IRGP4062DPBF

IRGB4062DPbF IRGP4062DPbF IRGP4062D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 μS short circuit SOA Square RBSOA 100% of the parts tested for ILM  Positive VCE (ON) Temperature co-efficient Ultra fast soft Recovery Co-Pak Diode Tight parameter distribution Lead Free Package C VCES = 600V IC = 24A, TC = 100°C tSC 5μs, TJ(max) = 175°C G VCE(on) typ. = 1.65V E n-channel C C C Benefits • High Efficiency in a wide range of applications • Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses • Rugged transient Performance for increased reliability • Excellent Current sharing in parallel operation • Low EMI E C G E C G TO-220AB IRGB4062DPbF G Gate TO-247AC IRGP4062DPbF C Collector E C G TO-247AD IRGP4062D-EPbF E Emitter Absolute Maximum Ratings Parameter Max. Units V V CES Collector-to-Emitter Voltage 600 IC @ TC = 25°C Continuous Collector Current 48 IC @ TC = 100°C ICM Continuous Collector Current 24 Pulse Collector Current, VGE = 15V 72 c ILM Clamped Inductive Load Current, VGE = 20V IF @ TC = 25°C Diode Continous Forward Current IF @ TC = 100°C IFM Diode Continous Forward Current Diode Maximum Forward Current V GE Continuous Gate-to-Emitter Voltage ±20 Transient Gate-to-Emitter Voltage ±30 96 A 48 24 e 96 PD @ TC = 25°C Maximum Power Dissipation 250 PD @ TC = 100°C Maximum Power Dissipation 125 TJ Operating Junction and TST G Storage Temperature Range V W -55 to +175 °C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m) Thermal Resistance Parameter Min. Typ. Max. R JC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) TO-220AB ––– ––– 0.60 R JC (Diode) Thermal Resistance Junction-to-Case-(each Diode) TO-220AB ––– ––– 1.53 R JC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) TO-247 ––– ––– 0.65 R JC (Diode) Thermal Resistance Junction-to-Case-(each Diode) TO-247 ––– ––– 1.62 ––– 0.50 ––– ––– 80 ––– R CS Thermal Resistance, Case-to-Sink (flat, greased surface) R JA Thermal Resistance, Junction-to-Ambient (typical socket mount) 1 www.irf.com © 2013 International Rectifier Units °C/W July 17, 2013 IRGB4062DPbF/IRGP4062DPbF/IRGP4062D-EPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Min. Typ. V(BR)CES Collector-to-Emitter Breakdown Voltage Parameter 600 — — V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage — 0.30 — — 1.60 1.95 — 2.03 — — 2.04 — VCE(on) Collector-to-Emitter Saturation Voltage Max. Units VGE(th) Gate Threshold Voltage 4.0 — 6.5 VGE(th)/TJ Threshold Voltage temp. coefficient — -18 — gfe ICES Forward Transconductance — 17 — Collector-to-Emitter Leakage Current — 2.0 25 — 775 — — 1.80 2.6 — 1.28 — — — ±100 VFM Diode Forward Voltage Drop IGES Gate-to-Emitter Leakage Current V Conditions VGE = 0V, IC = 100μA Ref.Fig f CT6 V/°C VGE = 0V, IC = 1mA (25°C-175°C) IC = 24A, VGE = 15V, TJ = 25°C V CT6 5,6,7 IC = 24A, VGE = 15V, TJ = 150°C 9,10,11 IC = 24A, VGE = 15V, TJ = 175°C V VCE = VGE, IC = 700μA 9, 10, mV/°C VCE = VGE, IC = 1.0mA (25°C - 175°C) S VCE = 50V, IC = 24A, PW = 80μs μA VGE = 0V, VCE = 600V V IF = 24A 11, 12 VGE = 0V, VCE = 600V, TJ = 175°C 8 IF = 24A, TJ = 175°C nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Min. Typ. Qg Total Gate Charge (turn-on) Parameter — 50 Max. Units 75 Qge Gate-to-Emitter Charge (turn-on) — 13 20 Qgc Gate-to-Collector Charge (turn-on) — 21 31 VCC = 400V Eon Turn-On Switching Loss — 115 201 IC = 24A, VCC = 400V, VGE = 15V RG = 10, L = 200μH, LS = 150nH, TJ = 25°C Eoff Turn-Off Switching Loss — 600 700 Etotal Total Switching Loss — 715 901 td(on) Turn-On delay time — 41 53 tr Rise time — 22 31 Conditions Ref.Fig IC = 24A nC μJ 24 VGE = 15V CT1 CT4 Energy losses include tail & diode reverse recovery IC = 24A, VCC = 400V, VGE = 15V ns CT4 RG = 10, L = 200μH, LS = 150nH, TJ = 25°C td(off) Turn-Off delay time — 104 115 tf Fall time — 29 41 Eon Turn-On Switching Loss — 420 — Eoff Turn-Off Switching Loss — 840 — Etotal Total Switching Loss — 1260 — Energy losses include tail & diode reverse recovery td(on) Turn-On delay time — 40 — IC = 24A, VCC = 400V, VGE = 15V — RG = 10, L = 200μH, LS = 150nH CT4 TJ = 175°C WF1 tr Rise time — 24 IC = 24A, VCC = 400V, VGE=15V μJ ns RG=10, L= 200μH, LS=150nH, TJ = 175°C td(off) Turn-Off delay time — 125 — tf Fall time — 39 — Cies Input Capacitance — 1490 — Coes Output Capacitance — 129 — VCC = 30V Cres Reverse Transfer Capacitance — 45 — f = 1.0Mhz TJ = 175°C, IC = 96A RBSOA Reverse Bias Safe Operating Area FULL SQUARE SCSOA Short Circuit Safe Operating Area 5 f 13, 15 CT4 WF1, WF2 14, 16 WF2 pF VGE = 0V 23 4 VCC = 480V, Vp =600V CT2 Rg = 10, VGE = +20V to 0V — — μs VCC = 400V, Vp =600V 22, CT3 Rg = 10, VGE = +15V to 0V WF4 Erec trr Reverse Recovery Energy of the Diode — 621 — μJ TJ = 175°C Diode Reverse Recovery Time — 89 — ns VCC = 400V, IF = 24A Irr Peak Reverse Recovery Current — 37 — A VGE = 15V, Rg = 10, L =200μH, Ls = 150nH 17, 18, 19 20, 21 WF3 Notes:  VCC = 80% (VCES), VGE = 20V, L = 100μH, RG = 10 ‚ This is only applied to TO-220AB package. ƒ Pulse width limited by max. junction temperature. „ Refer to AN-1086 for guidelines for measuring V(BR)CES safely. 2 www.irf.com © 2013 International Rectifier July 17, 2013 IRGB4062DPbF/IRGP4062DPbF/IRGP4062D-EPbF 50 300 45 250 40 35 200 Ptot (W) IC (A) 30 25 20 150 100 15 10 50 5 0 0 0 20 40 60 80 100 120 140 160 180 0 20 40 60 80 100 120 140 160 180 T C (°C) T C (°C) Fig. 1 - Maximum DC Collector Current vs. Case Temperature Fig. 2 - Power Dissipation vs. Case Temperature 1000 1000 100 100 IC (A) IC (A) 10μsec 10 100μsec 1 10 1msec Tc = 25°C Tj = 175°C Single Pulse DC 0.1 1 1 10 100 1000 10000 10 100 VCE (V) VCE (V) Fig. 3 - Forward SOA TC = 25°C, TJ 175°C; VGE =15V Fig. 4 - Reverse Bias SOA TJ = 175°C; VGE =20V 90 90 80 80 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V ICE (A) 60 50 70 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 60 ICE (A) 70 40 50 40 30 30 20 20 10 10 0 0 0 1 2 3 4 5 6 7 8 VCE (V) Fig. 5 - Typ. IGBT Output Characteristics TJ = -40°C; tp = 80μs 3 1000 www.irf.com © 2013 International Rectifier 0 1 2 3 4 5 6 7 8 VCE (V) Fig. 6 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 80μs July 17, 2013 IRGB4062DPbF/IRGP4062DPbF/IRGP4062D-EPbF 90 120 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 80 70 80 50 IF (A) ICE (A) 60 100 40 30 -40°c 25°C 175°C 60 40 20 20 10 0 0 0 1 2 3 4 5 6 7 8 0.0 1.0 Fig. 8 - Typ. Diode Forward Characteristics tp = 80μs 20 20 18 18 16 16 14 14 ICE = 12A VCE (V) VCE (V) Fig. 7 - Typ. IGBT Output Characteristics TJ = 175°C; tp = 80μs ICE = 24A 10 ICE = 48A 8 3.0 VF (V) VCE (V) 12 2.0 12 10 ICE = 48A 8 6 6 4 4 2 2 0 ICE = 12A ICE = 24A 0 5 10 15 20 5 10 VGE (V) 15 20 VGE (V) Fig. 10 - Typical VCE vs. VGE TJ = 25°C Fig. 9 - Typical VCE vs. VGE TJ = -40°C 120 20 18 100 16 T J = 25°C TJ = 175°C 80 12 ICE = 12A ICE (A) VCE (V) 14 ICE = 24A ICE = 48A 10 8 60 40 6 4 20 2 0 0 5 10 15 20 VGE (V) Fig. 11 - Typical VCE vs. VGE TJ = 175°C 4 www.irf.com © 2013 International Rectifier 0 5 10 15 VGE (V) Fig. 12 - Typ. Transfer Characteristics VCE = 50V; tp = 10μs July 17, 2013 IRGB4062DPbF/IRGP4062DPbF/IRGP4062D-EPbF 1800 1000 1600 1400 Energy (μJ) 1200 Swiching Time (ns) tdOFF EOFF 1000 800 EON 600 100 tdON tF 10 tR 400 200 0 1 0 10 20 30 40 50 60 10 20 30 40 50 IC (A) IC (A) Fig. 13 - Typ. Energy Loss vs. IC TJ = 175°C; L = 200μH; VCE = 400V, RG = 10; VGE = 15V Fig. 14 - Typ. Switching Time vs. IC TJ = 175°C; L = 200μH; VCE = 400V, RG = 10; VGE = 15V 1000 1600 1400 EON 1000 Swiching Time (ns) Energy (μJ) 1200 EOFF 800 600 tdOFF 100 tdON 400 tF tR 200 10 0 0 25 50 75 100 125 0 25 50 75 100 125 RG () Rg () Fig. 15 - Typ. Energy Loss vs. RG TJ = 175°C; L = 200μH; VCE = 400V, ICE = 24A; VGE = 15V Fig. 16 - Typ. Switching Time vs. RG TJ = 175°C; L = 200μH; VCE = 400V, ICE = 24A; VGE = 15V 40 45 RG = 10 40 35 35 30 RG = 22 IRR (A) IRR (A) 30 25 RG = 47 20 20 RG = 100 15 15 10 10 5 0 10 20 30 40 50 60 IF (A) Fig. 17 - Typ. Diode IRR vs. IF TJ = 175°C 5 25 www.irf.com © 2013 International Rectifier 0 25 50 75 100 125 RG ( Fig. 18 - Typ. Diode IRR vs. RG TJ = 175°C July 17, 2013 IRGB4062DPbF/IRGP4062DPbF/IRGP4062D-EPbF 45 4000 40 3500 35 22 QRR (nC) IRR (A) 10 3000 30 25 20 2500 47 1500 12A 1000 10 500 5 0 500 1000 0 1500 800 Time (μs) RG = 47 RG = 22 RG = 100 400 200 16 280 14 240 12 200 10 160 8 120 6 80 40 4 0 0 10 20 30 40 50 8 60 10 12 14 16 18 VGE (V) IF (A) Fig. 22 - VGE vs. Short Circuit Time VCC = 400V; TC = 25°C Fig. 21 - Typ. Diode ERR vs. IF TJ = 175°C 10000 16 VGE, Gate-to-Emitter Voltage (V) Capacitance (pF) 1500 Current (A) 600 1000 Fig. 20 - Typ. Diode QRR vs. diF/dt VCC = 400V; VGE = 15V; TJ = 175°C 1000 RG = 10 500 diF /dt (A/μs) diF /dt (A/μs) Fig. 19 - Typ. Diode IRR vs. diF/dt VCC = 400V; VGE = 15V; IF = 24A; TJ = 175°C Cies 1000 Coes 100 Cres 10 V CES = 300V 14 V CES = 400V 12 10 8 6 4 2 0 0 20 40 60 80 100 VCE (V) Fig. 23 - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz 6 24A 100 2000 15 Energy (μJ) 48A www.irf.com © 2013 International Rectifier 0 5 10 15 20 25 30 35 40 45 50 55 Q G, Total Gate Charge (nC) Fig. 24 - Typical Gate Charge vs. VGE ICE = 24A; L = 600μH July 17, 2013 IRGB4062DPbF/IRGP4062DPbF/IRGP4062D-EPbF 1 Thermal Response ( Z thJC ) D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 J R1 R1 J 1 C 2 1  Ri (°C/W) i (sec) 0.2329 0.000234 0.3631 2 0.007009 Ci= iRi Ci iRi SINGLE PULSE ( THERMAL RESPONSE ) 0.001 R2 R2 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) TO-220AB Thermal Response ( Z thJC ) 10 1 0.1 0.01 D = 0.50 0.20 0.10 0.05 0.02 0.01 J R1 R1 J 1 1 R2 R2 2 3 2 Ci= iRi Ci iRi 0.001 0.0001 1E-006 SINGLE PULSE ( THERMAL RESPONSE ) 1E-005 R3 R3 C  3 Ri (°C/W) i (sec) 0.476 0.000763 0.647 0.003028 0.406 0.023686 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) TO-220AB 7 www.irf.com © 2013 International Rectifier July 17, 2013 IRGB4062DPbF/IRGP4062DPbF/IRGP4062D-EPbF 1 Thermal Response ( Z thJC ) D = 0.50 0.20 0.1 0.10 0.05 J 0.02 0.01 R1 R1 J 1 0.01 R2 R2 C 2 1 2 Ci= iRi Ci iRi SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 Ri (°C/W) i (sec) 0.2782 0.000311 0.3715 0.006347  1E-005 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 27. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) TO-247 Thermal Response ( Z thJC ) 10 1 D = 0.50 0.20 0.10 0.05 0.1 0.02 J 0.01 0.01 R1 R1 J 1 1 R2 R2 2 3 2 Ci= iRi Ci iRi 0.001 SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 1E-005 0.0001 R3 R3 C  3 Ri (°C/W) i (sec) 0.693 0.001222 0.621 0.005254 0.307 0.038140 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 28. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) TO-247 8 www.irf.com © 2013 International Rectifier July 17, 2013 IRGB4062DPbF/IRGP4062DPbF/IRGP4062D-EPbF L L VC C D UT 0 80 V DU T 4 80V Rg 1K Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit d io d e clamp / DU T 4x DC V360V CC L - 5V DU T / D RIVER DUT VCC Rg Fig.C.T.3 - S.C. SOA Circuit R= Fig.C.T.4 - Switching Loss Circuit VCC ICM DUT VCC Rg Fig.C.T.5 - Resistive Load Circuit 9 www.irf.com © 2013 International Rectifier Fig.C.T.6 - BVCES Filter Circuit July 17, 2013 IRGB4062DPbF/IRGP4062DPbF/IRGP4062D-EPbF 600 30 600 25 500 60 tf 500 50 90% ICE 20 V CE 300 C 200 300 5 20 100 0 EOFF Loss 0.60 0 0 -100 11.70 Time(μs) 11.90 600 300 QRR ICE 500 10 tRR Peak IRR -20 VCE (V) -10 250 400 200 0 IRR (A) -10 12.30 Fig. WF2 - Typ. Turn-on Loss Waveform @ TJ = 175°C using Fig. CT.4 30 10% Peak IRR -30 V CE 300 150 200 100 100 50 0 -40 -50 -0.15 -0.05 0.05 0.15 0.25 time (μS) Fig. WF3 - Typ. Diode Recovery Waveform @ TJ = 175°C using Fig. CT.4 10 12.10 Time (μs) Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 175°C using Fig. CT.4 20 10 5% V CE EON -5 0.10 30 90% test 200 5% ICE -100 -0.40 C 10% ICE 100 0 40 ICE 15 10 5% V CE tr www.irf.com © 2013 International Rectifier ICE (A) VCE (V) ICE 400 VCE (V) 400 V CE C 0 -100 -5.00 0.00 5.00 -50 10.00 time (μS) Fig. WF4 - Typ. S.C. Waveform @ TJ = 25°C using Fig. CT.3 July 17, 2013 IRGB4062DPbF/IRGP4062DPbF/IRGP4062D-EPbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) TO-220AB Part Marking Information (;$03/( 7+,6,6$1,5) /27&2'( $66(0%/('21:: ,17+($66(0%/