IRGP4690DPBF

IRGP4690DPbF IRGP4690D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C IC = 90A, TC = 100°C C C tSC ≥ 5μs, TJ(max) = 175°C G VCE(on) typ. = 1.70V @ IC = 75A GC E E GC TO-247AD IRGP4690D-EP TO-247AC IRGP4690DPbF n-channel Applications • Industrial Motor Drive • Inverters • UPS • Welding E G Gate C Collector Features E Emitter Benefits High efficiency in a wide range of applications and switching frequencies Improved reliability due to rugged hard switching performance and higher power capability Excellent current sharing in parallel operation Enables short circuit protection scheme Environmentally friendly Low VCE(ON) and Switching Losses Square RBSOA and Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient 5μs short circuit SOA Lead-Free, RoHS compliant Base part number Package Type IRGP4690DPbF IRGP4690D-EPbF TO-247AC TO-247AD Standard Pack Form Quantity Tube 25 Tube 25 Orderable part number IRGP4690DPbF IRGP4690D-EPbF Absolute Maximum Ratings VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Parameter Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE = 15V Clamped Inductive Load Current, VGE = 20V Diode Continous Forward Current Diode Continous Forward Current Diode Maximum Forward Current Max. 600 140 90 225 300 70 45 300 ±20 c f Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw Units V A V ±30 454 227 -55 to +175 W °C 300 (0.063 in. (1.6mm) from case) 10 lbf·in (1.1 N·m) Thermal Resistance RθJC (IGBT) RθJC (Diode) RθCS RθJA 1 Parameter Junction-to-Case (IGBT) Junction-to-Case (Diode) d d Case-to-Sink (flat, greased surface) Junction-to-Ambient (typical socket mount) www.irf.com © 2014 International Rectifier Min. ––– ––– ––– ––– Typ. ––– ––– 0.24 ––– Submit Datasheet Feedback Max. 0.33 1.0 ––– 40 Units °C/W November 14, 2014 IRGP4690DPbF/IRGP4690D-EPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES ΔV(BR)CES/ΔTJ Parameter Collector-to-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage VCE(on) Collector-to-Emitter Saturation Voltage VGE(th) ΔVGE(th)/ΔTJ gfe ICES Gate Threshold Voltage Threshold Voltage temp. coefficient Forward Transconductance Collector-to-Emitter Leakage Current VFM Diode Forward Voltage Drop Gate-to-Emitter Leakage Current IGES Switching Characteristics @ TJ = 25°C (unless otherwise specified) Min. 600 — — — — 4.0 — — — — — — — Typ. — 0.30 1.70 2.0 2.1 — -21 50 1.0 1040 2.23 1.8 — Max. — — 2.10 — — 6.5 — — 100 — 3.0 — ±200 Units V V/°C Conditions VGE = 0V, IC = 100μA VGE = 0V, IC = 2.0mA (25°C-175°C) IC = 75A, VGE = 15V, TJ = 25°C V IC = 75A, VGE = 15V, TJ = 150°C IC = 75A, VGE = 15V, TJ = 175°C V VCE = VGE, IC = 2.1mA mV/°C VCE = VGE, IC = 2.1mA (25°C - 175°C) S VCE = 50V, IC = 75A, PW = 60μs μA VGE = 0V, VCE = 600V VGE = 0V, VCE = 600V, TJ = 175°C V IF = 75A IF = 75A, TJ = 175°C nA VGE = ±20V Min. — — — — — — — — — — — — — — — — — — — — Typ. 150 40 60 2465 2155 4620 50 70 200 60 3870 2815 6685 50 70 240 70 4440 245 130 Max. — — — — — — — — — — — — — — — — — — — — Units Qg Qge Qgc Eon Eoff Etotal td(on) tr td(off) tf Eon Eoff Etotal td(on) tr td(off) tf Cies Coes Cres Parameter Total Gate Charge Gate-to-Emitter Charge Gate-to-Collector Charge Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance RBSOA Reverse Bias Safe Operating Area FULL SQUARE SCSOA Short Circuit Safe Operating Area 5 — — μs Erec trr Irr Reverse Recovery Energy of the Diode Diode Reverse Recovery Time Peak Reverse Recovery Current — — — 470 155 27 — — — μJ ns A nC μJ ns μJ ns pF e Conditions IC = 75A VGE = 15V VCC = 400V IC = 75A, VCC = 400V, VGE = 15V RG = 10Ω, L = 200μH, TJ = 25°C Energy losses include tail & diode reverse recovery g IC = 75A, VCC = 400V, VGE=15V RG=10Ω, L=200μH,TJ = 175°C Energy losses include tail & diode reverse recovery g VGE = 0V VCC = 30V f = 1.0Mhz TJ = 175°C, IC = 300A VCC = 480V, Vp ≤ 600V Rg = 10Ω, VGE = +20V to 0V VCC = 400V, Vp ≤ 600V Rg = 10Ω, VGE = +15V to 0V TJ = 175°C VCC = 400V, IF = 75A VGE = 15V, Rg = 10Ω, L =60μH Notes:  ‚ ƒ „ … VCC = 80% (V CES), VGE = 20V, L = 10μH, RG = 10Ω. Rθ is measured at TJ of approximately 90°C. Refer to AN-1086 for guidelines for measuring V(BR)CES safely. Pulse width limited by max. junction temperature. Values influenced by parasitic L and C in measurement. 2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 14, 2014 IRGP4690DPbF/IRGP4690D-EPbF 140 400 120 300 80 Ptot (W) IC (A) 100 60 200 40 100 20 0 0 25 50 75 100 125 150 175 25 50 75 100 150 175 T C (°C) T C (°C) Fig. 1 - Maximum DC Collector Current vs. Case Temperature Fig. 2 - Power Dissipation vs. Case Temperature 1000 1000 100μsec 10μsec 100 100 10 IC (A) 1msec IC (A) 125 DC 10 1 Tc = 25°C Tj = 175°C Single Pulse 1 0.1 1 10 100 10 1000 VCE (V) Fig. 3 - Forward SOA TC = 25°C, TJ ≤ 175°C; VGE =15V 300 250 250 VGE = 18V VGE = 15V ICE (A) ICE (A) VGE = 8.0V VGE = 12V VGE = 10V 150 100 100 50 50 VGE = 8.0V 0 0 0 2 4 6 8 10 VCE (V) Fig. 5 - Typ. IGBT Output Characteristics TJ = -40°C; tp = ≤60μs 3 VGE = 18V VGE = 15V 200 VGE = 12V VGE = 10V 150 1000 Fig. 4 - Reverse Bias SOA TJ = 175°C; VGE =20V 300 200 100 VCE (V) www.irf.com © 2014 International Rectifier 0 2 4 6 8 10 VCE (V) Fig. 6 - Typ. IGBT Output Characteristics TJ = 25°C; tp = ≤60μs Submit Datasheet Feedback November 14, 2014 IRGP4690DPbF/IRGP4690D-EPbF 300 300 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 250 200 IF (A) ICE (A) 200 250 150 150 100 100 50 50 0 -40°C 25°C 175°C 0 0 2 4 6 8 10 0.0 1.0 2.0 Fig. 8 - Typ. Diode Forward Characteristics tp = 80μs 20 20 18 18 16 16 14 14 ICE = 38A ICE = 75A VCE (V) VCE (V) Fig. 7 - Typ. IGBT Output Characteristics TJ = 175°C; tp = ≤60μs 10 ICE = 150A 8 12 ICE = 38A ICE = 75A 10 ICE = 150A 8 6 6 4 4 2 2 0 0 5 10 15 20 5 10 VGE (V) 20 Fig. 10 - Typical VCE vs. VGE TJ = 25°C 300 20 IC, Collector-to-Emitter Current (A) 18 16 14 VCE (V) 15 VGE (V) Fig. 9 - Typical VCE vs. VGE TJ = -40°C 12 ICE = 38A ICE = 75A ICE = 150A 10 8 6 4 2 250 T J = 25°C T J = 175°C 200 150 100 50 0 0 5 10 15 20 VGE (V) Fig. 11 - Typical VCE vs. VGE TJ = 175°C 4 4.0 VF (V) VCE (V) 12 3.0 www.irf.com © 2014 International Rectifier 4 6 8 10 12 14 16 18 VGE, Gate-to-Emitter Voltage (V) Fig. 12 - Typ. Transfer Characteristics VCE = 50V; tp = 60μs Submit Datasheet Feedback November 14, 2014 IRGP4690DPbF/IRGP4690D-EPbF 12000 1000 10000 Swiching Time (ns) tdOFF Energy (μJ) 8000 EON 6000 4000 EOFF tF 100 tdON tR 2000 0 10 0 25 50 75 100 125 150 0 50 100 150 IC (A) IC (A) Fig. 13 - Typ. Energy Loss vs. IC TJ = 175°C; L = 200μH; VCE = 400V, RG = 10Ω; VGE = 15V 11000 Fig. 14 - Typ. Switching Time vs. IC TJ = 175°C; L = 200μH; VCE = 400V, RG = 10Ω; VGE = 15V 10000 Swiching Time (ns) 9000 Energy (μJ) 1000 7000 EON 5000 EOFF tdOFF tF tR 100 3000 tdON 1000 10 0 25 50 75 100 0 20 60 80 100 120 RG (Ω) Rg (Ω) Fig. 15 - Typ. Energy Loss vs. RG TJ = 175°C; L = 200μH; VCE = 400V, ICE = 75A; VGE = 15V Fig. 16 - Typ. Switching Time vs. RG TJ = 175°C; L = 200μH; VCE = 400V, ICE = 75A; VGE = 15V 35 30 RG = 5.0Ω 30 RG = 10Ω 25 25 IRR (A) IRR (A) 40 RG = 47Ω 20 20 15 RG = 100Ω 10 15 20 40 60 80 100 120 140 160 IF (A) Fig. 17 - Typ. Diode IRR vs. IF TJ = 175°C 5 www.irf.com © 2014 International Rectifier 0 20 40 60 80 100 RG (Ω) Fig. 18 - Typ. Diode IRR vs. RG TJ = 175°C Submit Datasheet Feedback November 14, 2014 IRGP4690DPbF/IRGP4690D-EPbF 30 3000 5.0Ω 10Ω 150A 47Ω 2500 IRR (A) QRR (nC) 25 100Ω 75A 38A 2000 20 1500 15 200 300 400 500 600 200 700 300 400 500 600 700 diF /dt (A/μs) diF /dt (A/μs) Fig. 20 - Typ. Diode QRR vs. diF/dt VCC = 400V; VGE = 15V; TJ = 175°C Fig. 19 - Typ. Diode IRR vs. diF/dt VCC = 400V; VGE = 15V; IF = 75A; TJ = 175°C 400 800 20 RG = 10Ω 350 Tsc 15 Time (μs) 250 RG = 47Ω 200 Isc 10 400 5 200 RG = 100Ω 150 100 0 0 10 20 30 40 50 60 70 8 10 12 IF (A) 16 18 Fig. 22 - VGE vs. Short Circuit Time VCC = 400V; TC = 25°C 10000 16 VGE, Gate-to-Emitter Voltage (V) Cies Capacitance (pF) 14 VGE (V) Fig. 21 - Typ. Diode ERR vs. IF TJ = 175°C 1000 Coes 100 Cres 10 VCES = 400V VCES = 300V 14 12 10 8 6 4 2 0 0 100 200 300 400 500 VCE (V) Fig. 23 - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz 6 Current (A) Energy (μJ) 600 RG = 22Ω 300 www.irf.com © 2014 International Rectifier 0 20 40 60 80 100 120 140 160 Q G, Total Gate Charge (nC) Fig. 24 - Typical Gate Charge vs. VGE ICE = 75A; L = 485μH Submit Datasheet Feedback November 14, 2014 IRGP4690DPbF/IRGP4690D-EPbF Thermal Response ( Z thJC ) 1 D = 0.50 0.1 0.20 0.10 0.05 0.01 0.02 0.01 τJ R1 R1 τJ τ1 R3 R3 R4 R4 τ2 τ1 τ2 τ3 τ3 τ4 τi (sec) Ri (°C/W) τC τ τ4 Ci= τi/Ri Ci i/Ri SINGLE PULSE ( THERMAL RESPONSE ) 0.001 R2 R2 0.00738 0.000009 0.09441 0.000179 0.13424 0.002834 0.09294 0.0182 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) Thermal Response ( Z thJC ) 10 1 D = 0.50 0.20 0.10 0.05 0.1 τJ 0.02 0.01 0.01 R1 R1 τJ τ1 R2 R2 R3 R3 τ2 τ1 τ2 τ3 τ3 1E-005 τ4 τ4 0.02738 τi (sec) 0.000053 0.34077 0.000485 0.41380 0.005203 0.22819 0.034407 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 Ri (°C/W) τC τ Ci= τi/Ri Ci i/Ri 0.001 R4 R4 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) 7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 14, 2014 IRGP4690DPbF/IRGP4690D-EPbF L L DUT 0 VCC 80 V + - 1K DUT VCC Rg Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit diode clamp / DUT L 4X DC -5V VCC DUT / DRIVER DUT VCC Rg SCSOA Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit C force R = VCC ICM 100K D1 DUT 22K C sense VCC Rg G force DUT 0.0075μF E sense E force Fig.C.T.5 - Resistive Load Circuit 8 www.irf.com © 2014 International Rectifier Fig.C.T.6 - BVCES Filter Circuit Submit Datasheet Feedback November 14, 2014 IRGP4690DPbF/IRGP4690D-EPbF 120 600 100 500 400 80 400 300 60 300 60 200 40 200 40 600 120 tf tr VCE (V) ICE (A) VCE (V) 90% ICE 5% V CE 100 100 20 100 TEST CURRENT 90% ICE 80 10% ICE 5% V CE ICE (A) 500 20 5% ICE 0 0 0 -100 -0.4 -100 -20 -0.2 0.0 0.2 0.4 -20 7.6 0.6 7.8 time(μs) QRR 60 50 600 600 VCE 500 20 10 Peak IRR -30 400 300 300 ICE 200 200 100 100 0 -40 -50 -0.20 -0.10 0.00 0.10 0.20 0.30 0.40 time (μS) Fig. WF3 - Typ. Diode Recovery Waveform @ TJ = 175°C using Fig. CT.4 www.irf.com © 2014 International Rectifier ICE (A) 400 30 Vce (V) V F (V) 700 t RR 0 9 700 500 40 -10 -20 8.2 Fig. WF2 - Typ. Turn-on Loss Waveform @ TJ = 175°C using Fig. CT.4 90 70 8.0 time (μs) Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 175°C using Fig. CT.4 80 0 Eon Loss Eof f Loss 0 -100 -100 -3 0 3 6 9 12 Time (uS) Fig. WF4 - Typ. S.C. Waveform @ TJ = 25°C using Fig. CT.3 Submit Datasheet Feedback November 14, 2014 IRGP4690DPbF/IRGP4690D-EPbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information EXAMPLE: T HIS IS AN IRFPE30 WIT H ASS EMBLY LOT CODE 5657 AS SEMBLED ON WW 35, 2001 IN T HE AS SEMBLY LINE "H" Note: "P" in ass embly line pos ition indicates "Lead-Free" INTERNATIONAL RECTIFIER LOGO PART NUMBER IRFPE30 56 135H 57 ASS EMBLY LOT CODE DAT E CODE YEAR 1 = 2001 WEEK 35 LINE H TO-247AC package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 14, 2014 IRGP4690DPbF/IRGP4690D-EPbF TO-247AD Package Outline Dimensions are shown in millimeters (inches) TO-247AD Part Marking Information EXAMPLE: T HIS IS AN IRGP30B120KD-E WIT H AS S EMBLY LOT CODE 5657 AS S EMBLED ON WW 35, 2000 IN T HE AS S EMBLY LINE "H" Note: "P" in as sembly line position indicates "Lead-Free" INT ERNAT IONAL RECT IFIER LOGO PART NUMBER 56 035H 57 AS S EMBLY LOT CODE DAT E CODE YEAR 0 = 2000 WEEK 35 LINE H TO-247AD package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 11 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 14, 2014 IRGP4690DPbF/IRGP4690D-EPbF † Qualification Information Industrial Qualification Level (per International Rectifier’s internal guidelines) Moisture Sensitivity Level TO-247AC N/A TO-247AD N/A †† ESD Human Body Model Class 3A (+/- 4000V ) (per JEDEC JESD22-A114) Charged Device Model Class C5 (+/- 1125V )†† (per JEDEC JESD22-C101) RoHS Compliant Yes † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability †† Highest passing voltage. Revision History Date 11/14/2014 Comments fto I Diode Maximum Forward Current on page 1. • Added note gto switching losses test condition on page 2. • Added note FM IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 12 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 14, 2014