IRGC4274B

PD - 97786 IRGC4274B Features  Low VCE (on) Trench IGBT Technology  Low Switching Losses  Maximum Junction Temperature 175 °C  Short Circuit Rated  Square RBSOA  Positive VCE (on) Temperature Coefficient  Tight Parameter Distribution  Integrated Gate Resistor C G E n-channel Benefits  High Efficiency in a Wide Range of Applications  Suitable for a Wide Range of Switching Frequencies due to Low VCE (on) and Low Switching Losses  Rugged Transient Performance for Increased Reliability  Excellent Current Sharing in Parallel Operation  Easier Paralleling with Integrated Gate Resistor Chip Type IRGC4274B VCE 650V ICn 150A Applications  Industrial Motor Drive  Inverters  UPS  Welding Die Size 8.74 x 8.74 mm Package 2 Wafer Mechanical Parameter Die Size Minimum Street Width Emiter Pad Size (Included Gate Pad) Gate Pad Size Area Total / Active Thickness Wafer Size Flat Position Maximum-Possible Chips per Wafer Passivation Frontside Front Metal Backside Metal Die Bond Reject Ink Dot Size www.irf.com 8.74 x 8.74 75 See Die Drawing 0.7x1.7 76.4/61.7 70 150 0 182 pcs Silicon Nitride Al (4μm) mm2 μm mm2 μm mm Degrees Al (0.1um), Ti (0.1um), Ni (0.4um), Ag (0.6um) Electrically conductive epoxy or solder 0.25mm diameter minimum black 1 05/07/12 IRGC4274B Maximum Ratings Parameter VCE Collector-Emitter Voltage, TJ=25°C IC DC Collector Current ILM Clamped Inductive Load Current VGE Gate Emitter Voltage TJ, TSTG Operating Junction and Storage Temperature Max. Units 650 V 600 A c d A ± 20 V -40 to +175 °C Static Characteristics (Tested on wafers) . TJ=25°C Parameter Min. Typ. Conditions Max. Units e V(BR)CES Collector-to-Emitter Breakdown Voltage 650 ––– ––– VCE(on) Collector-to-Emitter Saturation Voltage ––– 1.0 1.3 VGE(th) Gate-Emitter Threshold Voltage 5.5 ––– 7.7 ICES Zero Gate Voltage Collector Current ––– 1.0 15 μA VCE = 650V, VGE = 0V IGES Gate Emitter Leakage Current ––– ––– ± 600 nA VCE = 0V, VGE = ±20V RG INTERNAL Internal Gate Resistance 1.4 1.9 2.4  V VGE = 0V, IC = 100μA VGE = 15V, IC = 20A , TJ=25°C IC = 5.0mA , VGE = VCE Electrical Characteristics (Not subject to production test- Verified by design/characterization) Parameter VCE(on) Collector-to-Emitter Saturation Voltage SCSOA Short Circuit Safe Operating Area Min. Typ. ––– 1.6 1.9 ––– 2.0 ––– 5.5 ––– Conditions Max. Units ––– f = 150A , T =175°C f =400Vg V VGE = 15V, IC = 150A , TJ=25°C μs VGE = 15V, IC VGE=15V, VCC J RG=5, VP ”600V, TJ ”150°C TJ = 175°C, IC = 600A RBSOA Reverse Bias Safe Operating Area VCC = 480V, Vp ”600V FULL SQUARE RG = 5, VGE = +20V to 0V Ciss Input Capacitance ––– 9900 ––– Coss Output Capacitance ––– 460 ––– Crss Reverse Transfer Capacitance ––– 250 Qg Total Gate Charge (turn-on) — 310 — Qge Gate-to-Emitter Charge (turn-on) — 95 — Qgc Gate-to-Collector Charge (turn-on) — 130 — VGE = 0V pF VCE = 30V ƒ = 1.0MHz ––– IC = 150A nC VGE = 15V VCC = 400V Switching Characteristics (Inductive Load-Not subject to production test-Verified by design/ characterization) Parameter Min. Typ. Max. Units Conditions td(on) Turn-On delay time — 95 — IC = 150A, VCC = 400V tr Rise time — 200 — RG = 5, VGE=15V td(off) Turn-Off delay time — 220 — TJ = 25°C tf Fall time — 85 — td(on) Turn-On delay time — 85 — IC = 150A, VCC = 400V tr Rise time — 200 — RG = 5, VGE=15V td(off) Turn-Off delay time — 270 — TJ = 175°C tf Fall time — 110 — Notes:  The current in the application is limited by TJMax and the thermal properties of the assembly. ‚ VCC = 80% (VCES), VGE = 20V, L = 66μH, RG = 5.0 ƒ Refer to AN-1086 for guidelines for measuring V(BR)CES safely. „ Die level characterization. … Not subject to production test- Verified by design / characterization. † Pulse width limited by max. junction temperature. ‡ Values influenced by parasitic L and C in measurement. 2 hi ns www.irf.com IRGC4274B Chip drawing 8.7430 [.3442] 3.7880 [.1491] 2X 0.4525 [.0178] 0.2620 [.0103] 1.7170 [.0676] 0.3410 [.0134] 0.2050 [.0081] 0.2050 [.0081] 0.7270 [.0286] 7.8390 [.3086] 8.7430 [.3442] 0.4520 [.0178] 4.0080 [.1578] NOTES : 1. ALL DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES]. 2. CONTROLLING DIMENS ION: INCHES 3. DIE WIDTH AND LENGT H T OLERANCE: -0.0508 [.002] 4. DIE T HICKNES S = 0.070 [.00276] www.irf.com 3 IRGC4274B Additional Testing and Screening For Customers requiring product supplied as Known Good Die (KGD) or requiring specific die level testing, please contact your local IR Sales. Shipping Three shipping options are offered.  Un-sawn wafer  Die in waffle pack (consult the IR Die Sales team for availability)  Die on film (consult the IR Die Sales team for availability) Tape and Reel is also available for some products. Please consult your local IR sales office or email http:// die.irf.com for additional information. Please specify your required shipping option when requesting prices and ordering Die product. If not specified, Un-sawn wafer will be assumed. Handling    Product must be handled only at ESD safe workstations. Standard ESD precautions and safe work environments are as defined in MIL-HDBK-263. Product must be handled only in a class 10,000 or better-designated clean room environment. Singulated die are not to be handled with tweezers. A vacuum wand with a non-metallic ESD protected tip should be used. General Wafer/Die Storage  Proper storage conditions are necessary to prevent product contamination and/or degradation after shipment.  Un-sawn wafers in the original vacuum sealed packaging can be stored for up to 3 years at a temperature of less than 30° C and less than 30% relative humidity.  Singulated die and KGD products that have been opened should be kept in their original packaging and transferred to a filtered N2 environment upon immediate opening of packaging in a clean room environment. The storage condition must ensure a less than 30% relative humidity and at a temperature less than 30° C. ESD precautions to EIS-541 should be maintained to ensure safe handling, storage and transportation requirement. Maximum shelf life is 2 years from date of manufacture.  Note: Warning products are sensitive to environmental conditions and should be stored immediately in a N2 filtered environment at