IRGP4660D-EPBF

IRGP4660DPbF IRGP4660D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C IC = 60A, TC = 100°C C C tSC ≥ 5μs, TJ(max) = 175°C G GC VCE(on) typ. = 1.60V @ IC = 48A E n-channel Applications • Industrial Motor Drive • Inverters • UPS • Welding G Gate Positive VCE (ON) Temperature Coefficient 5μs short circuit SOA Lead-Free, RoHS compliant TO-247AC TO-247AD TO-247AD IRGP4660D-EP C Collector E Emitter Benefits Square RBSOA and Maximum Junction Temperature 175°C IRGP4660DPbF IRGP4660D-EPbF E High efficiency in a wide range of applications and switching frequencies Improved reliability due to rugged hard switching performance and higher power capability Excellent current sharing in parallel operation Enables short circuit protection scheme Environmentally friendly Low VCE(ON) and Switching Losses Package Type GC TO-247AC IRGP4660DPbF Features Base part number E Standard Pack Form Quantity Tube 25 Tube 25 Orderable part number IRGP4660DPbF IRGP4660D-EPbF Absolute Maximum Ratings Parameter Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE = 15V Clamped Inductive Load Current, VGE = 20V VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFM VGE Diode Continous Forward Current Diode Continous Forward Current Diode Maximum Forward Current Max. 600 100 60 144 192 100 60 192 ±20 c f Continuous Gate-to-Emitter Voltage PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Transient Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw Units V A V ±30 330 170 -55 to +175 W °C 300 (0.063 in. (1.6mm) from case) 10 lbf·in (1.1 N·m) Thermal Resistance RθJC (IGBT) RθJC (Diode) RθCS RθJA 1 Junction-to-Case (IGBT) Junction-to-Case (Diode) d d Parameter Case-to-Sink (flat, greased surface) Junction-to-Ambient (typical socket mount) www.irf.com © 2014 International Rectifier Min. ––– ––– ––– ––– Submit Datasheet Feedback Typ. ––– ––– 0.24 ––– Max. 0.45 0.92 ––– 40 Units °C/W November 17, 2014 IRGP4660DPbF/IRGP4660D-EPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. V(BR)CES ΔV(BR)CES/ΔTJ Collector-to-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage VCE(on) Collector-to-Emitter Saturation Voltage VGE(th) ΔVGE(th)/ΔTJ gfe ICES Gate Threshold Voltage Threshold Voltage temp. coefficient Forward Transconductance Collector-to-Emitter Leakage Current VFM Diode Forward Voltage Drop IGES Gate-to-Emitter Leakage Current 600 — — — — 4.0 — — — — — — — — 0.30 1.60 1.90 2.00 — -21 32 1.0 450 1.95 1.45 — — V VGE = 0V, IC = 150μA — V/°C VGE = 0V, IC = 1mA (25°C-175°C) 1.90 IC = 48A, VGE = 15V, TJ = 25°C — V IC = 48A, VGE = 15V, TJ = 150°C — IC = 48A, VGE = 15V, TJ = 175°C 6.5 V VCE = VGE, IC = 1.4mA — mV/°C VCE = VGE, IC = 1.0mA (25°C - 175°C) — S VCE = 50V, IC = 48A, PW = 80μs 150 VGE = 0V, VCE = 600V μA 1000 VGE = 0V, VCE = 600V, TJ = 175°C 2.91 IF = 48A V — IF = 48A, TJ = 175°C ±100 nA VGE = ±20V Units Conditions e Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc Eon Eoff Etotal td(on) tr td(off) tf Eon Eoff Etotal td(on) tr td(off) tf Cies Coes Cres Parameter Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. — — — — — — — — — — — — — — — — — — — — Typ. 95 28 35 625 1275 1900 60 40 145 35 1625 1585 3210 55 45 165 45 3025 245 90 Max. 140 42 53 1141 1481 2622 78 56 176 46 — — — — — — — — — — Units RBSOA Reverse Bias Safe Operating Area FULL SQUARE SCSOA Short Circuit Safe Operating Area 5 — — μs Erec trr Irr Reverse Recovery Energy of the Diode Diode Reverse Recovery Time Peak Reverse Recovery Current — — — 845 115 40 — — — μJ ns A nC μJ ns Conditions IC = 48A VGE = 15V VCC = 400V IC = 48A, VCC = 400V, VGE = 15V RG = 10Ω, L = 200μH, LS = 150nH, TJ = 25°C Energy losses include tail & diode reverse recovery μJ IC = 48A, VCC = 400V, VGE=15V RG=10Ω, L=200μH, LS=150nH, TJ = 175°C Energy losses include tail & diode reverse recovery ns IC = 48A, VCC = 400V, VGE = 15V RG = 10Ω, L = 200μH, LS = 150nH TJ = 175°C pF g IC = 48A, VCC = 400V, VGE = 15V RG = 10Ω, L = 200μH, LS = 150nH, TJ = 25°C g VGE = 0V VCC = 30V f = 1.0Mhz TJ = 175°C, IC = 192A VCC = 480V, Vp =600V Rg = 10Ω, VGE = +15V to 0V VCC = 400V, Vp =600V Rg = 10Ω, VGE = +15V to 0V TJ = 175°C VCC = 400V, IF = 48A VGE = 15V, Rg = 10Ω, L =200μH, Ls = 150nH Notes:  ‚ ƒ „ … VCC = 80% (VCES), VGE = 20V, L = 200μH, RG = 10Ω. Rθ is measured at TJ of approximately 90°C. Refer to AN-1086 for guidelines for measuring V(BR)CES safely. Pulse width limited by max. junction temperature. Values influenced by parasitic L and C in measurement. 2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 17, 2014 IRGP4660DPbF/IRGP4660D-EPbF 100 350 300 80 250 200 Ptot (W) IC (A) 60 40 150 100 20 50 0 0 25 50 75 100 125 150 175 25 50 75 100 T C (°C) Fig. 1 - Maximum DC Collector Current vs. Case Temperature 150 175 Fig. 2 - Power Dissipation vs. Case Temperature 1000 1000 100 10μsec 100 IC (A) 100μsec IC (A) 125 T C (°C) 1msec 10 10 DC 1 Tc = 25°C Tj = 175°C Single Pulse 0.1 1 1 10 100 1000 10 100 VCE (V) VCE (V) Fig. 3 - Forward SOA TC = 25°C, TJ ≤ 175°C; VGE =15V 200 180 180 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 120 160 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 140 ICE (A) 140 ICE (A) Fig. 4 - Reverse Bias SOA TJ = 175°C; VGE =15V 200 160 100 80 120 100 80 60 60 40 40 20 20 0 0 0 2 4 6 8 10 0 2 Fig. 5 - Typ. IGBT Output Characteristics TJ = -40°C; tp = 80μs www.irf.com © 2014 International Rectifier 4 6 8 10 VCE (V) VCE (V) 3 1000 Fig. 6 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 80μs Submit Datasheet Feedback November 17, 2014 IRGP4660DPbF/IRGP4660D-EPbF 200 200 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 180 160 160 140 120 -40°c 25°C 175°C 120 IF (A) ICE (A) 140 180 100 100 80 80 60 60 40 40 20 20 0 0 0 2 4 6 8 10 0.0 1.0 2.0 Fig. 8 - Typ. Diode Forward Characteristics tp = 80μs 20 20 18 18 16 16 14 14 ICE = 24A ICE = 48A VCE (V) VCE (V) Fig. 7 - Typ. IGBT Output Characteristics TJ = 175°C; tp = 80μs 10 ICE = 96A 8 12 ICE = 24A ICE = 48A 10 ICE = 96A 8 6 6 4 4 2 2 0 0 5 10 15 20 5 10 VGE (V) 18 180 16 160 14 140 ICE = 24A ICE = 48A ICE = 96A 8 ICE (A) VCE (V) 200 10 20 Fig. 10 - Typical VCE vs. VGE TJ = 25°C 20 12 15 VGE (V) Fig. 9 - Typical VCE vs. VGE TJ = -40°C T J = 25°C T J = 175°C 120 100 80 6 60 4 40 2 20 0 0 5 10 15 20 0 5 VGE (V) Fig. 11 - Typical VCE vs. VGE TJ = 175°C 4 4.0 VF (V) VCE (V) 12 3.0 www.irf.com © 2014 International Rectifier 10 15 VGE (V) Fig. 12 - Typ. Transfer Characteristics VCE = 50V; tp = 10μs Submit Datasheet Feedback November 17, 2014 IRGP4660DPbF/IRGP4660D-EPbF 6000 1000 5000 Swiching Time (ns) EOFF Energy (μJ) 4000 EON 3000 2000 tdOFF 100 tdON tF tR 1000 0 10 0 50 100 150 0 20 40 60 80 100 IC (A) IC (A) Fig. 13 - Typ. Energy Loss vs. IC TJ = 175°C; L = 200μH; VCE = 400V, RG = 10Ω; VGE = 15V Fig. 14 - Typ. Switching Time vs. IC TJ = 175°C; L = 200μH; VCE = 400V, RG = 10Ω; VGE = 15V 5000 1000 4500 tdOFF EOFF Swiching Time (ns) Energy (μJ) 4000 EON 3500 3000 2500 tR tdON 100 tF 2000 1500 1000 10 0 25 50 75 100 125 0 25 Fig. 15 - Typ. Energy Loss vs. RG TJ = 175°C; L = 200μH; VCE = 400V, ICE = 48A; VGE = 15V 100 125 Fig. 16 - Typ. Switching Time vs. RG TJ = 175°C; L = 200μH; VCE = 400V, ICE = 48A; VGE = 15V 45 45 40 40 RG = 10Ω 35 35 30 RG = 22Ω 25 20 IRR (A) IRR (A) 75 RG (Ω) Rg (Ω) RG = 47Ω 15 RG = 100Ω 10 30 25 20 15 5 0 10 0 20 40 60 80 100 0 25 IF (A) Fig. 17 - Typ. Diode IRR vs. IF TJ = 175°C 5 50 www.irf.com © 2014 International Rectifier 50 75 100 125 RG (Ω) Fig. 18 - Typ. Diode IRR vs. RG TJ = 175°C Submit Datasheet Feedback November 17, 2014 IRGP4660DPbF/IRGP4660D-EPbF 45 4000 40 3500 96A 3000 QRR (nC) IRR (A) 35 30 25 2500 100Ω 22Ω 47Ω 2000 20 10Ω 48A 24A 1500 15 1000 10 0 200 400 600 800 0 1000 500 diF /dt (A/μs) 1500 Fig. 20 - Typ. Diode QRR vs. diF/dt VCC = 400V; VGE = 15V; TJ = 175°C Fig. 19 - Typ. Diode IRR vs. diF/dt VCC = 400V; VGE = 15V; IF = 48A; TJ = 175°C 18 400 RG = 10Ω 16 350 RG = 22Ω 14 300 12 250 10 200 8 150 6 100 900 800 1000 diF /dt (A/μs) 500 400 RG = 47Ω 300 RG = 100Ω 200 100 0 50 4 0 20 40 60 80 100 8 10 12 IF (A) 16 18 Fig. 22 - VGE vs. Short Circuit Time VCC = 400V; TC = 25°C 10000 16 VGE, Gate-to-Emitter Voltage (V) Cies Capacitance (pF) 14 VGE (V) Fig. 21 - Typ. Diode ERR vs. IF TJ = 175°C 1000 Coes 100 Cres 10 V CES = 300V 14 V CES = 400V 12 10 8 6 4 2 0 0 20 40 60 80 100 VCE (V) Fig. 23 - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz 6 Current (A) Energy (μJ) 600 Time (μs) 700 www.irf.com © 2014 International Rectifier 0 25 50 75 100 Q G, Total Gate Charge (nC) Fig. 24 - Typical Gate Charge vs. VGE ICE = 48A; L = 600μH Submit Datasheet Feedback November 17, 2014 IRGP4660DPbF/IRGP4660D-EPbF 1 Thermal Response ( Z thJC ) D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 0.01 τJ R1 R1 τJ τ1 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 R2 R2 τ2 τ1 R3 R3 τ3 τ2 τC τ τ3 Ri (°C/W) τi (sec) 0.0872 0.000114 0.1599 0.001520 0.2020 Ci= τi/Ri Ci i/Ri 0.020330 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) Thermal Response ( Z thJC ) 10 1 D = 0.50 0.20 0.10 0.05 0.1 0.02 0.01 0.01 τJ SINGLE PULSE ( THERMAL RESPONSE ) 0.001 0.0001 1E-006 1E-005 0.0001 R1 R1 τJ τ1 τ1 R2 R2 τ2 R3 R3 τ3 τ2 Ci= τi/Ri Ci i/Ri τC τ τ3 Ri (°C/W) τi (sec) 0.2774 0.000908 0.3896 0.2540 0.003869 0.030195 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) 7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 17, 2014 IRGP4660DPbF/IRGP4660D-EPbF L L DUT 0 VCC 80 V + - 1K DUT VCC Rg Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit diode clamp / DUT L 4X DC -5V VCC DUT / DRIVER DUT VCC Rg RSH Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit C force R= VCC ICM 100K D1 DUT C sense VCC Rg 22K G force DUT 0.0075μF E sense E force Fig.C.T.5 - Resistive Load Circuit 8 www.irf.com © 2014 International Rectifier Fig.C.T.6 - BVCES Filter Circuit Submit Datasheet Feedback November 17, 2014 140 700 140 600 120 600 120 500 100 500 400 80 400 60 90% ICE 200 40 tr TEST CURRENT 300 20 5% ICE 0 EOFF Loss -100 -0.40 0.10 0.60 200 40 100 20 0 0 EON -20 1.10 -100 6.20 6.40 6.60 6.80 -20 7.00 Time (μs) Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 175°C using Fig. CT.4 Fig. WF2 - Typ. Turn-on Loss Waveform @ TJ = 175°C using Fig. CT.4 600 60 50 600 500 500 40 QRR 30 VCE (V) 10 0 -10 10% Peak IRR Peak IRR -20 ICE VCE 400 tRR 20 IRR (A) 5% V CE 10% test current Time(μs) 400 300 300 200 200 100 100 0 -30 -40 -0.15 -0.05 0.05 0.15 0.25 time (μS) Fig. WF3 - Typ. Diode Recovery Waveform @ TJ = 175°C using Fig. CT.4 9 60 www.irf.com © 2014 International Rectifier ICE (A) 0 80 90% test 5% V CE 100 100 ICE (A) tf 300 VCE (V) 700 I CE (A) VCE (V) IRGP4660DPbF/IRGP4660D-EPbF 0 -100 -5.00 0.00 5.00 -100 10.00 time (μS) Fig. WF4 - Typ. S.C. Waveform @ TJ = 25°C using Fig. CT.3 Submit Datasheet Feedback November 17, 2014 IRGP4660DPbF/IRGP4660D-EPbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information EXAMPLE: T HIS IS AN IRFPE30 WIT H ASS EMBLY LOT CODE 5657 AS SEMBLED ON WW 35, 2001 IN T HE AS SEMBLY LINE "H" Note: "P" in ass embly line pos ition indicates "Lead-Free" INTERNATIONAL RECTIFIER LOGO PART NUMBER IRFPE30 56 135H 57 ASS EMBLY LOT CODE DAT E CODE YEAR 1 = 2001 WEEK 35 LINE H TO-247AC package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 17, 2014 IRGP4660DPbF/IRGP4660D-EPbF TO-247AD Package Outline Dimensions are shown in millimeters (inches) TO-247AD Part Marking Information EXAMPLE: T HIS IS AN IRGP30B120KD-E WIT H AS S EMBLY LOT CODE 5657 AS S EMBLED ON WW 35, 2000 IN T HE AS S EMBLY LINE "H" Note: "P" in as sembly line pos ition indicates "Lead-Free" INT ERNAT IONAL RECT IFIER LOGO PART NUMBER 56 035H 57 AS S EMBLY LOT CODE DAT E CODE YEAR 0 = 2000 WEEK 35 LINE H TO-247AD package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 11 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 17, 2014 IRGP4660DPbF/IRGP4660D-EPbF Qualification Information† Industrial Qualification Level (per International Rectifier’s internal guidelines) Moisture Sensitivity Level TO-247AC N/A TO-247AD N/A †† ESD Class 2 (+/- 4000V ) Human Body Model (per JEDEC JESD22-A114) Class IV (+/- 1125V )†† Charged Device Model (per JEDEC JESD22-C101) RoHS Compliant Yes † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability †† Highest passing voltage. Revision History Date 11/17/2014 Comments fto I Diode Maximum Forward Current on page 1. • Added note gto switching losses test condition on page 2. • Added note FM IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 12 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 17, 2014