IRG7U50HF12A

IRG5K50P5K50PM06E IRG7U50HF12A IGBT Half-Bridge POWIR 34™ Package VCES = 1200V IC = 50A at TC = 80⁰C VCE(ON) = 1.70V at IC = 50A Applications：  Industrial Motor Drive Uninterruptible Power Supply Welding and Cutting Machine Switched Mode Power Supply Induction Heating AC Inverter Drive      Features Benefits Low VCE(ON) and Switching Losses High Efficiency in a Wide Range of Applications 100% RBSOA Tested Rugged Transient Performance POWIR 34™ Package Industry Standard Lead Free RoHS Compliant, Environmental Friendly Base Part Number Package Type Standard Pack Quantity Orderable Part Number IRG7U50HF12A POWIR 34™ Box 80 IRG7U50HF12A Absolute Maximum Ratings of IGBT VCES Collector to Emitter Voltage 1200 V VGES Continuous Gate to Emitter Voltage ±20 V IC Continuous Collector Current TC = 80°C 50 A TC = 25°C 100 A ICM Pulse Collector Current TJ = 175°C 100 A PD Maximum Power Dissipation (IGBT) TC = 25°C, TJ = 175°C 310 W TJ Maximum IGBT Junction Temperature 175 °C TJOP Maximum Operating Junction Temperature Range -40 to +150 °C Tstg Storage Temperature -40 to +125 °C 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 1, 2014 IRG5K50P5K50PM06E IRG7U50HF12A Electrical Characteristics of IGBT at TJ = 25°C (Unless Otherwise Specified) Parameter Min. V(BR)CES Collector to Emitter Breakdown Voltage VGE(th) Gate Threshold Voltage VCE(ON) Collector to Emitter Saturation Voltage ICES Collector to Emitter Leakage Current IGES Gate to Emitter Leakage Current Typ. Max. 1200 3.4 Unit Test Conditions V VGE = 0V, IC = 1mA 4.2 4.9 V IC = 2mA, VCE = VGE 1.70 2.00 V TJ = 25°C V TJ = 125°C 1.90 IC = 50A, VGE = 15V 1 mA VGE = 0V, VCE = VCES 400 nA VGE = ±20V, VCE = 0V Max. Unit Switching Characteristics of IGBT Parameter Min. Typ. 495 td(on) Turn-on Delay Time tr Rise Time td(off) Turn-off Delay Time tf Fall Time Eon Turn-on Switching Loss Eoff Turn-off Switching Loss Qg Total Gate Charge 450 Cies Input Capacitance 6.0 Coes Output Capacitance 0.19 Cres Reverse Transfer Capacitance 0.13 RBSOA 2 Reverse Bias Safe Operating Area www.irf.com © 2014 International Rectifier 495 90 ns ns 85 475 500 170 260 4.9 5.8 1.7 2.5 Trapezoid ns ns mJ mJ nC nF Test Conditions TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C VCC=600V, IC = 50A, RG = 40Ω, VGE=±15V, Inductive Load TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C VCE = 25V, VGE = 0V, f ＝1MHz, TJ = 25°C IC = 100A,VCC = 960V, VP = 1200V, RG = 15Ω, VGE = +15V to 0V, TJ = 150°C Submit Datasheet Feedback October 1, 2014 IRG5K50P5K50PM06E IRG7U50HF12A Absolute Maximum Ratings of Freewheeling Diode VRRM IF IFM Repetitive Peak Reverse Voltage 1200 Diode Continuous Forward Current, TC = 25°C 100 Diode Continuous Forward Current, TC = 80°C 50 Pulse Diode Current 100 V A A Electrical and Switching Characteristics of Freewheeling Diode Parameter VF Forward Voltage Irr Peak Reverse Recovery Current Qrr Reverse Recovery Charge Erec Reverse Recovery Energy Typ. Max. 2.00 2.70 2.20 25 Unit V A 30 3.6 µC 5.9 1.00 mJ 2.15 Test Conditions TJ = 25°C TJ = 125°C IF = 50A , VGE = 0V TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C IF＝50A, di/dt=660A/μs, Vrr = 600V, VGE = -15V TJ = 125°C Module Characteristics Parameter Min. Typ. Max. Unit 2500 V Viso Isolation Voltage (All Terminals Shorted), f = 50Hz, 1minute RθJC Junction-to-Case (IGBT) 0.48 °C/W RθJC Junction-to-Case (Diode) 0.87 °C/W RθCS Case-To-Sink (Conductive Grease Applied) 0.1 °C/W M Power Terminals Screw: M5 3.0 5.0 N·m M Mounting Screw: M6 4.0 6.0 N·m G Weight 3 www.irf.com © 2014 International Rectifier 165 g Submit Datasheet Feedback October 1, 2014 IRG5K50P5K50PM06E IRG7U50HF12A 100 100 VGE =15V TJ =125°C 90 70 70 60 60 VGE =13V VGE =11V 50 50 VGE =9V 40 40 30 30 20 20 10 10 0 0.0 0.4 0.8 1.2 1.6 VCE (V) 2.0 2.4 0 0.0 2.8 Fig.1 Typical IGBT Saturation Characteristics 0.4 0.8 1.2 1.6 VCE (V) 2.0 2.4 2.8 3.2 Fig.2 Typical IGBT Output Characteristics 100 10 VGE =0V TJ =125°C 90 80 VGE = 0V,f =1 MHz Cies 8 Coes TJ =25°C 70 6 C (nF) 60 IF (A) VGE =17V VGE =15V 80 TJ =25°C IC (A) IC (A) 80 TJ =125°C 90 50 40 4 30 20 2 10 0 0.0 0.4 0.8 1.2 1.6 VF (V) 2.0 2.4 2.8 0 3.2 Fig.3 Typical Diode Forward Characteristics 5 10 VCE (V) 15 20 25 Fig. 4 Typical Capacitance Characteristics 12 8 VCC=600V,VGE=+/-15V, IC=50A,TJ =125°C VCC =600V,VGE =+/-15V, Rg =40 ohm,TJ =125°C 10 Eoff Eon 8 Eoff Eon 6 Erec E (mJ) Erec E (mJ) 0 6 4 4 2 2 0 0 10 20 30 40 50 60 IC (A) 70 80 90 100 Fig.5 Typical Switching Loss vs. Collector Current 4 www.irf.com © 2014 International Rectifier 0 0 5 10 15 20 Rg () 25 30 35 40 Fig.6 Typical Switching Loss vs. Gate Resistance Submit Datasheet Feedback October 1, 2014 IRG5K50P5K50PM06E IRG7U50HF12A 100 80 TC =80°C 70 Load Current (A) 100 Duty Cycle:50% TJ =125°C 90 80 Rg =40 ohm,VGE =15V 60 IC (A) Square Wave: 50 Vcc 40 40 I 30 60 20 20 Diode as specified Module Chip 10 0 1 10 Frequency (KHz) 0 100 Fig.7 Typical Load Current vs. Frequency 400 600 800 VCES (V) 1000 1200 1.2 ZthJC:IGBT 1.0 ZthJC:Diode 0.8 ZthJC (K/W) ZthJC (K/W) 0.4 0.3 0.6 0.2 0.4 0.1 0.2 0.0 0.001 200 Fig.8 Reverse Bias Safe Operation Area (RBSOA) 0.6 0.5 0 0.01 t (s) 0.1 1 2 0.0 0.001 0.01 t (s) 0.1 1 2 Fig.9 Typical Transient Thermal Impedance (IGBT) Fig.10 Typical Transient Thermal Impedance (Diode) 5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 1, 2014 IRG5K50P5K50PM06E IRG7U50HF12A Internal Circuit: Package Outline (Unit: mm): Qualification Information† Qualification Level Industrial Moisture Sensitivity Level Yes RoHS Compliant † Not Applicable Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ IR WORLD HEADQUARTERS: 101 North Sepulveda Blvd, El Segundo, California, 90245, USA To contact International Rectifier, please visit: http://www.irf.com/whoto-call/ 6 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 1, 2014