IRGP4050

PD-95882 IRGP4050 PDP Switch Features § § § § § § Key parameters optimized for PDP sustain & Energy recovery applications 104A continuous collector current rating reduces component count High pulse current rating makes it ideal for capacitive load circuits Low temperature co-efficient of VCE (ON) ensures reduced power dissipation at operating junction temperatures Reverse voltage avalanche rating improves the robustness in sustain driver application Short fall & rise times for fast switching C VCES = 250V VCE(on) typ. = 1.64V G @VGE = 15V, IC = 30A E n-channel Description This IGBT is specifically designed for sustain & energy recovery application in plasma display panels. This IGBT features low V CE (ON) and fast switching times to improve circuit efficiency and reliability. Low temperature co-efficient of VCE (ON) makes this IGBT an ideal device for PDP sustain driver application. TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current Clamped Inductive Load current c d Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy e Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Solder Temperature Range, for 10 sec. Max. Units 250 104* 56 208 290 ±20 1240 330 130 -55 to +150 V A V mJ W °C 300 (0.063 in. (1.6mm) from case) Thermal / Mechanical Characteristics Min. Typ. Max. Units RθJC RθCS RθJA Junction-to-Case- IGBT Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Parameter ––– ––– ––– ––– 0.24 ––– 0.38 ––– 40 °C/W Wt Weight ––– 6 (0.21) ––– g (oz.) *Package limited to 60A. 1 www.irf.com 07/05/04 IRGP4050 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Collector-to-Emitter Breakdown Voltage V(BR)CES V(BR)ECS Emitter-to-Collector Breakdown Voltage ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage f VCE(on) Collector-to-Emitter Saturation Voltage VGE(th) ∆VGE(th)/∆TJ Gate Threshold Voltage Threshold Voltage temp. coefficient gfe ICES Forward Transconductance Zero Gate Voltage Collector Current IGES Gate-to-Emitter Leakage Current g 250 18 — — — — 3.0 — 34 — — — — Conditions — — V VGE = 0V, IC = 250µA — — V VGE = 0V, IC = 1.0A 8.2 — mV/°C VGE = 0V, IC = 1mA IC = 30A 1.64 1.90 IC = 56A VGE = 15V 2.04 — V IC = 104A, TJ = 150°C See Fig. 2, 5 2.60 — VCE = VGE, IC = 250µA — 6.0 -11 — mV/°C VCE = VGE, IC = 0.25mA 51 — S VCE = 100V, IC = 56A VGE = 0V, VCE = 250V — 250 — 2.0 µA VGE = 0V, VCE = 10V VGE = 0V, VCE = 250V, TJ = 150°C — 5000 — ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Qg Qge Qgc td(on) tr td(off) tf Eon Eoff ETS td(on) tr td(off) tf ETS LE Cies Coes Cres Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. Max. Units — — — — — — — — — — — — — — — — — — — 230 37 78 37 35 120 59 45 125 170 35 35 130 120 280 13 4650 480 92 350 56 120 — — 180 89 — — — — — — — — — — — — nC ns Conditions IC = 56A VCC = 200V See Fig. 8 VGE = 15V TJ = 25°C IC = 30A, VCC = 180V VGE = 15V, RG = 5.0Ω Energy losses include "tail" See Fig. 9, 10, 14 µJ ns µJ nH pF TJ = 150°C IC = 30A, VCC = 180V VGE = 15V, RG = 5.0Ω Energy losses include "tail" See Fig. 11, 14 Measured 5mm from package VGE = 0V VCC = 30V, See Fig. 7 f = 1.0MHz Notes:  ‚ ƒ „ … Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) VCC = 80%(VCES ), VGE = 20V, L = 10µH, RG = 5.0Ω, (See fig. 13a). Repetitive rating; pulse width limited by maximum junction temperature. Pulse width ≤ 2.5ms; duty factor ≤ 0.1%. Pulse width 5.0µs, single shot. 2 www.irf.com IRGP4050 140 Triangular wave: For both: Duty cycle : 50% Tj = 125°C Tsink = 90°C Gate drive as specified Power Dissipation = 73W 120 Clamp voltage: 80% of rated Load Current ( A ) 100 80 60 Square wave: 60% of rated voltage 40 20 Ideal diodes 0 0.1 1 10 100 f , Frequency ( kHz ) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 1000 IC, Collector-to-Emitter Current (A) IC, Collector-to-Emitter Current (A) 1000 T J = 150°C 100 10 T J = 25°C 1 V GE = 15V 20µs PULSE WIDTH 0.1 0.1 1 10 V CE, Collecto-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com 100 100 10 T J = 150°C 1 TJ = 25°C 0.1 VCC = 50V 20µs PULSE WIDTH 0.01 0 2 4 6 8 10 12 14 16 VGE, Gate-to-Emitter Voltage (V) Fig. 3 - Typical Transfer Characteristics 3 IRGP4050 4.0 LIMITED BY PACKAGE 100 80 60 40 20 50 75 100 125 IC = 112A 3.0 IC = 56A 2.0 IC = 28A 0 25 VGE = 15V 80µs PULSE WIDTH VCE , Collector-to Emitter Voltage (V) Maximum DC Collector Current (A) 120 1.0 150 -60 -40 -20 T C , Case Temperature (°C) 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response ( Z thJC ) 1 D = 0.50 0.1 0.20 0.10 0.05 0.01 0.001 τJ 0.02 0.01 R1 R1 τJ τ1 τ1 R2 R2 τ2 R3 R3 τ3 τ2 τC τ τ3 Ri (°C/W) τi (sec) 0.0906 0.000350 0.0906 0.002209 0.2003 Ci= τi/Ri Ci i/Ri SINGLE PULSE ( THERMAL RESPONSE ) 0.028536 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRGP4050 100000 VGE, Gate-to-Emitter Voltage (V) C oes = C ce + Cgc 10000 Capacitance (pF) 16 VGS = 0V, f = 1 MHZ C ies = C ge + C gd, C ce SHORTED C res = C gc Cies 1000 Coes 100 Cres VCES = 200V IC = 56A 14 12 10 8 6 4 2 10 0 0 50 100 150 200 0 VCE, Collector-toEmitter-Voltage(V) 7000 TJ = 25°C I C = 56A 1800 1600 1400 1200 4000 3000 2000 1000 800 0 5 10 15 20 25 RG, Gate Resistance (Ω) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com 30 IC = 112A 5000 1000 0 200  RG = 5.0Ω V GE = 15V 6000 Total Swiching Losses (µJ) Total Swiching Losses (µJ) 2000 150 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 2400 2200 100 Q G, Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage VCE = 200V VGE = 15V 50 IC = 56A IC = 28A -55 -5 45 95 145 T J, Juntion Temperature (°C) Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRGP4050 6000 1000 Total Swiching Losses (µJ) 5000 IC, Collector-to-Emitter Current (A) RG = 5.0Ω TJ = 150°C V CE= 200V V GE = 15V 4000 3000 2000 1000 100 SAFE OPERATING AREA 10 1 0 20 40 60 80 100 IC, Collecto-to-Emitter (A) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 6 VGE = 20V T J = 125° 120 1 10 100 1000 VDS, Drain-to-Source Voltage (V) Fig. 12 - Turn-Off SOA www.irf.com IRGP4050 L D.U.T. VC * 50V RL = 0 - 480V 1000V c 480V 4 X I C@25°C 480µF 960V d * Driver same type as D.U.T.; Vc = 80% of Vce(max) * Note: Due to the 50V power supply, pulse width and inductor will increase to obtain rated Id. Fig. 13a - Clamped Inductive Fig. 13b - Pulsed Collector Load Test Circuit Current Test Circuit IC L Driver* D.U.T. VC Test Circuit 50V 1000V c Fig. 14a - Switching Loss d e * Driver same type as D.U.T., VC = 480V c d 90% e VC 10% 90% Fig. 14b - Switching Loss t d(off) 10% I C 5% Waveforms tf tr t d(on) t=5µs E on E off E ts = (Eon +Eoff ) www.irf.com 7 IRGP4050 TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information (;$03/( 7+,6,6$1,5)3( :,7+$66(0%/