IRG5K50P5K50PM06E
IRG7T100HF12B
IGBT Half-Bridge
POWIR 62™ Package
VCES = 1200V
IC = 100A at TC = 80°C
tSC ≥ 10µsec
VCE(ON) = 1.90V at IC = 100A
Applications:
Industrial Motor Drive
Uninterruptible Power Supply
Welding and Cutting Machine
Switched Mode Power Supply
Induction Heating
Features
Benefits
Low VCE(ON) and Switching Losses
High Efficiency in a Wide Range of Applications
RBSOA Tested
10µsec Short Circuit Safe Operating Area
Rugged Transient Performance
POWIR 62™ Package
Industry Standard
Lead Free
RoHS Compliant, Environmental Friendly
Base Part Number
Package Type
Standard Pack
Quantity
Orderable Part Number
IRG7T100HF12B
POWIR 62™
Box
45
IRG7T100HF12B
Absolute Maximum Ratings of IGBT
VCES
Collector to Emitter Voltage
1200
V
VGES
Continuous Gate to Emitter Voltage
±20
V
IC
Continuous Collector Current
TC = 80°C
100
A
TC = 25°C
200
A
ICM
Pulse Collector Current
TJ = 175°C
200
A
PD
Maximum Power Dissipation (IGBT)
TC = 25°C, TJ = 175°C
680
W
TJ
Maximum IGBT Junction Temperature
175
°C
TJOP
Maximum Operating Junction Temperature Range
-40 to +150
°C
Tstg
Storage Temperature
-40 to +125
°C
1
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IRG5K50P5K50PM06E
IRG7T100HF12B
Electrical Characteristics of IGBT at TJ = 25°C (Unless Otherwise Specified)
Parameter
Min.
V(BR)CES
Collector to Emitter Breakdown
Voltage
VGE(th)
Gate Threshold Voltage
VCE(ON)
Collector to Emitter Saturation Voltage
ICES
Collector to Emitter Leakage Current
IGES
Gate to Emitter Leakage Current
RGint
Internal Gate Resistance
Typ.
Max.
1200
5.0
Unit
Test Conditions
V
VGE = 0V, IC = 2mA
5.8
6.5
V
IC = 4.8mA, VCE = VGE
1.90
2.20
V
TJ = 25°C
V
TJ = 125°C
2.20
IC = 100A,
VGE = 15V
2
mA
VGE = 0V, VCE = VCES
400
nA
VGE = ±20V, VCE = 0
3.40
Ω
Switching Characteristics of IGBT
Parameter
Min.
Typ.
255
td(on)
Turn-on Delay Time
tr
Rise Time
td(off)
Turn-off Delay Time
tf
Fall Time
Eon
Turn-on Switching Loss
Eoff
Turn-off Switching Loss
Qg
Total Gate Charge
850
Cies
Input Capacitance
13.0
Coes
Output Capacitance
0.76
Cres
Reverse Transfer Capacitance
0.45
RBSOA
Reverse Bias Safe Operating Area
SCSOA
Short Circuit Safe Operating Area
2
235
140
140
435
450
170
190
10.1
13.2
4.90
7.30
Max.
Unit
ns
ns
ns
ns
mJ
mJ
nC
nF
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TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
VCC=600V,
IC = 100A,
RG = 15Ω,
VGE=±15V,
Inductive
Load
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
VCE = 25V, VGE = 0V,
f =1MHz, TJ = 25°C
IC = 200A,VCC = 960V,
VP =1200V, RG = 15Ω,
VGE = +15V to 0V,
TJ = 150°C
Trapezoid
10
Test Conditions
μs
VCC = 600V, VGE = 15V,
TJ = 150°C
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IRG5K50P5K50PM06E
IRG7T100HF12B
Absolute Maximum Ratings of Freewheeling Diode
VRRM
IF
IFM
Repetitive Peak Reverse Voltage
1200
Diode Continuous Forward Current, TC = 25°C
200
Diode Continuous Forward Current, TC = 80°C
100
Pulse Diode Current
200
V
A
A
Electrical and Switching Characteristics of Freewheeling Diode
Parameter
VF
Forward Voltage
Irr
Peak Reverse Recovery Current
Qrr
Reverse Recovery Charge
Erec
Reverse Recovery Energy
Typ.
Max.
2.00
2.70
2.20
45
50
4.9
6.0
1.7
3.6
Unit
V
A
µC
mJ
Test Conditions
TJ = 25°C
TJ = 125°C
IF = 100A ,
VGE = 0V
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
IF=100A,
di/dt=840A/μs,
Vrr = 600V,
VGE = -15V
TJ = 125°C
Module Characteristics
Parameter
Min.
Typ.
Max.
Unit
2500
V
Viso
Isolation Voltage
(All Terminals Shorted),
f = 50Hz, 1minute
RθJC
Junction-to-Case (IGBT)
0.220
°C/W
RθJC
Junction-to-Case (Diode)
0.409
°C/W
RθCS
Case-To-Sink
(Conductive Grease Applied)
0.1
°C/W
M
Power Terminals Screw: M6
3.0
5.0
N·m
M
Mounting Screw: M6
4.0
6.0
N·m
G
Weight
3
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IRG5K50P5K50PM06E
IRG7T100HF12B
200
200
180
180
VGE =15V
TJ =125°C
160
TJ =25°C
140
VGE =17V
VGE =15V
140
VGE =13V
VGE =11V
120
IC (A)
120
IC (A)
TJ =125°C
160
100
100
80
60
60
40
40
20
20
0
0.0
0.4
0.8
1.2
1.6
2.0
VCE (V)
2.4
2.8
3.2
VGE =9V
80
0
0.0
3.6
0.4
0.8
1.2
1.6
2.0 2.4
VCE (V)
2.8
3.2
3.6
4.0
Fig.1 Typical IGBT Saturation Characteristics
Fig.2 Typical IGBT Output Characteristics
200
25
180
VGE =0V
TJ =125°C
160
20
Coes
15
C (nF)
120
IF (A)
VGE =0V,f =1MHz
Cies
TJ =25°C
140
4.4
100
80
10
60
40
5
20
0
0.0
0.4
0.8
1.2
1.6
2.0
VF (V)
2.4
2.8
3.2
0
3.6
Fig.3 Typical Freewheeling Diode Characteristics
VCE (V)
15
20
25
18
Eoff
Eon
15
Erec
VCC =600V,VGE =+/-15V,
IC =100A,TJ =125°C
30
27
Eoff
Eon
24
21
E (mJ)
21
E (mJ)
10
33
VCC =600V,VGE =+/-15V,
Rg =15 ohm,TJ =125°C
24
12
Erec
18
15
12
9
9
6
6
3
3
0
20
40
60
80
100 120
IC (A)
140
160
180
200
Fig.5 Typical Switching Loss vs. Collector Current
4
5
Fig. 4 Typical Capacitance Characteristics
27
0
0
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0
0
5
10
15
20
25
Rg ()
30
35
40
45
50
Fig.6 Typical Switching Loss vs. Gate Resistance
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IRG5K50P5K50PM06E
IRG7T100HF12B
140
Duty Cycle:50%
TJ =125°C
100
TC =80°C
200
150
Rg =15 ohm,VGE =15V
80
IC (A)
Load Current (A)
120
Square Wave:
Vcc
60
100
I
40
50
20
0
Module
Chip
Diode as specified
1
10
Frequency (KHz)
0
100
Fig.7 Typical Load Current vs. Frequency
0
400
600
800
VCES (V)
1000
1200
Fig.8 Reverse Bias Safe Operation Area (RBSOA)
0.25
0.5
ZthJC:Diode
ZthJC:IGBT
0.4
0.15
0.3
ZthJC (K/W)
ZthJC (K/W)
0.20
0.10
0.2
0.05
0.00
0.001
200
0.1
0.01
t (s)
0.1
1
2
0.0
0.001
0.01
t (s)
0.1
1
2
Fig.9 Typical Transient Thermal Impedance (IGBT) Fig.10 Typical Transient Thermal Impedance (Diode)
5
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IRG5K50P5K50PM06E
IRG7T100HF12B
Internal Circuit:
Package Outline (Unit: mm):
Qualification Information†
Qualification Level
Industrial
Moisture Sensitivity Level
Yes
RoHS Compliant
†
Not Applicable
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
IR WORLD HEADQUARTERS: 101 North Sepulveda Blvd, El Segundo, California, 90245, USA
To contact International Rectifier, please visit: http://www.irf.com/whoto-call/
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September 2, 2014