IRGP4066DPBF

PD - 97576 IRGP4066DPbF IRGP4066D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • C Low VCE (ON) Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 5 μS short circuit SOA Square RBSOA 100% of The Parts Tested for ILM Positive VCE (ON) Temperature Coefficient Tight Parameter Distribution Lead Free Package VCES = 600V IC(Nominal) = 75A tSC ≥ 5μs, TJ(max) = 175°C G VCE(on) typ. = 1.70V E n-channel Benefits C C • High Efficiency in a Wide Range of Applications • Suitable for a Wide Range of Switching Frequencies due to Low VCE (ON) and Low Switching Losses • Rugged Transient Performance for Increased Reliability • Excellent Current Sharing in Parallel Operation E C G E C G TO-247AC IRGP4066DPbF G Gate TO-247AD IRGP4066D-EPbF C Collector E Emitter Absolute Maximum Ratings Max. Units VCES Collector-to-Emitter Voltage Parameter 600 V IC @ TC = 25°C Continuous Collector Current 140 IC @ TC = 100°C INOMINAL Continuous Collector Current 90 ICM Nominal Current Pulse Collector Current, VGE = 15V 225 ILM Clamped Inductive Load Current, VGE = 20V IF @ TC = 25°C Diode Continous Forward Current IF @ TC = 100°C IFM Diode Continous Forward Current Diode Maximum Forward Current VGE Continuous Gate-to-Emitter Voltage ±20 Transient Gate-to-Emitter Voltage ±30 PD @ TC = 25°C Maximum Power Dissipation 454 PD @ TC = 100°C Maximum Power Dissipation 227 TJ Operating Junction and TSTG Storage Temperature Range 75 c A 300 140 90 d 300 V W -55 to +175 °C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m) Thermal Resistance Parameter RθJC (IGBT) f f Min. Typ. Max. Units ––– ––– 0.33 °C/W ––– ––– 1.0 RθJC (Diode) Thermal Resistance Junction-to-Case-(each IGBT) Thermal Resistance Junction-to-Case-(each Diode) RθCS Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.24 ––– RθJA Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– ––– 40 1 www.irf.com 10/08/2010 IRGP4066DPbF/IRGP4066D-EPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Min. Typ. Max. Units V(BR)CES Collector-to-Emitter Breakdown Voltage Parameter 600 — — V ΔV(BR)CES/ΔTJ Temperature Coeff. of Breakdown Voltage — 0.30 — V/°C — 1.70 2.10 VCE(on) Collector-to-Emitter Saturation Voltage — 2.0 — — 2.1 — VGE(th) Gate Threshold Voltage 4.0 — 6.5 ΔVGE(th)/ΔTJ Threshold Voltage temp. coefficient — -21 — gfe ICES Forward Transconductance — 50 — Collector-to-Emitter Leakage Current — 1.0 100 VFM IGES Diode Forward Voltage Drop Gate-to-Emitter Leakage Current — 1040 — — 2.23 3.0 — 1.8 — — — ±200 Conditions VGE = 0V, IC = 100μA e VGE = 0V, IC = 2.0mA (25°C-175°C) d d = 175°C d IC = 75A, VGE = 15V, TJ = 25°C V IC = 75A, VGE = 15V, TJ = 150°C IC = 75A, VGE = 15V, TJ V VCE = VGE, IC = 2.1mA mV/°C VCE = VGE, IC = 2.1mA (25°C - 175°C) VCE = 50V, IC = 75A, PW = 60μs S μA VGE = 0V, VCE = 600V VGE = 0V, VCE = 600V, TJ = 175°C V IF = 75A IF = 75A, TJ = 175°C nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. — 150 225 Qg Total Gate Charge (turn-on) Qge Gate-to-Emitter Charge (turn-on) — 40 60 Qgc Gate-to-Collector Charge (turn-on) — 60 90 Eon Turn-On Switching Loss — 2465 3360 Eoff Turn-Off Switching Loss — 2155 3040 Etotal Total Switching Loss — 4620 6400 td(on) Turn-On delay time — 50 70 tr Rise time — 70 90 td(off) Turn-Off delay time — 200 225 tf Fall time — 60 80 Eon Turn-On Switching Loss — 3870 — Eoff Turn-Off Switching Loss — 2815 — Etotal Total Switching Loss — 6685 — td(on) Turn-On delay time — 50 — tr Rise time — 70 — td(off) Turn-Off delay time — 240 — tf Fall time — 70 — Units Conditions IC = 75A nC VGE = 15V VCC = 400V IC = 75A, VCC = 400V, VGE = 15V μJ RG = 10Ω, L = 200μH, TJ = 25°C Energy losses include tail & diode reverse recovery IC = 75A, VCC = 400V, VGE = 15V ns RG = 10Ω, L = 200μH, TJ = 25°C IC = 75A, VCC = 400V, VGE=15V μJ RG=10Ω, L=200μH, TJ = 175°C Energy losses include tail & diode reverse recovery IC = 75A, VCC = 400V, VGE = 15V ns RG = 10Ω, L = 200μH TJ = 175°C VGE = 0V Cies Input Capacitance — 4440 — Coes Output Capacitance — 245 — VCC = 30V Cres Reverse Transfer Capacitance — 130 — f = 1.0Mhz RBSOA Reverse Bias Safe Operating Area FULL SQUARE SCSOA Short Circuit Safe Operating Area 5 pF TJ = 175°C, IC = 300A VCC = 480V, Vp ” 600V Rg = 10Ω, VGE = +20V to 0V — — μs VCC = 400V, Vp ”600V Rg = 10Ω, VGE = +15V to 0V Erec trr Reverse Recovery Energy of the Diode — 470 — μJ TJ = 175°C Diode Reverse Recovery Time — 155 — ns VCC = 400V, IF = 75A Irr Peak Reverse Recovery Current — 27 — A VGE = 15V, Rg = 10Ω, L = 60μH Notes:  VCC = 80% (VCES), VGE = 20V, L = 10μH, RG = 10Ω. ‚ Pulse width limited by max. junction temperature. ƒ Refer to AN-1086 for guidelines for measuring V(BR)CES safely. „ Rθ is measured at TJ of approximately 90°C. 2 www.irf.com IRGP4066DPbF/IRGP4066D-EPbF 140 400 120 300 80 Ptot (W) IC (A) 100 60 200 40 100 20 0 0 25 50 75 100 125 150 175 25 50 75 100 125 150 175 T C (°C) T C (°C) Fig. 1 - Maximum DC Collector Current vs. Case Temperature Fig. 2 - Power Dissipation vs. Case Temperature 1000 1000 100μsec 10μsec 100 100 10 IC (A) IC (A) 1msec DC 10 1 Tc = 25°C Tj = 175°C Single Pulse 0.1 1 1 10 100 1000 10 100 VCE (V) VCE (V) Fig. 3 - Forward SOA TC = 25°C, TJ ≤ 175°C; VGE =15V 300 250 250 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 150 150 100 100 50 50 0 0 0 2 4 6 VCE (V) 8 10 Fig. 5 - Typ. IGBT Output Characteristics TJ = -40°C; tp = ≤60μs www.irf.com VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 200 ICE (A) ICE (A) Fig. 4 - Reverse Bias SOA TJ = 175°C; VGE =20V 300 200 1000 0 2 4 6 8 10 VCE (V) Fig. 6 - Typ. IGBT Output Characteristics TJ = 25°C; tp = ≤60μs 3 IRGP4066DPbF/IRGP4066D-EPbF 300 300 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 250 200 IF (A) ICE (A) 200 250 150 150 100 100 50 50 0 -40°C 25°C 175°C 0 0 2 4 6 8 10 0.0 1.0 2.0 VCE (V) 20 20 18 18 16 16 14 14 ICE = 38A ICE = 75A 10 ICE = 150A 8 12 ICE = 38A ICE = 75A 10 ICE = 150A 8 6 6 4 4 2 2 0 0 5 10 15 20 5 10 VGE (V) 20 Fig. 10 - Typical VCE vs. VGE TJ = 25°C 300 20 IC, Collector-to-Emitter Current (A) 18 16 14 VCE (V) 15 VGE (V) Fig. 9 - Typical VCE vs. VGE TJ = -40°C 12 ICE = 38A ICE = 75A 10 8 ICE = 150A 6 4 2 250 T J = 25°C T J = 175°C 200 150 100 50 0 0 5 10 15 VGE (V) Fig. 11 - Typical VCE vs. VGE TJ = 175°C 4 4.0 Fig. 8 - Typ. Diode Forward Characteristics tp = 80μs VCE (V) VCE (V) Fig. 7 - Typ. IGBT Output Characteristics TJ = 175°C; tp = ≤60μs 12 3.0 VF (V) 20 4 6 8 10 12 14 16 18 VGE, Gate-to-Emitter Voltage (V) Fig. 12 - Typ. Transfer Characteristics VCE = 50V; tp = 60μs www.irf.com IRGP4066DPbF/IRGP4066D-EPbF 12000 1000 10000 Swiching Time (ns) tdOFF Energy (μJ) 8000 EON 6000 4000 EOFF tF 100 tdON tR 2000 0 10 0 25 50 75 100 125 150 0 50 100 150 IC (A) IC (A) Fig. 13 - Typ. Energy Loss vs. IC TJ = 175°C; L = 200μH; VCE = 400V, RG = 10Ω; VGE = 15V 11000 Fig. 14 - Typ. Switching Time vs. IC TJ = 175°C; L = 200μH; VCE = 400V, RG = 10Ω; VGE = 15V 10000 Swiching Time (ns) 9000 Energy (μJ) 1000 7000 EON 5000 EOFF tdOFF tF tR 100 3000 tdON 1000 10 0 25 50 75 100 0 20 60 80 100 120 RG (Ω) Rg (Ω) Fig. 15 - Typ. Energy Loss vs. RG TJ = 175°C; L = 200μH; VCE = 400V, ICE = 75A; VGE = 15V Fig. 16 - Typ. Switching Time vs. RG TJ = 175°C; L = 200μH; VCE = 400V, ICE = 75A; VGE = 15V 35 30 RG = 5.0Ω 30 RG = 10Ω 25 25 IRR (A) IRR (A) 40 RG = 47Ω 20 20 15 RG = 100Ω 10 15 20 40 60 80 100 120 IF (A) Fig. 17 - Typ. Diode IRR vs. IF TJ = 175°C www.irf.com 140 160 0 20 40 60 80 100 RG (Ω) Fig. 18 - Typ. Diode IRR vs. RG TJ = 175°C 5 IRGP4066DPbF/IRGP4066D-EPbF 30 3000 5.0Ω 10Ω 150A 47Ω 2500 IRR (A) QRR (nC) 25 100Ω 20 2000 15 1500 200 300 400 500 600 38A 200 700 75A 300 400 500 600 700 diF /dt (A/μs) diF /dt (A/μs) Fig. 20 - Typ. Diode QRR vs. diF/dt VCC = 400V; VGE = 15V; TJ = 175°C Fig. 19 - Typ. Diode IRR vs. diF/dt VCC = 400V; VGE = 15V; IF = 75A; TJ = 175°C 400 800 20 RG = 10Ω 350 Tsc 15 Time (μs) 250 RG = 47Ω 200 Isc 10 400 5 200 RG = 100Ω 150 100 0 0 10 20 30 40 50 60 70 8 10 12 IF (A) 16 18 Fig. 22 - VGE vs. Short Circuit Time VCC = 400V; TC = 25°C 10000 16 VGE, Gate-to-Emitter Voltage (V) Cies Capacitance (pF) 14 VGE (V) Fig. 21 - Typ. Diode ERR vs. IF TJ = 175°C 1000 Coes 100 Cres 10 VCES = 400V VCES = 300V 14 12 10 8 6 4 2 0 0 100 200 300 400 VCE (V) Fig. 23 - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz 6 Current (A) Energy (μJ) 600 RG = 22Ω 300 500 0 20 40 60 80 100 120 140 160 Q G, Total Gate Charge (nC) Fig. 24 - Typical Gate Charge vs. VGE ICE = 75A; L = 485μH www.irf.com IRGP4066DPbF/IRGP4066D-EPbF Thermal Response ( Z thJC ) 1 D = 0.50 0.1 0.20 0.10 0.05 0.01 0.02 0.01 τJ R1 R1 τJ τ1 R3 R3 R4 R4 τ2 τ1 τ2 τ3 τ3 τ4 τi (sec) Ri (°C/W) τC τ τ4 Ci= τi/Ri Ci i/Ri SINGLE PULSE ( THERMAL RESPONSE ) 0.001 R2 R2 0.00738 0.000009 0.09441 0.000179 0.13424 0.002834 0.09294 0.0182 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) Thermal Response ( Z thJC ) 10 1 D = 0.50 0.20 0.10 0.05 0.1 τJ 0.02 0.01 0.01 R1 R1 τJ τ1 R2 R2 R3 R3 τ2 τ1 τ2 τ3 τ3 1E-005 τ4 τ4 τi (sec) 0.02738 0.000053 0.34077 0.000485 0.41380 0.005203 0.22819 0.034407 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 Ri (°C/W) τC τ Ci= τi/Ri Ci i/Ri 0.001 R4 R4 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) www.irf.com 7 IRGP4066DPbF/IRGP4066D-EPbF L L DUT 0 VCC 80 V + - 1K DUT VCC Rg Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit diode clamp / DUT L 4X DC -5V VCC DUT / DRIVER DUT VCC Rg SCSOA Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit C force R= VCC ICM 100K D1 DUT Rg 22K C sense VCC G force DUT 0.0075μF E sense E force Fig.C.T.5 - Resistive Load Circuit 8 Fig.C.T.6 - BVCES Filter Circuit www.irf.com IRGP4066DPbF/IRGP4066D-EPbF 600 600 120 120 tf tr 100 500 400 80 400 300 60 300 60 200 40 200 40 VCE (V) ICE (A) VCE (V) 90% ICE 5% V CE 100 100 20 100 TEST CURRENT 90% ICE 80 10% ICE 5% V CE ICE (A) 500 20 5% ICE 0 0 0 Eoff Loss -100 -20 -0.2 0.0 0.2 0.4 -20 7.6 0.6 7.8 time(µs) Fig. WF2 - Typ. Turn-on Loss Waveform @ TJ = 175°C using Fig. CT.4 90 QRR 70 60 50 600 600 VCE 500 400 Vce (V) V F (V) 700 t RR 30 20 10 0 Peak IRR -30 400 300 300 ICE 200 200 100 100 0 -40 -50 -0.20 -0.10 0.00 0.10 0.20 0.30 0.40 time (µS) Fig. WF3 - Typ. Diode Recovery Waveform @ TJ = 175°C using Fig. CT.4 www.irf.com 700 500 40 -10 -20 8.2 time (µs) Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 175°C using Fig. CT.4 80 8.0 ICE (A) -100 -0.4 0 Eon Loss 0 -100 -100 -3 0 3 6 9 12 Time (uS) Fig. WF4 - Typ. S.C. Waveform @ TJ = 25°C using Fig. CT.3 9 IRGP4066DPbF/IRGP4066D-EPbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information (;$03/( 7+,6,6$1,5)3( :,7+$66(0%/