IRG7U200HF12B

IRG5K50P5K50PM06E IRG7U200HF12B IGBT Half-Bridge POWIR 62™ Package VCES = 1200V IC = 200A at TC = 80°C VCE(ON) = 1.70V at IC = 200A Applications：  Industrial Motor Drive Uninterruptible Power Supply Welding and Cutting Machine Switched Mode Power Supply Induction Heating     Features Benefits Low VCE(ON) and Switching Losses High Efficiency in a Wide Range of Applications 100% RBSOA Tested Rugged Transient Performance POWIR 62™ Package Industry Standard Lead Free RoHS Compliant, Environmental Friendly Base Part Number Package Type Standard Pack Quantity Orderable Part Number IRG7U200HF12B POWIR 62™ Box 45 IRG7U200HF12B Absolute Maximum Ratings of IGBT VCES Collector to Emitter Voltage 1200 V VGES Continuous Gate to Emitter Voltage ±20 V IC Continuous Collector Current TC = 80°C 200 A TC = 25°C 400 A ICM Pulse Collector Current TJ = 175°C 400 A PD Maximum Power Dissipation (IGBT) TC = 25°C, TJ = 175°C 1130 W TJ Maximum IGBT Junction Temperature 175 °C TJOP Maximum Operating Junction Temperature Range -40 to +150 °C Tstg Storage Temperature -40 to +125 °C 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback September 2, 2014 IRG5K50P5K50PM06E IRG7U200HF12B Electrical Characteristics of IGBT at TJ = 25°C (Unless Otherwise Specified) Parameter Min. V(BR)CES Collector to Emitter Breakdown Voltage VGE(th) Gate Threshold Voltage VCE(ON) Collector to Emitter Saturation Voltage ICES Collector to Emitter Leakage Current IGES Gate to Emitter Leakage Current RGint Internal Gate Resistance Typ. Max. 1200 3.4 Unit Test Conditions V VGE = 0V, IC = 2mA 4.2 4.9 V IC = 10mA, VCE = VGE 1.70 2.00 V TJ = 25°C V TJ = 125°C 1.90 IC = 200A, VGE = 15V 2 mA VGE = 0V, VCE = VCES 400 nA VGE = ±20V, VCE = 0V 1.25 Ω Switching Characteristics of IGBT Parameter Min. Typ. 1100 td(on) Turn-on Delay Time tr Rise Time td(off) Turn-off Delay Time tf Fall Time Eon Turn-on Switching Loss Eoff Turn-off Switching Loss Qg Total Gate Charge 2100 Cies Input Capacitance 20.0 Coes Output Capacitance 1.08 Cres Reverse Transfer Capacitance 0.75 RBSOA 2 Reverse Bias Safe Operating Area www.irf.com © 2014 International Rectifier 1080 200 205 900 950 110 140 19.0 22.9 15.2 19.8 Trapezoid Max. Unit ns ns ns ns mJ mJ nC nF Test Conditions TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C VCC=600V, IC = 200A, RG = 15Ω, VGE=±15V, Inductive Load TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C VCE = 25V, VGE = 0V, f ＝1MHz, TJ = 25°C IC = 400A,VCC = 960V, VP =1200V, RG = 15Ω, VGE = +15V to 0V, TJ = 150°C Submit Datasheet Feedback September 2, 2014 IRG5K50P5K50PM06E IRG7U200HF12B Absolute Maximum Ratings of Freewheeling Diode VRRM IF IFM Repetitive Peak Reverse Voltage 1200 Diode Continuous Forward Current, TC = 25°C 400 Diode Continuous Forward Current, TC = 80°C 200 Pulse Diode Current 400 V A A Electrical and Switching Characteristics of Freewheeling Diode Parameter VF Forward Voltage Irr Peak Reverse Recovery Current Qrr Reverse Recovery Charge Erec Reverse Recovery Energy Typ. Max. 2.00 2.70 2.20 65 105 9.65 21.80 3.20 8.40 Unit V A µC mJ Test Conditions TJ = 25°C TJ = 125°C IF = 200A , VGE = 0V TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C IF＝200A, di/dt=960A/μs, Vrr = 600V, VGE = -15V TJ = 125°C Module Characteristics Parameter Min. Typ. Max. Unit 2500 V Viso Isolation Voltage (All Terminals Shorted), f = 50Hz, 1minute RθJC Junction-to-Case (IGBT) 0.132 °C/W RθJC Junction-to-Case (Diode) 0.204 °C/W RθCS Case-To-Sink (Conductive Grease Applied) 0.1 °C/W M Power Terminals Screw: M6 3.0 5.0 N·m M Mounting Screw: M6 4.0 6.0 N·m G Weight 3 www.irf.com © 2014 International Rectifier 230 Submit Datasheet Feedback g September 2, 2014 IRG5K50P5K50PM06E IRG7U200HF12B 400 400 360 320 200 200 IC (A) 240 160 120 80 80 40 40 0.8 1.2 1.6 VCE (V) 2.0 2.4 2.8 VGE =9V 0 0.0 3.2 Fig.1 Typical IGBT Saturation Characteristics 0.6 1.2 VCE (V) 1.8 2.4 3.0 Fig.2 Typical IGBT Output Characteristics 50 400 360 VGE =0V TJ =125°C 320 VCE= 0 V,f=1MHz Cies 40 Coes TJ =25°C 280 30 C (nF) 240 IF (A) VGE =13V VGE =11V 160 120 0.4 VGE =17V VGE =15V 280 240 0 0.0 TJ =125°C 320 TJ =25°C 280 IC (A) 360 VGE =15V TJ =125°C 200 20 160 120 10 80 40 0 0.0 0.4 0.8 1.2 1.6 2.0 VF (V) 2.4 2.8 3.2 0 3.6 15 20 25 60 VCC =600V,VGE =+/-15V, Rg =15 ohm,TJ =125°C 50 E (mJ) 30 Erec 30 20 20 10 10 40 80 Eoff Eon 40 Erec 0 VCC =600V,VGE =+/-15V, IC =200A,TJ =125°C 50 Eoff Eon 40 E (mJ) 10 Fig. 4 Typical Capacitance Characteristics 60 120 160 200 240 IC (A) 280 320 360 400 Fig.5 Typical Switching Loss vs. Collector Current 4 5 VCE (V) Fig.3 Typical Freewheeling Diode Characteristics 0 0 www.irf.com © 2014 International Rectifier 0 0 5 10 15 20 Rg () 25 30 35 40 Fig.6 Typical Switching Loss vs. Gate Resistance Submit Datasheet Feedback September 2, 2014 IRG5K50P5K50PM06E IRG7U200HF12B 400 320 Duty Cycle:50% TJ =150°C 280 TC =80°C 400 300 Rg =15 ohm,VGE =15V 240 IC (A) Load Current (A) 360 Square Wave: 200 200 Vcc 160 120 I 100 80 40 0 Module Chip Diode as specified 1 10 Frequency (KHz) Fig.7 Typical Load Current vs. Frequency 200 400 600 800 VCES (V) 1000 1200 0.25 ZthJC:Diode ZthJC:IGBT 0.20 0.15 ZthJC (K/W) ZthJC (K/W) 0.09 0.06 0.10 0.03 0.00 0.001 0 Fig.8 Reverse Bias Safe Operation Area (RBSOA) 0.15 0.12 0 100 0.05 0.01 t (s) 0.1 1 2 0.00 0.001 0.01 0.1 1 2 t (s) Fig.9 Typical Transient Thermal Impedance (IGBT) Fig.10 Typical Transient Thermal Impedance (Diode) 5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback September 2, 2014 IRG5K50P5K50PM06E IRG7U200HF12B Internal Circuit: Package Outline (Unit: mm): Qualification Information† Qualification Level Industrial Moisture Sensitivity Level Yes RoHS Compliant † Not Applicable Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ IR WORLD HEADQUARTERS: 101 North Sepulveda Blvd, El Segundo, California, 90245, USA To contact International Rectifier, please visit: http://www.irf.com/whoto-call/ 6 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback September 2, 2014