IRGP4760DPBF

IRGP4760DPbF IRGP4760D-EPbF   Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V     C IC = 60A, TC =100°C tSC 5.5µs, TJ(max) = 175°C G C VCE(ON) typ. = 1.7V @ IC = 48A G IRGP4760DPbF  TO‐247AC  E n-channel Applications • Industrial Motor Drive • UPS • Solar Inverters • Welding E G Gate C Collector Features C G IRGP4760D‐EPbF  TO‐247AD  E Emitter Benefits Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient High Efficiency in a Wide Range of Applications Lead-Free, RoHs compliant Environmentally friendly Base part number Package Type IRGP4760DPbF IRGP4760D-EPbF TO-247AC TO-247AD E Rugged Transient Performance Increased Reliability Excellent Current Sharing in Parallel Operation Standard Pack Form Quantity Tube 25 Tube 25 Orderable Part Number IRGP4760DPbF IRGP4760D-EPbF Absolute Maximum Ratings VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Parameter Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE = 15V Clamped Inductive Load Current, VGE = 20V  Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current  Continuous Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw Max. 650 90 60 144 192 74 45 192 ±20 325 160 -40 to +175 Units V A V W 300 (0.063 in. (1.6mm) from case) 10 lbf·in (1.1 N·m) C Thermal Resistance RJC (IGBT) RJC (Diode) RCS RJA 1 Parameter Thermal Resistance Junction-to-Case-(each IGBT)  Thermal Resistance Junction-to-Case-(each Diode)  Thermal Resistance, Case-to-Sink (flat, greased surface) Thermal Resistance, Junction-to-Ambient (typical socket mount) www.irf.com © 2014 International Rectifier Min. ––– ––– ––– ––– Submit Datasheet Feedback Typ. ––– ––– 0.24 ––– Max. 0.46 0.97 ––– 40 Units °C/W November 12, 2014 IRGP4760DPbF/IRGP4760D-EPbF   Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES V(BR)CES/TJ Parameter Collector-to-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Min. 650 — Typ. — 0.69 — 1.7 — 2.1 Gate Threshold Voltage 5.5 — VGE(th) Threshold Voltage Temperature Coeff. — -23 VGE(th)/TJ gfe Forward Transconductance — 31 — 1.0 ICES Collector-to-Emitter Leakage Current — 890 Gate-to-Emitter Leakage Current — — IGES — 1.9 Diode Forward Voltage Drop   VF   — 1.4 Switching Characteristics @ TJ = 25°C (unless otherwise specified) Max. — — 2.0 V IC = 48A, VGE = 15V, TJ = 25°C — IC = 48A, VGE = 15V, TJ = 175°C 7.4 V VCE = VGE, IC = 1.4mA — mV/°C VCE = VGE, IC = 1.4mA (25°C-150°C) — S VCE = 50V, IC = 48A, PW = 20µs 35 µA VGE = 0V, VCE = 650V — VGE = 0V, VCE = 650V, TJ = 175°C ±100 nA VGE = ±20V 2.5 V IF = 48A — IF = 48A, TJ = 175°C VCE(on) Collector-to-Emitter Saturation Voltage Qg Qge Qgc Eon Eoff Etotal td(on) tr td(off) tf Eon Parameter Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Eoff Etotal td(on) tr td(off) tf Cies Coes Cres Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance RBSOA Reverse Bias Safe Operating Area SCSOA   Short Circuit Safe Operating Area   5.5  —  —  Erec trr Irr Reverse Recovery Energy of the Diode Diode Reverse Recovery Time Peak Reverse Recovery Current — — — 370 170 25 — — — Min. — — — — — — — — — — — Typ. 96 30 40 1.7 1.0 2.7 70 60 140 30 2.9 — — — — — — — — — 1.4 4.3 55 60 145 65 2935 235 84 Units Conditions V VGE = 0V, IC = 100µA  V/°C VGE = 0V, IC = 3mA (25°C-175°C) Max Units Conditions 145 IC = 48A 45 nC VGE = 15V VCC = 400V 60 2.6 1.9 mJ   IC = 48A, VCC = 400V, VGE=15V 4.5 RG = 10, L = 210µH, TJ = 25°C 90 Energy losses include tail & diode 80 ns  reverse recovery  160 50 — — — — — — — — — — FULL SQUARE mJ  ns IC = 48A, VCC = 400V, VGE=15V RG = 10, L = 210µH, TJ = 175°C Energy losses include tail & diode reverse recovery   VGE = 0V pF VCC = 30V f = 1.0MHz TJ = 175°C, IC = 192A VCC = 520V, Vp ≤ 650V VGE = +20V to 0V TJ = 150°C,VCC = 400V, Vp ≤ 650V µs   V = +15V to 0V GE µJ ns A TJ = 175°C VCC = 400V, IF = 48A VGE = 15V, Rg = 10 Notes:       VCC = 80% (VCES), VGE = 20V. R is measured at TJ of approximately 90°C. Refer to AN-1086 for guidelines for measuring V(BR)CES safely. Maximum limits are based on statistical sample size characterization. Pulse width limited by max. junction temperature. Values influenced by parasitic L and C in measurement. 2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 12, 2014 IRGP4760DPbF/IRGP4760D-EPbF   100 For both: Duty cycle : 50% Tj = 175°C Tcase = 100°C Gate drive as specified Power Dissipation = 163W 90 Load Current ( A ) 80 70 60 Square Wave: VCC 50 40 I 30 Diode as specified 20 10 0.1 1 10 100 f , Frequency ( kHz ) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 350 300 80 250 IC (A) Ptot (W) 60 40 200 150 100 20 50 0 0 25 50 75 100 125 150 175 25 TC (°C) 50 75 100 125 150 175 TC (°C) Fig. 3 - Power Dissipation vs. Case Temperature Fig. 2 - Maximum DC Collector Current vs. Case Temperature 1000 1000 100 10 100 IC (A) IC (A) 10µsec 100µsec 10 1 1msec Tc = 25°C Tj = 175°C Single Pulse DC 1 0.1 1 10 100 1000 10000 VCE (V) Fig. 4 - Forward SOA TC = 25°C; TJ ≤ 175°C; VGE = 15V 3 www.irf.com © 2014 International Rectifier 10 100 1000 VCE (V) Fig. 5 - Reverse Bias SOA TJ = 175°C; VGE = 20V Submit Datasheet Feedback November 12, 2014 IRGP4760DPbF/IRGP4760D-EPbF   200 200 VGE = 18V VGE = 15V VGE = 15V VGE = 12V VGE = 12V 150 VGE = 10V VGE = 10V VGE = 8.0V VGE = 8.0V ICE (A) 150 ICE (A) VGE = 18V 100 100 50 50 0 0 0 2 4 6 8 0 10 2 4 6 8 10 V CE (V) V CE (V) Fig. 6 - Typ. IGBT Output Characteristics TJ = -40°C; tp = 20µs Fig. 7 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 20µs 200 200 VGE = 18V VGE = 15V VGE = 12V 150 150 VGE = 8.0V IF (A) ICE (A) VGE = 10V 100 100 50 -40°C 25°C 175°C 50 0 0 0 2 4 6 8 10 0 1 2 V CE (V) 12 12 10 10 ICE = 24A ICE = 48A 8 ICE = 24A ICE = 48A 8 ICE = 96A V CE (V) V CE (V) 4 Fig. 9 - Typ. Diode Forward Voltage Drop Characteristics Fig. 8 - Typ. IGBT Output Characteristics TJ = 175°C; tp = 20µs 6 ICE = 96A 6 4 4 2 2 0 0 5 10 15 20 V GE (V) Fig. 10 - Typical VCE vs. VGE TJ = -40°C 4 3 V F (V) www.irf.com © 2014 International Rectifier 5 10 15 20 V GE (V) Fig. 11 - Typical VCE vs. VGE TJ = 25°C Submit Datasheet Feedback November 12, 2014 IRGP4760DPbF/IRGP4760D-EPbF   12 200 10 ICE = 24A ICE = 48A ICE = 96A ICE (A) V CE (V) 8 TJ = 25°C TJ = 175°C 150 6 100 4 50 2 0 0 5 10 15 20 4 6 8 10 12 14 V GE (V) V GE (V) Fig. 12 - Typical VCE vs. VGE TJ = 175°C Fig. 13 - Typ. Transfer Characteristics VCE = 50V; tp = 20µs 10 1000 9 Energy (mJ) 7 Swiching Time (ns) 8 EON 6 5 4 3 2 tdOFF 100 tF tdON tR EOFF 1 0 10 0 10 20 30 40 50 60 70 80 90 100 110 0 10 20 30 40 50 60 70 80 90 100 IC (A) IC (A) Fig. 14 - Typ. Energy Loss vs. IC TJ = 175°C; L = 210µH; VCE = 400V, RG = 10; VGE = 15V Fig. 15 - Typ. Switching Time vs. IC TJ = 175°C; L = 210µH; VCE = 400V, RG = 10; VGE = 15V 8 10000 7 6 1000 Swiching Time (ns) EON Energy (mJ) 5 4 3 EOFF 2 tdOFF tdON tR 100 tF 10 1 0 1 0 20 40 60 80 100 120 0 20 40 60 80 100 RG () RG () Fig. 16 - Typ. Energy Loss vs. RG TJ = 175°C; L = 210µH; VCE = 400V, ICE = 48A; VGE = 15V Fig. 17 - Typ. Switching Time vs. RG TJ = 175°C; L = 210µH; VCE = 400V, ICE = 48A; VGE = 15V 5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 12, 2014 IRGP4760DPbF/IRGP4760D-EPbF   30 30 RG = 5 25 RG = 10 20 IRR (A) IRR (A) 25 RG = 47 15 RG = 100 10 20 15 10 5 5 20 30 40 50 60 70 80 90 100 0 20 40 60 80 100 IF (A) RG ( Fig. 18 - Typ. Diode IRR vs. IF TJ = 175°C Fig. 19 - Typ. Diode IRR vs. RG TJ = 175°C 30 3000 96A 10 2600 20 QRR (nC) IRR (A) 25 15 48A 22 2200 1800 100 10 1400 5 200 250 300 350 400 450 0 500 200 600 800 1000 diF /dt (A/µs) Fig. 20 - Typ. Diode IRR vs. diF/dt VCC = 400V; VGE = 15V; IF = 48A; TJ = 175°C Fig. 21 - Typ. Diode QRR vs. diF/dt VCC = 400V; VGE = 15V; TJ = 175°C 20 240 RG = 10 Tsc Isc 16 250 150 Time (µs) RG = 22 200 RG = 47 100 RG = 100 30 40 50 60 70 80 90 100 IF (A) Fig. 22 - Typ. Diode ERR vs. IF TJ = 175°C www.irf.com 12 160 8 120 4 80 0 50 20 200 © 2014 International Rectifier Current (A) Energy (µJ) 400 diF /dt (A/µs) 300 6 24A 47 40 8 10 12 14 16 18 VGE (V) Fig. 23 - VGE vs. Short Circuit Time VCC = 400V; TC = 150°C Submit Datasheet Feedback November 12, 2014 IRGP4760DPbF/IRGP4760D-EPbF   16 V GE, Gate-to-Emitter Voltage (V) 10000 Capacitance (pF) Cies 1000 Coes 100 Cres 14 V CES = 400V 12 V CES = 300V 10 8 6 4 2 0 10 0 100 200 300 400 500 0 600 20 40 60 80 100 Q G, Total Gate Charge (nC) V CE (V) Fig. 25 - Typical Gate Charge vs. VGE ICE = 48A Fig. 24 - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz 1 Thermal Response ( Z thJC ) D = 0.50 0.1 0.20 0.10 0.05 0.01 J 0.02 0.01 R1 R1 J 1 R2 R2 R3 R3 Ri (°C/W) C 2 1 3 2 3 Ci= iRi Ci= iRi 0.001 SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 1E-005 i (sec) C0.131857 0.000301 0.190293 0.003726 0.137850 0.021183 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 26 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) Thermal Response ( Z thJC ) 10 1 D = 0.50 0.20 0.1 0.10 0.05 0.02 J 0.01 0.01 R1 R1 J 1 R2 R2 R3 R3 R4 R4 C 2 1 2 3 4 3 4 Ci= iRi Ci= iRi 0.001 1E-005 0.0001 i (sec) 0.034171 0.000075 0.322392 0.000444 0.378848 0.005103 0.236223 0.032691 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 C Ri (°C/W) 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 27 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) 7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 12, 2014 IRGP4760DPbF/IRGP4760D-EPbF   L L VCC DUT 0 80 V + - DUT 1K VCC Rg Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit diode clamp / DUT L 4X DC VCC -5V DUT / DRIVER DUT VCC Rg RSH Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit C force R= VCC ICM 100K D1 22K C sense DUT VCC DUT G force 0.0075µF Rg E sense E force Fig.C.T.5 - Resistive Load Circuit 8 www.irf.com © 2014 International Rectifier Fig.C.T.6 - BVCES Filter Circuit Submit Datasheet Feedback November 12, 2014 IRGP4760DPbF/IRGP4760D-EPbF 600 500 100 500 400 80 400 60 300 300 ICE (A) 90% ICE 200 40 100 TEST CURRENT 40 200 90% ICE 100 20 100 20 10% ICE 10%ICE 0 Eoff Loss -100 0 -20 0.5 1 10% VCE 0 0 0 Eon Loss -100 4.25 4.75 Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 175°C using Fig. CT.4 Fig. WF2 - Typ. Turn-on Loss Waveform @ TJ = 175°C using Fig. CT.4 60 50 QRR tRR Vce (V) 20 IF (A) 600 600 500 500 VCE 400 30 10 300 200 200 ICE 100 Peak IRR -0.10 0.10 time (µs) Fig. WF3 - Typ. Diode Recovery Waveform @ TJ = 175°C using Fig. CT.4 9 www.irf.com 100 0 0 -20 -30 -0.30 400 300 0 -10 -20 5.25 time (µs) time(µs) 40 80 60 10% VCE -0.5 120 tr © 2014 International Rectifier Ice (A) VCE (V) tf VCE (V) 120 600 ICE (A)   -100 -100 2 4 6 8 10 time (µs) Fig. WF4 - Typ. S.C. Waveform @ TJ = 150°C using Fig. CT.3 Submit Datasheet Feedback November 12, 2014 IRGP4760DPbF/IRGP4760D-EPbF   TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information Notes: This part marking information applies to devices produced after 02/26/2001 EXAMPLE: THIS IS AN IRFPE30 WITH ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2001 IN THE ASSEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INTERNATIONAL RECTIFIER LOGO PART NUMBER IRFPE30 56 135H 57 ASSEMBLY LOT CODE DATE CODE YEAR 1 = 2001 WEEK 35 LINE H TO-247AC package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 12, 2014 IRGP4760DPbF/IRGP4760D-EPbF   TO-247AD Package Outline Dimensions are shown in millimeters (inches) TO-247AD Part Marking Information E X A M P L E : T H IS IS A N IR G P 3 0 B 1 2 0 K D - E W IT H A S S E M B L Y LO T C O D E 5657 ASSEM B LED O N W W 35, 2000 IN T H E A S S E M B L Y L IN E "H " N o te : "P " in a s s e m b ly lin e p o s itio n in d ic a te s "L e a d - F re e " PART N U M BER IN T E R N A T IO N A L R E C T IF IE R LO G O 56 035H 57 ASSEM B LY LO T C O D E D A TE C O D E YE A R 0 = 2 0 0 0 W EEK 35 L IN E H TO-247AD package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 11 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 12, 2014 IRGP4760DPbF/IRGP4760D-EPbF   Qualification Information† Industrial Qualification Level TO-247AC Moisture Sensitivity Level (per JEDEC JESD47F) †† N/A TO-247AD N/A Yes RoHS Compliant † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ †† Applicable version of JEDEC standard at the time of product release. Revision History Date Comments 8/21/2014 Updated IC vs. TC graph Fig.2 to match page1 spec data on page 3. 11/12/2014 Added IFM Diode Maximum Forward Current = 192A with the note  on page 1. Removed note from switching losses test condition on page 2. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 12 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 12, 2014