IRGP4650D-EPBF

IRGP4650DPbF IRGP4650D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C IC = 50A, TC = 100°C tSC ≥ 5μs, TJ(max) = 175°C G VCE(on) typ. = 1.60V @ IC = 35A E n-channel Applications • Industrial Motor Drive • Inverters • UPS • Welding G Gate C C E GC TO-247AC IRGP4650DPbF C Collector Features Benefits Square RBSOA and Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient 5μs short circuit SOA Lead-Free, RoHS compliant Package Type IRGP4650DPbF IRGP4650D-EPbF TO-247AC TO-247AD E Emitter High efficiency in a wide range of applications and switching frequencies Improved reliability due to rugged hard switching performance and higher power capability Excellent current sharing in parallel operation Enables short circuit protection scheme Environmentally friendly Low VCE(ON) and Switching Losses Base part number E GC TO-247AD IRGP4650D-EP Standard Pack Form Quantity Tube 25 Tube 25 Orderable part number IRGP4650DPbF IRGP4650D-EPbF Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE = 15V Clamped Inductive Load Current, VGE = 20V Diode Continous Forward Current Diode Continous Forward Current Diode Maximum Forward Current c f Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Max. Units 600 76 50 105 140 76 50 140 ±20 V A V ±30 268 134 -55 to +175 W °C Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw 300 (0.063 in. (1.6mm) from case) 10 lbf·in (1.1 N·m) Thermal Resistance Parameter RθJC (IGBT) RθJC (Diode) RθCS RθJA 1 Junction-to-Case (IGBT) Junction-to-Case (Diode) d d Case-to-Sink (flat, greased surface) Junction-to-Ambient (typical socket mount) www.irf.com © 2014 International Rectifier Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– 0.24 ––– 0.56 1.0 ––– 40 °C/W Submit Datasheet Feedback November 17, 2014 IRGP4650DPbF/IRGP4650D-EPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)CES Collector-to-Emitter Breakdown Voltage ΔV(BR)CES/ΔTJ Temperature Coeff. of Breakdown Voltage VCE(on) Collector-to-Emitter Saturation Voltage VGE(th) ΔVGE(th)/ΔTJ gfe ICES Gate Threshold Voltage Threshold Voltage temp. coefficient Forward Transconductance Collector-to-Emitter Leakage Current VFM Diode Forward Voltage Drop IGES Gate-to-Emitter Leakage Current Min. Typ. Max. 600 — — — — 4.0 — — — — — — — — 1.3 1.60 1.90 2.00 — -18 25 1.0 770 2.0 1.4 — — — 1.90 — — 6.5 — — 70 — 3.0 — ±100 Units Conditions e V VGE = 0V, IC = 100μA mV/°C VGE = 0V, IC = 1mA (25°C-175°C) IC = 35A, VGE = 15V, TJ = 25°C V IC = 35A, VGE = 15V, TJ = 150°C IC = 35A, VGE = 15V, TJ = 175°C V VCE = VGE, IC = 1.0mA mV/°C VCE = VGE, IC = 1.0mA (25°C - 175°C) S VCE = 50V, IC = 35A, PW = 60μs μA VGE = 0V, VCE = 600V VGE = 0V, VCE = 600V, TJ = 175°C V IF = 35A IF = 35A, TJ = 175°C nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Min. Typ. Max. Qg Qge Qgc Eon Eoff Etotal td(on) tr td(off) tf Eon Eoff Etotal td(on) tr td(off) tf Cies Coes Cres Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Parameter — — — — — — — — — — — — — — — — — — — — 69 18 29 390 632 1022 46 33 105 44 1013 929 1942 43 35 127 61 2113 197 65 104 27 44 508 753 1261 56 42 117 54 — — — — — — — — — — RBSOA Reverse Bias Safe Operating Area FULL SQUARE SCSOA Short Circuit Safe Operating Area Erec trr Irr Reverse Recovery Energy of the Diode Diode Reverse Recovery Time Peak Reverse Recovery Current Units nC μJ ns Conditions IC = 35A VGE = 15V VCC = 400V IC = 35A, VCC = 400V, VGE = 15V RG = 10Ω, L = 200μH, LS = 150nH, TJ = 25°C Energy losses include tail & diode reverse recovery μJ IC = 35A, VCC = 400V, VGE=15V RG =10Ω, L=200μH, LS=150nH, TJ = 175°C Energy losses include tail & diode reverse recovery ns IC = 35A, VCC = 400V, VGE = 15V RG = 10Ω, L = 200μH, LS = 150nH TJ = 175°C pF 5 — — μs — — — 304 120 25 — — — μJ ns A g IC = 35A, VCC = 400V, VGE = 15V RG = 10Ω, L = 200μH, LS = 150nH, TJ = 25°C g VGE = 0V VCC = 30V f = 1.0Mhz TJ = 175°C, IC = 140A VCC = 480V, Vp ”600V Rg = 10Ω, VGE = +20V to 0V VCC = 400V, Vp ”600V Rg = 10Ω, VGE = +15V to 0V TJ = 175°C VCC = 400V, IF = 35A VGE = 15V, Rg = 10Ω, L =210μH, Ls = 150nH Notes:  ‚ ƒ „ … VCC = 80% (V CES), VGE = 20V, L = 19μH, RG = 10Ω. Rθ is measured at TJ of approximately 90°C. Refer to AN-1086 for guidelines for measuring V(BR)CES safely. Pulse width limited by max. junction temperature. Values influenced by parasitic L and C in measurement. 2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 17, 2014 IRGP4650DPbF/IRGP4650D-EPbF 80 300 70 250 60 200 Ptot (W) IC (A) 50 40 30 150 100 20 50 10 0 0 25 50 75 100 125 150 175 25 50 75 100 125 150 175 T C (°C) T C (°C) Fig. 1 - Maximum DC Collector Current vs. Case Temperature Fig. 2 - Power Dissipation vs. Case Temperature 1000 1000 100 10 100 10μsec IC (A) IC (A) 100μsec 1msec DC 10 1 Tc = 25°C Tj = 175°C Single Pulse 0.1 1 1 10 100 1000 10 100 VCE (V) VCE (V) Fig. 3 - Forward SOA TC = 25°C, TJ ≤ 175°C; VGE =15V Fig. 4 - Reverse Bias SOA TJ = 175°C; VGE =20V 140 140 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 120 80 VGE = 18V VGE = 15V VGE = 12V 120 100 ICE (A) ICE (A) 100 60 VGE = 10V VGE = 8.0V 80 60 40 40 20 20 0 0 0 2 4 6 8 10 VCE (V) Fig. 5 - Typ. IGBT Output Characteristics TJ = -40°C; tp = ≤60μs 3 1000 www.irf.com © 2014 International Rectifier 0 2 4 6 8 10 VCE (V) Fig. 6 - Typ. IGBT Output Characteristics TJ = 25°C; tp = ≤60μs Submit Datasheet Feedback November 17, 2014 IRGP4650DPbF/IRGP4650D-EPbF 140 140 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 120 80 100 IF (A) ICE (A) 100 120 60 60 40 40 20 20 0 -40°C 25°C 175°C 80 0 0 2 4 6 8 10 0.0 1.0 2.0 Fig. 8 - Typ. Diode Forward Characteristics tp = 80μs 20 20 18 18 16 16 14 14 ICE = 18A VCE (V) VCE (V) Fig. 7 - Typ. IGBT Output Characteristics TJ = 175°C; tp = ≤60μs ICE = 35A 10 ICE = 70A 8 12 ICE = 18A ICE = 35A 10 ICE = 70A 8 6 6 4 4 2 2 0 0 5 10 15 20 5 10 VGE (V) 20 Fig. 10 - Typical VCE vs. VGE TJ = 25°C 20 140 IC, Collector-to-Emitter Current (A) 18 16 14 VCE (V) 15 VGE (V) Fig. 9 - Typical VCE vs. VGE TJ = -40°C 12 ICE = 18A ICE = 35A ICE = 70A 10 8 6 4 2 120 TJ = 25°C 100 80 T J = 175°C 60 40 20 0 0 5 10 15 20 VGE (V) Fig. 11 - Typical VCE vs. VGE TJ = 175°C 4 4.0 VF (V) VCE (V) 12 3.0 www.irf.com © 2014 International Rectifier 4 5 6 7 8 9 10 11 12 13 14 VGE, Gate-to-Emitter Voltage (V) Fig. 12 - Typ. Transfer Characteristics VCE = 50V; tp = 60μs Submit Datasheet Feedback November 17, 2014 IRGP4650DPbF/IRGP4650D-EPbF 4000 1000 3500 2500 Swiching Time (ns) Energy (μJ) 3000 EON 2000 1500 EOFF tdOFF 100 tF 1000 tdON 500 tR 0 10 0 10 20 30 40 50 60 70 0 10 20 30 40 50 60 70 IC (A) IC (A) Fig. 13 - Typ. Energy Loss vs. IC TJ = 175°C; L = 200μH; VCE = 400V, RG = 10Ω; VGE = 15V 3000 Fig. 14 - Typ. Switching Time vs. IC TJ = 175°C; L = 200μH; VCE = 400V, RG = 10Ω; VGE = 15V 1000 2500 Swiching Time (ns) Energy (μJ) EON 2000 EOFF 1500 tdOFF 100 tF tdON 1000 tR 500 10 0 25 50 75 100 0 10 30 40 50 RG (Ω) Rg (Ω) Fig. 15 - Typ. Energy Loss vs. RG TJ = 175°C; L = 210μH; VCE = 400V, ICE = 35A; VGE = 15V Fig. 16 - Typ. Switching Time vs. RG TJ = 175°C; L = 210μH; VCE = 400V, ICE = 35A; VGE = 15V 35 26 RG = 10Ω 30 24 22 RG = 22Ω 25 IRR (A) IRR (A) 20 RG = 47Ω 20 20 18 15 16 RG = 100Ω 10 14 10 20 30 40 50 60 70 0 20 IF (A) Fig. 17 - Typ. Diode IRR vs. IF TJ = 175°C 5 www.irf.com © 2014 International Rectifier 40 60 80 100 RG (Ω) Fig. 18 - Typ. Diode IRR vs. RG TJ = 175°C Submit Datasheet Feedback November 17, 2014 IRGP4650DPbF/IRGP4650D-EPbF 26 2500 24 2250 22 2000 70A QRR (nC) IRR (A) 10Ω 20 35A 22Ω 1750 47Ω 18 1500 16 1250 18A 100Ω 1000 14 200 300 400 500 600 100 200 300 400 500 600 700 800 900 700 diF /dt (A/μs) diF /dt (A/μs) Fig. 20 - Typ. Diode QRR vs. diF/dt VCC = 400V; VGE = 15V; TJ = 175°C Fig. 19 - Typ. Diode IRR vs. diF/dt VCC = 400V; VGE = 15V; IF = 35A; TJ = 175°C 300 20 400 RG = 10Ω Isc 350 15 Time (μs) Energy (μJ) 250 RG = 47Ω 200 10 150 5 75 RG = 100Ω 150 0 0 100 10 20 30 40 50 60 8 70 10 12 16 18 Fig. 22 - VGE vs. Short Circuit Time VCC = 400V; TC = 25°C Fig. 21 - Typ. Diode ERR vs. IF TJ = 175°C 16 VGE, Gate-to-Emitter Voltage (V) 10000 Cies Capacitance (pF) 14 VGE (V) IF (A) 1000 Coes 100 Cres 10 VCES = 400V VCES = 300V 14 12 10 8 6 4 2 0 0 100 200 300 400 500 VCE (V) Fig. 23 - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz 6 Current (A) RG = 22Ω 300 225 Tsc www.irf.com © 2014 International Rectifier 0 10 20 30 40 50 60 70 Q G, Total Gate Charge (nC) Fig. 24 - Typical Gate Charge vs. VGE ICE = 35A; L = 740μH Submit Datasheet Feedback November 17, 2014 IRGP4650DPbF/IRGP4650D-EPbF 1 Thermal Response ( Z thJC ) D = 0.50 0.20 0.1 0.10 0.05 τJ 0.02 0.01 0.01 R1 R1 τJ τ1 R2 R2 R3 R3 τ2 τ1 τ3 τ2 τ4 τ3 τ4 Ci= τi/Ri Ci i/Ri 1E-005 τi (sec) Ri (°C/W) τC τ 0.01041 0.000006 0.15911 0.000142 0.23643 0.002035 0.15465 0.013806 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 R4 R4 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) Thermal Response ( Z thJC ) 10 1 D = 0.50 0.1 0.01 0.001 0.0001 1E-006 0.20 0.10 0.05 τJ 0.02 0.01 R1 R1 τJ τ1 R2 R2 R3 R3 τ1 τ2 τ2 τ3 τ3 0.01716 τ4 τ4 τi (sec) 0.000031 0.35875 0.000517 0.41334 0.004192 0.20121 0.024392 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 Ri (°C/W) τC τ Ci= τi/Ri Ci i/Ri 1E-005 R4 R4 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) 7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 17, 2014 IRGP4650DPbF/IRGP4650D-EPbF L L DUT 0 VCC 80 V + - 1K DUT VCC Rg Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit diode clamp / DUT L 4X DC -5V VCC DUT / DRIVER DUT VCC Rg SCSOA Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit C force R= VCC ICM 100K D1 DUT 22K C sense VCC Rg G force DUT 0.0075μF E sense E force Fig.C.T.5 - Resistive Load Circuit 8 www.irf.com © 2014 International Rectifier Fig.C.T.6 - BVCES Filter Circuit Submit Datasheet Feedback November 17, 2014 IRGP4650DPbF/IRGP4650D-EPbF 600 tf 500 400 60 600 50 500 40 400 30 300 60 TEST CURRENT 50 tr 40 20 30 90% test current 200 5% V CE 10 5% ICE 0 0 5% V CE 10% test current 100 0 -10 0 0.5 1 1.5 -100 2 -10 6.4 6.6 time(μs) QRR Vce (V) 10 0 10% Peak IRR Peak IRR 350 ICE 600 t RR 20 V F (V) 7.2 700 30 -20 9 7 Fig. WF2 - Typ. Turn-on Loss Waveform @ TJ = 175°C using Fig. CT.4 40 -30 -0.3 6.8 time (μs) Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 175°C using Fig. CT.4 -10 0 Eon Loss Eoff Loss -100 -0.5 10 300 500 250 400 200 VCE 300 150 200 100 100 50 0 -0.2 -0.1 0 0.1 0.2 0 -100 -4.5 -50 0.5 5.5 10.5 time (μS) Time (uS) Fig. WF3 - Typ. Diode Recovery Waveform @ TJ = 175°C using Fig. CT.4 Fig. WF4 - Typ. S.C. Waveform @ TJ = 25°C using Fig. CT.3 www.irf.com © 2014 International Rectifier ICE (A) 100 20 ICE (A) 200 V CE (V) 300 ICE (A) VCE (V) 90% ICE Submit Datasheet Feedback November 17, 2014 IRGP4650DPbF/IRGP4650D-EPbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information EXAMPLE: THIS IS AN IRFPE30 WITH AS SEMBLY LOT CODE 5657 ASS EMBLED ON WW 35, 2001 IN THE AS SEMBLY LINE "H" Note: "P" in as sembly line pos ition indicates "Lead-Free" INTERNAT IONAL RECT IFIER LOGO PART NUMBER IRFPE30 56 135H 57 ASS EMBLY LOT CODE DATE CODE YEAR 1 = 2001 WEEK 35 LINE H TO-247AC package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 17, 2014 IRGP4650DPbF/IRGP4650D-EPbF TO-247AD Package Outline Dimensions are shown in millimeters (inches) TO-247AD Part Marking Information EXAMPLE: T HIS IS AN IRGP30B120KD-E WIT H AS S EMBLY LOT CODE 5657 AS S EMBLED ON WW 35, 2000 IN T HE AS S EMBLY LINE "H" Note: "P" in as sembly line pos ition indicates "Lead-Free" INT ERNAT IONAL RECT IFIER LOGO PART NUMBER 56 035H 57 AS S EMBLY LOT CODE DAT E CODE YEAR 0 = 2000 WEEK 35 LINE H TO-247AD package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 11 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 17, 2014 IRGP4650DPbF/IRGP4650D-EPbF Qualification Information† Industrial Qualification Level (per International Rectifier’s internal guidelines) Moisture Sensitivity Level TO-247AC N/A TO-247AD N/A RoHS Compliant Yes † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability †† Highest passing voltage. Revision History Date 11/17/2014 Comments fto I Diode Maximum Forward Current on page 1. • Added note gto switching losses test condition on page 2. • Added note FM IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 12 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 17, 2014