IRGP4266DPbF
IRGP4266D-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
VCES = 650V
C
IC = 90A, TC =100°C
tSC 5.5µs, TJ(max) = 175°C
G
VCE(ON) typ. = 1.7V @ IC = 75A
G
E
E
G
G
Gate
C
Collector
Features
C
E
IRGP4266D-EPbF
TO-247AD
IRGP4266DPbF
TO-247AC
n-channel
Applications
Industrial Motor Drive
UPS
Solar Inverters
Welding
C
E
Emitter
Benefits
Low VCE(ON) and Switching Losses
5.5µs Short Circuit SOA
Square RBSOA
Maximum Junction Temperature 175°C
Positive VCE (ON) Temperature Co-efficient
Base part number
Package Type
IRGP4266DPbF
IRGP4266D-EPbF
TO-247AC
TO-247AD
High Efficiency in a Wide Range of Applications
Rugged Transient Performance
Increased Reliability
Excellent Current Sharing in Parallel Operation
Standard Pack
Form
Quantity
Tube
25
Tube
25
Orderable Part Number
IRGP4266DPbF
IRGP4266D-EPbF
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, VGE=20V
Clamped Inductive Load Current, VGE=20V
Diode Continuous Forward Current
Diode Continuous Forward Current
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Max.
Units
650
140
90
300
300
68
42
±20
455
230
-40 to +175
V
A
V
W
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
C
Thermal Resistance
RJC (IGBT)
RJC (Diode)
RCS
RJA
1
Parameter
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
40
Max.
0.33
1.1
–––
–––
Units
°C/W
2017-12-18
IRGP4266DPbF/IRGP4266D-EPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
V(BR)CES/TJ
Parameter
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Min.
650
—
Typ.
—
0.65
—
1.7
—
2.2
Gate Threshold Voltage
5.5
—
VGE(th)
Threshold Voltage Temperature Coeff.
—
-20
VGE(th)/TJ
gfe
Forward Transconductance
—
47
—
1.0
ICES
Collector-to-Emitter Leakage Current
—
1.0
—
—
IGES
Gate-to-Emitter Leakage Current
—
2.1
Diode Forward Voltage Drop
VF
—
1.7
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Max.
—
—
Units
Conditions
V
VGE = 0V, IC = 100µA
V/°C VGE = 0V, IC = 5.0mA (25°C-175°C)
2.1
V
IC = 75A, VGE = 15V, TJ = 25°C
—
IC = 75A, VGE = 15V, TJ = 175°C
7.7
V
VCE = VGE, IC = 2.1mA
—
mV/°C VCE = VGE, IC = 2.1mA (25°C-150°C)
—
S
VCE = 50V, IC = 75A, PW = 20µs
35
µA VGE = 0V, VCE = 650V
mA VGE = 0V, VCE = 650V, TJ = 175°C
—
±100
nA VGE = ±20V
2.7
V
IF = 75A
—
IF = 75A, TJ = 175°C
VCE(on)
Collector-to-Emitter Saturation Voltage
Qg
Qge
Qgc
Eon
Eoff
Etotal
td(on)
tr
td(off)
tf
Eon
Parameter
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Eoff
Etotal
td(on)
tr
td(off)
tf
Cies
Coes
Cres
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RBSOA
Reverse Bias Safe Operating Area
SCSOA
Short Circuit Safe Operating Area
5.5
—
—
µs
Erec
trr
Irr
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
—
—
—
770
170
27
—
—
—
µJ
ns
A
Min.
—
—
—
—
—
—
—
—
—
—
—
Typ.
140
50
60
2.5
2.2
4.7
50
70
200
60
3.9
—
—
—
—
—
—
—
—
—
2.8
6.7
50
70
240
70
4430
310
130
Max Units
Conditions
210
IC = 75A
nC VGE = 15V
80
VCC = 400V
90
3.4
3.0
mJ IC = 75A, VCC = 400V, VGE=15V
6.4
RG = 10, L = 200µH, TJ = 25°C
70
Energy losses include tail & diode
90
ns reverse recovery
225
80
—
—
—
—
—
—
—
—
—
—
mJ
ns
pF
FULL SQUARE
IC = 75A, VCC = 400V, VGE=15V
RG = 10, L = 200µH, TJ = 175°C
Energy losses include tail & diode
reverse recovery
VGE = 0V
VCC = 30V
f = 1.0MHz
TJ = 175°C, IC = 225A
VCC = 480V, Vp ≤ 650V
Rg = 50, VGE = +20V to 0V
TJ = 150°C,VCC = 400V, Vp ≤ 650V
Rg = 50, VGE = +15V to 0V
TJ = 175°C
VCC = 400V, IF = 75A
VGE = 15V, Rg = 10
Notes:
VCC = 80% (VCES), VGE = 20V.
R is measured at TJ of approximately 90°C.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Maximum limits are based on statistical sample size characterization.
Pulse width limited by max. junction temperature.
Values influenced by parasitic L and C in measurement.
2
2017-12-18
IRGP4266DPbF/IRGP4266D-EPbF
140
For both:
Duty cycle : 50%
Tj = 175°C
Tcase = 100°C
Gate drive as specified
Power Dissipation = 208.3W
Load Current ( A )
120
100
Square Wave:
80
VCC
60
I
40
Diode as specified
20
0.1
1
10
100
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
500
160
140
400
120
Ptot (W)
IC (A)
100
80
60
40
300
200
100
20
0
0
25
50
75
100
125
150
25
175
50
75
100
125
150
175
TC (°C)
TC (°C)
Fig. 3 - Power Dissipation vs.
Case Temperature
Fig. 2 - Maximum DC Collector Current vs.
Case Temperature
1000
1000
100
10
100
IC (A)
IC (A)
10µsec
100µsec
10
1msec
1
DC
Tc = 25°C
Tj = 175°C
Single Pulse
1
0.1
1
10
100
1000
VCE (V)
Fig. 4 - Forward SOA
TC = 25°C; TJ ≤ 175°C; VGE = 15V
3
10000
10
100
1000
VCE (V)
Fig. 5 - Reverse Bias SOA
TJ = 175°C; VGE = 20V
2017-12-18
IRGP4266DPbF/IRGP4266D-EPbF
300
300
VGE = 18V
VGE = 18V
VGE = 15V
250
VGE = 15V
250
VGE = 12V
200
VGE = 10V
200
VGE = 8.0V
ICE (A)
ICE (A)
VGE = 12V
VGE = 10V
150
VGE = 8.0V
150
100
100
50
50
0
0
0
2
4
6
8
0
10
2
4
6
8
10
V CE (V)
V CE (V)
Fig. 6 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 20µs
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 20µs
300
300
VGE = 18V
VGE = 15V
250
250
VGE = 12V
VGE = 10V
200
VGE = 8.0V
IF (A)
ICE (A)
200
150
150
100
100
50
50
-40°C
25°C
175°C
0
0
0
2
4
6
8
0.0
10
1.0
2.0
12
12
10
10
ICE = 38A
ICE = 75A
8
ICE = 38A
ICE = 75A
8
ICE = 150A
V CE (V)
V CE (V)
4.0
Fig. 9 - Typ. Diode Forward Voltage Drop
Characteristics
Fig. 8 - Typ. IGBT Output Characteristics
TJ = 175°C; tp = 20µs
6
ICE = 150A
6
4
4
2
2
0
0
5
10
15
V GE (V)
Fig. 10 - Typical VCE vs. VGE
TJ = -40°C
4
3.0
V F (V)
V CE (V)
20
5
10
15
20
V GE (V)
Fig. 11 - Typical VCE vs. VGE
TJ = 25°C
2017-12-18
IRGP4266DPbF/IRGP4266D-EPbF
225
12
10
8
135
ICE = 150A
ICE (A)
V CE (V)
180
ICE = 38A
ICE = 75A
6
90
TJ = 25°C
TJ = 175°C
4
45
2
0
0
5
10
15
2
20
4
8
10
12
14
16
V GE (V)
Fig. 12 - Typical VCE vs. VGE
TJ = 175°C
Fig. 13 - Typ. Transfer Characteristics
VCE = 50V; tp = 20µs
12
1000
10
tdOFF
Swiching Time (ns)
8
Energy (mJ)
6
V GE (V)
EON
6
4
EOFF
tF
100
tdON
2
tR
0
0
25
50
75
100
125
10
150
0
IC (A)
Fig. 14 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 200µH; VCE = 400V, RG = 10; VGE = 15V
50
100
150
IC (A)
Fig. 15 - Typ. Switching Time vs. IC
TJ = 175°C; L = 200µH; VCE = 400V, RG = 10; VGE = 15V
10000
11
10
Swiching Time (ns)
9
Energy (mJ)
8
1000
7
6
EON
5
4
tF
tR
100
EOFF
3
tdON
2
0
25
50
75
100
Rg ()
Fig. 16 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 200µH; VCE = 400V, ICE = 75A; VGE = 15V
5
tdOFF
10
0
20
40
60
80
100
120
R G ()
Fig. 17 - Typ. Switching Time vs. RG
TJ = 175°C; L = 200µH; VCE = 400V, ICE = 75A; VGE = 15V
2017-12-18
IRGP4266DPbF/IRGP4266D-EPbF
30
30
RG = 10
25
25
20
IRR (A)
IRR (A)
RG = 22
RG = 47
15
20
15
10
RG = 100
10
5
20
40
60
80
100
120
140
160
0
20
40
60
80
IF (A)
RG (
Fig. 18 - Typ. Diode IRR vs. IF
TJ = 175°C
Fig. 19 - Typ. Diode IRR vs. RG
TJ = 175°C
100
4.4
30
150A
4.0
75A
QRR (µC)
IRR (A)
25
20
3.6
10
22
47
3.2
100
38A
15
2.8
2.4
10
200
200 250 300 350 400 450 500 550 600
300
400
500
600
700
800
diF /dt (A/µs)
diF /dt (A/µs)
Fig. 20 - Typ. Diode IRR vs. diF/dt
VCC = 400V; VGE = 15V; IF = 75A; TJ = 175°C
Fig. 21 - Typ. Diode QRR vs. diF/dt
VCC = 400V; VGE = 15V; TJ = 175°C
700
24
650
400
Tsc
20
RG = 10
330
Isc
Time (µs)
RG = 22
550
RG = 47
500
450
16
260
12
190
8
120
Current (A)
Energy (µJ)
600
RG = 100
400
4
20
40
60
80
100
120
140
IF (A)
Fig. 22 - Typ. Diode ERR vs. IF
TJ = 175°C
6
160
50
8
10
12
14
16
18
VGE (V)
Fig. 23 - VGE vs. Short Circuit Time
VCC = 400V; TC = 150°C
2017-12-18
IRGP4266DPbF/IRGP4266D-EPbF
10000
16
VGE, Gate-to-Emitter Voltage (V)
Capacitance (pF)
Cies
1000
Coes
100
Cres
VCES = 400V
VCES = 300V
14
12
10
10
8
6
4
2
0
0
100
200
300
400
500
600
0
20
V CE (V)
40
60
80
100 120 140 160
Q G, Total Gate Charge (nC)
Fig. 25 - Typical Gate Charge vs. VGE
ICE = 75A
Fig. 24 - Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
1
Thermal Response ( Z thJC )
D = 0.50
0.1
0.20
0.10
0.05
0.01
J
0.02
0.01
R1
R1
J
1
R2
R2
R3
R3
R4
R4
C
2
1
2
3
4
3
C
4
Ci= iRi
Ci= iRi
0.001
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
1E-006
1E-005
Ri (°C/W)
i (sec)
0.0125052
0.000036
0.0722526
0.000151
0.1389474
0.005683
0.1056000
0.029339
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 26 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
Thermal Response ( Z thJC )
10
1
D = 0.50
0.20
0.10
0.05
0.02
0.1
J
0.01
0.01
R1
R1
J
1
R2
R2
R3
R3
R4
R4
C
2
1
2
3
4
3
Ci= iRi
Ci= iRi
0.001
1E-005
0.0001
0.001
i (sec)
0.0131492
0.000022
0.3667154
0.000779
0.3959357
0.009640
0.3228848
0.079874
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
1E-006
4
C
Ri (°C/W)
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 27 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
7
2017-12-18
IRGP4266DPbF/IRGP4266D-EPbF
L
L
VCC
DUT
0
80 V +
-
DUT
1K
VCC
Rg
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
diode clamp /
DUT
L
4X
DC
VCC
-5V
DUT /
DRIVER
DUT
VCC
Rg
RSH
Fig.C.T.3 - S.C. SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
C force
R=
VCC
ICM
100K
D1
22K
C sense
DUT
VCC
G force
DUT
0.0075µF
Rg
E sense
E force
Fig.C.T.5 - Resistive Load Circuit
8
Fig.C.T.6 - BVCES Filter Circuit
2017-12-18
IRGP4266DPbF/IRGP4266D-EPbF
600
120
tf
120
600
tr
500
100
500
400
80
400
60
300
TEST
CURRENT
100
80
40
60
90% ICE
40
200
ICE (A)
200
VCE (V)
300
ICE (A)
VCE (V)
90% ICE
10% VCE
100
20
10% ICE
0
100
0
-0.5
0
0.5
0
0
1
-0.5
0
0.5
time (µs)
Fig. WF1 - Typ. Turn-off Loss Waveform
@ TJ = 175°C using Fig. CT.4
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4
600
600
100
QRR
500
tRR
500
VCE
400
400
40
300
300
Vce (V)
60
20
0
-20
Peak
IRR
200
100
100
0
0
-40
-0.5
ICE
200
0.0
0.5
1.0
time (µs)
Fig. WF3 - Typ. Diode Recovery Waveform
@ TJ = 175°C using Fig. CT.4
Ice (A)
80
IF (A)
-20
-100
-20
time(µs)
9
20
10% VCE
Eon Loss
Eoff Loss
-100
10% ICE
-100
-100
-5
0
5
10
time (µs)
Fig. WF4 - Typ. S.C. Waveform
@ TJ = 150°C using Fig. CT.3
2017-12-18
IRGP4266DPbF/IRGP4266D-EPbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
Notes: This part marking information applies to devices produced after 02/26/2001
EXAMPLE: THIS IS AN IRFPE30
WITH ASSEMBLY
LOT CODE 5657
ASSEMBLED ON WW 35, 2001
IN THE ASSEMBLY LINE "H"
Note: "P" in assembly line position
indicates "Lead-Free"
INTERNATIONAL
RECTIFIER
LOGO
PART NUMBER
IRFPE30
56
ASSEMBLY
LOT CODE
135H
57
DATE CODE
YEAR 1 = 2001
WEEK 35
LINE H
TO-247AC package is not recommended for Surface Mount Application.
10
2017-12-18
IRGP4266DPbF/IRGP4266D-EPbF
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
TO-247AD Part Marking Information
E X A M P L E : T H IS IS A N IR G P 3 0 B 1 2 0 K D - E
W IT H A S S E M B L Y
LO T C O D E 5657
ASSEM BLED O N W W 35, 2000
IN T H E A S S E M B L Y L IN E "H "
N o te : "P " in a s s e m b ly lin e p o s itio n
in d ic a te s "L e a d - F r e e "
PART NUM BER
IN T E R N A T IO N A L
R E C T IF IE R
LO G O
56
ASSEM BLY
LO T CO DE
035H
57
DATE CO D E
YEAR 0 = 2000
W EEK 35
L IN E H
TO-247AD package is not recommended for Surface Mount Application.
11
2017-12-18
IRGP4266DPbF/IRGP4266D-EPbF
Qualification Information†
Industrial
Qualification Level
Moisture Sensitivity Level
TO-247AC
(per JEDEC JESD47F)†
N/A
TO-247AD
Yes
RoHS Compliant
†
N/A
Applicable version of JEDEC standard at the time of product release.
Revision History
Date
Comments
8/21/2014
Updated Temperature Coeff. of Breakdown Voltage from “0.11V/C” to “0.65 V/C” on page 2 .
Updated IC vs. TC graph Fig.2 to match page1 spec data on page 3.
Updated package outline on page11.
12/18/2017
Updated datasheet with corporate template
Added RG = 50Ohm to SCSOA & RBSOA test condition on page 2.
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
12
2017-12-18
