IRG7T300CL12B

IRG5K50P5K50PM06E IRG7T300CL12B VCES = 1200V IC = 300A at TC = 80°C Low-Side Chopper IGBT with High-Side Diode POWIR 62™ Package tSC ≥ 10µsec VCE(ON) = 1.90V at IC = 300A Applications：  Industrial Motor Drive Uninterruptible Power Supply Welding and Cutting Machine Switched Mode Power Supply    Features Benefits Low VCE(ON) and Switching Losses High Efficiency in a Wide Range of Applications RBSOA Tested 10µsec Short Circuit Safe Operating Area Rugged Transient Performance POWIR 62™ Package Industry Standard Lead Free RoHS Compliant, Environmental Friendly Base Part Number Package Type Standard Pack Quantity Orderable Part Number IRG7T300CL12B POWIR 62™ Box 45 IRG7T300CL12B Absolute Maximum Ratings of IGBT VCES Collector to Emitter Voltage 1200 V VGES Continuous Gate to Emitter Voltage ±20 V IC Continuous Collector Current TC = 80°C 300 A TC = 25°C 570 A ICM Pulse Collector Current TJ = 175°C 600 A PD Maximum Power Dissipation (IGBT) TC = 25°C, TJ = 175°C 1600 W TJ Maximum IGBT Junction Temperature 175 °C TJOP Maximum Operating Junction Temperature Range -40 to +150 °C Tstg Storage Temperature -40 to +125 °C 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 1, 2014 IRG5K50P5K50PM06E IRG7T300CL12B Electrical Characteristics of IGBT at TJ = 25°C (Unless Otherwise Specified) Parameter Min. V(BR)CES Collector to Emitter Breakdown Voltage VGE(th) Gate Threshold Voltage VCE(ON) Collector to Emitter Saturation Voltage ICES Collector to Emitter Leakage Current IGES Gate to Emitter Leakage Current RGint Internal Gate Resistance Typ. Max. 1200 5.0 Unit Test Conditions V VGE = 0V, IC = 4mA 5.8 6.5 V IC = 14mA, VCE = VGE 1.90 2.20 V TJ = 25°C V TJ = 125°C 2.20 IC = 300A, VGE = 15V 4 mA VGE = 0V, VCE = VCES 400 nA VGE = ±20V, VCE = 0 1.25 Ω Switching Characteristics of IGBT Parameter Min. Typ. 300 td(on) Turn-on Delay Time tr Rise Time td(off) Turn-off Delay Time tf Fall Time Eon Turn-on Switching Loss Eoff Turn-off Switching Loss Qg Total Gate Charge 1760 Cies Input Capacitance 42.4 Coes Output Capacitance 2.18 Cres Reverse Transfer Capacitance 1.27 RBSOA Reverse Bias Safe Operating Area SCSOA Short Circuit Safe Operating Area 2 290 200 210 540 600 175 195 16.9 21.4 24.8 31.7 Max. Unit ns ns ns ns mJ mJ nC nF www.irf.com © 2014 International Rectifier TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C VCC=600V, IC = 300A, RG = 3.3Ω, VGE=±15V, Inductive Load TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C VCE = 25V, VGE = 0V, f ＝1MHz, TJ = 25°C IC = 600A,VCC = 960V, VP =1200V, RG = 15Ω, VGE = +15V to 0V, TJ = 150°C Trapezoid 10 Test Conditions μs VCC = 600V, VGE = 15V, TJ = 150°C Submit Datasheet Feedback October 1, 2014 IRG5K50P5K50PM06E IRG7T300CL12B Absolute Maximum Ratings of Freewheeling Diode VRRM IF IFM Repetitive Peak Reverse Voltage 1200 Diode Continuous Forward Current, TC = 25°C 600 Diode Continuous Forward Current, TC = 80°C 300 Pulse Diode Current 600 V A A Electrical and Switching Characteristics of Freewheeling Diode Parameter VF Forward Voltage Irr Peak Reverse Recovery Current Qrr Reverse Recovery Charge Erec Reverse Recovery Energy Typ. Max. 2.20 2.70 2.40 145 Unit V A 180 18.9 µC 32.6 7.6 mJ 15.2 Test Conditions TJ = 25°C TJ = 125°C IF = 300A , VGE = 0V TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C IF＝300A, di/dt=1670A/μs, Vrr = 600V, VGE = -15V TJ = 125°C Absolute Maximum Ratings of Brake-Chopper Diode VRRM IF IFM Repetitive Peak Reverse Voltage 1200 Diode Continuous Forward Current, TC = 25°C 600 Diode Continuous Forward Current, TC = 80°C 300 Pulse Diode Current 600 V A A Electrical and Switching Characteristics of Brake-Chopper Diode Parameter VF Forward Voltage Irr Peak Reverse Recovery Current Qrr Reverse Recovery Charge Erec Reverse Recovery Energy 3 www.irf.com © 2014 International Rectifier Typ. Max. 2.20 2.70 2.40 145 180 18.9 32.6 7.6 15.2 Unit V A µC mJ Test Conditions TJ = 25°C TJ = 125°C IF = 300A , VGE = 0V TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C IF＝300A, di/dt=1670A/μs, Vrr = 600V, VGE = -15V TJ = 125°C Submit Datasheet Feedback October 1, 2014 IRG5K50P5K50PM06E IRG7T300CL12B Module Characteristics Parameter Min. Typ. Max. Unit 2500 V Viso Isolation Voltage (All Terminals Shorted), f = 50Hz, 1minute RθJC Junction-to-Case (IGBT) 0.099 °C/W RθJC Junction-to-Case (Freewheeling Diode) 0.136 °C/W RθJC Junction-to-Case (Brake-Chopper Diode) 0.136 °C/W RθCS Case-To-Sink (Conductive Grease Applied) 0.1 °C/W M Power Terminals Screw: M6 3.0 5.0 N·m M Mounting Screw: M6 4.0 6.0 N·m G Weight 4 www.irf.com © 2014 International Rectifier 230 Submit Datasheet Feedback g October 1, 2014 IRG5K50P5K50PM06E IRG7T300CL12B 600 600 540 540 VGE =15V TJ =125°C 480 TJ =25°C 420 TJ =125°C VGE =17V VGE =15V 480 420 VGE =13V VGE =11V 360 IC (A) IC (A) 360 300 240 300 180 180 120 120 60 60 0 0.0 0.4 0.8 1.2 1.6 2.0 VCE (V) 2.4 2.8 3.2 0 0.0 3.6 0.4 0.8 1.2 1.6 2.0 2.4 VCE (V) 2.8 3.2 3.6 4.0 Fig.2 Typical IGBT Output Characteristics Fig.1 Typical IGBT Saturation Characteristics 600 VGE =9V 240 120 VGE =0V TJ =125°C 540 480 TJ =25°C 420 VGE = 0V,f =1 MHz Cies 100 Coes 80 C (nF) IF (A) 360 300 240 60 40 180 120 20 60 0 0.0 0.4 0.8 1.2 1.6 2.0 VF (V) 2.4 2.8 3.2 3.6 0 4.0 5 10 15 VCE (V) 20 25 Fig. 4 Typical Capacitance Characteristics Fig.3 Typical Forward Characteristics, Freewheeling Diode 100 120 VCC =600V,VGE =+/-15V, Rg =3.3 ohm,TJ =125°C 80 VCC=600V,VGE=+/-15V, IC=300A,TJ =125°C 100 Eoff Eon 60 Eoff Eon 80 Erec E (mJ) E (mJ) 0 40 Erec 60 40 20 0 20 0 60 120 180 240 300 360 IC (A) 420 480 540 600 Fig.5 Typical Switching Loss vs. Collector Current 5 www.irf.com © 2014 International Rectifier 0 0 3 6 9 12 15 18 Rg () 21 24 27 30 Fig.6 Typical Switching Loss vs. Gate Resistance Submit Datasheet Feedback October 1, 2014 IRG5K50P5K50PM06E IRG7T300CL12B 360 600 Duty Cycle:50% TJ =125°C 300 500 TC =80°C Rg =3.3 ohm,VGE =15V Square Wave: 180 300 Vcc 120 I 60 0 400 IC (A) Load Current (A) 240 200 100 Diode as specified 1 10 Frequency (KHz) 0 100 Fig.7 Typical Load Current vs. Frequency Module Chip 0 200 400 600 VCES (V) 800 1000 1200 Fig.8 Reverse Bias Safe Operation Area (RBSOA) 0.12 0.15 ZthJC:Diode ZthJC:IGBT 0.10 0.12 ZthJC (K/W) ZthJC (K/W) 0.08 0.06 0.04 0.09 0.06 0.03 0.02 0.00 0.001 0.01 t ( s) 0.1 1 2 0.00 0.001 0.01 0.1 1 2 t ( s) Fig.9 Typical Transient Thermal Impedance (IGBT) Fig.10 Typical Transient Thermal Impedance (Diode) 600 540 480 VGE =0V TJ =125°C TJ =25°C 420 IF (A) 360 300 240 180 120 60 0 0.0 0.4 0.8 1.2 1.6 2.0 VF (V) 2.4 2.8 3.2 3.6 4.0 Fig.11 Typical Forward Characteristics, Brake-Chopper Diode 6 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 1, 2014 IRG5K50P5K50PM06E IRG7T300CL12B Internal Circuit: Package Outline (Unit: mm): 7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 1, 2014 IRG5K50P5K50PM06E IRG7T300CL12B Qualification Information† Qualification Level Industrial Moisture Sensitivity Level Yes RoHS Compliant † Not Applicable Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ IR WORLD HEADQUARTERS: 101 North Sepulveda Blvd, El Segundo, California, 90245, USA To contact International Rectifier, please visit: http://www.irf.com/whoto-call/ 8 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 1, 2014