IRG8P15N120KDPbF
IRG8P15N120KD-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
VCES = 1200V
C
IC = 15A, TC =100°C
tSC 10µs, TJ(max) = 150°C
G
G
VCE(ON) typ. = 1.7V @ IC = 10A
E
n-channel
Applications
E
IRG8P15N120KDPbF
TO‐247AC
G
Gate
• Industrial Motor Drive
• UPS
• Solar Inverters
• Welding
C
G C
IRG8P15N120KD‐EPbF
TO‐247AD
C
Collector
Features
E
E
Emitter
Benefits
Benchmark Low VCE(ON)
High Efficiency in a Motor Drive Applications
10μs Short Circuit SOA
Increases margin for short circuit protection scheme
Positive VCE(ON) Temperature Coefficient
Excellent Current Sharing in Parallel Operation
Square RBSOA and high ILM- rating
Rugged Transient Performance
Lead-Free, RoHS compliant
Environmentally friendly
Base part number
Package Type
IRG8P15N120KDPbF
IRG8P15N120KD-EPbF
TO-247AC
TO-247AD
Standard Pack
Form
Quantity
Tube
25
Tube
25
Orderable Part Number
IRG8P15N120KDPbF
IRG8P15N120KD-EPbF
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current (Silicon Limited)
Continuous Collector Current
Pulse Collector Current (see fig. 2)
Clamped Inductive Load Current (see fig. 3)
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Max.
Units
1200
30
15
30
40
20
11
40
±30
125
50
-40 to +150
V
A
V
W
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
C
Thermal Resistance
RJC (IGBT)
RJC (Diode)
RCS
RJA
1
Parameter
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
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Min.
–––
–––
–––
–––
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Typ.
–––
–––
0.24
40
Max.
1.0
1.7
–––
–––
Units
°C/W
November 4, 2014
IRG8P15N120KDPbF/IRG8P15N120KD-EPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ.
V(BR)CES
Collector-to-Emitter Breakdown Voltage
1200
—
—
1.1
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage
—
1.7
Collector-to-Emitter Saturation Voltage
VCE(on)
—
2.0
Gate Threshold Voltage
5.0
—
VGE(th)
—
-16
VGE(th)/TJ Threshold Voltage Temperature Coeff.
gfe
Forward Transconductance
—
5.7
—
1.0
ICES
Collector-to-Emitter Leakage Current
—
1.0
Gate-to-Emitter Leakage Current
—
—
IGES
—
2.1
Diode Forward Voltage Drop
VF
—
2.4
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Min.
—
—
—
—
—
—
—
—
—
—
—
Max.
—
—
Units
Conditions
V
VGE = 0V, IC = 250µA
V/°C VGE = 0V, IC = 1mA (25°C-150°C)
2.0
V
IC = 10A, VGE = 15V, TJ = 25°C
—
IC = 10A, VGE = 15V, TJ = 150°C
6.5
V
VCE = VGE, IC = 400µA
—
mV/°C VCE = VGE, IC = 400µA (25°C-150°C)
—
S
VCE = 50V, IC = 10A, PW = 20µs
30
µA VGE = 0V, VCE = 1200V
—
mA VGE = 0V, VCE = 1200V, TJ = 150°C
±100
nA VGE = ±30V
2.7
V
IF = 10A
—
IF = 10A, TJ = 150°C
Qg
Qge
Qgc
Eon
Eoff
Etotal
td(on)
tr
td(off)
tf
Eon
Parameter
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Typ. Max Units
Conditions
65
98
IC = 10A
6.0
9.0
nC VGE = 15V
VCC = 600V
40
60
0.6
—
0.6
—
mJ IC = 10A, VCC = 600V, VGE=15V
1.2
—
RG = 10, TJ = 25°C
15
—
Energy losses include tail & diode
20
—
ns reverse recovery
170
—
200
—
0.9
—
Eoff
Etotal
td(on)
tr
td(off)
tf
Cies
Coes
Cres
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RBSOA
Reverse Bias Safe Operating Area
SCSOA
Short Circuit Safe Operating Area
10
—
—
Erec
trr
Irr
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
—
—
—
0.8
60
26
—
—
—
—
—
—
—
—
—
—
—
—
1.1
2.0
15
20
250
330
1290
60
30
—
—
—
—
—
—
—
—
—
FULL SQUARE
mJ
ns
IC = 10A, VCC = 600V, VGE=15V
RG = 10, TJ = 150°C
Energy losses include tail & diode
reverse recovery
VGE = 0V
pF VCC = 30V
f = 1.0Mhz
TJ = 150°C, IC = 40A
VCC = 960V, Vp ≤ 1200V
VGE = +20V to 0V
TJ = 150°C,VCC = 600V, Vp ≤ 1200V
µs V = +15V to 0V
GE
mJ
ns
A
TJ = 150°C
VCC = 600V, IF = 10A
VGE = 15V, Rg = 10
Notes:
VCC = 80% (VCES), VGE = 20V.
R is measured at TJ of approximately 90°C.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Maximum limits are based on statistical sample size characterization.
Pulse width limited by max. junction temperature.
Values influenced by parasitic L and C in measurement.
2
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IRG8P15N120KDPbF/IRG8P15N120KD-EPbF
30
For both:
Duty cycle : 50%
Tj = 150°C
Tcase = 100°C
Gate drive as specified
Power Dissipation = 50W
Load Current ( A )
25
20
15
Square Wave:
VCC
10
I
5
Diode as specified
0
0.1
1
10
100
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
100
IC (A)
100µsec
1
IC (A)
10µsec
10
10
1msec
DC
0.1
Tc = 25°C
Tj = 150°C
Single Pulse
1
0.01
1
10
100
1000
10
10000
100
Fig. 2 - Forward SOA
TC = 25°C; TJ ≤ 150°C; VGE = 15V
Fig. 3 - Reverse Bias SOA
TJ = 150°C; VGE = 20V
100
10
10
ICE (A)
ICE (A)
100
0.1
0.1
0
2
4
6
8
10
V CE (V)
Fig. 4 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 20µs
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Tc = -40°C
Tc = 25°C
Tc = 150°C
1
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
1.0
10000
VCE (V)
VCE (V)
3
1000
© 2014 International Rectifier
0
2
4
6
8
10
V CE (V)
Fig. 5 - Typ. IGBT Saturation Voltage
VGE = 15V; tp = 20µs
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November 4, 2014
IRG8P15N120KDPbF/IRG8P15N120KD-EPbF
100
VGE, Gate-to-Emitter Voltage (V)
16
ICE (A)
10
1
TJ = -40°C
TJ = 25°C
TJ = 150°C
0.1
14
VCES = 600V
VCES = 400V
12
10
8
6
4
2
0
4
6
8
10
12
14
16
0
20
40
60
V GE (V)
Q G, Total Gate Charge (nC)
Fig. 6 - Typ. Transfer Characteristics
VCE = 50V; tp = 20µs
Fig. 7 - Typical Gate Charge vs. VGE
ICE = 10A
2.5
1000
EOFF @ Tj = 150°C
2.0
tdOFF
ERR @ Tj = 150°C
1.5
Swiching Time (ns)
Energy (mJ)
tF
EON @ Tj = 150°C
EOFF @ Tj = 25°C
EON @ Tj = 25°C
ERR @ Tj = 25°C
1.0
100
tR
10
tdON
0.5
1
0.0
2
4
6
8
10
12
14
16
18
0
20
4
8
1000
EON @ Tj = 150°C
tdOFF
1.5
EON @ Tj = 25°C
EOFF @ Tj = 25°C
ERR @ Tj = 25°
Swiching Time (ns)
Energy (mJ)
EOFF @ Tj = 150°C
ERR @ Tj = 150°C
20
Fig. 9 - Typ. Switching Time vs. IC
TJ = 150°C; VCE = 600V, RG = 10; VGE = 15V
Fig. 8 - Typ. Energy Loss vs. IC
VCE = 600V, RG = 10; VGE = 15V
2.0
16
IC (A)
IC (A)
2.5
12
1.0
tF
100
tdON
tR
10
0.5
1
0.0
8
16
24
32
40
48
56
Rg ()
Fig. 10 - Typ. Energy Loss vs. RG
VCE = 600V, ICE = 10A; VGE = 15V
4
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8
16
24
32
40
48
56
RG ( )
Fig. 11 - Typ. Switching Time vs. RG
TJ = 150°C; VCE = 600V, ICE = 10A; VGE = 15V
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IRG8P15N120KDPbF/IRG8P15N120KD-EPbF
1200
30
IRR (A)
26
Tj = 150°C
VGE = 15V
1000
IF = 10A
R G = 10
24
R G =
22
RG = 10
900
800
R G =
20
RG = 10
RG = 22
RG = 47
1100
Energy (µJ)
28
VCC = 600V
700
R G =
600
18
500
16
600
700
800
4
900 1000 1100 1200 1300
8
12
16
20
IF (A)
diF /dt (A/µs)
Fig. 12 - Typ. IRR vs. di/dt
Fig. 13 - Typ. Diode ERR vs. IF
TJ = 150°C
100
10
IF (A)
-40°C
25°C
150°C
1
0.1
0.0
1.0
2.0
3.0
4.0
5.0
6.0
V F (V)
Fig. 14 - Typ. Diode Forward Voltage
Drop Characteristics
5
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IRG8P15N120KDPbF/IRG8P15N120KD-EPbF
10
Thermal Response ( ZthJC )
1
D = 0.50
0.20
0.10
0.05
0.1
J
0.02
0.01
0.01
R1
R1
J
1
R3
R3
R4
R4
C
2
1
3
2
4
3
C
4
Ci= iRi
Ci= iRi
SINGLE PULSE
( THERMAL RESPONSE )
0.001
R2
R2
Ri (°C/W)
i (sec)
0.05998
0.000058
0.30139
0.000138
0.38387
0.002914
0.25341
0.020999
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 15 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
Thermal Response ( ZthJC )
10
1
D = 0.50
0.20
0.10
0.1
0.05
J
0.02
0.01
R1
R1
J
1
R2
R2
R3
R3
R4
R4
C
2
1
2
3
4
3
4
Ci= iRi
Ci= iRi
0.01
1E-005
0.0001
i (sec)
0.04595
0.000029
0.57951
0.000372
0.67140
0.004176
0.40462
0.047311
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
C
Ri (°C/W)
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 16 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
6
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IRG8P15N120KDPbF/IRG8P15N120KD-EPbF
L
L
0
80 V +
VCC
DUT
-
DUT
1K
VCC
Rg
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
diode clamp /
DUT
L
4X
DC
VCC
-5V
DUT /
DRIVER
DUT
VCC
Rg
RSH
Fig.C.T.3 - S.C. SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
(Board Stray Inductance 180nH)
C force
100K
D1
22K
C sense
G force
DUT
0.0075µF
E sense
E force
Fig.C.T.5 - BVCES Filter Circuit
7
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IRG8P15N120KDPbF/IRG8P15N120KD-EPbF
800
80
VCE
70
600
60
500
50
Vce (V)
400
40
ICE
300
30
200
20
100
10
0
Ice (A)
700
0
-100
-10.00
0.00
10.00
-10
20.00
Time (uS)
Fig. WF4 - Typ. S.C. Waveform
@ TJ = 150°C using Fig. CT.3
8
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IRG8P15N120KDPbF/IRG8P15N120KD-EPbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
Notes: This part marking information applies to devices produced after 02/26/2001
EXAMPLE: THIS IS AN IRFPE30
WITH ASSEMBLY
LOT CODE 5657
ASSEMBLED ON WW 35, 2001
IN THE ASSEMBLY LINE "H"
Note: "P" in assembly line position
indicates "Lead-Free"
INTERNATIONAL
RECTIFIER
LOGO
PART NUMBER
IRFPE30
56
135H
57
ASSEMBLY
LOT CODE
DATE CODE
YEAR 1 = 2001
WEEK 35
LINE H
TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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November 4, 2014
IRG8P15N120KDPbF/IRG8P15N120KD-EPbF
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
TO-247AD Part Marking Information
E X A M P L E : T H IS IS A N IR G P 3 0 B 1 2 0 K D - E
W IT H A S S E M B L Y
LO T C O D E 5657
ASSEM B LED O N W W 35, 2000
IN T H E A S S E M B L Y L IN E "H "
N o te : "P " in a s s e m b ly lin e p o s itio n
in d ic a te s "L e a d - F re e "
PART N U M BER
IN T E R N A T IO N A L
R E C T IF IE R
LO G O
56
035H
57
ASSEM B LY
LO T C O D E
D A TE C O D E
YE A R 0 = 2 0 0 0
W EEK 35
L IN E H
TO-247AD package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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IRG8P15N120KDPbF/IRG8P15N120KD-EPbF
Qualification Information†
Industrial†
Qualification Level
Moisture Sensitivity Level
TO-247AC
(per JEDEC JESD47F) ††
N/A
TO-247AD
N/A
Yes
RoHS Compliant
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
††
Applicable version of JEDEC standard at the time of product release.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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November 4, 2014