IRGP4750DPBF

IRGP4750DPbF IRGP4750D-EPbF   Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V     C IC = 50A, TC =100°C tSC 5.5µs, TJ(max) = 175°C E G VCE(ON) typ. = 1.7V @ IC = 35A C G IRGP4750DPbF  TO‐247AC  E n-channel Applications  Industrial Motor Drive  UPS  Solar Inverters  Welding G Gate C Collector Features G C E IRGP4750D‐EPbF  TO‐247AD  E Emitter Benefits Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient High Efficiency in a Wide Range of Applications Lead-Free, RoHs compliant Environmentally friendly Base part number Package Type IRGP4750DPbF IRGP4750D-EPbF TO-247AC TO-247AD Rugged Transient Performance Increased Reliability Excellent Current Sharing in Parallel Operation Standard Pack Form Quantity Tube 25 Tube 25 Orderable Part Number IRGP4750DPbF IRGP4750D-EPbF Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE = 15V Clamped Inductive Load Current, VGE = 20V  Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current  Continuous Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw Max. Units 650 70 50 105 140 80 50 140 ±20 273 136 -40 to +175 V A V W 300 (0.063 in. (1.6mm) from case) 10 lbf·in (1.1 N·m) C Thermal Resistance RJC (IGBT) RJC (Diode) RCS RJA 1 Parameter Thermal Resistance Junction-to-Case-(each IGBT)  Thermal Resistance Junction-to-Case-(each Diode)  Thermal Resistance, Case-to-Sink (flat, greased surface) Thermal Resistance, Junction-to-Ambient (typical socket mount) www.irf.com © 2014 International Rectifier Min. ––– ––– ––– ––– Submit Datasheet Feedback Typ. ––– ––– 0.24 ––– Max. 0.55 0.95 ––– 40 Units °C/W November 13, 2014 IRGP4750DPbF/IRGP4750D-EPbF   Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES V(BR)CES/TJ Parameter Collector-to-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Min. 650 — Typ. — 0.72 — 1.7 — 2.1 Gate Threshold Voltage 5.5 — VGE(th) Threshold Voltage Temperature Coeff. — -18 VGE(th)/TJ gfe Forward Transconductance — 23 — 1.0 ICES Collector-to-Emitter Leakage Current — 1.0 — — IGES Gate-to-Emitter Leakage Current — 1.6 VF   Diode Forward Voltage Drop   — 1.3 Switching Characteristics @ TJ = 25°C (unless otherwise specified) Max. — — 2.0 IC = 35A, VGE = 15V, TJ = 25°C V — IC = 35A, VGE = 15V, TJ = 175°C 7.4 V VCE = VGE, IC = 1.4mA — mV/°C VCE = VGE, IC = 1.4mA (25°C-175°C) — S VCE = 50V, IC = 35A, PW = 20µs 35 µA VGE = 0V, VCE = 650V — mA VGE = 0V, VCE = 650V, TJ = 175°C ±100 nA VGE = ±20V 2.1 IF = 35A V — IF = 35A, TJ = 175°C VCE(on) Collector-to-Emitter Saturation Voltage Qg Qge Qgc Eon Eoff Etotal td(on) tr td(off) tf Eon Parameter Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Eoff Etotal td(on) tr td(off) tf Cies Coes Cres Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance RBSOA Reverse Bias Safe Operating Area SCSOA   Short Circuit Safe Operating Area   5.5  —  —  Erec trr Irr Reverse Recovery Energy of the Diode Diode Reverse Recovery Time Peak Reverse Recovery Current — — — 380 150 27 — — — Min. — — — — — — — — — — — Typ. 70 20 30 1.3 0.5 1.8 50 30 105 20 2.4 — — — — — — — — — 0.9 3.3 45 30 120 70 2200 190 60 Units Conditions V VGE = 0V, IC = 100µA  V/°C VGE = 0V, IC = 2.0mA (25°C-175°C) Max Units Conditions 105 IC = 35A 30 nC VGE = 15V VCC = 400V 45 2.2 0.8 mJ   IC = 35A, VCC = 400V, VGE=15V 3.0 RG = 10, TJ = 25°C 70 Energy losses include tail & diode 50 ns  reverse recovery  120 40 — — — — — — — — — — FULL SQUARE mJ  ns IC = 35A, VCC = 400V, VGE=15V RG = 10, TJ = 175°C Energy losses include tail & diode reverse recovery   VGE = 0V VCC = 30V f = 1.0MHz TJ = 175°C, IC = 140A VCC = 520V, Vp ≤ 650V VGE = +20V to 0V TJ = 150°C,VCC = 400V, Vp ≤ 650V µs   V = +15V to 0V GE pF µJ ns A TJ = 175°C VCC = 400V, IF = 35A VGE = 15V, Rg = 10 Notes:       VCC = 80% (VCES), VGE = 20V. R is measured at TJ of approximately 90°C. Refer to AN-1086 for guidelines for measuring V(BR)CES safely. Maximum limits are based on statistical sample size characterization. Pulse width limited by max. junction temperature. Values influenced by parasitic L and C in measurement. 2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 13, 2014 IRGP4750DPbF/IRGP4750D-EPbF   80 For both: Duty cycle : 50% Tj = 175°C Tcase = 100°C Gate drive as specified Power Dissipation = 136W Load Current ( A ) 70 60 50 Square Wave: VCC 40 I 30 20 Diode as specified 10 0.1 1 10 100 f , Frequency ( kHz ) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 80 300 250 60 Ptot (W) IC (A) 200 40 150 100 20 50 0 0 25 50 75 100 125 150 175 25 TC (°C) 75 100 125 150 175 TC (°C) Fig. 3 - Power Dissipation vs. Case Temperature Fig. 2 - Maximum DC Collector Current vs. Case Temperature 1000 1000 100 10µsec 100 100µsec IC (A) IC (A) 50 10 1msec 10 DC 1 Tc = 25°C Tj = 175°C Single Pulse 1 0.1 1 10 100 1000 VCE (V) Fig. 4 - Forward SOA TC = 25°C; TJ ≤ 175°C; VGE = 15V 3 www.irf.com © 2014 International Rectifier 10 100 1000 VCE (V) Fig. 5 - Reverse Bias SOA TJ = 175°C; VGE = 20V Submit Datasheet Feedback November 13, 2014 IRGP4750DPbF/IRGP4750D-EPbF   140 140 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 120 100 100 80 ICE (A) 80 ICE (A) VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 120 60 60 40 40 20 20 0 0 0 2 4 6 8 10 0 2 4 V CE (V) 140 Fig. 7 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 20µs 120 100 IF (A) ICE (A) 80 60 40 80 60 20 0 0 2 4 6 8 0 10 0.0 V CE (V) 0.5 1.0 1.5 2.0 2.5 3.0 V F (V) Fig. 9 - Typ. Diode Forward Voltage Drop Characteristics Fig. 8 - Typ. IGBT Output Characteristics TJ = 175°C; tp = 20µs 10 10 8 8 ICE = 18A ICE = 35A ICE = 70A 6 VCE (V) VCE (V) -40°C 25°C 175°C 40 20 4 ICE = 18A ICE = 35A 6 ICE = 70A 4 2 2 0 0 5 10 15 20 V GE (V) Fig. 10 - Typical VCE vs. VGE TJ = -40°C 4 10 140 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 100 8 V CE (V) Fig. 6 - Typ. IGBT Output Characteristics TJ = -40°C; tp = 20µs 120 6 www.irf.com © 2014 International Rectifier 5 10 15 20 V GE (V) Fig. 11 - Typical VCE vs. VGE TJ = 25°C Submit Datasheet Feedback November 13, 2014 IRGP4750DPbF/IRGP4750D-EPbF   10 140 6 ICE = 18A ICE = 35A 100 ICE = 70A 80 ICE (A) VCE (V) TJ = 25°C TJ = 175°C 120 8 4 60 40 2 20 0 0 5 10 15 20 4 6 8 10 V GE (V) 12 14 16 V GE (V) Fig. 13 - Typ. Transfer Characteristics VCE = 50V; tp = 20µs Fig. 12 - Typical VCE vs. VGE TJ = 175°C 8 1000 7 Energy (mJ) 5 Swiching Time (ns) 6 EON 4 3 EOFF 2 tF tdOFF 100 tdON tR 10 1 0 1 0 10 20 30 40 50 60 70 0 10 20 30 IC (A) 40 50 60 70 IC (A) Fig. 14 - Typ. Energy Loss vs. IC TJ = 175°C; ; VCE = 400V, RG = 10; VGE = 15V Fig. 15 - Typ. Switching Time vs. IC TJ = 175°C; VCE = 400V, RG = 10; VGE = 15V 6 1000 5 EON 4 Energy (mJ) Swiching Time (ns) tdOFF 3 2 tdON 100 tF tR EOFF 1 0 10 0 20 40 60 80 100 0 20 40 Rg () Fig. 16 - Typ. Energy Loss vs. RG TJ = 175°C; VCE = 400V, ICE = 35A; VGE = 15V 5 www.irf.com © 2014 International Rectifier 60 80 100 RG () Fig. 17 - Typ. Switching Time vs. RG TJ = 175°C; VCE = 400V, ICE = 35A; VGE = 15V Submit Datasheet Feedback November 13, 2014 IRGP4750DPbF/IRGP4750D-EPbF   40 45 RG = 5 35 30 IRR (A) IRR (A) RG = 10 25 20 RG = 100 15 10 RG = 47 0 5 10 20 30 40 50 60 0 70 20 40 60 100 RG ( IF (A) Fig. 19 - Typ. Diode IRR vs. RG TJ = 175°C Fig. 18 - Typ. Diode IRR vs. IF TJ = 175°C 40 5000 30 4000 QRR (nC) 70A IRR (A) 80 20 3000 35A  10    2000 0 0 200 400 600 800 1000 18A 1000 1200 0 200 400 diF /dt (A/µs) 600 800 1000 1200 1400 diF /dt (A/µs) Fig. 20 - Typ. Diode IRR vs. diF/dt VCC = 400V; VGE = 15V; IF = 35A; TJ = 175°C Fig. 21 - Typ. Diode QRR vs. diF/dt VCC = 400V; VGE = 15V; TJ = 175°C 25 800 180 RG = 5 RG = 10 RG = 47 20 140 Time (µs) RG = 100 400 200 Tsc 15 100 10 60 5 0 0 10 20 30 40 50 60 70 80 IF (A) Fig. 22 - Typ. Diode ERR vs. IF TJ = 175°C 6 Isc www.irf.com © 2014 International Rectifier Current (A) Energy (µJ) 600 20 9 10 11 12 13 14 15 16 VGE (V) Fig. 23 - VGE vs. Short Circuit Time VCC = 400V; TC = 150°C Submit Datasheet Feedback November 13, 2014 IRGP4750DPbF/IRGP4750D-EPbF   10000 VGE, Gate-to-Emitter Voltage (V) 16 Cies Capacitance (pF) 1000 100 Coes Cres 10 14 VCES = 400V VCES = 300V 12 10 8 6 4 2 1 0 0 100 200 300 400 500 600 0 10 VCE (V) 20 30 40 50 60 70 80 Q G, Total Gate Charge (nC) Fig. 25 - Typical Gate Charge vs. VGE ICE = 35A Fig. 24 - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz 1 Thermal Response ( ZthJC ) D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 J R1 R1 J 1 R3 R3 C 2 1 3 2 C 3 Ci= iRi Ci= iRi SINGLE PULSE ( THERMAL RESPONSE ) 0.001 R2 R2 Ri (°C/W) i (sec) 0.16631 0.000327 0.23758 0.003309 0.14552 0.01848 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 26 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) 10 Thermal Response ( ZthJC ) 1 D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 0.01 J R1 R1 J 1 R2 R2 R3 R3 R4 R4 C 2 1 2 3 3 4 4 Ci= iRi Ci= iRi 0.001 1E-005 0.0001 0.001 i (sec) 0.01502 0.000029 0.26877 0.000327 0.40240 0.003652 0.26426 0.028923 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 C Ri (°C/W) 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 27 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) 7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 13, 2014 IRGP4750DPbF/IRGP4750D-EPbF   L L VCC DUT 0 80 V + - DUT 1K VCC Rg Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit diode clamp / DUT L 4X DC VCC -5V DUT / DRIVER DUT VCC Rg RSH Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit C force R= VCC ICM 100K D1 22K C sense DUT VCC DUT G force 0.0075µF Rg E sense E force Fig.C.T.5 - Resistive Load Circuit 8 www.irf.com © 2014 International Rectifier Fig.C.T.6 - BVCES Filter Circuit Submit Datasheet Feedback November 13, 2014 IRGP4750DPbF/IRGP4750D-EPbF   600 90 500 75 tf tr 75 400 ICE (A) 200 30 10% VCE 0 45 200 30 100 15 10% ICE 300 90% ICE 10%ICE 15 10% VCE 0 0 0 Eoff Loss -100 Eon Loss -15 -0.3 -0.1 0.1 0.3 -100 0.5 -15 -0.3 0 0.3 0.6 time (µs) time(µs) Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 175°C using Fig. CT.4 Fig. WF2 - Typ. Turn-on Loss Waveform @ TJ = 175°C using Fig. CT.4 500 40 500 VCE QRR 30 0.9 tRR 20 400 400 300 300 200 200 Vce (V) IF (A) 10 0 -10 100 Peak IRR -30 -0.40 0.00 0.40 0.80 time (µS) Fig. WF3 - Typ. Diode Recovery Waveform @ TJ = 175°C using Fig. CT.4 9 100 ICE 0 -20 www.irf.com © 2014 International Rectifier Ice (A) 100 VCE (V) 45 90% ICE 60 TEST CURRENT 60 300 VCE (V) 400 ICE (A) 500 0 -100 -5.00 0.00 -100 10.00 5.00 Time (uS) Fig. WF4 - Typ. S.C. Waveform @ TJ = 150°C using Fig. CT.3 Submit Datasheet Feedback November 13, 2014 IRGP4750DPbF/IRGP4750D-EPbF   TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information Notes: This part marking information applies to devices produced after 02/26/2001 EXAMPLE: THIS IS AN IRFPE30 WITH ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2001 IN THE ASSEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INTERNATIONAL RECTIFIER LOGO PART NUMBER IRFPE30 56 135H 57 ASSEMBLY LOT CODE DATE CODE YEAR 1 = 2001 WEEK 35 LINE H TO-247AC package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 13, 2014 IRGP4750DPbF/IRGP4750D-EPbF   TO-247AD Package Outline Dimensions are shown in millimeters (inches) TO-247AD Part Marking Information E X A M P L E : T H IS IS A N IR G P 3 0 B 1 2 0 K D - E W IT H A S S E M B L Y LO T C O D E 5657 ASSEM B LED O N W W 35, 2000 IN T H E A S S E M B L Y L IN E "H " N o te : "P " in a s s e m b ly lin e p o s itio n in d ic a te s "L e a d - F re e " PART N U M BER IN T E R N A T IO N A L R E C T IF IE R LO G O 56 035H 57 ASSEM B LY LO T C O D E D A TE C O D E YE A R 0 = 2 0 0 0 W EEK 35 L IN E H TO-247AD package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 11 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 13, 2014 IRGP4750DPbF/IRGP4750D-EPbF   Qualification Information† Industrial Qualification Level TO-247AC Moisture Sensitivity Level N/A TO-247AD Yes RoHS Compliant † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ †† Applicable version of JEDEC standard at the time of product release. Revision History Date 11/13/2014 Comments Added IFM Diode Maximum Forward Current = 140A with the note  on page 1. Removed note from switching losses test condition on page 2. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 12 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 13, 2014