IRGP6630D-EPBF

IRGP6630DPbF IRGP6630D-EPbF   Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V     C C C IC = 30A, TC =100°C tSC 5µs, TJ(max) = 175°C G C G IRGP6630DPbF  TO‐247AC  E VCE(ON) typ. = 1.65V @ IC = 18A n-channel Applications  Welding  H Bridge Converters E G Gate C Collector Features E GC IRGP6630D‐EPbF  TO‐247AD  E Emitter Benefits Low VCE(ON) and Switching Losses High Efficiency in a Wide Range of Applications Optimized Diode for Full Bridge Hard Switch Converters Optimized for Welding and H Bridge Converters Improved Reliability due to Rugged Hard Switching Performance and High Power Capability Enables Short Circuit Protection Operation Excellent Current Sharing in Parallel Operation Environmentally friendly Square RBSOA and Maximum Temperature of 175°C 5µs Short Circuit Positive VCE (ON) Temperature Co-efficient Lead-free, RoHS compliant Base part number Package Type IRGP6630DPbF IRGP6630D-EPbF TO-247AC TO-247AD Standard Pack Form Quantity Tube 25 Tube 25 Orderable Part Number IRGP6630DPbF IRGP6630D-EPbF Absolute Maximum Ratings Parameter Max. Units V VCES IC @ TC = 25°C Collector-to-Emitter Voltage Continuous Collector Current 600 47 IC @ TC = 100°C ICM ILM IFRM @ TC = 100°C Continuous Collector Current Pulse Collector Current, VGE = 15V Clamped Inductive Load Current, VGE = 20V  Diode Repetitive Peak Forward Current 30 54 72 15 IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Diode Maximum Forward Current  Continuous Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw A 72 ±20 192 96 -40 to +175 V W °C   300 (0.063 in. (1.6mm) from case) 10 lbf·in (1.1 N·m)   Thermal Resistance RJC (IGBT) RJC (Diode) RCS RJA 1 Parameter Thermal Resistance Junction-to-Case-(each IGBT)  Thermal Resistance Junction-to-Case-(each Diode)  Thermal Resistance, Case-to-Sink (flat, greased surface) Thermal Resistance, Junction-to-Ambient (typical socket mount) www.irf.com © 2014 International Rectifier Min. ––– ––– ––– ––– Submit Datasheet Feedback Typ. ––– ––– 0.24 ––– Max. 0.78 5.9 ––– 40 Units °C/W November 14, 2014 IRGP6630DPbF/IRGP6630D-EPbF   Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES V(BR)CES/TJ Parameter Collector-to-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Min. 600 — Typ. — 0.94 — 1.65 — 2.05 — 2.10 Gate Threshold Voltage 4.0 — VGE(th) Threshold Voltage Temperature Coeff. — -20 VGE(th)/TJ gfe Forward Transconductance — 12 — 1.0 ICES Collector-to-Emitter Leakage Current — 410 — — IGES Gate-to-Emitter Leakage Current — 1.6 VF   Diode Forward Voltage Drop   — 1.3 Switching Characteristics @ TJ = 25°C (unless otherwise specified) Max. — — 1.95 IC = 18A, VGE = 15V, TJ = 25°C V — IC = 18A, VGE = 15V, TJ = 150°C — IC = 18A, VGE = 15V, TJ = 175°C 6.5 V VCE = VGE, IC = 500µA — mV/°C VCE = VGE, IC = 500µA (25°C-175°C) — S VCE = 50V, IC = 18A, PW = 20µs 25 VGE = 0V, VCE = 600V µA — VGE = 0V, VCE = 600V, TJ = 175°C ±100 nA VGE = ±20V 2.3 IF = 6A V — IF = 6A, TJ = 175°C VCE(on) Collector-to-Emitter Saturation Voltage Qg Qge Qgc Eon Eoff Etotal td(on) tr td(off) tf Eon Eoff Etotal td(on) tr td(off) tf Cies Coes Cres Parameter Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance RBSOA Reverse Bias Safe Operating Area SCSOA   Short Circuit Safe Operating Area   5  —  —  Erec trr Irr Reverse Recovery Energy of the Diode Diode Reverse Recovery Time Peak Reverse Recovery Current — — — 180 70 15 — — — Min. — — — — — — — — — — — — — — — — — — — — Typ. 30 10 15 75 350 425 40 25 95 20 230 570 800 30 25 100 80 1080 70 30 Units Conditions V VGE = 0V, IC = 100µA  V/°C VGE = 0V, IC = 1.2mA (25°C-175°C) Max — — — — — — — — — — — — — — — — — — — — FULL SQUARE Units nC Conditions IC = 18A VGE = 15V VCC = 400V µJ   IC = 18A, VCC = 400V, VGE=15V RG = 22, TJ = 25°C ns  µJ  ns Energy losses include tail & diode reverse recovery  IC = 18A, VCC = 400V, VGE=15V RG = 22, TJ = 175°C Energy losses include tail & diode reverse recovery   VGE = 0V VCC = 30V f = 1.0MHz TJ = 175°C, IC = 72A VCC = 480V, Vp ≤ 600V VGE = +20V to 0V TJ = 150°C,VCC = 400V, Vp ≤ 600V µs   V = +15V to 0V GE pF µJ ns A TJ = 175°C VCC = 400V, IF = 6A, VGE = 15V Rg = 22L = 0.68mH, L=150nH Notes:      VCC = 80% (VCES), VGE = 20V, Rg = 22L=620µH. R is measured at TJ of approximately 90°C. Refer to AN-1086 for guidelines for measuring V(BR)CES safely. Pulse width limited by max. junction temperature. Values influenced by parasitic L and C in measurement.  fsw =40KHz, refer to figure 26. 2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 14, 2014 IRGP6630DPbF/IRGP6630D-EPbF   60 For both: Duty cycle : 50% Tj = 175°C Tcase = 100°C Gate drive as specified Power Dissipation = 103W Load Current ( A ) 50 40 Square Wave: VCC 30 I 20 Diode as specified 10 0.1 1 10 100 f , Frequency ( kHz ) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 50 200 40 150 IC (A) Ptot (W) 30 20 100 50 10 0 0 25 50 75 100 125 150 175 25 50 TC (°C) 75 100 125 150 175 TC (°C) Fig. 3 - Power Dissipation vs. Case Temperature Fig. 2 - Maximum DC Collector Current vs. Case Temperature 100 100 10µsec IC (A) IC (A) 100µsec 10 1msec 10 DC 1 Tc = 25°C Tj = 175°C Single Pulse 1 0.1 1 10 100 1000 10 100 VCE (V) VCE (V) Fig. 4 - Forward SOA TC = 25°C; TJ ≤ 175°C; VGE = 15V 3 www.irf.com 1000 Fig. 5 - Reverse Bias SOA TJ = 175°C; VGE = 20V © 2014 International Rectifier Submit Datasheet Feedback November 14, 2014 IRGP6630DPbF/IRGP6630D-EPbF   72 72 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 60 48 ICE (A) ICE (A) 48 36 36 24 24 12 12 0 0 0 2 4 6 8 0 10 2 4 10 Fig. 6 - Typ. IGBT Output Characteristics TJ = -40°C; tp = 20µs Fig. 7 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 20µs 72 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V -40°C 25°C 175°C 60 48 IF (A) 48 36 36 24 24 12 12 0 0 0 2 4 6 8 10 0.0 0.5 1.0 1.5 V CE (V) 2.0 2.5 3.0 3.5 4.0 V F (V) Fig. 9 - Typ. Diode Forward Voltage Drop Characteristics Fig. 8 - Typ. IGBT Output Characteristics TJ = 175°C; tp = 20µs 8 8 ICE = 9.0A ICE = 18A 6 6 ICE = 36A VCE (V) VCE (V) 8 V CE (V) 60 4 2 ICE = 9.0A ICE = 18A ICE = 36A 4 2 0 0 5 10 15 20 5 10 V GE (V) Fig. 10 - Typical VCE vs. VGE TJ = -40°C 4 6 V CE (V) 72 ICE (A) VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 60 www.irf.com 15 20 V GE (V) Fig. 11 - Typical VCE vs. VGE TJ = 25°C © 2014 International Rectifier Submit Datasheet Feedback November 14, 2014 IRGP6630DPbF/IRGP6630D-EPbF   72 8 TJ = 25°C TJ = 175°C 60 ICE = 9.0A ICE = 18A 48 ICE = 36A ICE (A) VCE (V) 6 4 36 24 2 12 0 0 5 10 15 4 20 6 8 12 14 16 V GE (V) Fig. 12 - Typical VCE vs. VGE TJ = 175°C Fig. 13 - Typ. Transfer Characteristics VCE = 50V; tp = 20µs 1000 2000 Swiching Time (ns) 1600 Energy (J) 10 V GE (V) 1200 EOFF 800 400 tdOFF 100 tF tR tdON 10 EON 1 0 0 10 20 30 0 40 10 20 30 40 IC (A) IC (A) Fig. 14 - Typ. Energy Loss vs. IC TJ = 175°C; ; VCE = 400V, RG = 22; VGE = 15V Fig. 15 - Typ. Switching Time vs. IC TJ = 175°C; VCE = 400V, RG = 22; VGE = 15V 1000 1000 Swiching Time (ns) Energy (J) 800 EOFF 600 EON 400 tdOFF 100 tF tdON 200 tR 10 0 0 20 40 60 80 100 0 20 5 www.irf.com 60 80 100 RG () Rg () Fig. 16 - Typ. Energy Loss vs. RG TJ = 175°C; VCE = 400V, ICE = 18A; VGE = 15V 40 Fig. 17 - Typ. Switching Time vs. RG TJ = 175°C; VCE = 400V, ICE = 18A; VGE = 15V © 2014 International Rectifier Submit Datasheet Feedback November 14, 2014 IRGP6630DPbF/IRGP6630D-EPbF   25 25 RG = 10 20 20 15 IRR (A) IRR (A) RG = 22 RG = 47 10 RG = 100 5 0 2 4 6 8 10 12 0 40 60 80 RG ( Fig. 18 - Typ. Diode IRR vs. IF TJ = 175°C Fig. 19 - Typ. Diode IRR vs. RG TJ = 175°C 25 2000 20 1500 15 500 5 0 200 400 600 800 1000 100 10 22 47 6A 3A 0 1200 100 12A 1000 10 0 20 IF (A) QRR (nC) IRR (A) 10 5 0 200 400 600 800 1000 1200 1400 diF /dt (A/µs) diF /dt (A/µs) Fig. 20 - Typ. Diode IRR vs. diF/dt VCC = 400V; VGE = 15V; IF = 6A; TJ = 175°C Fig. 21 - Typ. Diode QRR vs. diF/dt VCC = 400V; VGE = 15V; TJ = 175°C 350 20 100 16 80 RG = 10 300 Time (µs) 200 150 Isc Tsc 12 60 8 40 4 20 Current (A) RG = 22 RG = 47 RG = 100 250 Energy (µJ) 15 100 50 0 0 2 4 6 8 10 12 0 9 10 11 6 www.irf.com 13 14 15 16 VGE (V) IF (A) Fig. 22 - Typ. Diode ERR vs. IF TJ = 175°C 12 Fig. 23 - VGE vs. Short Circuit Time VCC = 400V; TC = 150°C © 2014 International Rectifier Submit Datasheet Feedback November 14, 2014 IRGP6630DPbF/IRGP6630D-EPbF   10000 Cies 1000 Capacitance (pF) VGE, Gate-to-Emitter Voltage (V) 16 100 Coes 10 Cres 14 VCES = 400V VCES = 300V 12 10 1 8 6 4 2 0 0 100 200 300 400 500 600 0 5 10 VCE (V) 15 20 25 30 35 Q G, Total Gate Charge (nC) Fig. 25 - Typical Gate Charge vs. VGE ICE = 18A Fig. 24 - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz Repetitive Peak Current (A) 50 40 D=0.1 30 D=0.2 20 D=0.5 10 0 100 125 150 175 Case Temperature (°C) Fig 26. Maximum Diode Repetitive Forward Peak Current vs. Case Temperature 1 Thermal Response ( ZthJC ) D = 0.50 0.20 0.1 0.10 0.05 J 0.02 0.01 0.01 R1 R1 J 1 R2 R2 R3 R3 C 1 2 2 3 3 Ci= iRi Ci= iRi 1E-005 0.0001 i (sec) 0.21694 0.00021 0.29812 0.000939 0.26453 0.008391 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 C Ri (°C/W) 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 27 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) 7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 14, 2014 IRGP6630DPbF/IRGP6630D-EPbF   10 Thermal Response ( ZthJC ) D = 0.50 0.20 1 0.10 0.05 0.02 0.01 0.1 J R1 R1 J 1 R2 R2 R3 R3 R4 R4 C 2 1 2 3 4 3 4 Ci= iRi Ci= iRi 0.01 1E-005 0.0001 0.001 i (sec) 0.40747 0.000104 1.84187 0.000268 2.51697 0.002634 1.13369 0.026058 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 C Ri (°C/W) 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 28 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) 8 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 14, 2014 IRGP6630DPbF/IRGP6630D-EPbF   L L VCC DUT 0 80 V + - DUT 1K VCC Rg Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit diode clamp / DUT L 4X DC VCC -5V DUT / DRIVER DUT VCC Rg RSH Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit C force R= VCC ICM 100K D1 22K C sense DUT VCC DUT G force 0.0075µF Rg E sense E force Fig.C.T.5 - Resistive Load Circuit 9 www.irf.com Fig.C.T.6 - BVCES Filter Circuit © 2014 International Rectifier Submit Datasheet Feedback November 14, 2014 IRGP6630DPbF/IRGP6630D-EPbF   600 600 30 30 tr tf 500 25 500 400 20 400 300 15 300 200 10 TEST CURRENT 25 20 10% VCE 100 15 90% ICE 200 10 10%ICE 5 100 0 0 -0.2 0 0.2 0.4 0 Eon Loss Eoff Loss -100 5 10% VCE 10% ICE 0 ICE (A) VCE (V) ICE (A) VCE (V) 90% ICE -100 -5 0.6 -5 -0.4 0.8 0 0.4 0.8 1.2 time (µs) time(µs) Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 175°C using Fig. CT.4 Fig. WF2 - Typ. Turn-on Loss Waveform @ TJ = 175°C using Fig. CT.4 600 120 500 100 20 QRR 10 Vce (V) IF (A) ICE 300 0 -10 80 tRR 5 -5 VCE 400 Peak IRR 60 200 40 100 20 0 Ice (A) 15 0 -15 -20 -0.15 -0.05 -100 -10.00 0.05 0.15 0.25 0.35 -5.00 0.00 -20 5.00 Time (uS) time (µS) Fig. WF3 - Typ. Diode Recovery Waveform @ TJ = 175°C using Fig. CT.4 10 www.irf.com Fig. WF4 - Typ. S.C. Waveform @ TJ = 150°C using Fig. CT.3 © 2014 International Rectifier Submit Datasheet Feedback November 14, 2014 IRGP6630DPbF/IRGP6630D-EPbF   TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information Notes: This part marking information applies to devices produced after 02/26/2001 EXAMPLE: THIS IS AN IRFPE30 WITH ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2001 IN THE ASSEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INTERNATIONAL RECTIFIER LOGO PART NUMBER IRFPE30 56 135H 57 ASSEMBLY LOT CODE DATE CODE YEAR 1 = 2001 WEEK 35 LINE H TO-247AC package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 11 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 14, 2014 IRGP6630DPbF/IRGP6630D-EPbF   TO-247AD Package Outline Dimensions are shown in millimeters (inches) TO-247AD Part Marking Information E X A M P L E : T H IS IS A N IR G P 3 0 B 1 2 0 K D - E W IT H A S S E M B L Y LO T C O D E 5657 ASSEM B LED O N W W 35, 2000 IN T H E A S S E M B L Y L IN E "H " N o te : "P " in a s s e m b ly lin e p o s itio n in d ic a te s "L e a d - F re e " PART N U M BER IN T E R N A T IO N A L R E C T IF IE R LO G O 56 035H 57 ASSEM B LY LO T C O D E D A TE C O D E YE A R 0 = 2 0 0 0 W EEK 35 L IN E H TO-247AD package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 12 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 14, 2014 IRGP6630DPbF/IRGP6630D-EPbF   Qualification Information† Industrial Qualification Level Moisture Sensitivity Level TO-247AC N/A TO-247AD Yes RoHS Compliant † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ †† Applicable version of JEDEC standard at the time of product release. Revision History Date 11/14/2014 Comments Added IFM Diode Maximum Forward Current = 72A with the note  on page 1. Removed note from switching losses test condition on page 2. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 13 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 14, 2014