IRG7U150HF12B

IRG5K50P5K50PM06E IRG7U150HF12B IGBT Half-Bridge POWIR 62™ Package VCES = 1200V IC = 150A at TC = 80°C VCE(ON) = 1.70V at IC = 150A Applications：  Industrial Motor Drive Uninterruptible Power Supply Welding and Cutting Machine Switched Mode Power Supply Induction Heating     Features Benefits Low VCE(ON) and Switching Losses High Efficiency in a Wide Range of Applications 100% RBSOA Tested Rugged Transient Performance POWIR 62™ Package Industry Standard Lead Free RoHS Compliant, Environmental Friendly Base Part Number Package Type Standard Pack Quantity Orderable Part Number IRG7U150HF12B POWIR 62™ Box 45 IRG7U150HF12B Absolute Maximum Ratings of IGBT VCES Collector to Emitter Voltage 1200 V VGES Continuous Gate to Emitter Voltage ±20 V IC Continuous Collector Current TC = 80°C 150 A TC = 25°C 300 A ICM Pulse Collector Current TJ = 175°C 300 A PD Maximum Power Dissipation (IGBT) TC = 25°C, TJ = 175°C 900 W TJ Maximum IGBT Junction Temperature 175 °C TJOP Maximum Operating Junction Temperature Range -40 to +150 °C Tstg Storage Temperature -40 to +125 °C 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback June 6, 2014 IRG5K50P5K50PM06E IRG7U150HF12B Electrical Characteristics of IGBT at TJ = 25°C (Unless Otherwise Specified) Parameter Min. V(BR)CES Collector to Emitter Breakdown Voltage VGE(th) Gate Threshold Voltage VCE(ON) Collector to Emitter Saturation Voltage ICES Collector to Emitter Leakage Current IGES Gate to Emitter Leakage Current RGint Internal Gate Resistance Typ. Max. 1200 3.4 Unit Test Conditions V VGE = 0V, IC = 1mA 4.2 4.9 V IC = 1 mA, VCE = VGE 1.70 2.00 V TJ = 25°C V TJ = 125°C 1.90 IC = 150A, VGE = 15V 1 mA VGE = 0V, VCE = VCES 200 nA VGE = ±20V, VCE = 0 1.25 Ω Switching Characteristics of IGBT Parameter Min. Typ. 850 td(on) Turn-on Delay Time tr Rise Time td(off) Turn-off Delay Time tf Fall Time Eon Turn-on Switching Loss Eoff Turn-off Switching Loss Qg Total Gate Charge 1650 Cies Input Capacitance 14.0 Coes Output Capacitance 1.00 Cres Reverse Transfer Capacitance 0.76 RBSOA 2 Reverse Bias Safe Operating Area www.irf.com © 2014 International Rectifier Max. Unit ns 850 170 ns 170 825 ns 890 165 ns 195 13.7 mJ 15.7 8.7 mJ 12.0 nC nF Trapezoid Test Conditions TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C VCC=600V, IC = 150A, RG = 15Ω, VGE=±15V, Inductive Load TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C VCE = 25V, VGE = 0V, f ＝1MHz, TJ = 25°C IC = 300A,VCC = 960V, VP =1200V, RG = 15Ω, VGE = +15V to 0V, TJ = 150°C Submit Datasheet Feedback June 6, 2014 IRG5K50P5K50PM06E IRG7U150HF12B Absolute Maximum Ratings of Freewheeling Diode VRRM IF IFM Repetitive Peak Reverse Voltage 1200 Diode Continuous Forward Current, TC = 25°C 300 Diode Continuous Forward Current, TC = 80°C 150 Pulse Diode Current 300 V A A Electrical and Switching Characteristics of Freewheeling Diode Parameter VF Forward Voltage Irr Peak Reverse Recovery Current Qrr Reverse Recovery Charge Erec Reverse Recovery Energy Typ. Max. 2.20 2.70 2.40 60 90 7.2 15.0 2.6 5.9 Unit V A µC mJ Test Conditions TJ = 25°C TJ = 125°C IF = 150A , VGE = 0V TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C IF＝150A, di/dt=970A/μs, Vrr = 600V, VGE = -15V TJ = 125°C Module Characteristics Parameter Min. Typ. Max. Unit 2500 V Viso Isolation Voltage (All Terminals Shorted), f = 50Hz, 1minute RθJC Junction-to-Case (IGBT) 0.165 °C/W RθJC Junction-to-Case (Diode) 0.282 °C/W RθCS Case-To-Sink (Conductive Grease Applied) 0.1 °C/W M Power Terminals Screw: M6 3.0 5.0 N·m M Mounting Screw: M6 4.0 6.0 N·m G Weight 3 www.irf.com © 2014 International Rectifier 230 Submit Datasheet Feedback g June 6, 2014 IRG5K50P5K50PM06E IRG7U150HF12B 300 300 270 270 VGE =15V TJ =125°C 240 TJ =25°C 210 TJ =125°C VGE =17V VGE =15V 240 210 VGE =13V VGE =11V 150 150 VGE =9V IC (A) 180 IC (A) 180 120 120 90 90 60 60 30 30 0 0.0 0.4 0.8 1.2 1.6 VCE (V) 2.0 2.4 2.8 0 0.0 3.2 Fig.1 Typical IGBT Saturation Characteristics 0.4 0.8 1.2 1.6 VCE (V) 2.0 2.4 2.8 Fig.2 Typical IGBT Output Characteristics 300 30 270 VGE =0V TJ =125°C 240 TJ =25°C 210 VGE = 0V,f =1 MHz Cies 25 Coes 20 IF (A) C (nF) 180 150 15 120 10 90 60 5 30 0 0.0 0.4 0.8 1.2 1.6 2.0 VF (V) 2.4 2.8 3.2 0 3.6 5 10 15 20 25 VCE (V) Fig.3 Typical Freewheeling Diode Characteristics Fig. 4 Typical Capacitance Characteristics 35 40 VCC =600V,VGE =+/-15V, Rg =15 ohm,TJ =125°C 30 Eoff Eon 30 25 E (mJ) Erec 20 VCC =600V,VGE =+/-15V, IC =150A,TJ =125°C 35 Eoff Eon 25 E (mJ) 0 15 Erec 20 15 10 10 5 0 5 0 30 60 90 120 150 180 IC (A) 210 240 270 300 Fig.5 Typical Switching Loss vs. Collector Current 4 www.irf.com © 2014 International Rectifier 0 0 5 10 15 20 25 30 Rg () 35 40 45 50 Fig.6 Typical Switching Loss vs. Gate Resistance Submit Datasheet Feedback June 6, 2014 IRG5K50P5K50PM06E IRG7U150HF12B 300 Duty Cycle:50% TJ =150°C 300 240 210 TC =80°C 250 Rg =15 ohm,VGE =15V 180 200 Square Wave: 150 IC (A) Load Current (A) 270 Vcc 120 I 90 100 60 0 1 10 Frequency (KHz) 0 100 0 200 400 600 800 VCES (V) 1000 1200 Fig.8 Reverse Bias Safe Operation Area (RBSOA) Fig.7 Typical Load Current vs. Frequency 0.18 0.16 Module Chip 50 Diode as specified 30 150 0.35 ZthJC:IGBT ZthJC:Diode 0.30 0.14 0.25 ZthJC (K/W) ZthJC (K/W) 0.12 0.20 0.10 0.08 0.15 0.06 0.10 0.04 0.05 0.02 0.00 0.001 0.01 t (s) 0.1 1 2 0.00 0.001 0.01 0.1 1 2 t (s) Fig.9 Typical Transient Thermal Impedance (IGBT) Fig.10 Typical Transient Thermal Impedance (Diode) 5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback June 6, 2014 IRG5K50P5K50PM06E IRG7U150HF12B Internal Circuit: Package Outline (Unit: mm): Qualification Information† Qualification Level Industrial Moisture Sensitivity Level Yes RoHS Compliant † Not Applicable Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ IR WORLD HEADQUARTERS: 101 North Sepulveda Blvd, El Segundo, California, 90245, USA To contact International Rectifier, please visit: http://www.irf.com/whoto-call/ 6 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback June 6, 2014