IRG5K50P5K50PM06E
IRG7T150CH12B
VCES = 1200V
IC = 150A at TC = 80°C
High-Side Chopper IGBT with Low-Side Diode
POWIR 62™ Package
tSC ≥ 10µsec
VCE(ON) = 1.90V at IC = 150A
Applications:
Industrial Motor Drive
Uninterruptible Power Supply
Welding and Cutting Machine
Switched Mode Power Supply
Features
Benefits
Low VCE(ON) and Switching Losses
High Efficiency in a Wide Range of Applications
RBSOA Tested
10µsec Short Circuit Safe Operating Area
Rugged Transient Performance
POWIR 62™ Package
Industry Standard
Lead Free
RoHS Compliant, Environmental Friendly
Base Part Number
Package Type
Standard Pack
Quantity
Orderable Part Number
IRG7T150CH12B
POWIR 62™
Box
45
IRG7T150CH12B
Absolute Maximum Ratings of IGBT
VCES
Collector to Emitter Voltage
1200
V
VGES
Continuous Gate to Emitter Voltage
±20
V
IC
Continuous Collector Current
TC = 80°C
150
A
TC = 25°C
300
A
ICM
Pulse Collector Current
TJ = 175°C
300
A
PD
Maximum Power Dissipation (IGBT)
TC = 25°C, TJ = 175°C
910
W
TJ
Maximum IGBT Junction Temperature
175
°C
TJOP
Maximum Operating Junction Temperature Range
-40 to +150
°C
Tstg
Storage Temperature
-40 to +125
°C
1
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IRG5K50P5K50PM06E
IRG7T150CH12B
Electrical Characteristics of IGBT at TJ = 25°C (Unless Otherwise Specified)
Parameter
Min.
V(BR)CES
Collector to Emitter Breakdown
Voltage
VGE(th)
Gate Threshold Voltage
VCE(ON)
Collector to Emitter Saturation Voltage
ICES
Collector to Emitter Leakage Current
IGES
Gate to Emitter Leakage Current
RGint
Internal Gate Resistance
Typ.
Max.
1200
5.0
Unit
Test Conditions
V
VGE = 0V, IC = 2mA
5.8
6.5
V
IC = 7mA, VCE = VGE
1.90
2.20
V
TJ = 25°C
V
TJ = 125°C
2.20
IC = 150A,
VGE = 15V
2
mA
VGE = 0V, VCE = VCES
400
nA
VGE = ±20V, VCE = 0
1.25
Ω
Switching Characteristics of IGBT
Parameter
Min.
Typ.
235
td(on)
Turn-on Delay Time
tr
Rise Time
td(off)
Turn-off Delay Time
tf
Fall Time
Eon
Turn-on Switching Loss
Eoff
Turn-off Switching Loss
Qg
Total Gate Charge
1230
Cies
Input Capacitance
20.2
Coes
Output Capacitance
1.15
Cres
Reverse Transfer Capacitance
0.75
RBSOA
Reverse Bias Safe Operating Area
SCSOA
Short Circuit Safe Operating Area
2
220
115
120
360
380
160
230
9.1
12.2
7.5
11.5
Max.
Unit
ns
ns
ns
ns
mJ
mJ
nC
nF
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TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
VCC=600V,
IC = 150A,
RG = 6.2Ω,
VGE=±15V,
Inductive
Load
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
VCE = 25V, VGE = 0V,
f =1MHz, TJ = 25°C
IC = 300A,VCC = 960V,
VP =1200V, RG = 15Ω,
VGE = +15V to 0V,
TJ = 150°C
Trapezoid
10
Test Conditions
μs
VCC = 600V, VGE = 15V,
TJ = 150°C
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IRG5K50P5K50PM06E
IRG7T150CH12B
Absolute Maximum Ratings of Freewheeling Diode
VRRM
IF
IFM
Repetitive Peak Reverse Voltage
1200
Diode Continuous Forward Current, TC = 25°C
300
Diode Continuous Forward Current, TC = 80°C
150
Pulse Diode Current
300
V
A
A
Electrical and Switching Characteristics of Freewheeling Diode
Parameter
VF
Forward Voltage
Irr
Peak Reverse Recovery Current
Qrr
Reverse Recovery Charge
Erec
Reverse Recovery Energy
Typ.
Max.
2.20
2.70
2.40
75
Unit
V
A
110
7.1
µC
13.0
3.0
mJ
5.6
Test Conditions
TJ = 25°C
TJ = 125°C
IF = 150A ,
VGE = 0V
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
IF=150A,
di/dt=1560A/μs,
Vrr = 600V,
VGE = -15V
TJ = 125°C
Absolute Maximum Ratings of Brake-Chopper Diode
VRRM
IF
IFM
Repetitive Peak Reverse Voltage
1200
Diode Continuous Forward Current, TC = 25°C
300
Diode Continuous Forward Current, TC = 80°C
150
Pulse Diode Current
300
V
A
A
Electrical and Switching Characteristics of Brake-Chopper Diode
Parameter
VF
Forward Voltage
Irr
Peak Reverse Recovery Current
Qrr
Reverse Recovery Charge
Erec
Reverse Recovery Energy
3
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Typ.
Max.
2.20
2.70
2.40
75
110
7.1
13.0
3.0
5.6
Unit
V
A
µC
mJ
Test Conditions
TJ = 25°C
TJ = 125°C
IF = 150A ,
VGE = 0V
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
IF=150A,
di/dt=1560A/μs,
Vrr = 600V,
VGE = -15V
TJ = 125°C
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IRG5K50P5K50PM06E
IRG7T150CH12B
Module Characteristics
Parameter
Min.
Typ.
Max.
Unit
2500
V
Viso
Isolation Voltage
(All Terminals Shorted),
f = 50Hz, 1minute
RθJC
Junction-to-Case (IGBT)
0.165
°C/W
RθJC
Junction-to-Case (Freewheeling Diode)
0.280
°C/W
RθJC
Junction-to-Case
(Brake-Chopper Diode)
0.280
°C/W
RθCS
Case-To-Sink
(Conductive Grease Applied)
0.1
°C/W
M
Power Terminals Screw: M6
3.0
5.0
N·m
M
Mounting Screw: M6
4.0
6.0
N·m
G
Weight
4
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IRG5K50P5K50PM06E
IRG7T150CH12B
300
300
270
VGE =15V
TJ =125°C
240
270
TJ =25°C
210
150
150
IC (A)
IC (A)
180
120
90
60
60
30
30
0.8
1.2
1.6
2.0
VCE (V)
2.4
2.8
3.2
VGE =13V
VGE =11V
VGE =9V
120
90
0.4
VGE =17V
VGE =15V
210
180
0
0.0
TJ =125°C
240
0
0.0
3.6
0.4
0.8
1.2
1.6
2.0
VCE (V)
2.4
2.8
3.2
3.6
Fig.2 Typical IGBT Output Characteristics
Fig.1 Typical IGBT Saturation Characteristics
300
60
270
VGE =0V
TJ =125°C
240
TJ =25°C
210
VGE =0V,f =1MHz
Cies
50
Coes
40
C (nF)
IF (A)
180
150
120
30
20
90
60
10
30
0
0.0
0.4
0.8
1.2
1.6
2.0
VF (V)
2.4
2.8
3.2
0
3.6
5
10
15
20
25
VCE (V)
Fig. 4 Typical Capacitance Characteristics
Fig.3 Typical Forward Characteristics,
Freewheeling Diode
40
28
VCC =600V,VGE =+/-15V,
IC =150A,TJ =125°C
VCC =600V,VGE =+/-15V,
Rg =6.2 ohm,TJ =125°C
20
Eoff
Eon
16
Erec
Eoff
Eon
30
Erec
E (mJ)
24
E (mJ)
0
12
8
20
10
4
0
0
30
60
90
120
150 180
IC (A)
210
240
270
300
Fig.5 Typical Switching Loss vs. Collector Current
5
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0
0
5
10
15
Rg ()
20
25
30
Fig.6 Typical Switching Loss vs. Gate Resistance
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IRG5K50P5K50PM06E
IRG7T150CH12B
180
Duty Cycle:50%
TJ =125°C
300
150
TC =80°C
250
Rg =6.2 ohm,VGE =15V
120
Vcc
90
I
60
30
0
200
Square Wave:
IC (A)
Load Current (A)
210
150
100
1
Module
Chip
50
Diode as specified
10
Frequency (KHz)
0
100
Fig.7 Typical Load Current vs. Frequency
0
400
600
800
VCES (V)
1000
1200
Fig.8 Reverse Bias Safe Operation Area (RBSOA)
0.20
0.4
ZthJC:Diode
ZthJC:IGBT
0.3
ZthJC (K/W)
0.15
ZthJC (K/W)
200
0.10
0.2
0.1
0.05
0.00
0.001
0.01
0.1
1
2
t (s )
0.0
0.001
0.01
t ( s)
0.1
1
2
Fig.9 Typical Transient Thermal Impedance (IGBT) Fig.10 Typical Transient Thermal Impedance (Diode)
300
270
240
210
VGE =0V
TJ =125°C
TJ =25°C
IF (A)
180
150
120
90
60
30
0
0.0
0.4
0.8
1.2
1.6
2.0
VF (V)
2.4
2.8
3.2
3.6
Fig.11 Typical Forward Characteristics,
Brake-Chopper Diode
6
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IRG5K50P5K50PM06E
IRG7T150CH12B
Internal Circuit:
Package Outline (Unit: mm):
7
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IRG5K50P5K50PM06E
IRG7T150CH12B
Qualification Information†
Qualification Level
Industrial
Moisture Sensitivity Level
Yes
RoHS Compliant
†
Not Applicable
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
IR WORLD HEADQUARTERS: 101 North Sepulveda Blvd, El Segundo, California, 90245, USA
To contact International Rectifier, please visit: http://www.irf.com/whoto-call/
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October 1, 2014