IRG8P40N120KD-EPBF

IRG8P40N120KDPbF IRG8P40N120KD-EPbF   Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V   C   IC = 40A, TC =100°C tSC 10µs, TJ(max) = 150°C G G VCE(ON) typ. = 1.7V @ IC = 25A E n-channel Applications E G C E IRG8P40N120KDPbF  IRG8P40N120KD‐EPbF  TO‐247AC  TO‐247AD  G Gate • Industrial Motor Drive • UPS • Solar Inverters • Welding C C Collector Features E Emitter Benefits  Benchmark Low VCE(ON) High Efficiency in a Motor Drive Applications 10μs Short Circuit SOA Increases margin for short circuit protection scheme Positive VCE(ON) Temperature Coefficient Excellent Current Sharing in Parallel Operation Square RBSOA and high ILM- rating Rugged Transient Performance Lead-Free, RoHS compliant Environmentally friendly Base part number Package Type IRG8P40N120KDPbF IRG8P40N120KD-EPbF TO-247AC TO-247AD Standard Pack Form Quantity Tube 25 Tube 25 Orderable Part Number IRG8P40N120KDPbF IRG8P40N120KD-EPbF Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current (Silicon Limited) Continuous Collector Current Pulse Collector Current (see fig. 2) Clamped Inductive Load Current (see fig. 3) Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current  Continuous Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw Max. Units 1200 60 40 75 100 40 20 100 ±30 305 120 -40 to +150 V A V W 300 (0.063 in. (1.6mm) from case) 10 lbf·in (1.1 N·m) C Thermal Resistance RJC (IGBT) RJC (Diode) RCS RJA 1 Parameter Thermal Resistance Junction-to-Case-(each IGBT)  Thermal Resistance Junction-to-Case-(each Diode)  Thermal Resistance, Case-to-Sink (flat, greased surface) Thermal Resistance, Junction-to-Ambient (typical socket mount) www.irf.com © 2014 International Rectifier Min. ––– ––– ––– ––– Submit Datasheet Feedback Typ. ––– ––– 0.24 ––– Max. 0.41 0.91 ––– 40 Units °C/W October 30, 2014 IRG8P40N120KDPbF/IRG8P40N120KD-EPbF   Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. V(BR)CES Collector-to-Emitter Breakdown Voltage 1200 — — 1.1 V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage — 1.7 Collector-to-Emitter Saturation Voltage VCE(on) — 2.0 Gate Threshold Voltage 5.0 — VGE(th) — -16 VGE(th)/TJ Threshold Voltage Temperature Coeff. gfe Forward Transconductance — 15 — 1.0 ICES Collector-to-Emitter Leakage Current — 1.0 Gate-to-Emitter Leakage Current — — IGES — 2.1 VF   Diode Forward Voltage Drop   — 2.4 Switching Characteristics @ TJ = 25°C (unless otherwise specified) Min. — — — — — — — — — — — Max. — — Units Conditions V VGE = 0V, IC = 250µA  V/°C VGE = 0V, IC = 5mA (25°C-150°C) 2.0 IC = 25A, VGE = 15V, TJ = 25°C V — IC = 25A, VGE = 15V, TJ = 150°C 6.5 V VCE = VGE, IC = 1.0mA — mV/°C VCE = VGE, IC = 1.0mA (25°C-150°C) — S VCE = 50V, IC = 25A, PW = 20µs 35 µA VGE = 0V, VCE = 1200V mA VGE = 0V, VCE = 1200V, TJ = 150°C — ±200 nA VGE = ±30V 2.7 IF = 25A V — IF = 25A, TJ = 150°C Qg Qge Qgc Eon Eoff Etotal td(on) tr td(off) tf Eon Parameter Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Typ. Max Units Conditions 160 240 IC = 25A 10 15 nC VGE = 15V VCC = 600V 100 150 1.6 — 1.8 — mJ   IC = 25A, VCC = 600V, VGE=15V 3.4 — RG = 10, TJ = 25°C 40 — Energy losses include tail & diode 20 — ns  reverse recovery  245 — 180 — 2.4 — Eoff Etotal td(on) tr td(off) tf Cies Coes Cres Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance RBSOA Reverse Bias Safe Operating Area SCSOA   Short Circuit Safe Operating Area   10  —  —  Erec trr Irr Reverse Recovery Energy of the Diode Diode Reverse Recovery Time Peak Reverse Recovery Current — — — 0.9 80 32 — — — — — — — — — — — — 3.2 5.6 40 20 320 390 2500 140 80 — — — — — — — — — FULL SQUARE mJ  ns IC = 25A, VCC = 600V, VGE=15V RG = 10, TJ = 150°C Energy losses include tail & diode reverse recovery   VGE = 0V pF VCC = 30V f = 1.0Mhz TJ = 150°C, IC = 100A VCC = 960V, Vp ≤ 1200V VGE = +20V to 0V TJ = 150°C,VCC = 600V, Vp ≤ 1200V µs   V = +15V to 0V GE mJ ns A TJ = 150°C VCC = 600V, IF = 25A VGE = 15V, Rg = 10 Notes:       VCC = 80% (VCES), VGE = 20V. R is measured at TJ of approximately 90°C. Refer to AN-1086 for guidelines for measuring V(BR)CES safely. Maximum limits are based on statistical sample size characterization. Pulse width limited by max. junction temperature. Values influenced by parasitic L and C in measurement. 2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 30, 2014 IRG8P40N120KDPbF/IRG8P40N120KD-EPbF   70 For both: Duty cycle : 50% Tj = 150°C Tcase = 100°C Gate drive as specified Power Dissipation = 125W Load Current ( A ) 60 50 40 30 Square Wave: VCC 20 I 10 Diode as specified 0 0.1 1 10 100 f , Frequency ( kHz ) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 1000 10µsec 10 100µsec 1 IC (A) IC (A) 100 10 1msec Tc = 25°C Tj = 150°C Single Pulse DC 0.1 1 1 10 100 1000 10000 10 100 VCE (V) 100 10 10 Tc = -40°C Tc = 25°C Tc = 150°C ICE (A) ICE (A) 100 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 1.0 10000 Fig. 4 - Reverse Bias SOA TJ = 150°C; VGE = 20V Fig. 2 - Forward SOA TC = 25°C; TJ ≤ 150°C; VGE = 15V 1 0.1 0.1 0 2 4 6 8 10 V CE (V) Fig. 4 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 20µs 3 1000 VCE (V) www.irf.com © 2014 International Rectifier 0 2 4 6 8 10 V CE (V) Fig. 5 - Typ. IGBT Saturation Voltage VGE = 15V; tp = 20µs Submit Datasheet Feedback October 30, 2014 IRG8P40N120KDPbF/IRG8P40N120KD-EPbF   100 VGE, Gate-to-Emitter Voltage (V) 16 ICE (A) 10 1 TJ = -40°C TJ = 25°C TJ = 150°C 0.1 14 VCES = 600V VCES = 400V 12 10 8 6 4 2 0 4 6 8 10 12 14 16 0 20 40 80 100 120 140 160 180 V GE (V) Q G, Total Gate Charge (nC) Fig. 6 - Typ. Transfer Characteristics VCE = 50V; tp = 20µs Fig. 7 - Typical Gate Charge vs. VGE ICE = 25A 1000 10 tF EOFF @ Tj = 150°C EON @ Tj = 150°C 8 tdOFF ERR @ Tj = 150°C 6 Swiching Time (ns) Energy (mJ) 60 EOFF @ Tj = 25°C EON @ Tj = 25°C ERR @ Tj = 25°C 4 100 tdON 10 tR 2 1 0 0 5 0 10 15 20 25 30 35 40 45 50 10 40 50 Fig. 9 - Typ. Switching Time vs. IC TJ = 150°C; VCE = 600V, RG = 10; VGE = 15V Fig. 8 - Typ. Energy Loss vs. IC VCE = 600V, RG = 10; VGE = 15V 10000 8 EON @ Tj = 150°C EOFF @ Tj = 150°C 7 5 Swiching Time (ns) ERR @ Tj = 150°C 6 Energy (mJ) 30 IC (A) IC (A) EON @ Tj = 25°C EOFF @ Tj = 25°C ERR @ Tj = 25°C 4 3 1000 tdOFF tF 100 tdON 2 tR 1 10 0 10 15 20 25 30 35 40 45 50 Rg () Fig. 10 - Typ. Energy Loss vs. RG VCE = 600V, ICE = 25A; VGE = 15V 4 20 www.irf.com © 2014 International Rectifier 10 20 30 40 50 RG ( ) Fig. 11 - Typ. Switching Time vs. RG TJ = 150°C; VCE = 600V, ICE = 25A; VGE = 15V Submit Datasheet Feedback October 30, 2014 IRG8P40N120KDPbF/IRG8P40N120KD-EPbF   35 2500 VCC = 600V Tj = 150°C VGE = 15V 33 2000 IF = 25A IRR (A) Energy (µJ) R G = 10  31 R G =  29 1500 1000 RG = 10 RG = 20 RG = 30 R G = 30  27 500 RG = 50 R G = 50  25 0 800 900 1000 1100 1200 1300 1400 0 10 diF /dt (A/µs) 20 30 40 50 IF (A) Fig. 12 - Typ. IRR vs. di/dt Fig. 13 - Typ. Diode ERR vs. IF TJ = 150°C 100 -40°C 25°C 150°C IF (A) 10 1 0.1 0.0 1.0 2.0 3.0 4.0 5.0 6.0 V F (V) Fig. 14 - Typ. Diode Forward Voltage Drop Characteristics Fig. 16 - Typ. Energy Loss vs. RG TJ = 150°C; VCE = 600V, ICE = 25A; VGE = 15V 5 www.irf.com © 2014 International Rectifier Fig. 17 - Typ. Switching Time vs. RG TJ = 150°C; VCE = 600V, ICE = 25A; VGE = 15V Submit Datasheet Feedback October 30, 2014 IRG8P40N120KDPbF/IRG8P40N120KD-EPbF   1 Thermal Response ( ZthJC ) D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 0.01 J SINGLE PULSE ( THERMAL RESPONSE ) 0.001 R1 R1 J 1 R2 R2 R3 R3 R4 R4 C 2 1 3 2 4 3 C 4 Ci= iRi Ci= iRi Ri (°C/W) i (sec) 0.00724 0.000009 0.11441 0.000208 0.18248 0.002779 0.10572 0.016796 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 15 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) 10 Thermal Response ( ZthJC ) 1 D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 0.01 J R1 R1 J 1 R2 R2 R3 R3 C 2 1 2 3 3 Ci= iRi Ci= iRi 0.001 1E-005 0.0001 i (sec) 0.26204 0.000556 0.41688 0.003127 0.23078 0.020774 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 C Ri (°C/W) 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 16 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) 6 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 30, 2014 IRG8P40N120KDPbF/IRG8P40N120KD-EPbF   L L 0 80 V + VCC DUT - DUT 1K VCC Rg Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit diode clamp / DUT L 4X DC VCC -5V DUT / DRIVER DUT VCC Rg RSH Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit (Board Stray Inductance 180nH) C force 100K D1 22K C sense DUT G force 0.0075µF E sense E force Fig.C.T.5 - BVCES Filter Circuit 7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 30, 2014 IRG8P40N120KDPbF/IRG8P40N120KD-EPbF   800 160 700 140 VCE 600 Vce (V) 500 120 100 ICE 400 80 300 60 200 40 100 20 0 0 -100 -5.00 0.00 5.00 10.00 -20 15.00 Time (uS) Fig. WF1 - Typ. S.C. Waveform @ TJ = 150°C using Fig. CT.3 8 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 30, 2014 IRG8P40N120KDPbF/IRG8P40N120KD-EPbF   TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information Notes: This part marking information applies to devices produced after 02/26/2001 EXAMPLE: THIS IS AN IRFPE30 WITH ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2001 IN THE ASSEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INTERNATIONAL RECTIFIER LOGO PART NUMBER IRFPE30 56 135H 57 ASSEMBLY LOT CODE DATE CODE YEAR 1 = 2001 WEEK 35 LINE H TO-247AC package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 30, 2014 IRG8P40N120KDPbF/IRG8P40N120KD-EPbF   TO-247AD Package Outline Dimensions are shown in millimeters (inches) TO-247AD Part Marking Information E X A M P L E : T H IS IS A N IR G P 3 0 B 1 2 0 K D - E W IT H A S S E M B L Y LO T C O D E 5657 ASSEM B LED O N W W 35, 2000 IN T H E A S S E M B L Y L IN E "H " N o te : "P " in a s s e m b ly lin e p o s itio n in d ic a te s "L e a d - F re e " PART N U M BER IN T E R N A T IO N A L R E C T IF IE R LO G O 56 035H 57 ASSEM B LY LO T C O D E D A TE C O D E YE A R 0 = 2 0 0 0 W EEK 35 L IN E H TO-247AD package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 30, 2014 IRG8P40N120KDPbF/IRG8P40N120KD-EPbF   Qualification Information† Industrial† Qualification Level   TO-247AC Moisture Sensitivity Level (per JEDEC JESD47F) †† N/A TO-247AD N/A Yes RoHS Compliant † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ †† Applicable version of JEDEC standard at the time of product release. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 11 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 30, 2014