IRGP6640DPbF
IRGP6640D-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
VCES = 600V
C
C
C
IC = 40A, TC =100°C
tSC 5µs, TJ(max) = 175°C
G
C
G
IRGP6640DPbF
TO‐247AC
E
VCE(ON) typ. = 1.65V @ IC = 24A
n-channel
Applications
Welding
H Bridge Converters
E
G
Gate
C
Collector
Features
E
GC
IRGP6640D‐EPbF
TO‐247AD
E
Emitter
Benefits
Low VCE(ON) and Switching Losses
High Efficiency in a Wide Range of Applications
Optimized Diode for Full Bridge Hard Switch Converters
Optimized for Welding and H Bridge Converters
Improved Reliability due to Rugged Hard Switching
Performance and High Power Capability
Enables Short Circuit Protection Operation
Excellent Current Sharing in Parallel Operation
Environmentally friendly
Square RBSOA and Maximum Temperature of 175°C
5µs Short Circuit
Positive VCE (ON) Temperature Co-efficient
Lead-free, RoHS compliant
Base part number
Package Type
IRGP6640DPbF
IRGP6640D-EPbF
TO-247AC
TO-247AD
Standard Pack
Form
Quantity
Tube
25
Tube
25
Orderable Part Number
IRGP6640DPbF
IRGP6640D-EPbF
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IFRM @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, VGE = 15V
Clamped Inductive Load Current, VGE = 20V
Diode Repetitive Peak Forward Current
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
PD @ TC = 100°C
TJ
TSTG
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Max.
Units
600
53
40
72
96
20
96
±20
200
V
A
V
W
100
-40 to +175
°C
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal Resistance
RJC (IGBT)
RJC (Diode)
RCS
RJA
1
Parameter
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
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Min.
–––
–––
–––
–––
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Typ.
–––
–––
0.24
–––
Max.
0.75
3.35
–––
40
Units
°C/W
November 14, 2014
IRGP6640DPbF/IRGP6640D-EPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
V(BR)CES/TJ
Parameter
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Min.
600
—
Typ.
—
0.7
—
1.65
—
2.05
—
2.10
Gate Threshold Voltage
4.0
—
VGE(th)
Threshold Voltage Temperature Coeff.
—
-18
VGE(th)/TJ
gfe
Forward Transconductance
—
16
—
1.0
ICES
Collector-to-Emitter Leakage Current
—
380
—
—
IGES
Gate-to-Emitter Leakage Current
—
1.8
Diode Forward Voltage Drop
VF
—
1.3
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Max.
—
—
Units
Conditions
V
VGE = 0V, IC = 100µA
V/°C VGE = 0V, IC = 1.0mA (25°C-175°C)
1.95
IC = 24A, VGE = 15V, TJ = 25°C
V
—
IC = 24A, VGE = 15V, TJ = 150°C
—
IC = 24A, VGE = 15V, TJ = 175°C
6.5
V
VCE = VGE, IC = 700µA
—
mV/°C VCE = VGE, IC = 700µA (25°C-175°C)
—
S
VCE = 50V, IC = 24A, PW = 20µs
25
VGE = 0V, VCE = 600V
µA
—
VGE = 0V, VCE = 600V, TJ = 175°C
±100
nA VGE = ±20V
2.8
IF = 8A
V
—
IF = 8A, TJ = 175°C
VCE(on)
Collector-to-Emitter Saturation Voltage
Qg
Qge
Qgc
Eon
Eoff
Etotal
td(on)
tr
td(off)
tf
Eon
Eoff
Etotal
td(on)
tr
td(off)
tf
Cies
Coes
Cres
Parameter
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RBSOA
Reverse Bias Safe Operating Area
SCSOA
Short Circuit Safe Operating Area
5
—
—
µs
TJ = 150°C,VCC = 400V, Vp ≤ 600V
VGE = +15V to 0V
Erec
trr
Irr
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
—
—
—
120
70
21
—
—
—
µJ
ns
A
TJ = 175°C
VCC = 400V, IF = 8A, VGE = 15V
Rg = 10L=1.0mH, Ls=150nH
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
50
15
20
90
600
690
40
20
100
20
300
840
1140
30
20
100
90
1550
100
45
Max
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Units
nC
Conditions
IC = 24A
VGE = 15V
VCC = 400V
µJ IC = 24A, VCC = 400V, VGE=15V
RG = 10, TJ = 25°C
ns
µJ
ns
pF
FULL SQUARE
Energy losses include tail & diode
reverse recovery
IC = 24A, VCC = 400V, VGE=15V
RG = 10, TJ = 175°C
Energy losses include tail & diode
reverse recovery
VGE = 0V
VCC = 30V
f = 1.0MHz
TJ = 175°C, IC = 96A
VCC = 480V, Vp ≤ 600V
VGE = +20V to 0V
Notes:
VCC = 80% (VCES), VGE = 20V, Rg = 10L=1.0mH.
R is measured at TJ of approximately 90°C.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Pulse width limited by max. junction temperature.
Values influenced by parasitic L and C in measurement.
fsw =40KHz, refer to figure 26.
2
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IRGP6640DPbF/IRGP6640D-EPbF
60
For both:
Duty cycle : 50%
Tj = 175°C
Tcase = 100°C
Gate drive as specified
Power Dissipation = 100W
Load Current ( A )
50
40
Square Wave:
VCC
30
I
20
Diode as specified
10
0.1
1
10
100
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
250
60
50
200
Ptot (W)
IC (A)
40
30
150
100
20
50
10
0
0
25
50
75
100
125
150
25
175
50
75
100
125
150
175
TC (°C)
TC (°C)
Fig. 3 - Power Dissipation vs.
Case Temperature
Fig. 2 - Maximum DC Collector Current vs.
Case Temperature
1000
100
10µsec
100µsec
10
100
IC (A)
IC (A)
1msec
DC
10
1
Tc = 25°C
Tj = 175°C
Single Pulse
1
0.1
1
3
10
100
1000
10
100
1000
VCE (V)
VCE (V)
Fig. 4 - Forward SOA
TC = 25°C; TJ ≤ 175°C; VGE = 15V
Fig. 5 - Reverse Bias SOA
TJ = 175°C; VGE = 20V
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IRGP6640DPbF/IRGP6640D-EPbF
96
96
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
84
72
72
60
ICE (A)
ICE (A)
60
48
48
36
36
24
24
12
12
0
0
0
2
4
6
8
10
0
2
4
6
Fig. 6 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 20µs
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 20µs
96
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
72
84
-40°C
25°C
175°C
72
60
IF (A)
60
48
48
36
36
24
24
12
12
0
0
0
2
4
6
8
10
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
V CE (V)
V F (V)
Fig. 9 - Typ. Diode Forward Voltage Drop
Characteristics
Fig. 8 - Typ. IGBT Output Characteristics
TJ = 175°C; tp = 20µs
8
8
ICE = 12A
ICE = 24A
6
ICE = 12A
ICE = 24A
6
ICE = 48A
VCE (V)
VCE (V)
10
V CE (V)
84
4
ICE = 48A
4
2
2
0
0
5
10
15
20
V GE (V)
Fig. 10 - Typical VCE vs. VGE
TJ = -40°C
4
8
V CE (V)
96
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
84
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5
10
15
20
V GE (V)
Fig. 11 - Typical VCE vs. VGE
TJ = 25°C
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November 14, 2014
IRGP6640DPbF/IRGP6640D-EPbF
96
8
84
72
ICE = 48A
60
ICE (A)
VCE (V)
6
ICE = 12A
ICE = 24A
4
TJ = 25°C
TJ = 175°C
48
36
24
2
12
0
0
5
10
15
4
20
6
8
10
12
14
16
V GE (V)
V GE (V)
Fig. 12 - Typical VCE vs. VGE
TJ = 175°C
Fig. 13 - Typ. Transfer Characteristics
VCE = 50V; tp = 20µs
2400
1000
Swiching Time (ns)
2000
Energy (J)
1600
1200
EOFF
800
100
tF
tdOFF
tdON
tR
10
EON
400
0
1
0
10
20
30
40
50
0
10
20
IC (A)
30
40
50
IC (A)
Fig. 14 - Typ. Energy Loss vs. IC
TJ = 175°C; VCE = 400V, RG = 10; VGE = 15V
Fig. 15 - Typ. Switching Time vs. IC
TJ = 175°C; VCE = 400V, RG = 10; VGE = 15V
1600
1000
1400
Swiching Time (ns)
Energy (J)
1200
1000
800
EOFF
EON
600
tdOFF
tdON
100
tR
tF
400
10
200
0
5
20
40
60
80
100
0
20
40
60
80
100
Rg ()
RG ()
Fig. 16 - Typ. Energy Loss vs. RG
TJ = 175°C; VCE = 400V, ICE = 24A; VGE = 15V
Fig. 17 - Typ. Switching Time vs. RG
TJ = 175°C; VCE = 400V, ICE = 24A; VGE = 15V
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IRGP6640DPbF/IRGP6640D-EPbF
24
25
RG = 10
20
RG = 22
20
IRR (A)
IRR (A)
30
RG = 47
15
16
12
10
RG = 100
5
8
0
4
4
6
8
10
12
14
16
0
20
40
60
80
100
IF (A)
RG (
Fig. 18 - Typ. Diode IRR vs. IF
TJ = 175°C
Fig. 19 - Typ. Diode IRR vs. RG
TJ = 175°C
24
1200
20
1000
24A
QRR (nC)
IRR (A)
2
16
12
22
47
800
100
10
16A
600
8A
400
8
200
4
0
200
400
600
800
0
1000
200
400
600
800
1000
1200
diF /dt (A/µs)
diF /dt (A/µs)
Fig. 20 - Typ. Diode IRR vs. diF/dt
VCC = 400V; VGE = 15V; IF = 8A; TJ = 175°C
Fig. 21 - Typ. Diode QRR vs. diF/dt
VCC = 400V; VGE = 15V; TJ = 175°C
16
250
160
RG = 10
Time (µs)
Energy (µJ)
150
Isc
12
100
120
Tsc
8
80
4
40
Current (A)
RG = 22
RG = 47
RG = 100
200
50
0
0
2
4
6
8
10
12
14
16
IF (A)
Fig. 22 - Typ. Diode ERR vs. IF
TJ = 175°C
6
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0
9
10
11
12
13
14
15
16
VGE (V)
Fig. 23 - VGE vs. Short Circuit Time
VCC = 400V; TC = 150°C
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IRGP6640DPbF/IRGP6640D-EPbF
16
Cies
1000
Capacitance (pF)
VGE, Gate-to-Emitter Voltage (V)
10000
100
Coes
Cres
10
14
VCES = 400V
VCES = 300V
12
10
8
6
4
2
0
1
0
100
200
300
400
500
0
600
10
20
30
40
50
60
Q G, Total Gate Charge (nC)
VCE (V)
Fig. 25 - Typical Gate Charge vs. VGE
ICE = 24A
Fig. 24 - Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
70
Repetitive Peak Current (A)
60
50
D=0.1
40
D=0.2
30
20
D=0.5
10
0
100
125
150
175
Case Temperature (°C)
Fig 26. Maximum Diode Repetitive Forward Peak Current vs. Case Temperature
1
D = 0.50
Thermal Response ( ZthJC )
0.20
0.1
0.10
0.05
0.02
0.01
0.01
J
R1
R1
J
1
R2
R2
R3
R3
C
2
1
2
3
3
Ci= iRi
Ci= iRi
0.001
1E-005
0.0001
i (sec)
0.24105
0.000318
0.30929
0.002839
0.20039
0.017338
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
1E-006
C
Ri (°C/W)
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 27 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
7
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IRGP6640DPbF/IRGP6640D-EPbF
10
Thermal Response ( ZthJC )
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
J
0.01
R1
R1
J
1
R2
R2
R3
R3
R4
R4
C
1
2
2
3
3
4
C
4
Ci= iRi
Ci= iRi
0.01
1E-005
0.0001
i (sec)
0.11659
0.000047
1.13634
0.000298
1.43445
0.002865
0.66410
0.026578
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
Ri (°C/W)
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 28 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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IRGP6640DPbF/IRGP6640D-EPbF
L
L
VCC
DUT
0
80 V +
-
DUT
1K
VCC
Rg
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
diode clamp /
DUT
L
4X
DC
VCC
-5V
DUT /
DRIVER
DUT
VCC
Rg
RSH
Fig.C.T.3 - S.C. SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
C force
R=
VCC
ICM
100K
D1
22K
C sense
DUT
VCC
DUT
G force
0.0075µF
Rg
E sense
E force
Fig.C.T.5 - Resistive Load Circuit
9
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Fig.C.T.6 - BVCES Filter Circuit
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IRGP6640DPbF/IRGP6640D-EPbF
700
35
700
600
tf
500
400
30
600
25
500
20
400
tr
10% VCE
10% ICE
VCE (V)
10
200
ICE (A)
300
200
100
5
100
0
0
0
Eoff Loss
-100
-1.38 -1.36 -1.34 -1.32
-1.3
-5
-1.28
15
10
10%ICE
10% VCE
5
0
Eon Loss
-100
-5
-0.55 -0.5 -0.45 -0.4 -0.35 -0.3 -0.25
time(µs)
time (µs)
Fig. WF1 - Typ. Turn-off Loss Waveform
@ TJ = 175°C using Fig. CT.4
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4
20
500
QRR
15
250
VCE
tRR
10
5
400
200
300
150
200
100
0
Vce (V)
IF (A)
20
90% ICE
-5
-10
Peak
IRR
ICE
100
50
-15
0
-20
-25
-0.10
0.00
0.10
0.20
0.30
0.40
-100
-5.0
time (µS)
Fig. WF3 - Typ. Diode Recovery Waveform
@ TJ = 175°C using Fig. CT.4
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0
0.0
5.0
-50
10.0
Time (uS)
Fig. WF4 - Typ. S.C. Waveform
@ TJ = 150°C using Fig. CT.3
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November 14, 2014
Ice (A)
VCE (V)
15
30
25
90% ICE
300
35
TEST
CURRENT
ICE (A)
IRGP6640DPbF/IRGP6640D-EPbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
Notes: This part marking information applies to devices produced after 02/26/2001
EXAMPLE: THIS IS AN IRFPE30
WITH ASSEMBLY
LOT CODE 5657
ASSEMBLED ON WW 35, 2001
IN THE ASSEMBLY LINE "H"
Note: "P" in assembly line position
indicates "Lead-Free"
INTERNATIONAL
RECTIFIER
LOGO
PART NUMBER
IRFPE30
56
135H
57
ASSEMBLY
LOT CODE
DATE CODE
YEAR 1 = 2001
WEEK 35
LINE H
TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
11
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IRGP6640DPbF/IRGP6640D-EPbF
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
TO-247AD Part Marking Information
E X A M P L E : T H IS IS A N IR G P 3 0 B 1 2 0 K D - E
W IT H A S S E M B L Y
LO T C O D E 5657
ASSEM B LED O N W W 35, 2000
IN T H E A S S E M B L Y L IN E "H "
N o te : "P " in a s s e m b ly lin e p o s itio n
in d ic a te s "L e a d - F re e "
PART N U M BER
IN T E R N A T IO N A L
R E C T IF IE R
LO G O
56
035H
57
ASSEM B LY
LO T C O D E
D A TE C O D E
YE A R 0 = 2 0 0 0
W EEK 35
L IN E H
TO-247AD package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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IRGP6640DPbF/IRGP6640D-EPbF
Qualification Information†
Industrial
Qualification Level
(per JEDEC JESD47F)††
TO-247AC
Moisture Sensitivity Level
N/A
TO-247AD
Yes
RoHS Compliant
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
††
Applicable version of JEDEC standard at the time of product release.
Revision History
Date
11/14/2014
Comments
Added IFM Diode Maximum Forward Current = 96A with the note on page 1.
Removed note from switching losses test condition on page 2.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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November 14, 2014
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