IRG7U100HF12B

IRG5K50P5K50PM06E IRG7U100HF12B IGBT Half-Bridge POWIR 62™ Package VCES = 1200V IC = 100A at TC = 80°C VCE(ON) = 1.70V at IC = 100A Applications：  Industrial Motor Drive Uninterruptible Power Supply Welding and Cutting Machine Switched Mode Power Supply Induction Heating     Features Benefits Low VCE(ON) and Switching Losses High Efficiency in a Wide Range of Applications 100% RBSOA Tested Rugged Transient Performance POWIR 62™ Package Industry Standard Lead Free RoHS Compliant, Environmental Friendly Base Part Number Package Type Standard Pack Quantity Orderable Part Number IRG7U100HF12B POWIR 62™ Box 45 IRG7U100HF12B Absolute Maximum Ratings of IGBT VCES Collector to Emitter Voltage 1200 V VGES Continuous Gate to Emitter Voltage ±20 V IC Continuous Collector Current TC = 80°C 100 A TC = 25°C 200 A ICM Pulse Collector Current TJ = 175°C 200 A PD Maximum Power Dissipation (IGBT) TC = 25°C, TJ = 175°C 580 W TJ Maximum IGBT Junction Temperature 175 °C TJOP Maximum Operating Junction Temperature Range -40 to +150 °C Tstg Storage Temperature -40 to +125 °C 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback September 2, 2014 IRG5K50P5K50PM06E IRG7U100HF12B Electrical Characteristics of IGBT at TJ = 25°C (Unless Otherwise Specified) Parameter Min. V(BR)CES Collector to Emitter Breakdown Voltage VGE(th) Gate Threshold Voltage VCE(ON) Collector to Emitter Saturation Voltage ICES Collector to Emitter Leakage Current IGES Gate to Emitter Leakage Current RGint Internal Gate Resistance Typ. Max. 1200 3.4 Unit Test Conditions V VGE = 0V, IC = 1mA 4.2 4.9 V IC = 4mA, VCE = VGE 1.70 2.00 V TJ = 25°C V TJ = 125°C 1.90 IC = 100A, VGE = 15V 1 mA VGE = 0V, VCE = VCES 400 nA VGE = ±20V, VCE = 0 2.35 Ω Switching Characteristics of IGBT Parameter Min. Typ. 950 td(on) Turn-on Delay Time tr Rise Time td(off) Turn-off Delay Time tf Fall Time Eon Turn-on Switching Loss Eoff Turn-off Switching Loss Qg Total Gate Charge 1100 Cies Input Capacitance 12.5 Coes Output Capacitance 0.46 Cres Reverse Transfer Capacitance 0.31 RBSOA 2 Reverse Bias Safe Operating Area www.irf.com © 2014 International Rectifier 850 130 140 830 900 120 150 9.5 11.5 7.6 10.0 Trapezoid Max. Unit ns ns ns ns mJ mJ nC nF Test Conditions TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C VCC=600V, IC = 100A, RG = 15Ω, VGE=±15V, Inductive Load TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C VCE = 25V, VGE = 0V, f ＝1MHz, TJ = 25°C IC = 200A,VCC = 960V, VP =1200V, RG = 15Ω, VGE = +15V to 0V, TJ = 150°C Submit Datasheet Feedback September 2, 2014 IRG5K50P5K50PM06E IRG7U100HF12B Absolute Maximum Ratings of Freewheeling Diode VRRM IF IFM Repetitive Peak Reverse Voltage 1200 Diode Continuous Forward Current, TC = 25°C 200 Diode Continuous Forward Current, TC = 80°C 100 Pulse Diode Current 200 V A A Electrical and Switching Characteristics of Freewheeling Diode Parameter VF Forward Voltage Irr Peak Reverse Recovery Current Qrr Reverse Recovery Charge Erec Reverse Recovery Energy Typ. Max. 2.20 2.70 2.40 40 55 4.7 10.6 1.5 3.9 Unit V A µC mJ Test Conditions TJ = 25°C TJ = 125°C IF = 100A , VGE = 0V TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C IF＝100A, di/dt=660A/μs, Vrr = 600V, VGE = -15V TJ = 125°C Module Characteristics Parameter Min. Typ. Max. Unit 2500 V Viso Isolation Voltage (All Terminals Shorted), f = 50Hz, 1minute RθJC Junction-to-Case (IGBT) 0.26 °C/W RθJC Junction-to-Case (Diode) 0.41 °C/W RθCS Case-To-Sink (Conductive Grease Applied) 0.1 °C/W M Power Terminals Screw: M6 3.0 5.0 N·m M Mounting Screw: M6 4.0 6.0 N·m G Weight 3 www.irf.com © 2014 International Rectifier 230 Submit Datasheet Feedback g September 2, 2014 IRG5K50P5K50PM06E IRG7U100HF12B 200 200 180 160 140 IC (A) 120 IC (A) 100 80 120 VGE =13V VGE =11V 100 VGE=9V 80 60 60 40 40 20 20 0 0 0.4 VGE =17V VGE =15V 160 TJ =125°C 140 TJ =125°C 180 VGE =15V TJ =25°C 0.8 1.2 1.6 VCE (V) 2.0 2.4 0 2.8 0 0.4 0.8 1.2 1.6 VCE (V) 2.0 2.4 Fig.1 Typical IGBT Saturation Characteristics Fig.2 Typical IGBT Output Characteristics 200 24 22 VGE =0V TJ =125°C 180 160 18 C (nF) 14 IF (A) 100 80 10 6 40 4 20 2 0 0.0 0.4 0.8 1.2 1.6 2.0 VF(V) 2.4 2.8 3.2 0 3.6 0 5 10 15 20 25 VCE (V) Fig.3 Typical Freewheeling Diode Characteristics Fig. 4 Typical Capacitance Characteristics 30 30 VCC=600V,VGE=+/-15V, Rg=15 ohm,TJ =125°C 25 E (mJ) 15 Erec 15 10 10 5 5 20 40 Eon Eoff 20 Erec 0 VCC=600V,VGE =+/-15V, IC=100A,TJ =125°C 25 Eon Eoff 20 E (mJ) 12 8 60 60 80 100 120 IC (A) 140 160 180 200 Fig.5 Typical Switching Loss vs. Collector Current 4 Coes 16 120 0 VGE = 0V,f =1 MHz Cies 20 TJ =25°C 140 2.8 www.irf.com © 2014 International Rectifier 0 0 5 10 15 20 Rg () 25 30 35 40 Fig.6 Typical Switching Loss vs. Gate Resistance Submit Datasheet Feedback September 2, 2014 IRG5K50P5K50PM06E IRG7U100HF12B 200 Duty Cycle:50% TJ =150°C 180 160 TC =80°C 140 Rg =15 ohm,VGE =15V 120 150 Square Wave: 100 IC (A) Load Current (A) 200 Vcc 100 80 I 60 50 40 Module Chip Diode as specified 20 0 1 10 Frequency (KHz) 0 100 Fig.7 Typical Load Current vs. Frequency 0 200 400 600 800 VCES (V) 1000 1200 Fig.8 Reverse Bias Safe Operation Area (RBSOA) 0.3 0.5 ZthJC:IGBT ZthJC:Diode 0.4 ZthJC (K/W) 0.2 ZthJC (K/W) 0.3 0.2 0.1 0.1 0.0 0.001 0.01 0.1 1 2 t (s) 0.0 0.001 0.01 t (s) 0.1 1 2 Fig.9 Typical Transient Thermal Impedance (IGBT) Fig.10 Typical Transient Thermal Impedance (Diode) 5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback September 2, 2014 IRG5K50P5K50PM06E IRG7U100HF12B Internal Circuit: Package Outline (Unit: mm): Qualification Information† Qualification Level Industrial Moisture Sensitivity Level Yes RoHS Compliant † Not Applicable Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ IR WORLD HEADQUARTERS: 101 North Sepulveda Blvd, El Segundo, California, 90245, USA To contact International Rectifier, please visit: http://www.irf.com/whoto-call/ 6 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback September 2, 2014