IRG5K50P5K50PM06E
IRG7T75HF12A
IGBT Half-Bridge
POWIR 34™ Package
VCES = 1200V
IC = 75A at TC = 80⁰C
tSC ≥ 10µsec
VCE(ON) = 1.90V at IC = 75A
Applications：
Industrial Motor Drive
Uninterruptible Power Supply
Welding and Cutting Machine
Switched Mode Power Supply
Induction Heating
AC Inverter Drive
Features
Benefits
Low VCE(ON) and Switching Losses
High Efficiency in a Wide Range of Applications
100% RBSOA Tested
10µsec Short Circuit Safe Operating Area
Rugged Transient Performance
POWIR 34™ Package
Industry Standard
Lead Free
RoHS Compliant, Environmental Friendly
Base Part Number
Package Type
Standard Pack
Quantity
Orderable Part Number
IRG7T75HF12A
POWIR 34™
Box
80
IRG7T75HF12A
Absolute Maximum Ratings of IGBT
VCES
Collector to Emitter Voltage
1200
V
VGES
Continuous Gate to Emitter Voltage
±20
V
IC
Continuous Collector Current
TC = 80°C
75
A
TC = 25°C
150
A
ICM
Pulse Collector Current
TJ = 175°C
150
A
PD
Maximum Power Dissipation (IGBT)
TC = 25°C, TJ = 175°C
450
W
TJ
Maximum IGBT Junction Temperature
175
°C
TJOP
Maximum Operating Junction Temperature Range
-40 to +150
°C
Tstg
Storage Temperature
-40 to +125
°C
1
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IRG5K50P5K50PM06E
IRG7T75HF12A
Electrical Characteristics of IGBT at TJ = 25°C (Unless Otherwise Specified)
Parameter
Min.
V(BR)CES
Collector to Emitter Breakdown
Voltage
VGE(th)
Gate Threshold Voltage
VCE(ON)
Collector to Emitter Saturation Voltage
ICES
Collector to Emitter Leakage Current
IGES
Gate to Emitter Leakage Current
RGint
Internal Gate Resistance
Typ.
Max.
1200
5.0
Unit
Test Conditions
V
VGE = 0V, IC = 1mA
5.8
6.5
V
IC = 3.5mA, VCE = VGE
1.90
2.20
V
TJ = 25°C
V
TJ = 125°C
2.20
IC = 75A,
VGE = 15V
1
mA
VGE = 0V, VCE = VCES
400
nA
VGE = ±20V, VCE = 0V
2.5
Ω
Switching Characteristics of IGBT
Parameter
Min.
Typ.
190
td(on)
Turn-on Delay Time
tr
Rise Time
td(off)
Turn-off Delay Time
tf
Fall Time
Eon
Turn-on Switching Loss
Eoff
Turn-off Switching Loss
Qg
Total Gate Charge
630
Cies
Input Capacitance
10.4
Coes
Output Capacitance
0.56
Cres
Reverse Transfer Capacitance
0.37
RBSOA
Reverse Bias Safe Operating Area
SCSOA
Short Circuit Safe Operating Area
2
175
100
110
270
280
160
240
5.2
6.9
3.6
5.5
Max.
Unit
ns
ns
ns
ns
mJ
mJ
nC
nF
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TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
VCC=600V,
IC = 75A,
RG = 15Ω,
VGE=±15V,
Inductive
Load
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
VCE = 25V, VGE = 0V,
f ＝1MHz, TJ = 25°C
IC = 150A,VCC = 960V,
VP = 1200V, RG = 15Ω,
VGE = +15V to 0V,
TJ = 150°C
Trapezoid
10
Test Conditions
μs
VCC = 600V, VGE = 15V,
TJ = 150°C
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IRG5K50P5K50PM06E
IRG7T75HF12A
Absolute Maximum Ratings of Freewheeling Diode
VRRM
1200
Repetitive Peak Reverse Voltage
IF
IFM
Diode Continuous Forward Current, TC = 25°C
150
Diode Continuous Forward Current, TC = 80°C
75
V
A
150
Pulse Diode Current
A
Electrical and Switching Characteristics of Freewheeling Diode
Parameter
VF
Forward Voltage
Irr
Peak Reverse Recovery Current
Qrr
Reverse Recovery Charge
Erec
Reverse Recovery Energy
Typ.
Max.
2.20
2.70
2.40
30
Unit
V
A
45
3.6
µC
7.4
1.5
mJ
3.3
Test Conditions
TJ = 25°C
TJ = 125°C
IF = 75A ,
VGE = 0V
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
IF＝75A,
di/dt=750A/μs,
Vrr = 600V,
VGE = -15V
TJ = 125°C
Module Characteristics
Parameter
Min.
Typ.
Max.
Unit
2500
V
Viso
Isolation Voltage
(All Terminals Shorted),
f = 50Hz, 1minute
RθJC
Junction-to-Case (IGBT)
0.33
°C/W
RθJC
Junction-to-Case (Diode)
0.56
°C/W
RθCS
Case-To-Sink
(Conductive Grease Applied)
0.1
°C/W
M
Power Terminals Screw: M5
3.0
5.0
N·m
M
Mounting Screw: M6
4.0
6.0
N·m
G
Weight
3
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October 1, 2014
IRG5K50P5K50PM06E
IRG7T75HF12A
150
150
VGE =15V
TJ =125°C
135
120
135
TJ =125°C
105
VGE =17V
VGE =15V
105
VGE =13V
VGE =11V
90
IC (A)
90
IC (A)
TJ =125°C
120
75
60
75
45
45
30
30
15
15
0
0.0
0.4
0.8
1.2
1.6
2.0
VCE (V)
2.4
2.8
3.2
VGE =9V
60
0
0.0
3.6
Fig.1 Typical IGBT Saturation Characteristics
0.6
1.2
1.8
2.4
VCE (V)
3.0
3.6
4.2
4.8
Fig.2 Typical IGBT Output Characteristics
150
20
VGE =0V
TJ =125°C
135
120
VCE= 0 V,f=1MHz
Cies
TJ =25°C
105
Coes
15
C (nF)
IF (A)
90
75
60
45
10
5
30
15
0
0.0
0.4
0.8
1.2
1.6
2.0
VF (V)
2.4
2.8
3.2
0
3.6
Fig.3 Typical Diode Forward Characteristics
14
14
15
20
25
Eoff
Eon
12
E (mJ)
E (mJ)
VCE (V)
VCC=600V,VGE=+/-15V,
IC=75A,TJ =125°C
16
Erec
8
10
18
Eoff
Eon
10
5
Fig. 4 Typical Capacitance Characteristics
VCC =600V,VGE =+/-15V,
Rg =15 ohm,TJ =125°C
12
0
6
Erec
10
8
6
4
4
2
0
2
0
15
30
45
60
75
90
IC (A)
105
120
135
150
Fig.5 Typical Switching Loss vs. Collector Current
4
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0
0
5
10
15
20
25
30
Rg ()
35
40
45
50
Fig.6 Typical Switching Loss vs. Gate Resistance
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IRG5K50P5K50PM06E
IRG7T75HF12A
100
Duty Cycle:50%
TJ =125°C
90
80
TC =80°C
70
120
Rg =15 ohm,VGE =15V
60
Square Wave:
50
IC (A)
Load Current (A)
150
Vcc
40
60
I
30
20
30
Diode as specified
10
0
90
1
Module
Chip
10
Frequency (KHz)
0
100
Fig.7 Typical Load Current vs. Frequency
0
200
400
600
800
VCES (V)
1000
1200
Fig.8 Reverse Bias Safe Operation Area (RBSOA)
0.4
0.7
ZthJC:IGBT
0.6
0.3
ZthJC:Diode
ZthJC (K/W)
ZthJC (K/W)
0.5
0.2
0.4
0.3
0.2
0.1
0.1
0.0
0.001
0.01
t (s)
0.1
1
2
0.0
0.001
0.01
t (s)
0.1
1
3
Fig.9 Typical Transient Thermal Impedance (IGBT) Fig.10 Typical Transient Thermal Impedance (Diode)
5
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IRG5K50P5K50PM06E
IRG7T75HF12A
Internal Circuit:
Package Outline (Unit: mm):
Qualification Information†
Qualification Level
Industrial
Moisture Sensitivity Level
Yes
RoHS Compliant
†
Not Applicable
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
IR WORLD HEADQUARTERS: 101 North Sepulveda Blvd, El Segundo, California, 90245, USA
To contact International Rectifier, please visit: http://www.irf.com/whoto-call/
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