IRG7U75HF12A

IRG5K50P5K50PM06E IRG7U75HF12A IGBT Half-Bridge POWIR 34™ Package VCES = 1200V IC = 75A at TC = 80⁰C VCE(ON) = 1.70V at IC = 75A Applications：  Industrial Motor Drive Uninterruptible Power Supply Welding and Cutting Machine Switched Mode Power Supply Induction Heating AC Inverter Drive      Features Benefits Low VCE(ON) and Switching Losses High Efficiency in a Wide Range of Applications 100% RBSOA Tested Rugged Transient Performance POWIR 34™ Package Industry Standard Lead Free RoHS Compliant, Environmental Friendly Base Part Number Package Type Standard Pack Quantity Orderable Part Number IRG7U75HF12A POWIR 34™ Box 80 IRG7U75HF12A Absolute Maximum Ratings of IGBT VCES Collector to Emitter Voltage 1200 V VGES Continuous Gate to Emitter Voltage ±20 V IC Continuous Collector Current TC = 80°C 75 A TC = 25°C 150 A ICM Pulse Collector Current TJ = 175°C 150 A PD Maximum Power Dissipation (IGBT) TC = 25°C, TJ = 175°C 450 W TJ Maximum IGBT Junction Temperature 175 °C TJOP Maximum Operating Junction Temperature Range -40 to +150 °C Tstg Storage Temperature -40 to +125 °C 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 1, 2014 IRG5K50P5K50PM06E IRG7U75HF12A Electrical Characteristics of IGBT at TJ = 25°C (Unless Otherwise Specified) Parameter Min. V(BR)CES Collector to Emitter Breakdown Voltage VGE(th) Gate Threshold Voltage VCE(ON) Collector to Emitter Saturation Voltage ICES Collector to Emitter Leakage Current IGES Gate to Emitter Leakage Current RGint Internal Gate Resistance Typ. Max. 1200 3.4 Unit Test Conditions V VGE = 0V, IC = 1mA 4.2 4.9 V IC = 3.5mA, VCE = VGE 1.70 2.00 V TJ = 25°C V TJ = 125°C 1.90 IC = 75A, VGE = 15V 1 mA VGE = 0V, VCE = VCES 400 nA VGE = ±20V, VCE = 0V 2.5 Ω Switching Characteristics of IGBT Parameter Min. Typ. 960 td(on) Turn-on Delay Time tr Rise Time td(off) Turn-off Delay Time tf Fall Time Eon Turn-on Switching Loss Eoff Turn-off Switching Loss Qg Total Gate Charge 800 Cies Input Capacitance 7.0 Coes Output Capacitance 0.44 Cres Reverse Transfer Capacitance 0.33 RBSOA 2 Reverse Bias Safe Operating Area www.irf.com © 2014 International Rectifier 920 125 130 775 805 200 270 8..4 10.1 3.9 5.4 Trapezoid Max. Unit ns ns ns ns mJ mJ nC nF Test Conditions TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C VCC=600V, IC = 75A, RG = 40Ω, VGE=±15V, Inductive Load TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C VCE = 25V, VGE = 0V, f ＝1MHz, TJ = 25°C IC = 150A,VCC = 960V, VP = 1200V, RG = 15Ω, VGE = +15V to 0V, TJ = 150°C Submit Datasheet Feedback October 1, 2014 IRG5K50P5K50PM06E IRG7U75HF12A Absolute Maximum Ratings of Freewheeling Diode VRRM IF IFM Repetitive Peak Reverse Voltage 1200 Diode Continuous Forward Current, TC = 25°C 150 Diode Continuous Forward Current, TC = 80°C 75 Pulse Diode Current 150 V A A Electrical and Switching Characteristics of Freewheeling Diode Parameter VF Forward Voltage Irr Peak Reverse Recovery Current Qrr Reverse Recovery Charge Erec Reverse Recovery Energy Typ. Max. 2.20 2.70 2.40 30 Unit V A 40 3.6 µC 7.3 1.3 mJ 2.8 Test Conditions TJ = 25°C TJ = 125°C IF = 75A , VGE = 0V TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C IF＝75A, di/dt=600A/μs, Vrr = 600V, VGE = -15V TJ = 125°C Module Characteristics Parameter Min. Typ. Max. Unit 2500 V Viso Isolation Voltage (All Terminals Shorted), f = 50Hz, 1minute RθJC Junction-to-Case (IGBT) 0.33 °C/W RθJC Junction-to-Case (Diode) 0.56 °C/W RθCS Case-To-Sink (Conductive Grease Applied) 0.1 °C/W M Power Terminals Screw: M5 3.0 5.0 N·m M Mounting Screw: M6 4.0 6.0 N·m G Weight 3 www.irf.com © 2014 International Rectifier 165 Submit Datasheet Feedback g October 1, 2014 IRG5K50P5K50PM06E IRG7U75HF12A 150 150 VGE =15V TJ =125°C 135 120 TJ =125°C 135 VGE =17V VGE =15V 120 TJ =25°C 90 VGE =13V VGE =11V 75 75 VGE =9V IC (A) 105 90 IC (A) 105 60 60 45 45 30 30 15 15 0 0.0 0.4 0.8 1.2 1.6 VCE (V) 2.0 2.4 2.8 0 0.0 3.2 Fig.1 Typical IGBT Saturation Characteristics 0.8 1.2 1.6 VCE (V) 2.0 2.4 2.8 3.2 Fig.2 Typical IGBT Output Characteristics 15 150 VGE =0V TJ =125°C 135 120 VGE = 0V,f =1 MHz Cies 12 Coes TJ =25°C 105 9 C (nF) 90 IF (A) 0.4 75 6 60 45 3 30 15 0 0.0 0.4 0.8 1.2 1.6 2.0 VF (V) 2.4 2.8 3.2 0 3.6 Fig.3 Typical Diode Forward Characteristics 5 10 VCE (V) 15 20 25 Fig. 4 Typical Capacitance Characteristics 20 12 VCC =600V,VGE =+/-15V, Rg =40 ohm,TJ =125°C 16 14 Eoff Eon 12 Erec VCC=600V,VGE=+/-15V, IC=75A,TJ =125°C 10 Eoff Eon 8 E (mJ) 18 E (mJ) 0 10 Erec 6 8 4 6 4 2 2 0 0 15 30 45 60 75 90 IC (A) 105 120 135 150 Fig.5 Typical Switching Loss vs. Collector Current 4 www.irf.com © 2014 International Rectifier 0 5 10 15 20 25 30 35 40 Rg () Fig.6 Typical Switching Loss vs. Gate Resistance Submit Datasheet Feedback October 1, 2014 IRG5K50P5K50PM06E IRG7U75HF12A 150 120 TC =80°C 105 Load Current (A) 150 Duty Cycle:50% TJ =125°C 135 120 Rg =40 ohm,VGE =15V 90 IC (A) Square Wave: 75 Vcc 60 60 I 45 90 30 30 Diode as specified Module Chip 15 0 1 10 Frequency (KHz) 0 100 Fig.7 Typical Load Current vs. Frequency 400 600 800 VCES (V) 1000 1200 0.8 ZthJC:Diode ZthJC:IGBT ZthJC (K/W) 0.6 ZthJC (K/W) 0.3 0.2 0.4 0.2 0.1 0.0 0.001 200 Fig.8 Reverse Bias Safe Operation Area (RBSOA) 0.5 0.4 0 0.01 t (s) 0.1 1 2 0.0 0.001 0.01 t (s) 0.1 1 2 Fig.9 Typical Transient Thermal Impedance (IGBT) Fig.10 Typical Transient Thermal Impedance (Diode) 5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 1, 2014 IRG5K50P5K50PM06E IRG7U75HF12A Internal Circuit: Package Outline (Unit: mm): Qualification Information† Qualification Level Industrial Moisture Sensitivity Level Yes RoHS Compliant † Not Applicable Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ IR WORLD HEADQUARTERS: 101 North Sepulveda Blvd, El Segundo, California, 90245, USA To contact International Rectifier, please visit: http://www.irf.com/whoto-call/ 6 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 1, 2014