IRGB4056DPBF

PD - 97188A IRGB4056DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 µS short circuit SOA Square RBSOA 100% of the parts tested for 4X rated current (ILM) Positive VCE (ON) Temperature co-efficient Ultra fast soft Recovery Co-Pak Diode Tight parameter distribution Lead Free Package C VCES = 600V IC = 12A, TC = 100°C tSC ≥ 5µs, TJ(max) = 175°C G VCE(on) typ. = 1.55V E n-channel Benefits C • High Efficiency in a wide range of applications • Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses • Rugged transient Performance for increased reliability • Excellent Current sharing in parallel operation • Low EMI E C G TO-220AB G Gate C Collector E Emitter Absolute Maximum Ratings Parameter Max. Units V VCES Collector-to-Emitter Voltage 600 IC @ TC = 25°C Continuous Collector Current 24 IC @ TC = 100°C Continuous Collector Current 12 ICM ILM Pulse Collector Current Clamped Inductive Load Current IF @ TC = 25°C Diode Continous Forward Current IF @ TC = 100°C IFM Diode Continous Forward Current Diode Maximum Forward Current VGE Continuous Gate-to-Emitter Voltage ±20 Transient Gate-to-Emitter Voltage ±30 PD @ TC = 25°C Maximum Power Dissipation 140 PD @ TC = 100°C Maximum Power Dissipation 70 TJ Operating Junction and TSTG Storage Temperature Range 48 c 48 A 24 12 e 48 V W -55 to +175 °C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m) Thermal Resistance Min. Typ. Max. Units RθJC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) Parameter ––– ––– 1.07 °C/W RθJC (Diode) Thermal Resistance Junction-to-Case-(each Diode) ––– ––– 3.66 RθCS Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.50 ––– RθJA Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– 80 ––– 1 www.irf.com 04/11/08 IRGB4056DPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Min. Typ. V(BR)CES Collector-to-Emitter Breakdown Voltage Parameter 600 — — ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.30 — — 1.55 1.85 — 1.90 — — 1.97 — VCE(on) Collector-to-Emitter Saturation Voltage Max. Units VGE(th) Gate Threshold Voltage 4.0 — 6.5 ∆VGE(th)/∆TJ Threshold Voltage temp. coefficient — -18 — gfe ICES Forward Transconductance — 7.7 — Collector-to-Emitter Leakage Current — 2.0 25 — 475 — — 2.10 3.10 — 1.61 — — — ±100 VFM IGES Diode Forward Voltage Drop Gate-to-Emitter Leakage Current V Conditions VGE = 0V, IC = 100µA Ref.Fig f CT6 V/°C VGE = 0V, IC = 1mA (25°C-175°C) IC = 12A, VGE = 15V, TJ = 25°C V CT6 5,6,7 IC = 12A, VGE = 15V, TJ = 150°C 9,10,11 IC = 12A, VGE = 15V, TJ = 175°C V VCE = VGE, IC = 350µA 9, 10, mV/°C VCE = VGE, IC = 1.0mA (25°C - 175°C) S VCE = 50V, IC = 12A, PW = 80µs µA VGE = 0V, VCE = 600V V IF = 12A 11, 12 VGE = 0V, VCE = 600V, TJ = 175°C 8 IF = 12A, TJ = 175°C nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Min. Typ. Qg Total Gate Charge (turn-on) Parameter — 25 Max. Units 38 Qge Gate-to-Emitter Charge (turn-on) — 7.0 11 Qgc Gate-to-Collector Charge (turn-on) — 11 16 VCC = 400V Eon Turn-On Switching Loss — 75 118 IC = 12A, VCC = 400V, VGE = 15V RG = 22Ω, L = 200µH, LS = 150nH, TJ = 25°C Eoff Turn-Off Switching Loss — 225 273 Etotal Total Switching Loss — 300 391 td(on) Turn-On delay time — 31 40 tr Rise time — 17 24 td(off) Turn-Off delay time — 83 94 tf Fall time — 24 31 Eon Turn-On Switching Loss — 185 — Eoff Turn-Off Switching Loss — 355 — Etotal Total Switching Loss — 540 — td(on) Turn-On delay time — 30 — tr Rise time — 18 — Conditions Ref.Fig IC = 12A nC µJ 24 VGE = 15V CT1 CT4 Energy losses include tail & diode reverse recovery IC = 12A, VCC = 400V, VGE = 15V ns CT4 RG = 22Ω, L = 200µH, LS = 150nH, TJ = 25°C IC = 12A, VCC = 400V, VGE=15V µJ RG=22Ω, L=100µH, LS=150nH, TJ = 175°C f Energy losses include tail & diode reverse recovery IC = 12A, VCC = 400V, VGE = 15V ns CT4 WF1, WF2 14, 16 RG = 22Ω, L = 200µH, LS = 150nH CT4 TJ = 175°C WF1 td(off) Turn-Off delay time — 102 tf Fall time — 41 — Cies Input Capacitance — 765 — Coes Output Capacitance — 52 — VCC = 30V Cres Reverse Transfer Capacitance — 23 — f = 1.0Mhz TJ = 175°C, IC = 48A RBSOA Reverse Bias Safe Operating Area FULL SQUARE SCSOA Short Circuit Safe Operating Area 5 — 13, 15 WF2 pF VGE = 0V 23 4 VCC = 480V, Vp =600V CT2 Rg = 22Ω, VGE = +15V to 0V — — µs VCC = 400V, Vp =600V 22, CT3 Rg = 22Ω, VGE = +15V to 0V WF4 Erec trr Reverse Recovery Energy of the Diode — 280 — µJ TJ = 175°C Diode Reverse Recovery Time — 68 — ns VCC = 400V, IF = 12A Irr Peak Reverse Recovery Current — 19 — A VGE = 15V, Rg = 22Ω, L =200µH, Ls = 150nH 17, 18, 19 20, 21 WF3 Notes:  VCC = 80% (VCES), VGE = 20V, L = 100µH, RG = 22Ω. ‚ This is only applied to TO-220AB package. ƒ Pulse width limited by max. junction temperature. „ Refer to AN-1086 for guidelines for measuring V(BR)CES safely. 2 www.irf.com IRGB4056DPbF 25 150 20 125 100 IC (A) Ptot (W) 15 10 75 50 5 25 0 0 0 20 40 60 80 100 120 140 160 180 0 20 40 60 80 100 120 140 160 180 T C (°C) T C (°C) Fig. 1 - Maximum DC Collector Current vs. Case Temperature Fig. 2 - Power Dissipation vs. Case Temperature 100 100 10 IC (A) IC (A) 10µsec 10 100µsec 1 1msec Tc = 25°C Tj = 175°C Single Pulse DC 0.1 1 1 10 100 1000 10000 10 100 VCE (V) VCE (V) Fig. 3 - Forward SOA TC = 25°C, TJ ≤ 175°C; VGE =15V 45 40 40 35 35 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 25 20 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 30 ICE (A) 30 ICE (A) Fig. 4 - Reverse Bias SOA TJ = 175°C; VGE =15V 45 25 20 15 15 10 10 5 5 0 0 0 1 2 3 4 5 6 7 VCE (V) Fig. 5 - Typ. IGBT Output Characteristics TJ = -40°C; tp = 80µs www.irf.com 1000 8 0 1 2 3 4 5 6 7 8 VCE (V) Fig. 6 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 80µs 3 IRGB4056DPbF 45 80 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 40 35 60 -40°c 25°C 175°C 50 25 IF (A) ICE (A) 30 70 20 40 30 15 10 20 5 10 0 0 0 1 2 3 4 5 6 7 8 0.0 1.0 2.0 Fig. 8 - Typ. Diode Forward Characteristics tp = 80µs 20 20 18 18 16 16 14 14 ICE = 6.0A ICE = 12A ICE = 24A 8 VCE (V) VCE (V) Fig. 7 - Typ. IGBT Output Characteristics TJ = 175°C; tp = 80µs 10 4.0 VF (V) VCE (V) 12 3.0 12 10 ICE = 6.0A ICE = 12A 8 ICE = 24A 6 6 4 4 2 2 0 0 5 10 15 5 20 10 15 20 VGE (V) VGE (V) Fig. 10 - Typical VCE vs. VGE TJ = 25°C Fig. 9 - Typical VCE vs. VGE TJ = -40°C 50 20 18 T J = 25°C T J = 175°C 40 16 12 ICE = 6.0A 10 ICE = 12A 8 ICE = 24A ICE (A) VCE (V) 14 30 20 6 10 4 2 0 0 5 10 15 VGE (V) Fig. 11 - Typical VCE vs. VGE TJ = 175°C 4 20 0 5 10 15 VGE (V) Fig. 12 - Typ. Transfer Characteristics VCE = 50V; tp = 10µs www.irf.com IRGB4056DPbF 800 1000 700 tdOFF Swiching Time (ns) Energy (µJ) 600 EOFF 500 400 EON 300 100 tF tdON 10 tR 200 100 0 1 0 10 20 30 5 10 15 20 25 IC (A) IC (A) Fig. 13 - Typ. Energy Loss vs. IC TJ = 175°C; L = 200µH; VCE = 400V, RG = 22Ω; VGE = 15V Fig. 14 - Typ. Switching Time vs. IC TJ = 175°C; L = 200µH; VCE = 400V, RG = 22Ω; VGE = 15V 500 1000 450 400 Swiching Time (ns) EOFF Energy (µJ) 350 300 250 EON 200 tdOFF 100 tF 150 tdON 100 tR 50 10 0 25 50 75 100 125 0 25 50 75 100 125 RG (Ω) Rg (Ω) Fig. 15 - Typ. Energy Loss vs. RG TJ = 175°C; L = 200µH; VCE = 400V, ICE = 12A; VGE = 15V Fig. 16 - Typ. Switching Time vs. RG TJ = 175°C; L = 200µH; VCE = 400V, ICE = 12A; VGE = 15V 25 25 RG = 10Ω 20 20 15 IRR (A) IRR (A) RG = 22Ω RG = 47Ω 10 RG = 100Ω 15 10 5 0 5 0 10 20 IF (A) Fig. 17 - Typ. Diode IRR vs. IF TJ = 175°C www.irf.com 30 0 25 50 75 100 125 RG (Ω) Fig. 18 - Typ. Diode IRR vs. RG TJ = 175°C 5 IRGB4056DPbF 1400 25 1200 20 24A 10Ω QRR (µC) IRR (A) 1000 15 10 22Ω 47Ω 800 12A 600 100Ω 5 400 0 200 0 500 1000 6.0A 0 1500 500 diF /dt (A/µs) 1500 Fig. 20 - Typ. Diode QRR vs. diF/dt VCC = 400V; VGE = 15V; TJ = 175°C Fig. 19 - Typ. Diode IRR vs. diF/dt VCC = 400V; VGE = 15V; IF = 12A; TJ = 175°C 120 18 110 16 100 14 90 12 80 10 70 8 60 6 50 4 40 50 2 30 0 0 RG = 10Ω 350 RG = 22Ω 300 Time (µs) RG = 47Ω 250 200 150 RG = 100Ω 100 0 10 20 20 8 30 10 12 IF (A) 16 18 Fig. 22 - VGE vs. Short Circuit Time VCC = 400V; TC = 25°C 16 VGE, Gate-to-Emitter Voltage (V) 10000 Capacitance (pF) 14 VGE (V) Fig. 21 - Typ. Diode ERR vs. IF TJ = 175°C Cies 1000 100 Coes Cres V CES = 300V 14 V CES = 400V 12 10 8 6 4 2 0 10 0 20 40 60 80 VCE (V) Fig. 23 - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz 6 Current (A) 20 400 Energy (µJ) 1000 diF /dt (A/µs) 100 0 5 10 15 20 25 30 Q G, Total Gate Charge (nC) Fig. 24 - Typical Gate Charge vs. VGE ICE = 12A; L = 600µH www.irf.com IRGB4056DPbF Thermal Response ( Z thJC ) 10 1 D = 0.50 0.20 0.1 R1 R1 0.10 τJ 0.05 0.02 τJ τ1 0.01 0.01 1E-005 0.0001 τ2 τ1 R3 R3 τ3 τ2 τC τ τ3 Ci= τi/Ri Ci i/Ri SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 R2 R2 Ri (°C/W) τi (sec) 0.358 0.000171 0.424 0.001361 0.287 0.009475 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) 10 Thermal Response ( Z thJC ) D = 0.50 1 0.20 0.10 0.05 0.1 τJ 0.01 0.01 0.001 1E-006 R1 R1 0.02 SINGLE PULSE ( THERMAL RESPONSE ) 1E-005 0.0001 τJ τ1 τ1 R2 R2 τ2 R3 R3 τ3 τ2 Ci= τi/Ri Ci i/Ri Ri (°C/W) τC 0.821094 τ τ3 τi (sec) 0.000233 1.913817 0.001894 0.926641 0.014711 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) www.irf.com 7 IRGB4056DPbF L L VC C 80 V DU T D UT 4 80V 0 Rg 1K Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit d io d e clamp / DU T L 4x DC - 5V 360V DU T / D RIVER DUT VCC Rg Fig.C.T.3 - S.C. SOA Circuit R= Fig.C.T.4 - Switching Loss Circuit VCC ICM C force 400µH D1 10K C sense DUT VCC G force DUT 0.0075µ Rg E sense E force Fig.C.T.5 - Resistive Load Circuit 8 Fig.C.T.6 - BVCES Filter Circuit www.irf.com IRGB4056DPbF 500 25 500 50 400 20 400 40 300 15 300 tr 90% ICE 200 10 VCE (V) VCE (V) tf 200 30 90% test TEST C 20 10% test 10 5% ICE 100 5 100 5% VCE 5% VCE 0 0 0 0 EOFF Loss 0.00 0.50 1.00 EON 1.50 -5 2.00 -100 11.70 Time(µs) 11.90 QRR 15 500 250 400 200 tRR VCE 10 300 150 VCE (V) I RR (A) 5 0 -10 -10 12.10 Fig. WF2 - Typ. Turn-on Loss Waveform @ TJ = 175°C using Fig. CT.4 25 -5 12.00 Time (µs) Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 175°C using Fig. CT.4 20 11.80 10% Peak IRR Peak IRR -15 ICE 200 100 100 50 0 I CE (A) -100 -0.50 0 -20 -25 -0.05 0.05 0.15 -100 -5.00 0.00 5.00 -50 10.00 time (µS) time (µS) Fig. WF3 - Typ. Diode Recovery Waveform @ TJ = 175°C using Fig. CT.4 Fig. WF4 - Typ. S.C. Waveform @ TJ = 25°C using Fig. CT.3 www.irf.com 9 IRGB4056DPbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) TO-220AB Part Marking Information (;$03/( 7+,6,6$1,5) /27&2'( $66(0%/('21:: ,17+($66(0%/