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IRG7T400SD12B

IRG7T400SD12B

  • 厂商:

    EUPEC(英飞凌)

  • 封装:

    POWIR®62

  • 描述:

    MODIGBT1200V400APOWIR62

  • 数据手册
  • 价格&库存
IRG7T400SD12B 数据手册
IRG5K50P5K50PM06E IRG7T400SD12B VCES = 1200V IC = 400A at TC = 80°C Single Switch IGBT with Soft Recovery Diode POWIR 62™ Package tSC ≥ 10µsec VCE (ON) = 1.90V at IC = 400A Applications:  Industrial Motor Drive Uninterruptible Power Supply Welding and Cutting Machine Switched Mode Power Supply Induction Heating     Features Benefits Low VCE(ON) and Switching Losses High Efficiency in a Wide Range of Applications RBSOA Tested 10µsec Short Circuit Safe Operating Area Rugged Transient Performance POWIR 62™ Package Industry Standard Lead Free RoHS Compliant, Environmental Friendly Base Part Number Package Type Standard Pack Quantity Orderable Part Number IRG7T400SD12B POWIR 62™ Box 45 IRG7T400SD12B Absolute Maximum Ratings of IGBT VCES Collector to Emitter Voltage 1200 V VGES Continuous Gate to Emitter Voltage ±20 V IC Continuous Collector Current TC = 80°C 400 A TC = 25°C 780 A ICM Pulse Collector Current TJ = 175°C 800 A PD Maximum Power Dissipation (IGBT) TC = 25°C, TJ = 175°C 2140 W TJ Maximum IGBT Junction Temperature 175 °C TJOP Maximum Operating Junction Temperature Range -40 to +150 °C Tstg Storage Temperature -40 to +125 °C 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback September 2, 2014 IRG5K50P5K50PM06E IRG7T400SD12B Electrical Characteristics of IGBT at TJ = 25°C (Unless Otherwise Specified) Parameter Min. V(BR)CES Collector to Emitter Breakdown Voltage VGE(th) Gate Threshold Voltage VCE(ON) Collector to Emitter Saturation Voltage ICES Collector to Emitter Leakage Current IGES Gate to Emitter Leakage Current RGint Internal Gate Resistance Typ. Max. 1200 5.0 Unit Test Conditions V VGE = 0V, IC = 4mA 5.8 6.5 V IC = 20mA, VCE = VGE 1.90 2.20 V TJ = 25°C V TJ = 125°C 2.20 IC = 400A, VGE = 15V 4 mA VGE = 0V, VCE = VCES 400 nA VGE = ±20V, VCE = 0 0.63 Ω Switching Characteristics of IGBT Parameter Min. Typ. 330 td(on) Turn-on Delay Time tr Rise Time td(off) Turn-off Delay Time tf Fall Time Eon Turn-on Switching Loss Eoff Turn-off Switching Loss Qg Total Gate Charge 3440 Cies Input Capacitance 58.5 Coes Output Capacitance 3.03 Cres Reverse Transfer Capacitance 1.82 RBSOA Reverse Bias Safe Operating Area SCSOA Short Circuit Safe Operating Area 2 310 180 185 460 490 175 150 13.3 17.0 32.4 39.3 Max. Unit ns ns ns ns mJ mJ nC nF www.irf.com © 2014 International Rectifier TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C VCC=600V, IC = 400A, RG = 1.8Ω, VGE=±15V, Inductive Load TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C VCE = 25V, VGE = 0V, f =1MHz, TJ = 25°C IC = 800A,VCC = 960V, VP =1200V, RG = 4.7Ω, VGE = +15V to 0V, TJ = 150°C Trapezoid 10 Test Conditions μs VCC = 600V, VGE = 15V, TJ = 150°C Submit Datasheet Feedback September 2, 2014 IRG5K50P5K50PM06E IRG7T400SD12B Absolute Maximum Ratings of Freewheeling Diode VRRM IF IFM Repetitive Peak Reverse Voltage 1200 Diode Continuous Forward Current, TC = 25°C 800 Diode Continuous Forward Current, TC = 80°C 400 Pulse Diode Current 800 V A A Electrical and Switching Characteristics of Freewheeling Diode Parameter VF Forward Voltage Irr Peak Reverse Recovery Current Qrr Reverse Recovery Charge Erec Reverse Recovery Energy Typ. Max. 2.20 2.70 2.40 185 255 23.7 37.0 11.0 18.8 Unit V A µC mJ Test Conditions TJ = 25°C TJ = 125°C IF = 400A , VGE = 0V TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C IF=400A, di/dt=2900A/μs, Vrr = 600V, VGE = -15V TJ = 125°C Module Characteristics Parameter Min. Typ. Max. Unit 2500 V Viso Isolation Voltage (All Terminals Shorted), f = 50Hz, 1minute RθJC Junction-to-Case (IGBT) 0.070 °C/W RθJC Junction-to-Case (Freewheeling Diode) 0.102 °C/W RθCS Case-To-Sink (Conductive Grease Applied) 0.1 °C/W M Power Terminals Screw: M6 3.0 5.0 N·m M Mounting Screw: M6 4.0 6.0 N·m G Weight 3 www.irf.com © 2014 International Rectifier 310 Submit Datasheet Feedback g September 2, 2014 IRG5K50P5K50PM06E IRG7T400SD12B 800 800 720 720 VGE =15V TJ =125°C 640 TJ =25°C 560 VGE =13V VGE =11V 480 IC (A) IC (A) VGE =17V VGE =15V 560 480 400 400 VGE =9V 320 320 240 240 160 160 80 80 0 0.0 0.4 0.8 1.2 1.6 2.0 VCE (V) 2.4 2.8 3.2 0 0.0 3.6 0.6 1.2 1.8 VCE(V) 2.4 3.0 3.6 Fig.2 Typical IGBT Output Characteristics Fig.1 Typical IGBT Saturation Characteristics 800 100 600 VCE= 0 V,f=1MHz Cies 90 VGE =0V TJ =125°C 700 80 TJ =25°C Coes 70 500 IF (A) C (nF) 60 400 50 40 300 30 200 20 100 10 0 0.0 0.4 0.8 1.2 1.6 2.0 VF (V) 2.4 2.8 3.2 0 3.6 0 5 10 15 20 25 VCE (V) Fig.3 Typical Diode Forward Characteristics Fig. 4 Typical Capacitance Characteristics 120 200 VCC =600V,VGE =+/-15V, Rg =1.8 ohm,TJ =125°C 100 VCC =600V,VGE =+/-15V, IC =400A,TJ =125°C 180 160 Eoff Eon 80 Eoff Eon 140 120 Erec E (mJ) E (mJ) TJ =125°C 640 60 40 Erec 100 80 60 40 20 20 0 0 80 160 240 320 400 480 IC (A) 560 640 720 800 Fig.5 Typical Switching Loss vs. Collector Current 4 www.irf.com © 2014 International Rectifier 0 0 5 10 15 Rg () 20 25 30 Fig.6 Typical Switching Loss vs. Gate Resistance Submit Datasheet Feedback September 2, 2014 IRG5K50P5K50PM06E IRG7T400SD12B 560 Duty Cycle:50% TJ =125°C 480 TC =80°C 400 Rg =1.8 ohm,VGE =15V 600 320 IC (A) Load Current (A) 800 Square Wave: Vcc 240 400 I 160 200 80 0 Module Chip Diode as specified 1 10 Frequency (KHz) 0 100 Fig.7 Typical Load Current vs. Frequency 0 200 400 600 800 VCES (V) 1000 1200 Fig.8 Reverse Bias Safe Operation Area (RBSOA) 0.12 0.08 ZthJC:IGBT 0.10 ZthJC:Diode 0.06 ZthJC (K/W) ZthJC (K/W) 0.08 0.06 0.04 0.04 0.02 0.02 0.00 0.001 0.01 t (s ) 0.1 1 2 0.00 0.001 0.01 t (s) 0.1 1 2 Fig.9 Typical Transient Thermal Impedance (IGBT) Fig.10 Typical Transient Thermal Impedance (Diode) 5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback September 2, 2014 IRG5K50P5K50PM06E IRG7T400SD12B Internal Circuit: Package Outline (Unit: mm): Qualification Information† Qualification Level Industrial Moisture Sensitivity Level Yes RoHS Compliant † Not Applicable Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ IR WORLD HEADQUARTERS: 101 North Sepulveda Blvd, El Segundo, California, 90245, USA To contact International Rectifier, please visit: http://www.irf.com/whoto-call/ 6 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback September 2, 2014
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