 0 0 www.irf.com © 2014 International Rectifier 0 0 5 10 15 20 25 30 Rg () 35 40 45 50 Fig.6 Typical Switching Loss vs. Gate Resistance Submit Datasheet Feedback October 1, 2014 IRG5K50P5K50PM06E IRG7T100HF12A 140 Duty Cycle:50% TJ =125°C 120 TC =80°C 100 Rg=15 ohm,VGE =15V 150 80 IC (A) Load Current (A) 200 Square Wave: Vcc 60 100 I 40 50 20 0 Module Chip Diode as specified 1 10 Frequency (KHz) 0 100 Fig.7 Typical Load Current vs. Frequency 200 400 600 800 VCES (V) 1000 1200 Fig.8 Reverse Bias Safe Operation Area (RBSOA) 0.5 0.30 0.25 0 ZthJC:Diode ZthJC:IGBT 0.4 ZthJC (K/W) ZthJC (K/W) 0.20 0.15 0.10 0.2 0.1 0.05 0.00 0.001 0.3 0.01 t (s) 0.1 1 2 0.0 0.001 0.01 t (s) 0.1 1 2 Fig.9 Typical Transient Thermal Impedance (IGBT) Fig.10 Typical Transient Thermal Impedance (Diode) 5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 1, 2014 IRG5K50P5K50PM06E IRG7T100HF12A Internal Circuit: Package Outline (Unit: mm): Qualification Information† Qualification Level Industrial Moisture Sensitivity Level Yes RoHS Compliant † Not Applicable Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ IR WORLD HEADQUARTERS: 101 North Sepulveda Blvd, El Segundo, California, 90245, USA To contact International Rectifier, please visit: http://www.irf.com/whoto-call/ 6 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 1, 2014
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