IRG8P60N120KD-EPBF

IRG8P60N120KDPbF IRG8P60N120KD-EPbF   Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V     C IC = 60A, TC =100°C tSC 10µs, TJ(max) = 150°C G G VCE(ON) typ. = 1.7V @ IC = 40A E n-channel Applications • Industrial Motor Drive • UPS • Solar Inverters • Welding C E GC IRG8P60N120KDPbF  TO‐247AC  G Gate Features E IRG8P60N120KD‐EPbF  TO‐247AD  C Collector E Emitter Benefits  Benchmark Low VCE(ON) High Efficiency in a Motor Drive Applications 10μs Short Circuit SOA Increases margin for short circuit protection scheme Positive VCE(ON) Temperature Coefficient Excellent Current Sharing in Parallel Operation Square RBSOA and high ILM- rating Rugged Transient Performance Lead-Free, RoHS compliant Environmentally friendly Base part number Package Type IRG8P60N120KDPbF IRG8P60N120KD-EPbF TO-247AC TO-247AD Standard Pack Form Quantity Tube 25 Tube 25 Orderable Part Number IRG8P60N120KDPbF IRG8P60N120KD-EPbF Absolute Maximum Ratings Parameter Max. Units V VCES IC @ TC = 25°C IC @ TC = 100°C ICM Collector-to-Emitter Voltage Continuous Collector Current (Silicon Limited) Continuous Collector Current Pulse Collector Current (see fig. 2) 1200 100 60 120 ILM IF @ TC = 25°C IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Clamped Inductive Load Current (see fig. 3) Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current  Continuous Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw 160 50 30 160 ±30 420 170 -40 to +150 A   V W 300 (0.063 in. (1.6mm) from case) 10 lbf·in (1.1 N·m) C Thermal Resistance RJC (IGBT) RJC (Diode) RCS RJA 1 Parameter Thermal Resistance Junction-to-Case (IGBT)  Thermal Resistance Junction-to-Case (Diode)  Thermal Resistance, Case-to-Sink (flat, greased surface) Thermal Resistance, Junction-to-Ambient (typical socket mount) www.irf.com © 2014 International Rectifier Min. ––– ––– ––– ––– Submit Datasheet Feedback Typ. ––– ––– 0.24 40 Max. 0.3 0.8 ––– ––– Units °C/W October 30, 2014   IRG8P60N120KDPbF/IRG8P60N120KD-EPbF   Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES V(BR)CES/TJ Parameter Collector-to-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Min. 1200 — Typ. — 1.0 — 1.7 — 2.1 Gate Threshold Voltage 5.0 — VGE(th) Threshold Voltage Temperature Coeff. — -16 VGE(th)/TJ gfe Forward Transconductance — 22 — 1.0 ICES Collector-to-Emitter Leakage Current — 1.2 Gate-to-Emitter Leakage Current IGES — — — 2.3 Diode Forward Voltage Drop   VF   — 2.5 Switching Characteristics @ TJ = 25°C (unless otherwise specified) Max. — — 2.0 V IC = 40A, VGE = 15V, TJ = 25°C — IC = 40A, VGE = 15V, TJ = 150°C 6.5 V VCE = VGE, IC = 1.6mA — mV/°C VCE = VGE, IC = 1.6mA (25°C-150°C) — S VCE = 50V, IC = 40A, PW = 20µs 35 µA VGE = 0V, VCE = 1200V — mA  VGE = 0V, VCE = 1200V, TJ = 150°C ±400 nA VGE = ±30V 2.9 V IF = 40A — IF = 40A, TJ = 150°C VCE(on) Collector-to-Emitter Saturation Voltage Qg Qge Qgc Eon Eoff Etotal td(on) tr td(off) tf Eon Parameter Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Eoff Etotal td(on) tr td(off) tf Cies Coes Cres Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance RBSOA Reverse Bias Safe Operating Area SCSOA   Short Circuit Safe Operating Area   10  —  —  Erec trr Irr Reverse Recovery Energy of the Diode Diode Reverse Recovery Time Peak Reverse Recovery Current — — — 1.8 210 21 — — — Min. — — — — — — — — — — — Typ. 230 15 140 2.8 2.3 5.1 40 30 240 110 4.4 — — — — — — — — — 4.2 8.6 40 30 310 110 3700 215 120 Units Conditions V VGE = 0V, IC = 250µA  V/°C VGE = 0V, IC = 5.0mA (25°C-150°C) Max Units Conditions 345 IC = 40A nC VGE = 15V 25 VCC = 600V 210 — — mJ   IC = 40A, VCC = 600V, VGE=15V — RG = 5.0, TJ = 25°C — Energy losses include tail & diode — ns  reverse recovery  — — — — — — — — — — — — FULL SQUARE mJ  ns IC = 40A, VCC = 600V, VGE=15V RG = 5.0, TJ = 150°C Energy losses include tail & diode reverse recovery   VGE = 0V VCC = 30V f = 1.0Mhz TJ = 150°C, IC = 160A VCC = 960V, Vp ≤ 1200V VGE = +20V to 0V TJ = 150°C,VCC = 600V, Vp ≤ 1200V µs   V = +15V to 0V GE pF mJ ns A TJ = 150°C VCC = 600V, IF = 40A VGE = 15V, Rg = 5.0 Notes:       VCC = 80% (VCES), VGE = 20V. R is measured at TJ of approximately 90°C. Refer to AN-1086 for guidelines for measuring V(BR)CES safely. Maximum limits are based on statistical sample size characterization. Pulse width limited by max. junction temperature. Values influenced by parasitic L and C in measurement. 2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 30, 2014 IRG8P60N120KDPbF/IRG8P60N120KD-EPbF   100 For both: Duty cycle : 50% Tj = 150°C Tcase = 100°C Gate drive as specified Power Dissipation = 167W Load Current ( A ) 80 60 Square Wave: 40 VCC I 20 Diode as specified 0 0.1 1 10 100 f , Frequency ( kHz ) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 1000 1000 100 100 10 100µsec IC (A) IC (A) 10µsec 10 1msec 1 Tc = 25°C Tj = 150°C Single Pulse DC 0.1 1 1 10 100 1000 10 10000 100 1000 10000 VCE (V) VCE (V) Fig. 2 - Forward SOA TC = 25°C; TJ ≤ 150°C; VGE = 15V Fig. 3 - Reverse Bias SOA TJ = 150°C; VGE = 20V 1000 1000 100 ICE (A) 100 ICE (A)   10 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 1.0 10 1 0.1 0.1 0 0 2 4 6 8 10 V CE (V) Fig. 4 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 20µs 3 Tc = -40°C Tc = 25°C Tc = 150°C www.irf.com © 2014 International Rectifier 2 4 6 8 10 V CE (V) Fig. 5 - Typ. IGBT Saturation Voltage VGE = 15V; tp = 20µs Submit Datasheet Feedback October 30, 2014 IRG8P60N120KDPbF/IRG8P60N120KD-EPbF   16 V GE, Gate-to-Emitter Voltage (V) 1000 ICE (A) 100 10 TJ = -40°C TJ = 25°C 1 TJ = 150°C V CES = 600V 14 V CES = 400V 12 10 8 6 4 2 0 0.1 4 6 8 10 12 14 16 18 0 20 50 100 150 200 250 Q G, Total Gate Charge (nC) V GE (V) Fig. 7 - Typical Gate Charge vs. VGE ICE = 40A Fig. 6 - Typ. Transfer Characteristics VCE = 50V; tp = 20µs 1000 16 tdOFF EOFF @ Tj = 150°C EON @ Tj = 150°C Energy (mJ) Swiching Time (ns) ERR @ Tj = 150°C 12 EOFF @ Tj = 25°C 8 EON @ Tj = 25°C ERR @ Tj = 25°C tF 100 tdON 10 tR 4 1 0 0 10 20 30 40 50 60 70 0 80 20 40 1000 EON @ Tj = 150°C EOFF @ Tj = 150°C tdOFF ERR @ Tj = 150°C 6 Swiching Time (ns) EON @ Tj = 25°C EOFF @ Tj = 25°C ERR @ Tj = 25°C 4 tF 100 tdON 2 tR 10 0 5 7 9 11 13 15 17 19 21 23 25 27 Rg () Fig. 10 - Typ. Energy Loss vs. RG VCE = 600V, ICE = 40A; VGE = 15V 4 80 Fig. 9 - Typ. Switching Time vs. IC TJ = 150°C; VCE = 600V, RG = 5.0; VGE = 15V Fig. 8 - Typ. Energy Loss vs. IC VCE = 600V, RG = 5.0; VGE = 15V 8 60 IC (A) IC (A) Energy (mJ)   www.irf.com © 2014 International Rectifier 3 6 9 12 15 18 21 24 27 RG ( ) Fig. 11 - Typ. Switching Time vs. RG TJ = 150°C; VCE = 600V, ICE = 40A; VGE = 15V Submit Datasheet Feedback October 30, 2014 IRG8P60N120KDPbF/IRG8P60N120KD-EPbF   4000 25 VCC = 600V 3000 R G = 5 R G = 10  R G =  R G = 27  RG = 27 2500 Energy (µJ) IF = 40A 23 RG = 5.0 RG = 10 RG = 22 3500 Tj = 150°C VGE = 15V 24 IRR (A) 2000 1500 1000 22 500 0 21 200 400 600 800 1000 1200 20 1400 30 40 50 60 70 80 IF (A) diF /dt (A/µs) Fig. 13 - Typ. Diode ERR vs. IF TJ = 150°C Fig. 12 - Typ. IRR vs. di/dt 1000 -40°C 25°C 150°C 100 IF (A)   10 1 0.1 0.0 1.0 2.0 3.0 4.0 5.0 6.0 V F (V) Fig. 14 - Typ. Diode Forward Voltage Drop Characteristics 5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 30, 2014 IRG8P60N120KDPbF/IRG8P60N120KD-EPbF   Thermal Response ( Z thJC ) 1 0.1 D = 0.50 0.20 0.10 R1 R1 0.05 0.01 J 0.02 0.01 J 1 R2 R2 R3 R3 R4 R4 C 2 1 3 2 4 3 C 4 Ci= iRi Ci= iRi 0.001 SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 1E-005 Ri (°C/W) i (sec) 0.004527 0.000014 0.079980 0.000178 0.134306 0.004032 0.079980 0.019255 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 15- Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) 10 Thermal Response ( Z thJC )   1 D = 0.50 0.20 0.10 0.1 0.05 J 0.02 0.01 0.01 0.001 R1 R1 J 1 R2 R2 R3 R3 C 1 2 2 3 3 Ci= iRi Ci= iRi 1E-005 0.0001 0.001 4 C 4 Ri (°C/W) i (sec) 0.036277 0.000132 0.245235 0.000597 0.294572 0.012360 0.233626 0.098387 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 R4 R4 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig. 16 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) 6 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 30, 2014   IRG8P60N120KDPbF/IRG8P60N120KD-EPbF   L L 0 80 V + VCC DUT - DUT 1K VCC Rg Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit diode clamp / DUT L 4X DC VCC -5V DUT / DRIVER DUT VCC Rg RSH Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit (Board Stray Inductance 180nH) C force 100K D1 22K C sense DUT G force 0.0075µF E sense E force Fig.C.T.5 - BVCES Filter Circuit 7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 30, 2014 IRG8P60N120KDPbF/IRG8P60N120KD-EPbF 800 240 700 210 600 VCE 180 500 150 ICE 400 120 300 90 200 60 100 30 0 -100 -20.00 Ice (A)   Vce (V)   0 -10.00 0.00 -30 10.00 time (µs) Fig. WF1 - Typ. S.C. Waveform @ TJ = 150°C using Fig. CT.3 8 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 30, 2014   IRG8P60N120KDPbF/IRG8P60N120KD-EPbF   TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information Notes: This part marking information applies to devices produced after 02/26/2001 EXAMPLE: THIS IS AN IRFPE30 WITH ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2001 IN THE ASSEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INTERNATIONAL RECTIFIER LOGO PART NUMBER IRFPE30 56 135H 57 ASSEMBLY LOT CODE DATE CODE YEAR 1 = 2001 WEEK 35 LINE H TO-247AC package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 30, 2014   IRG8P60N120KDPbF/IRG8P60N120KD-EPbF   TO-247AD Package Outline Dimensions are shown in millimeters (inches) TO-247AD Part Marking Information E X A M P L E : T H IS IS A N IR G P 3 0 B 1 2 0 K D - E W IT H A S S E M B L Y LO T C O D E 5657 ASSEM BLED O N W W 35, 2000 IN T H E A S S E M B L Y L IN E "H " N o te : "P " in a s s e m b ly lin e p o s itio n in d ic a te s "L e a d - F re e " PART N U M BER IN T E R N A T IO N A L R E C T IF IE R LO G O 56 035H 57 ASSEM B LY LO T C O D E D A TE C O D E YE A R 0 = 2 0 0 0 W EEK 35 L IN E H TO-247AD package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 30, 2014   IRG8P60N120KDPbF/IRG8P60N120KD-EPbF   Qualification Information† Industrial (per JEDEC JESD47F) †† Qualification Level   Moisture Sensitivity Level TO-247AC N/A TO-247AD N/A Yes RoHS Compliant † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ †† Applicable version of JEDEC standard at the time of product release. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 11 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 30, 2014