IRGP4063DPbF
IRGP4063D-EPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
•
•
•
•
•
•
•
•
•
•
Low VCE (ON) Trench IGBT Technology
Low switching losses
Maximum Junction temperature 175 °C
5 μS short circuit SOA
Square RBSOA
100% of the parts tested for 4X rated current (ILM)
Positive VCE (ON) Temperature co-efficient
Ultra fast soft Recovery Co-Pak Diode
Tight parameter distribution
Lead Free Package
C
VCES = 600V
IC = 48A, TC = 100°C
tSC ≥ 5μs, TJ(max) = 175°C
G
VCE(on) typ. = 1.65V
E
n-channel
Benefits
• High Efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
Low VCE (ON) and Low Switching losses
• Rugged transient Performance for increased reliability
• Excellent Current sharing in parallel operation
• Low EMI
C
G
E
C
G
C
G
IRGP4063D-EPbF
IRGP4063DPbF
G
Gate
E
C
Collector
E
Emitter
Absolute Maximum Ratings
Max.
Units
V CES
Collector-to-Emitter Voltage
Parameter
600
V
IC @ TC = 25°C
Continuous Collector Current
96
IC @ TC = 100°C
Continuous Collector Current
48
ICM
Pulse Collector Current
ILM
Clamped Inductive Load Current
IF @ TC = 25°C
Diode Continous Forward Current
200
c
192
A
96
IF @ TC = 100°C
Diode Continous Forward Current
IFM
Diode Maximum Forward Current
e
192
V GE
Continuous Gate-to-Emitter Voltage
±20
Transient Gate-to-Emitter Voltage
±30
P D @ TC = 25°C
Maximum Power Dissipation
330
P D @ TC = 100°C
Maximum Power Dissipation
170
TJ
Operating Junction and
TSTG
Storage Temperature Range
48
V
W
-55 to +175
°C
Soldering Temperature, for 10 sec.
300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
Thermal Resistance
Min.
Typ.
Max.
Units
RθJC (IGBT)
Thermal Resistance Junction-to-Case-(each IGBT)
Parameter
–––
–––
0.45
°C/W
RθJC (Diode)
Thermal Resistance Junction-to-Case-(each Diode)
–––
–––
0.92
RθCS
Thermal Resistance, Case-to-Sink (flat, greased surface)
–––
0.24
–––
RθJA
Thermal Resistance, Junction-to-Ambient (typical socket mount)
–––
–––
40
1
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© 2013 International Rectifier
March 15, 2013
IRGP4063DPbF/IRGP4063D-EPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)CES
Collector-to-Emitter Breakdown Voltage
Min.
Typ.
600
—
Max. Units
—
ΔV(BR)CES/ΔTJ
Temperature Coeff. of Breakdown Voltage
—
0.30
—
—
1.65
2.14
VCE(on)
Collector-to-Emitter Saturation Voltage
—
2.0
—
—
2.05
—
VGE(th)
Gate Threshold Voltage
4.0
—
6.5
ΔVGE(th)/ΔTJ
Threshold Voltage temp. coefficient
—
-21
—
gfe
ICES
Forward Transconductance
—
32
—
Collector-to-Emitter Leakage Current
—
1.0
150
—
450
1000
—
1.95
2.91
—
1.45
—
—
—
±100
VFM
Diode Forward Voltage Drop
IGES
Gate-to-Emitter Leakage Current
V
Conditions
VGE = 0V, IC = 150μA
Ref.Fig
f
CT6
V/°C VGE = 0V, IC = 1mA (25°C-175°C)
IC = 48A, VGE = 15V, TJ = 25°C
V
CT6
5,6,7
IC = 48A, VGE = 15V, TJ = 150°C
9,10,11
IC = 48A, VGE = 15V, TJ = 175°C
V
VCE = VGE, IC = 1.4mA
9, 10,
mV/°C VCE = VGE, IC = 1.0mA (25°C - 175°C)
S VCE = 50V, IC = 48A, PW = 80μs
μA
VGE = 0V, VCE = 600V
V
IF = 48A
11, 12
VGE = 0V, VCE = 600V, TJ = 175°C
8
IF = 48A, TJ = 175°C
nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Min.
Typ.
Qg
Total Gate Charge (turn-on)
Parameter
—
95
Max. Units
140
Qge
Gate-to-Emitter Charge (turn-on)
—
28
42
Qgc
Gate-to-Collector Charge (turn-on)
—
35
53
Eon
Turn-On Switching Loss
—
625
1141
Eoff
Turn-Off Switching Loss
—
1275
1481
Etotal
Total Switching Loss
—
1900
2622
td(on)
Turn-On delay time
—
60
78
tr
Rise time
—
40
56
Conditions
Ref.Fig
IC = 48A
nC
24
VGE = 15V
CT1
VCC = 400V
IC = 48A, VCC = 400V, VGE = 15V
μJ
CT4
RG = 10Ω, L = 200μH, LS = 150nH, TJ = 25°C
Energy losses include tail & diode reverse recovery
IC = 48A, VCC = 400V, VGE = 15V
ns
CT4
RG = 10Ω, L = 200μH, LS = 150nH, TJ = 25°C
td(off)
Turn-Off delay time
—
145
176
tf
Fall time
—
35
46
Eon
Turn-On Switching Loss
—
1625
—
Eoff
Turn-Off Switching Loss
—
1585
—
Etotal
Total Switching Loss
—
3210
—
Energy losses include tail & diode reverse recovery
td(on)
Turn-On delay time
—
55
—
IC = 48A, VCC = 400V, VGE = 15V
tr
Rise time
—
45
—
td(off)
Turn-Off delay time
—
165
—
tf
Fall time
—
45
—
Cies
Input Capacitance
—
3025
—
Coes
Output Capacitance
—
245
—
VCC = 30V
Cres
Reverse Transfer Capacitance
—
90
—
f = 1.0Mhz
TJ = 175°C, IC = 192A
4
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
VCC = 480V, Vp =600V
CT2
SCSOA
Short Circuit Safe Operating Area
5
IC = 48A, VCC = 400V, VGE=15V
μJ
ns
RG=10Ω, L=200μH, LS=150nH, TJ = 175°C
f
13, 15
CT4
WF1, WF2
14, 16
RG = 10Ω, L = 200μH, LS = 150nH
CT4
TJ = 175°C
WF1
WF2
pF
VGE = 0V
23
Rg = 10Ω, VGE = +15V to 0V
—
—
μs
VCC = 400V, Vp =600V
22, CT3
Rg = 10Ω, VGE = +15V to 0V
Erec
trr
Reverse Recovery Energy of the Diode
Irr
WF4
—
μJ
TJ = 175°C
115
—
ns
VCC = 400V, IF = 48A
40
—
A
VGE = 15V, Rg = 10Ω, L =200μH, Ls = 150nH
—
845
Diode Reverse Recovery Time
—
Peak Reverse Recovery Current
—
17, 18, 19
20, 21
WF3
Notes:
VCC = 80% (VCES), VGE = 20V, L = 200μH, RG = 10Ω.
This is only applied to TO-247AC package.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
2
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© 2013 International Rectifier
March 15, 2013
IRGP4063DPbF/IRGP4063D-EPbF
100
350
90
300
80
250
70
200
Ptot (W)
IC (A)
60
50
40
150
30
100
20
50
10
0
0
0
25
50
75
100 125 150 175 200
0
25
50
75
100 125 150 175 200
T C (°C)
T C (°C)
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
Fig. 2 - Power Dissipation vs. Case
Temperature
1000
1000
100
10μsec
100
1msec
10
IC (A)
IC (A)
100μsec
DC
10
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
100
1
1000
10
VCE (V)
200
180
180
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
120
160
100
80
120
100
80
60
60
40
40
20
20
0
0
0
2
4
6
8
10
VCE (V)
Fig. 5 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80μs
3
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
140
ICE (A)
ICE (A)
Fig. 4 - Reverse Bias SOA
TJ = 175°C; VGE =15V
200
140
1000
VCE (V)
Fig. 3 - Forward SOA
TC = 25°C, TJ ≤ 175°C; VGE =15V
160
100
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0
2
4
6
8
10
VCE (V)
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80μs
March 15, 2013
IRGP4063DPbF/IRGP4063D-EPbF
200
200
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
180
160
160
140
120
-40°c
25°C
175°C
120
IF (A)
ICE (A)
140
180
100
100
80
80
60
60
40
40
20
20
0
0
0
2
4
6
8
10
0.0
1.0
2.0
Fig. 8 - Typ. Diode Forward Characteristics
tp = 80μs
20
20
18
18
16
16
14
14
ICE = 24A
ICE = 48A
VCE (V)
VCE (V)
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 175°C; tp = 80μs
10
ICE = 96A
8
12
ICE = 24A
ICE = 48A
10
ICE = 96A
8
6
6
4
4
2
2
0
0
5
10
15
20
5
10
VGE (V)
18
180
16
160
14
140
ICE = 24A
ICE = 48A
ICE = 96A
8
ICE (A)
VCE (V)
200
10
20
Fig. 10 - Typical VCE vs. VGE
TJ = 25°C
20
12
15
VGE (V)
Fig. 9 - Typical VCE vs. VGE
TJ = -40°C
T J = 25°C
T J = 175°C
120
100
80
6
60
4
40
2
20
0
0
5
10
15
20
VGE (V)
Fig. 11 - Typical VCE vs. VGE
TJ = 175°C
4
4.0
VF (V)
VCE (V)
12
3.0
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© 2013 International Rectifier
0
5
10
15
VGE (V)
Fig. 12 - Typ. Transfer Characteristics
VCE = 50V; tp = 10μs
March 15, 2013
IRGP4063DPbF/IRGP4063D-EPbF
6000
1000
5000
Swiching Time (ns)
EOFF
Energy (μJ)
4000
EON
3000
2000
tdOFF
100
tdON
tF
tR
1000
0
10
0
50
100
150
0
20
40
60
80
100
IC (A)
IC (A)
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 200μH; VCE = 400V, RG = 10Ω; VGE = 15V
Fig. 14 - Typ. Switching Time vs. IC
TJ = 175°C; L = 200μH; VCE = 400V, RG = 10Ω; VGE = 15V
5000
1000
4500
tdOFF
EOFF
Swiching Time (ns)
Energy (μJ)
4000
EON
3500
3000
2500
tR
tdON
100
tF
2000
1500
1000
10
0
25
50
75
100
125
0
25
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 200μH; VCE = 400V, ICE = 48A; VGE = 15V
100
125
Fig. 16 - Typ. Switching Time vs. RG
TJ = 175°C; L = 200μH; VCE = 400V, ICE = 48A; VGE = 15V
45
45
40
40
RG = 10Ω
35
35
30
RG = 22Ω
25
20
IRR (A)
IRR (A)
75
RG (Ω)
Rg (Ω)
RG = 47Ω
15
RG = 100Ω
10
30
25
20
15
5
0
10
0
20
40
60
80
100
IF (A)
Fig. 17 - Typ. Diode IRR vs. IF
TJ = 175°C
5
50
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0
25
50
75
100
125
RG (Ω)
Fig. 18 - Typ. Diode IRR vs. RG
TJ = 175°C
March 15, 2013
IRGP4063DPbF/IRGP4063D-EPbF
45
4000
40
3500
96A
3000
QRR (nC)
IRR (A)
35
30
25
2500
100Ω
22Ω
47Ω
2000
20
10Ω
48A
24A
1500
15
1000
10
0
200
400
600
800
0
1000
500
diF /dt (A/μs)
1500
Fig. 20 - Typ. Diode QRR vs. diF/dt
VCC = 400V; VGE = 15V; TJ = 175°C
Fig. 19 - Typ. Diode IRR vs. diF/dt
VCC = 400V; VGE = 15V; IF = 48A; TJ = 175°C
18
400
RG = 10Ω
16
350
RG = 22Ω
14
300
12
250
10
200
8
150
6
100
900
800
1000
diF /dt (A/μs)
500
400
RG = 47Ω
300
RG = 100Ω
200
100
0
50
4
0
20
40
60
80
100
8
10
12
IF (A)
16
18
Fig. 22 - VGE vs. Short Circuit Time
VCC = 400V; TC = 25°C
10000
16
VGE, Gate-to-Emitter Voltage (V)
Cies
Capacitance (pF)
14
VGE (V)
Fig. 21 - Typ. Diode ERR vs. IF
TJ = 175°C
1000
Coes
100
Cres
10
V CES = 300V
14
V CES = 400V
12
10
8
6
4
2
0
0
20
40
60
80
100
VCE (V)
6
Current (A)
Energy (μJ)
600
Time (μs)
700
Fig. 23 - Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
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0
25
50
75
100
Q G, Total Gate Charge (nC)
Fig. 24 - Typical Gate Charge vs. VGE
ICE = 48A; L = 600μH
March 15, 2013
IRGP4063DPbF/IRGP4063D-EPbF
1
Thermal Response ( Z thJC )
D = 0.50
0.1
0.20
0.10
0.05
0.02
0.01
0.01
τJ
R1
R1
τJ
τ1
SINGLE PULSE
( THERMAL RESPONSE )
0.001
R2
R2
τ2
τ1
R3
R3
τ3
τ2
τC
τ
τ3
Ri (°C/W) τi (sec)
0.0872 0.000114
0.1599 0.001520
0.2020
Ci= τi/Ri
Ci i/Ri
0.020330
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
Thermal Response ( Z thJC )
10
1
D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
0.01
τJ
SINGLE PULSE
( THERMAL RESPONSE )
0.001
0.0001
1E-006
1E-005
0.0001
R1
R1
τJ
τ1
τ1
R2
R2
τ2
R3
R3
τ3
τ2
Ci= τi/Ri
Ci i/Ri
τC
τ
τ3
Ri (°C/W) τi (sec)
0.2774 0.000908
0.3896
0.2540
0.003869
0.030195
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
7
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March 15, 2013
IRGP4063DPbF/IRGP4063D-EPbF
L
L
DUT
0
VCC
80 V +
-
1K
DUT
VCC
Rg
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
diode clamp /
DUT
L
4X
DC
-5V
VCC
DUT /
DRIVER
DUT
VCC
Rg
RSH
Fig.C.T.3 - S.C. SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
C force
R=
VCC
ICM
100K
D1
DUT
C sense
VCC
G force
Rg
22K
DUT
0.0075μF
E sense
E force
Fig.C.T.5 - Resistive Load Circuit
8
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© 2013 International Rectifier
Fig.C.T.6 - BVCES Filter Circuit
March 15, 2013
140
700
140
600
120
600
120
500
100
500
400
80
400
60
90% ICE
200
40
tr
TEST
CURRENT
300
20
5% ICE
0
EOFF Loss
-100
-0.40
0.10
0.60
200
40
100
0
-20
1.10
0
-100
6.20
6.40
600
600
500
500
40
QRR
30
VCE (V)
10
0
10%
Peak
IRR
Peak
IRR
ICE
VCE
400
tRR
20
IRR (A)
6.80
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4
50
400
300
300
200
200
100
100
0
-30
-0.05
0.05
0.15
0.25
time (μS)
Fig. WF3 - Typ. Diode Recovery Waveform
@ TJ = 175°C using Fig. CT.4
9
6.60
-20
7.00
Time (μs)
60
-40
-0.15
20
EON
Fig. WF1 - Typ. Turn-off Loss Waveform
@ TJ = 175°C using Fig. CT.4
-20
5% V CE
10% test
current
Time(μs)
-10
60
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© 2013 International Rectifier
ICE (A)
0
80
90% test
5% V CE
100
100
ICE (A)
tf
300
VCE (V)
700
I CE (A)
VCE (V)
IRGP4063DPbF/IRGP4063D-EPbF
0
-100
-5.00
0.00
5.00
-100
10.00
time (μS)
Fig. WF4 - Typ. S.C. Waveform
@ TJ = 25°C using Fig. CT.3
March 15, 2013
IRGP4063DPbF/IRGP4063D-EPbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
EXAMPLE: THIS IS AN IRFPE30
WITH AS SEMBLY
LOT CODE 5657
ASS EMBLED ON WW 35, 2001
IN THE AS SEMBLY LINE "H"
Note: "P" in as sembly line pos ition
indicates "Lead-Free"
INTERNAT IONAL
RECT IFIER
LOGO
PART NUMBER
IRFPE30
56
135H
57
ASS EMBLY
LOT CODE
DATE CODE
YEAR 1 = 2001
WEEK 35
LINE H
TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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© 2013 International Rectifier
March 15, 2013
IRGP4063DPbF/IRGP4063D-EPbF
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
TO-247AD Part Marking Information
E X A M P L E : T H IS IS A N IR G P 3 0 B 1 2 0 K D -E
W IT H A S S E M B L Y
L OT COD E 5657
AS S E M B L E D O N W W 35 , 2 00 0
IN T H E A S S E M B L Y L IN E "H "
IN T E R N A T IO N A L
R E C T IF IE R
LOGO
N o te : "P " in as s e m b ly lin e p o s itio n
in d icate s "L e ad - F r ee "
P AR T N U M B E R
56
03 5H
57
AS S E M B L Y
L O T COD E
D AT E CO D E
YE AR 0 = 2 0 00
WE E K 35
L IN E H
TO-247AD package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd.., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
11
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© 2013 International Rectifier
March 15, 2013