IRGP4063D1PBF

IRGP4063D1PbF IRGP4063D1-EPbF   Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C   IC = 60A, TC =100°C   G G tSC 5µs, TJ(max) = 175°C G VCE(ON) typ. = 1.65V @ IC = 48A E E n-channel Applica ons  • Industrial Motor Drive  • Inverters  • UPS   • Welding  G Gate C G IRGP4063D1PbF  C Collector Features Square RBSOA and maximum junction temperature 175°C Base part number Package Type IRGP4063D1PbF IRGP4063D1-EPbF TO-247AC TO-247AD E G  IRGP4063D1‐EPbF  E Emitter Benefits Low VCE(ON) and switching losses Positive VCE (ON) temperature coefficient 5µs short circuit SOA Lead-free, RoHS compliant C High efficiency in a wide range of applications and switching frequencies Improved reliability due to rugged hard switching performance and higher power capability Excellent current sharing in parallel operation Enables short circuit protection scheme Environmentally friendly Standard Pack Form Quantity Tube 25 Tube 25 Orderable Part Number IRGP4063D1PbF IRGP4063D1-EPbF Absolute Maximum Ratings VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Parameter Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE = 15V Clamped Inductive Load Current, VGE = 20V  Diode Continous Forward Current Diode Continous Forward Current Diode Maximum Forward Current  Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw Max. 600 100 60 200 192 30 15 120 ±20 ±30 330 170 -40 to +175 Units V A V W °C 300 (0.063 in. (1.6mm) from case) 10 lbf·in (1.1 N·m)       Thermal Resistance Parameter Min. Typ. Max. Units ––– ––– 0.45 RJC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT)  ––– ––– 2.4 RJC (Diode) Thermal Resistance Junction-to-Case-(each Diode)  °C/W Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.24 ––– RCS Thermal Resistance, Junction-to-Ambient (typical socket mount) RJA ––– ––– 40 1 www.irf.com © 2013 International Rectifier June 24, 2013 IRGP4063D1PbF/IRGP4063D1-EPbF   Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Min. Typ. Max. Parameter 600 — — V(BR)CES Collector-to-Emitter Breakdown Voltage — 0.3 — Temperature Coeff. of Breakdown Voltage V(BR)CES/TJ — 1.65 2.14 VCE(on)   Collector-to-Emitter Saturation Voltage   — 2.05 — 4.0 — 6.5 Gate Threshold Voltage VGE(th) — -21 — VGE(th)/TJ Threshold Voltage temp. coefficient — 32 — gfe Forward Transconductance — 1.0 200 ICES Collector-to-Emitter Leakage Current — 850 — — 1.9 2.4 VFM Diode Forward Voltage Drop — 1.2 — Gate-to-Emitter Leakage Current — — ±100 IGES Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Total Gate Charge (turn-on) — 100 150 Qg Qge Gate-to-Emitter Charge (turn-on) — 25 40 Qgc Gate-to-Collector Charge (turn-on) — 40 60 Eon Turn-On Switching Loss — 1.4 2.3 Eoff Turn-Off Switching Loss — 1.1 2.0 Etotal Total Switching Loss — 2.5 4.3 td(on) Turn-On delay time — 60 80 Rise time — 50 70 tr td(off) Turn-Off delay time — 160 185 tf Fall time — 30 50 Eon Turn-On Switching Loss — 2.0 — Eoff Turn-Off Switching Loss — 1.5 — Etotal Total Switching Loss — 3.5 — td(on) Turn-On delay time — 50 — Rise time — 55 — tr td(off) Turn-Off delay time — 165 — tf Fall time — 55 — Cies Input Capacitance — 2900 — Coes Output Capacitance — 200 — Cres Reverse Transfer Capacitance — 90 — RBSOA   Units Conditions V VGE = 0V, IC = 100µA V/°C VGE=0V, IC=1mA (25°C-175°C) IC = 48A, VGE = 15V, TJ = 25°C V IC = 48A,VGE = 15V, TJ = 175°C V VCE = VGE, IC = 1.4mA mV/°C VCE=VGE, IC=1.4mA (25°C-175°C) S VCE = 50V, IC = 48A, PW = 20µs V = 0V, VCE = 600V µA   GE VGE = 0V, VCE = 600V,TJ = 175°C IF = 8A V IF = 8A, TJ = 175°C nA VGE = ±20V   Units nC mJ ns mJ ns pF FULL SQUARE Reverse Bias Safe Operating Area SCSOA Short Circuit Safe Operating Area 5 — — µs Erec trr Irr Reverse Recovery Energy of the Diode Diode Reverse Recovery Time Peak Reverse Recovery Current — — — 245 80 20 — — — µJ ns A Conditions IC = 48A VGE = 15V VCC = 400V IC = 48A, VCC = 400V, VGE = 15V RG = 10, L = 485µH, TJ = 25°C Energy losses include tail & diode reverse recovery  IC = 48A, VCC = 400V, VGE=15V RG=10, L= 485µH, TJ = 175°C Energy losses include tail & diode reverse recovery  VGE = 0V VCC = 30V f = 1.0Mhz TJ = 175°C, IC = 192A VCC = 480V, Vp ≤ 600V Rg = 50, VGE = +20V to 0V VCC = 400V, Vp ≤600V Rg = 50, VGE = +15V to 0V TJ = 175°C VCC = 400V, IF = 48A VGE = 15V, Rg = 10, L = 485µH Notes: VCC = 80% (VCES), VGE = 20V, L = 50µH, RG = 50.  R is measured at TJ of approximately 90°C. Refer to AN-1086 for guidelines for measuring V(BR)CES safely.  Maximum limits are based on statistical sample size characterization. Pulse width limited by max. junction temperature. Values influenced by parasitic L and C in measurement. 2 www.irf.com © 2013 International Rectifier June 24, 2013 IRGP4063D1PbF/IRGP4063D1-EPbF   For both: Duty cycle : 50% Tj = 175°C Tcase = 100°C Gate drive as specified Power Dissipation = 167W Load Current ( A ) 100 80 60 Square Wave: VCC 40 I Diode as specified 20 0.1 1 10 100 f , Frequency ( kHz ) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 350 120 300 100 250 Ptot (W) IC (A) 80 60 40 200 150 100 20 50 0 0 25 50 75 100 125 150 25 175 150 175 100 10 IC (A) IC, Collector-to -Emitter Current (A) 100µsec 10msec 1 10 0.1 Tc = 25°C Tj = 175°C Single Pulse DC 1 0.01 1 3 125 1000 OPERATION IN THIS AREA LIMITED BY V (on) CE 1msec 100 Fig. 3 - Power Dissipation vs. Case Temperature Fig. 2 - Maximum DC Collector Current vs. 100 75 TC (°C) TC (°C) 1000 50 10 100 1000 10 100 VCE , Collector-to-Emitter Voltage (V) VCE (V) Fig. 4 - Forward SOA TC = 25°C, TJ @ 175°C; VGE =15V Fig. 5 - Reverse Bias SOA TJ = 175°C; VGE = 20V www.irf.com © 2013 International Rectifier 1000 June 24, 2013 IRGP4063D1PbF/IRGP4063D1-EPbF   200 200 VGE = 18V VGE = 15V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V VGE = 8.0V 100 100 50 50 0 0 0 2 4 VGE = 12V 150 VGE = 10V ICE (A) 150 ICE (A) VGE = 18V 6 8 0 10 2 4 6 8 10 V CE (V) V CE (V) Fig. 6 - Typ. IGBT Output Characteristics TJ = -40°C; tp = 20µs Fig. 7 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 20µs 200 200 VGE = 18V VGE = 15V 150 150 VGE = 10V IF (A) ICE (A) VGE = 12V VGE = 8.0V 100 100 TJ =175°C TJ = 25°C 50 50 TJ = -40°C 0 0 0 2 4 6 8 0.0 10 1.0 2.0 Fig. 8 - Typ. IGBT Output Characteristics TJ = 175°C; tp = 20µs 5.0 6.0 Fig. 9 - Typ. Diode Forward Characteristics tp = 20µs 8 8 6 6 ICE = 24A ICE = 48A VCE (V) VCE (V) 4.0 V F (V) V CE (V) ICE = 96A 4 ICE = 24A ICE = 48A 4 ICE = 96A 2 2 0 0 6 8 10 12 14 16 18 20 V GE (V) Fig. 10 - Typical VCE vs. VGE TJ = -40°C 4 3.0 www.irf.com © 2013 International Rectifier 6 8 10 12 14 16 18 20 V GE (V) Fig. 111 - Typical VCE vs. VGE TJ = 25°C June 24, 2013 IRGP4063D1PbF/IRGP4063D1-EPbF   200 VCE (V) 6 IC, Collector-to-Emitter Current(A) 8 ICE = 24A ICE = 48A ICE = 96A 4 2 TJ = 25°C TJ = 175°C 150 100 50 0 0 6 8 10 12 14 16 18 6 20 8 10 12 14 16 V GE, Gate-to-Emitter Voltage (V) V GE (V) Fig. 12 - Typical VCE vs. VGE TJ = 175°C Fig. 13 - Typ. Transfer Characteristics VCE = 50V; tp = 20µs 7 1000 6 EON Swiching Time (ns) Energy (mJ) 5 4 3 EOFF 2 tdOFF 100 tF tdON tR 1 0 0 20 40 60 80 100 10 120 0 20 40 IC (A) Fig. 14 - Typ. Energy Loss vs. IC TJ = 175°C; L = 485µH; VCE = 400V, RG = 10; VGE = 15V 80 100 120 Fig. 15 - Typ. Switching Time vs. IC TJ = 175°C; L = 485µH; VCE = 400V, RG = 10; VGE = 15V 1000 6 5 EOFF Swiching Time (ns) Energy (mJ) 60 IC (A) EON 4 3 tdOFF tF tR 100 tdON 2 10 1 0 20 40 60 80 100 120 RG () Fig. 16 - Typ. Energy Loss vs. RG TJ = 175°C; L = 485µH; VCE = 400V, ICE = 48A; VGE = 15V 5 www.irf.com © 2013 International Rectifier 0 20 40 60 80 100 120 RG () Fig. 17 - Typ. Switching Time vs. RG TJ = 175°C; L = 485µH; VCE = 400V, ICE = 48A; VGE = 15V June 24, 2013 IRGP4063D1PbF/IRGP4063D1-EPbF   26 22 24 20 22 RG = 10 18 RG = 22 IRR (A) IRR (A) 20 18 RG = 47 16 16 14 14 12 RG = 100 12 10 10 20 30 40 50 60 70 80 90 100 0 20 40 60 IF (A) 100 120 RG () Fig. 19 - Typ. Diode IRR vs. RG TJ = 175°C Fig. 18 - Typ. Diode IRR vs. IF TJ = 175°C 22 80 1600 1500 20 1400 96A 18 QRR (nC) IRR (A) 1300 16 48A 1200  1100 24A 1000  900 14   800 700 12 600 300 400 500 600 700 800 900 1000 1100 200 400 600 diF /dt (A/µs) 800 20 300 1000 RG =10 250 Tsc 16 800 RG = 22 Isc RG = 47 150 12 600 8 400 4 200 RG = 100 100 50 0 0 0 20 40 60 80 100 120 IF (A) Fig. 22 - Typ. Diode ERR vs. IF TJ = 175°C www.irf.com © 2013 International Rectifier Current (A) Time (µs) 200 Energy (µJ) 1200 Fig. 21 - Typ. Diode QRR vs. diF/dt VCC = 400V; VGE = 15V; TJ = 175°C Fig. 20 - Typ. Diode IRR vs. diF/dt VCC = 400V; VGE = 15V; IF = 48A; TJ = 175°C 6 1000 diF /dt (A/µs) 0 8 10 12 14 16 18 VGE (V) Fig. 23 - VGE vs. Short Circuit Time VCC = 400V; TC = 25°C June 24, 2013 IRGP4063D1PbF/IRGP4063D1-EPbF   10000 18 VGE, Gate-to-Emitter Voltage (V) Capacitance (pF) Cies 1000 100 Coes Cres 10 0 100 200 300 400 16 VCES = 400V 14 VCES = 300V 12 10 8 6 4 2 0 500 0 20 VCE (V) 40 60 80 100 120 Q G, Total Gate Charge (nC) Fig. 24 - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz Fig. 25 - Typical Gate Charge vs. VGE ICE = 48A 1 Thermal Response ( ZthJC ) D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 0.01 J 0.0001 1E-006 1E-005 J 1 R2 R2 R3 R3 R4 R4 C 2 1 2 3 3 4 C 4 Ci= iRi Ci= iRi SINGLE PULSE ( THERMAL RESPONSE ) 0.001 R1 R1 Ri (°C/W) I (sec) 0.0120 0.000012 0.1158 0.00013 0.1820 0.00379 0.1399 0.02387 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 27. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) Thermal Response ( ZthJC ) 10 1 D = 0.50 0.20 0.10 0.1 J 0.02 0.01 0.01 0.001 1E-006 R1 R1 0.05 SINGLE PULSE ( THERMAL RESPONSE ) 1E-005 J 1 R2 R2 R3 R3 R4 R4 C 1 2 2 3 3 4 4 Ci= iRi Ci= iRi 0.0001 C Ri (°C/W) I (sec) 0.1343 0.00009 0.7058 0.00032 1.0181 0.00327 0.5434 0.03079 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 28. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) 7 www.irf.com © 2013 International Rectifier June 24, 2013 IRGP4063D1PbF/IRGP4063D1-EPbF   L 80 V + - DUT VCC Rg Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit diode clamp / DUT L 4X DC VCC -5V DUT / DRIVER DUT VCC Rg RSH Fig.C.T.4 - Switching Loss Circuit Fig.C.T.3 - S.C. SOA Circuit C force R = VCC ICM 100K D1 DUT C sense VCC Rg 22K G force DUT 0.0075µF E sense E force Fig.C.T.5 - Resistive Load Circuit 8 www.irf.com © 2013 International Rectifier Fig.C.T.6 - BVCES Filter Circuit June 24, 2013 IRGP4063D1PbF/IRGP4063D1-EPbF   tf 600 120 120 500 100 400 80 90% ICE 300 60 200 ICE (A) 100 VCE (V) 500 tr 100 20 5% ICE 0 60 40 200 Eoff Loss -2 -1 0 1 2 -20 3 4 20 5% VCE 0 0 Eon Loss -100 -3 5 -2 -1 0 1 2 3 -20 4 time (µs) time(µs) Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 175°C using Fig. CT.4 Fig. WF2 - Typ. Turn-on Loss Waveform @ TJ = 175°C using Fig. CT.4 60 1200 600 QRR 45 VCE 500 30 1000 400 800 300 600 15 0 -15 Peak IRR -30 -1.50 -0.50 Ice (A) tRR Vce (V) IF (A) 90% ICE 10% ICE 100 0 -100 80 300 40 5% VCE TEST CURRENT 400 ICE (A) 600 140 VCE (V) 700 ICE 200 400 200 100 10% Peak IRR 0.50 1.50 2.50 0 0 3.50 time (µS) -200 -100 -1 0 1 2 3 4 5 Time (uS) Fig. WF3 - Typ. Diode Recovery Waveform @ TJ = 175°C using Fig. CT.4 9 www.irf.com © 2013 International Rectifier Fig. WF4 - Typ. S.C. Waveform @ TJ = 25°C using Fig. CT.3 June 24, 2013 IRGP4063D1PbF/IRGP4063D1-EPbF   TO-247AC Package Outline Dimensions are shown in millimeters (inches) E Q A A E2/2 "A" A2 E2 2X D B L1 "A" L SEE VIEW"B" 2x b2 3x b Ø .010 BA c b4 e A1 2x LEAD TIP ØP Ø.010 B A -A- S D1 VIEW: "B" THERMAL PAD PLATING BASEMETAL E1 Ø.010 (c) B A VIEW: "A" - "A" (b, b2, b4) SECTION: C-C, D-D, E-E TO-247AC Part Marking Information Notes: This part marking information applies to devices produced after 02/26/2001 EXAMPLE: THIS IS AN IRFPE30 WITH ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2001 IN THE ASSEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INTERNATIONAL RECTIFIER LOGO PART NUMBER IRFPE30 56 135H 57 ASSEMBLY LOT CODE DATE CODE YEAR 1 = 2001 WEEK 35 LINE H TO-247AC package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com © 2013 International Rectifier June 24, 2013 IRGP4063D1PbF/IRGP4063D1-EPbF   TO-247AD Package Outline Dimensions are shown in millimeters (inches) TO-247AD Part Marking Information EXAM PLE: T H IS IS A N IR G P 3 0 B 1 2 0 K D - E W IT H A S S E M B L Y LO T C O D E 5657 ASSEM BLED O N W W 35, 2000 IN T H E A S S E M B L Y L IN E "H " PART N U M BER IN T E R N A T IO N A L R E C T IF IE R LO G O N o te : "P " in a s s e m b ly lin e p o s itio n in d ic a t e s "L e a d - F re e " 56 ASSEM B LY LO T C O D E 035H 57 D A TE C O D E YE A R 0 = 20 0 0 W EEK 35 L IN E H TO-247AD package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 11 www.irf.com © 2013 International Rectifier June 24, 2013 IRGP4063D1PbF/IRGP4063D1-EPbF   Qualification Information† Industrial (per JEDEC JESD47F) †† Qualification Level Moisture Sensitivity Level TO-247AC N/A TO-247AD Yes RoHS Compliant † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ †† Applicable version of JEDEC standard at the time of product release. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 101N Sepulveda., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 12 www.irf.com © 2013 International Rectifier June 24, 2013