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IRG7T50HF12A

IRG7T50HF12A

  • 厂商:

    EUPEC(英飞凌)

  • 封装:

    POWIR®34

  • 描述:

    MOD IGBT 1200V 50A POWIR 34

  • 数据手册
  • 价格&库存
IRG7T50HF12A 数据手册
IRG5K50P5K50PM06E IRG7T50HF12A IGBT Half-Bridge POWIR 34™ Package VCES = 1200V IC = 50A at TC = 80⁰C tSC ≥ 10µsec VCE(ON) = 1.90V at IC = 50A Applications:  Industrial Motor Drive Uninterruptible Power Supply Welding and Cutting Machine Switched Mode Power Supply Induction Heating AC Inverter Drive      Features Benefits Low VCE(ON) and Switching Losses High Efficiency in a Wide Range of Applications 100% RBSOA Tested 10µsec Short Circuit Safe Operating Area Rugged Transient Performance POWIR 34™ Package Industry Standard Lead Free RoHS Compliant, Environmental Friendly Base Part Number Package Type Standard Pack Quantity Orderable Part Number IRG7T50HF12A POWIR 34™ Box 80 IRG7T50HF12A Absolute Maximum Ratings of IGBT VCES Collector to Emitter Voltage 1200 V VGES Continuous Gate to Emitter Voltage ±20 V IC Continuous Collector Current TC = 80°C 50 A TC = 25°C 100 A ICM Pulse Collector Current TJ = 175°C 100 A PD Maximum Power Dissipation (IGBT) TC = 25°C, TJ = 175°C 340 W TJ Maximum IGBT Junction Temperature 175 °C TJOP Maximum Operating Junction Temperature Range -40 to +150 °C Tstg Storage Temperature -40 to +125 °C 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 1, 2014 IRG5K50P5K50PM06E IRG7T50HF12A Electrical Characteristics of IGBT at TJ = 25°C (Unless Otherwise Specified) Parameter Min. V(BR)CES Collector to Emitter Breakdown Voltage VGE(th) Gate Threshold Voltage VCE(ON) Collector to Emitter Saturation Voltage ICES Collector to Emitter Leakage Current IGES Gate to Emitter Leakage Current Typ. Max. 1200 5.0 Unit Test Conditions V VGE = 0V, IC = 1mA 5.8 6.5 V IC = 2.4mA, VCE = VGE 1.90 2.20 V TJ = 25°C V TJ = 125°C 2.20 IC = 50A, VGE = 15V 1 mA VGE = 0V, VCE = VCES 400 nA VGE = ±20V, VCE = 0V Max. Unit Switching Characteristics of IGBT Parameter Min. Typ. 240 td(on) Turn-on Delay Time tr Rise Time td(off) Turn-off Delay Time tf Fall Time Eon Turn-on Switching Loss Eoff Turn-off Switching Loss Qg Total Gate Charge 390 Cies Input Capacitance 6.7 Coes Output Capacitance 0.38 Cres Reverse Transfer Capacitance 0.22 RBSOA Reverse Bias Safe Operating Area SCSOA Short Circuit Safe Operating Area 2 235 75 75 235 250 165 280 3.72 4.48 2.25 3.54 ns ns ns ns mJ mJ nC nF www.irf.com © 2014 International Rectifier TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C VCC=600V, IC = 50A, RG = 15Ω, VGE=±15V, Inductive Load TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C VCE = 25V, VGE = 0V, f =1MHz, TJ = 25°C IC = 100A,VCC = 960V, VP = 1200V, RG = 15Ω, VGE = +15V to 0V, TJ = 150°C Trapezoid 10 Test Conditions μs VCC = 600V, VGE = 15V, TJ = 150°C Submit Datasheet Feedback October 1, 2014 IRG5K50P5K50PM06E IRG7T50HF12A Absolute Maximum Ratings of Freewheeling Diode VRRM 1200 Repetitive Peak Reverse Voltage IF IFM Diode Continuous Forward Current, TC = 25°C 100 Diode Continuous Forward Current, TC = 80°C 50 V A 100 Pulse Diode Current A Electrical and Switching Characteristics of Freewheeling Diode Parameter VF Forward Voltage Irr Peak Reverse Recovery Current Qrr Reverse Recovery Charge Erec Reverse Recovery Energy Typ. Max. 2.00 2.70 2.20 30 Unit V A 40 4.4 µC 7.3 1.5 mJ 3.0 Test Conditions TJ = 25°C TJ = 125°C IF = 50A , VGE = 0V TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C IF=50A, di/dt=350A/μs, Vrr = 600V, VGE = -15V TJ = 125°C Module Characteristics Parameter Min. Typ. Max. Unit 2500 V Viso Isolation Voltage (All Terminals Shorted), f = 50Hz, 1minute RθJC Junction-to-Case (IGBT) 0.44 °C/W RθJC Junction-to-Case (Diode) 0.87 °C/W RθCS Case-To-Sink (Conductive Grease Applied) 0.1 °C/W M Power Terminals Screw: M5 3.0 5.0 N·m M Mounting Screw: M6 4.0 6.0 N·m G Weight 3 www.irf.com © 2014 International Rectifier 165 Submit Datasheet Feedback g October 1, 2014 IRG5K50P5K50PM06E IRG7T50HF12A 100 100 VGE =15V TJ =125°C 90 80 60 50 50 IC (A) IC (A) 70 60 40 30 20 20 10 10 0.4 0.8 1.2 1.6 2.0 VCE (V) 2.4 2.8 3.2 0 0.0 3.6 Fig.1 Typical IGBT Saturation Characteristics 0.6 1.2 1.8 2.4 VCE (V) 3.0 3.6 4.2 4.8 Fig.2 Typical IGBT Output Characteristics 14 100 VGE =0V TJ =125°C 90 80 VCE= 0 V,f=1MHz Cies 12 TJ =25°C Coes 10 70 60 8 C (nF) IF (A) VGE =11V VGE =9V 40 30 0 0.0 VGE =17V VGE =15V VGE =13V 80 TJ =25°C 70 TJ =125°C 90 50 6 40 30 4 20 2 10 0 0.0 0.4 0.8 1.2 1.6 2.0 VF (V) 2.4 2.8 3.2 0 3.6 Fig.3 Typical Diode Forward Characteristics VCE (V) 15 20 25 6 Eoff Eon 5 Erec VCC =600V,VGE =+/-15V, IC =50A ,TJ =125°C 8 Eoff Eon 7 6 E (mJ) E (mJ) 10 9 VCC =600V,VGE =+/-15V, Rg =15 ohm,TJ =125°C 7 4 3 Erec 5 4 3 2 2 1 1 0 10 20 30 40 50 60 IC (A) 70 80 90 100 Fig.5 Typical Switching Loss vs. Collector Current 4 5 Fig. 4 Typical Capacitance Characteristics 8 0 0 www.irf.com © 2014 International Rectifier 0 0 5 10 15 20 Rg () 25 30 35 40 Fig.6 Typical Switching Loss vs. Gate Resistance Submit Datasheet Feedback October 1, 2014 IRG5K50P5K50PM06E IRG7T50HF12A 70 Duty Cycle:50% TJ =125°C 60 TC =80°C 100 80 Rg =15 ohm,VGE =15V 50 Square Wave: 40 IC (A) Load Current (A) 80 Vcc 30 60 40 I 20 20 0 Module Chip Diode as specified 10 1 10 Frequency (KHz) 0 100 Fig.7 Typical Load Current vs. Frequency 200 400 600 800 VCES (V) 1000 1200 Fig.8 Reverse Bias Safe Operation Area (RBSOA) 0.6 0.5 0 1.0 ZthJC:Diode ZthJC:IGBT 0.8 ZthJC (K/W) ZthJC (K/W) 0.4 0.3 0.6 0.4 0.2 0.2 0.1 0.0 0.001 0.01 t (s) 0.1 1 2 0.0 0.001 0.01 t (s) 0.1 1 2 Fig.9 Typical Transient Thermal Impedance (IGBT) Fig.10 Typical Transient Thermal Impedance (Diode) 5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 1, 2014 IRG5K50P5K50PM06E IRG7T50HF12A Internal Circuit: Package Outline (Unit: mm): Qualification Information† Qualification Level Industrial Moisture Sensitivity Level Yes RoHS Compliant † Not Applicable Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ IR WORLD HEADQUARTERS: 101 North Sepulveda Blvd, El Segundo, California, 90245, USA To contact International Rectifier, please visit: http://www.irf.com/whoto-call/ 6 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 1, 2014
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