IRGP4078DPbF
IRGP4078D-EP
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE
FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS
Features
• Low VCE (ON) Trench IGBT Technology
• Low Switching Losses
• Maximum Junction temperature 175°C
• 5 µs short circuit SOA
• Square RBSOA
• 100% of the parts tested for ILM
• Positive VCE (ON) Temperature co-efficient
• Ultra-low VF Hyperfast Diode
• Tight parameter distribution
Package Type
IRGP4078DPbF
IRGP4078D-EPbF
TO-247AC
TO-247AD
TJ(MAX) = 175°C
www.irf.com © 2014 International Rectifier
VCE(ON) typ. = 1.9V
E
n-channel
C
C
G
C
E
GC
IRGP4078DPbF
TO-247AC
G
Gate
Tube
Tube
25
25
E
IRGP4078D-EP
TO-247AD
C
Collector
Standard Pack
Form
Quantity
E
Emitter
Orderable Part Number
IRGP4078DPbF
IRGP4078D-EPbF
Parameter
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C Continuous Collector Current
IC @ TC = 100°C Continuous Collector Current
ICM
Pulse Collector Current, VGE = 15V
ILM
Clamped Inductive Load Current, VGE = 20V
IF @ TC = 25°C Diode Continuous Forward Current
IF @ TC = 100°C Diode Continuous Forward Current
IFSM @ TC = 25°C Diode Non Repetitive Peak Surge Current @ TJ = 25°C
IFRM @Tc = 100°C Diode Repetitive Peak Forward Current at tp=10µs
VGE
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
PD @ TC = 25°C Maximum Power Dissipation
PD @ TC = 100°C Maximum Power Dissipation
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
1
VCES = 600V
G
Absolute Maximum Ratings
Mounting Torque, 6-32 or M3 Screw
IC = 50A, TC =100°C
Benefits
• Device optimized for induction heating and soft switching
applications
• High Efficiency due to Low VCE(ON), Low Switching Losses
and Ultra-low VF
• Rugged transient Performance for increased reliability
• Excellent Current sharing in parallel operation
• Low EMI
Base part number
C
Max.
600
74
50
150
200
44
25
120
79
±20
±30
278
139
-55 to +175
Units
V
A
V
W
°C
300
(0.063 in.(1.6mm) from case)
10 lbf·in (1.1 N·m)
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IRGP4078DPbF/EP
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
Parameter
(IGBT) Thermal Resistance Junction-to-Case-(each IGBT)
(Diode) Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Collector-to-Emitter Breakdown Voltage
600
—
V(BR)CES
—
0.45
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage
VCE(on)
Collector-to-Emitter Saturation Voltage
—
1.9
—
2.5
—
2.6
VGE(th)
Gate Threshold Voltage
4.0
—
gfe
Forward Transconductance
—
26
ICES
Collector-to-Emitter Leakage Current
—
1.0
—
600
VFM
Diode Forward Voltage Drop
—
1.17
—
1.06
IGES
Gate-to-Emitter Leakage Current
—
—
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Qg
Total Gate Charge (turn-on)
—
61
Gate-to-Emitter Charge (turn-on)
—
20
Qge
Qgc
Gate-to-Collector Charge (turn-on)
—
22
Eoff
Turn-Off Switching Loss
—
1.1
Min.
–––
–––
–––
–––
Max.
—
—
2.2
—
—
6.5
—
80
—
1.30
—
±100
Turn-Off delay time
Fall time
Turn-Off Switching Loss
—
—
—
116
33
1.5
—
—
—
td(off)
tf
Cies
Coes
Cres
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
—
—
113
54
2105
131
59
—
—
—
—
—
RBSOA
Reverse Bias Safe Operating Area
SCSOA
Short Circuit Safe Operating Area
ns
mJ
ns
pF
FULL SQUARE
5
—
—
Max.
0.54
2.55
–––
40
Units
°C/W
Units
Conditions
V
VGE = 0V, IC = 100µA
V/°C VGE = 0V, IC = 1mA (25°C-175°C)
V
IC = 50A, VGE = 15V, TJ = 25°C
IC = 50A, VGE = 15V, TJ = 150°C
IC = 50A, VGE = 15V, TJ = 175°C
V
VCE = VGE, IC = 1.0mA
S
VCE = 50V, IC = 50A, PW = 20µs
µA
VGE = 0V, VCE = 600V
VGE = 0V, VCE = 600V, TJ = 175°C
V
IF = 25A
IF = 25A, TJ = 175°C
nA VGE = ±20V
Max. Units
92
nC
30
33
1.4
mJ
td(off)
tf
Eoff
Typ.
–––
–––
0.24
–––
µs
Conditions
IC = 50A
VGE = 15V
VCC = 300V
IC = 50A, VCC = 400V, VGE = 15V
RG = 10, L = 210µH, TJ = 25°C
Energy losses include tail & diode
reverse recovery
IC = 50A, VCC = 400V, VGE=15V
RG = 10, L = 210µH, TJ = 175°C
Energy losses include tail & diode
reverse recovery
VGE = 0V
VCC = 30V
f = 1.0Mhz
TJ = 175°C, IC = 200A
VCC = 480V, Vp ≤ 600V
Rg = 10, VGE = +20V to 0V
VCC = 400V, Vp ≤ 600V
Rg = 10, VGE = +15V to 0V
Notes:
VCC = 80% (VCES), VGE = 20V, L = 23µH, RG = 10.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
fsw = 20KHz, refer to figure 19.
R is measured at TJ of approximately 90°C.
Sinusoidal half wave, t = 10ms.
2
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IRGP4078DPbF/EP
300
80
250
60
Ptot (W)
IC (A)
200
40
150
100
20
50
0
0
25
50
75
100
125
150
25
175
50
75
100
125
150
175
TC (°C)
TC (°C)
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
Fig. 2 - Power Dissipation vs.
Case Temperature
1000
200
V GE = 18V
V GE = 15V
V GE = 12V
150
V GE = 10V
IC (A)
ICE (A)
100
V GE = 8.0V
100
10
50
1
0
10
100
1000
0
6
8
10
V CE (V)
Fig. 3 - Reverse Bias SOA
TJ = 150°C; VGE = 20V
Fig. 4 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 20µs
200
V GE = 18V
V GE = 18V
V GE = 15V
V GE = 15V
150
V GE = 12V
150
V GE = 12V
V GE = 10V
V GE = 10V
V GE = 8.0V
ICE (A)
ICE (A)
4
V CE (V)
200
100
V GE = 8.0V
100
50
50
0
0
0
2
4
6
8
10
V CE (V)
Fig. 5 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 20µs
3
2
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0
2
4
6
8
10
V CE (V)
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 175°C; tp = 20µs
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IRGP4078DPbF/EP
12
1000
10
8
IF (A)
V CE (V)
100
10
ICE = 25A
ICE = 50A
6
ICE = 100A
4
-40°C
25°C
175°C
2
0
1
0.0
1.0
2.0
5
3.0
10
VF (V)
12
12
10
10
V CE (V)
V CE (V)
ICE = 25A
ICE = 50A
8
ICE = 25A
ICE = 50A
6
ICE = 100A
ICE = 100A
6
4
4
2
2
0
0
5
10
15
20
5
10
V GE (V)
15
20
V GE (V)
Fig. 10 - Typical VCE vs. VGE
TJ = 175°C
Fig. 9 - Typical VCE vs. VGE
TJ = 25°C
5000
350
300
4000
250
EOFF
TJ = 25°C
Energy (µJ)
ICE (A)
20
Fig. 8 - Typical VCE vs. VGE
TJ = -40°C
Fig. 7 - Typ. Diode Forward Voltage Drop
Characteristics
8
15
V GE (V)
200
150
100
TJ = 175°C
3000
2000
1000
50
0
0
4
6
8
10
12
14
16
18
20
V GE (V)
Fig. 11 - Typ. Transfer Characteristics
VCE = 50V; tp = 20µs
4
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10
20
30
40
50
60
70
80
90 100
IC (A)
Fig. 12 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 210mH; VCE = 400V, RG = 10; VGE = 15V
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IRGP4078DPbF/EP
5000
1000
EOFF
tdOFF
Energy (µJ)
Swiching Time (ns)
4000
100
tF
3000
2000
1000
10
0
20
40
60
80
0
100
20
40
60
80
100
IC (A)
Rg ()
Fig. 13 - Typ. Switching Time vs. IC
TJ = 175°C; L = 210mH; VCE = 400V, RG = 10; VGE = 15V
Fig. 14 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 210mH; VCE = 400V, ICE = 50A; VGE = 15V
1000
350
20
Tsc
Time (µs)
100
tF
10
0
20
40
60
80
16
280
12
210
8
140
4
70
100
8
10
12
RG ( )
16
18
Fig. 16 - VGE vs. Short Circuit
VCC = 400V; TC = 25°C
16
V GE, Gate-to-Emitter Voltage (V)
10000
Cies
Capacitance (pF)
14
VGE (V)
Fig. 15 - Typ. Switching Time vs. RG
TJ = 175°C; L = 210mH; VCE = 400V, ICE = 50A; VGE = 15V
1000
100
Coes
Cres
14
V CES = 400V
12
V CES = 300V
10
8
6
4
2
0
10
0
5
Isc
Current (A)
Swiching Time (ns)
tdOFF
100
200
300
400
500
0
10
20
30
40
50
60
70
V CE (V)
Q G, Total Gate Charge (nC)
Fig. 17 - Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
Fig. 18 - Typical Gate Charge vs. VGE
ICE = 50A
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IRGP4078DPbF/EP
D= 0.1
120
Repetitive Peak Current (A)
V GE(th), Gate Threshold Voltage (Normalized)
140
100
D= 0.2
80
60
Square Pulse,
f = 20KHz
D = t/T
40
D= 0.5
20
t
T = 50us
0
25
50
75
100
125
150
6.0
IC = 1.0mA
5.0
4.0
3.0
2.0
25
175
50
75
100
125
150
175
TJ , Temperature (°C)
Case Temperature (°C)
Fig. 20 - Typical Gate Threshold Voltage
(Normalized) vs. Junction Temperature
Fig. 19 - Maximum Diode Repetitive Forward
Peak Current vs. Case Temperature
1
Thermal Response ( Z thJC )
D = 0.50
0.20
0.1
0.10
0.05
J
R1
R1
J
1
0.02
0.01
0.01
R2
R2
R3
R3
R4
R4
C
2
1
3
2
4
3
4
Ci= iRi
Ci= iRi
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
C
1E-005
Ri (°C/W)
i (sec)
0.011823
0.000009
0.150739
0.000142
0.223153
0.002294
0.153695
0.014121
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 21. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
Thermal Response ( Z thJC )
10
1
D = 0.50
0.20
0.10
0.1
0.05
J
0.02
0.01
R1
R1
J
1
R2
R2
R3
R3
R4
R4
C
2
1
2
3
4
3
Ci= iRi
Ci= iRi
0.01
0.001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
4
C
Ri (°C/W)
i (sec)
0.073136
0.000027
0.471726
0.000218
1.318881
0.002656
0.686257
0.026124
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 22. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
6
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IRGP4078DPbF/EP
L
L
80 V +
VCC
DUT
0
-
1K
DUT
VCC
Rg
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
4X
DC
VCC
DUT
Fig.C.T.4 - Switching Loss Circuit
Fig.C.T.3 - S.C. SOA Circuit
C force
100K
D1
22K
C sense
G force
DUT
0.0075µF
E sense
E force
Fig.C.T.5 - BVCES Filter Circuit
7
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IRGP4078DPbF/EP
60
500
500
tf
500
VCE
50
400
40
30
200
20
5% VCE
100
Eoff Loss
-0.5
2
-10
4.5
7
time(µs)
Fig. WF1 - Typ. Turn-off Loss Waveform
@ TJ = 175°C using Fig. CT.4
8
300
300
200
200
ICE
100
10
0
-3
400
100
10% ICE
0
-100
Vce (V)
300
ICE (A)
VCE (V)
90% ICE
400
Ice (A)
600
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0
0
-100
-100
-5
0
5
10
time (µs)
Fig. WF2 - Typ. S.C. Waveform @ TJ = 25°C
using Fig. CT.3
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IRGP4078DPbF/EP
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
Notes: This part marking information applies to devices produced after 02/26/2001
EXAMPLE: THIS IS AN IRFPE30
WITH ASSEMBLY
LOT CODE 5657
ASSEMBLED ON WW 35, 2001
IN THE ASSEMBLY LINE "H"
Note: "P" in assembly line position
indicates "Lead-Free"
INTERNATIONAL
RECTIFIER
LOGO
PART NUMBER
IRFPE30
56
135H
57
ASSEMBLY
LOT CODE
DATE CODE
YEAR 1 = 2001
WEEK 35
LINE H
TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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IRGP4078DPbF/EP
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
TO-247AD Part Marking Information
E X A M P L E : T H IS IS A N IR G P 3 0 B 1 2 0 K D - E
W IT H A S S E M B L Y
LO T C O D E 5657
ASSEM BLED O N W W 35, 2000
IN T H E A S S E M B L Y L IN E "H "
N o te : "P " in a s s e m b ly lin e p o s itio n
in d ic a te s "L e a d - F re e "
PART N U M BER
IN T E R N A T IO N A L
R E C T IF IE R
LO G O
56
035H
57
ASSEM B LY
LO T C O D E
D A TE C O D E
YE A R 0 = 2 0 0 0
W EEK 35
L IN E H
TO-247AD package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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IRGP4078DPbF/EP
Qualification Information†
Industrial†
Qualification Level
TO-247AC
Moisture Sensitivity Level
(per JEDEC JESD47F) ††
N/A
TO-247AD
N/A
Yes
RoHS Compliant
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
††
Applicable version of JEDEC standard at the time of product release.
Revision History
Comment
Date
7/17/2014
Corrected from “INOMINAL = 50A” to “IC= 50A, TC = 100C” on page1
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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