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IRGP6650DPBF

IRGP6650DPBF

  • 厂商:

    EUPEC(英飞凌)

  • 封装:

    TO247

  • 描述:

    IGBT 600V 80A 306W Through Hole TO-247AC

  • 数据手册
  • 价格&库存
IRGP6650DPBF 数据手册
IRGP6650DPbF IRGP6650D-EPbF   Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V     C C C IC = 50A, TC =100°C tSC 5µs, TJ(max) = 175°C G C G IRGP6650DPbF  TO‐247AC  E VCE(ON) typ. = 1.65V @ IC = 35A n-channel Applications  Welding  H Bridge Converters E G Gate C Collector Features E GC IRGP6650D‐EPbF  TO‐247AD  E Emitter Benefits Low VCE(ON) and Switching Losses High Efficiency in a Wide Range of Applications Optimized Diode for Full Bridge Hard Switch Converters Optimized for Welding and H Bridge Converters Improved Reliability due to Rugged Hard Switching Performance and High Power Capability Enables Short Circuit Protection Operation Excellent Current Sharing in Parallel Operation Environmentally friendly Square RBSOA and Maximum Temperature of 175°C 5µs Short Circuit Positive VCE (ON) Temperature Co-efficient Lead-free, RoHS compliant Base part number Package Type IRGP6650DPbF IRGP6650D-EPbF TO-247AC TO-247AD Standard Pack Form Quantity Tube 25 Tube 25 Orderable Part Number IRGP6650DPbF IRGP6650D-EPbF Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE = 15V Clamped Inductive Load Current, VGE = 20V  IFRM @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Diode Repetitive Peak Forward Current Diode Maximum Forward Current  Continuous Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw Max. Units 600 80 50 105 140 V A 25 140 ±20 306 153 -40 to +175 V W °C   300 (0.063 in. (1.6mm) from case) 10 lbf·in (1.1 N·m)   Thermal Resistance RJC (IGBT) RJC (Diode) RCS RJA 1 Parameter Thermal Resistance Junction-to-Case-(each IGBT)  Thermal Resistance Junction-to-Case-(each Diode)  Thermal Resistance, Case-to-Sink (flat, greased surface) Thermal Resistance, Junction-to-Ambient (typical socket mount) www.irf.com © 2014 International Rectifier Min. ––– ––– ––– ––– Submit Datasheet Feedback Typ. ––– ––– 0.24 ––– Max. 0.49 3.35 ––– 40 Units °C/W November 14, 2014 IRGP6650DPbF/IRGP6650D-EPbF   Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES V(BR)CES/TJ Parameter Collector-to-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Min. 600 — Typ. — 0.45 — 1.65 — 2.05 — 2.10 Gate Threshold Voltage 4.0 — VGE(th) Threshold Voltage Temperature Coeff. — -18 VGE(th)/TJ gfe Forward Transconductance — 22 — 1.0 ICES Collector-to-Emitter Leakage Current — 600 — — IGES Gate-to-Emitter Leakage Current — 1.80 Diode Forward Voltage Drop   VF   — 1.30 Switching Characteristics @ TJ = 25°C (unless otherwise specified) Max. — — Units Conditions V VGE = 0V, IC = 100µA  V/°C VGE = 0V, IC = 1.0mA (25°C-175°C) 1.95 IC = 35A, VGE = 15V, TJ = 25°C V — IC = 35A, VGE = 15V, TJ = 150°C — IC = 35A, VGE = 15V, TJ = 175°C 6.5 V VCE = VGE, IC = 1.0mA — mV/°C VCE = VGE, IC = 1.0mA (25°C-175°C) — S VCE = 50V, IC = 35A, PW = 20µs 50 VGE = 0V, VCE = 600V µA — VGE = 0V, VCE = 600V, TJ = 175°C ±100 nA VGE = ±20V 2.80 IF = 8A V — IF = 8A, TJ = 175°C VCE(on) Collector-to-Emitter Saturation Voltage Qg Qge Qgc Eon Eoff Etotal td(on) tr td(off) tf Eon Eoff Etotal td(on) tr td(off) tf Cies Coes Cres Parameter Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance RBSOA Reverse Bias Safe Operating Area SCSOA   Short Circuit Safe Operating Area   5  —  —  TJ = 150°C,VCC = 400V, Vp ≤ 600V µs   V = +15V to 0V GE Erec trr Irr Reverse Recovery Energy of the Diode Diode Reverse Recovery Time Peak Reverse Recovery Current — — — 165 50 14 — — — µJ ns A Min. — — — — — — — — — — — — — — — — — — — — Typ. 75 20 30 300 630 930 40 30 105 20 640 930 1570 40 30 120 60 2220 130 65 Max — — — — — — — — — — — — — — — — — — — — Units nC Conditions IC = 35A VGE = 15V VCC = 400V µJ   IC = 35A, VCC = 400V, VGE=15V RG = 10, L=210µH, TJ = 25°C ns  µJ  ns pF FULL SQUARE Energy losses include tail & diode reverse recovery  IC = 35A, VCC = 400V, VGE=15V RG = 10, L=210µH, TJ = 175°C Energy losses include tail & diode reverse recovery   VGE = 0V VCC = 30V f = 1.0MHz TJ = 175°C, IC = 140A VCC = 480V, Vp ≤ 600V VGE = +20V to 0V TJ = 175°C VCC = 400V, IF = 8A, VGE = 15V Rg = 22L=1.0mH, Ls=150nH Notes:  VCC = 80% (VCES), VGE = 20V, Rg = 10L=210µH.      R is measured at TJ of approximately 90°C. Refer to AN-1086 for guidelines for measuring V(BR)CES safely. Pulse width limited by max. junction temperature. Values influenced by parasitic L and C in measurement. fsw =40KHz, refer to figure 26. 2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 14, 2014 IRGP6650DPbF/IRGP6650D-EPbF   90 For both: Duty cycle : 50% Tj = 175°C Tcase = 100°C Gate drive as specified Power Dissipation = 153W Load Current ( A ) 80 70 60 Square Wave: VCC 50 I 40 Diode as specified 30 20 0.1 1 10 100 f , Frequency ( kHz ) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 350 100 300 80 250 IC (A) Ptot (W) 60 40 200 150 100 20 50 0 0 25 50 75 100 125 150 25 175 50 75 100 125 150 175 TC (°C) TC (°C) Fig. 3 - Power Dissipation vs. Case Temperature Fig. 2 - Maximum DC Collector Current vs. Case Temperature 1000 1000 100 100 100µsec 10 DC IC (A) IC (A) 10µsec 1msec 10 1 Tc = 25°C Tj = 175°C Single Pulse 0.1 1 1 10 100 1000 10 100 VCE (V) VCE (V) Fig. 4 - Forward SOA TC = 25°C; TJ ≤ 175°C; VGE = 15V 3 www.irf.com © 2014 International Rectifier 1000 Fig. 5 - Reverse Bias SOA TJ = 175°C; VGE = 20V Submit Datasheet Feedback November 14, 2014 IRGP6650DPbF/IRGP6650D-EPbF   140 140 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 120 100 100 80 ICE (A) ICE (A) 80 60 60 40 40 20 20 0 0 0 2 4 6 8 0 10 2 4 10 Fig. 6 - Typ. IGBT Output Characteristics TJ = -40°C; tp = 20µs Fig. 7 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 20µs 140 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 100 -40°C 25°C 175°C 120 100 IF (A) 80 60 80 60 40 40 20 20 0 0 0 2 4 6 8 0.0 10 1.0 2.0 3.0 4.0 5.0 6.0 V F (V) V CE (V) Fig. 9 - Typ. Diode Forward Voltage Drop Characteristics Fig. 8 - Typ. IGBT Output Characteristics TJ = 175°C; tp = 20µs 8 8 ICE = 18A ICE = 35A 6 6 ICE = 70A VCE (V) VCE (V) 8 V CE (V) 120 4 2 ICE = 18A ICE = 35A ICE = 70A 4 2 0 0 5 10 15 20 5 10 V GE (V) Fig. 10 - Typical VCE vs. VGE TJ = -40°C 4 6 V CE (V) 140 ICE (A) VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 120 www.irf.com © 2014 International Rectifier 15 20 V GE (V) Fig. 11 - Typical VCE vs. VGE TJ = 25°C Submit Datasheet Feedback November 14, 2014 IRGP6650DPbF/IRGP6650D-EPbF   8 140 TJ = 25°C TJ = 175°C 120 ICE = 18A ICE = 35A 100 ICE = 70A 80 ICE (A) VCE (V) 6 4 60 40 2 20 0 0 5 10 15 20 2 4 6 8 14 16 Fig. 12 - Typical VCE vs. VGE TJ = 175°C Fig. 13 - Typ. Transfer Characteristics VCE = 50V; tp = 20µs 1000 Swiching Time (ns) 3000 Energy (J) 12 V GE (V) 4000 2000 1000 EOFF tdOFF 100 tF tdON tR 10 EON 0 1 0 10 20 30 40 50 60 70 0 10 20 30 IC (A) 40 50 60 70 IC (A) Fig. 14 - Typ. Energy Loss vs. IC TJ = 175°C; ; VCE = 400V, RG = 10; VGE = 15V Fig. 15 - Typ. Switching Time vs. IC TJ = 175°C; VCE = 400V, RG = 10; VGE = 15V 1000 3000 2500 tdOFF Swiching Time (ns) Energy (J) 10 V GE (V) 2000 1500 EOFF tdON 100 tF tR 1000 EON 10 500 0 5 20 40 60 80 100 0 20 40 60 80 100 Rg () RG () Fig. 16 - Typ. Energy Loss vs. RG TJ = 175°C; VCE = 400V, ICE = 35A; VGE = 15V Fig. 17 - Typ. Switching Time vs. RG TJ = 175°C; VCE = 400V, ICE = 35A; VGE = 15V www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 14, 2014 IRGP6650DPbF/IRGP6650D-EPbF   16 20 RG = 10 12 RG = 22 IRR (A) IRR (A) 15 10 RG = 47 8 4 5 RG = 100 0 0 2 4 6 8 10 12 14 0 16 20 40 60 80 IF (A) RG ( Fig. 18 - Typ. Diode IRR vs. IF TJ = 175°C Fig. 19 - Typ. Diode IRR vs. RG TJ = 175°C 100 16 1000 14 16A 800 10 QRR (nC) IRR (A) 12 8 6 22 47 600 100 10 8A 400 4A 4 0 200 400 600 800 200 0 diF /dt (A/µs) 200 400 600 800 1000 diF /dt (A/µs) Fig. 20 - Typ. Diode IRR vs. diF/dt VCC = 400V; VGE = 15V; IF = 8A; TJ = 175°C Fig. 21 - Typ. Diode QRR vs. diF/dt VCC = 400V; VGE = 15V; TJ = 175°C 250 20 250 RG = 10 RG = 22 RG = 47 RG = 100 Time (µs) 150 16 100 50 0 12 150 Tsc 8 100 4 50 0 2 4 6 8 10 12 14 16 0 9 10 11 Fig. 22 - Typ. Diode ERR vs. IF TJ = 175°C www.irf.com © 2014 International Rectifier 12 13 14 15 16 VGE (V) IF (A) 6 200 Isc Current (A) Energy (µJ) 200 Fig. 23 - VGE vs. Short Circuit Time VCC = 400V; TC = 150°C Submit Datasheet Feedback November 14, 2014 IRGP6650DPbF/IRGP6650D-EPbF   16 VGE, Gate-to-Emitter Voltage (V) 10000 Cies Capacitance (pF) 1000 100 Coes Cres 10 14 VCES = 400V VCES = 300V 12 10 8 6 4 2 0 1 0 100 200 300 400 500 0 600 20 40 60 80 Q G, Total Gate Charge (nC) VCE (V) Fig. 25 - Typical Gate Charge vs. VGE ICE = 35A Fig. 24 - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz 70 Repetitive Peak Current (A) 60 50 D=0.1 40 D=0.2 30 D=0.4 20 10 0 100 125 150 175 Case Temperature (°C) Fig 26. Maximum Diode Repetitive Forward Peak Current vs. Case Temperature 1 Thermal Response ( ZthJC ) D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 0.01 J R1 R1 J 1 R2 R2 R3 R3 R4 R4 C 2 1 2 3 3 4 C 4 Ci= iRi Ci= iRi 0.001 1E-005 0.0001 i (sec) 0.03980 0.000061 0.10562 0.000090 0.20665 0.002600 0.13624 0.015477 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 Ri (°C/W) 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 27 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) 7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 14, 2014 IRGP6650DPbF/IRGP6650D-EPbF   10 Thermal Response ( ZthJC ) D = 0.50 1 0.20 0.10 0.05 0.1 0.02 J 0.01 R1 R1 J 1 R2 R2 R3 R3 R4 R4 C 2 1 2 3 3 4 4 Ci= iRi Ci= iRi 0.01 1E-005 0.0001 0.001 i (sec) 0.11659 0.000047 1.13634 0.000298 1.43445 0.002865 0.66410 0.026578 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 C Ri (°C/W) 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 28 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) 8 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 14, 2014 IRGP6650DPbF/IRGP6650D-EPbF   L L VCC DUT 0 80 V + - DUT 1K VCC Rg Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit diode clamp / DUT L 4X DC VCC -5V DUT / DRIVER DUT VCC Rg RSH Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit C force R= VCC ICM 100K D1 22K C sense DUT VCC DUT G force 0.0075µF Rg E sense E force Fig.C.T.5 - Resistive Load Circuit 9 www.irf.com © 2014 International Rectifier Fig.C.T.6 - BVCES Filter Circuit Submit Datasheet Feedback November 14, 2014 IRGP6650DPbF/IRGP6650D-EPbF 600 600 60 tf tr 500 50 500 400 40 400 300 30 300 200 20 VCE (V) 10% VCE ICE (A) VCE (V) 90% ICE 100 0 0.2 0.4 30 90% ICE 200 20 10%ICE 10 0 0 Eon Loss Eoff Loss 0 50 10% VCE 0 -0.2 TEST CURRENT 40 100 10 10% ICE -100 60 -10 0.6 -100 -10 -0.2 0.8 0 0.2 0.4 0.6 0.8 time (µs) time(µs) Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 175°C using Fig. CT.4 Fig. WF2 - Typ. Turn-on Loss Waveform @ TJ = 175°C using Fig. CT.4 15 250 500 QRR 10 ICE (A)   VCE tRR 200 400 5 Vce (V) IF (A) 300 0 -5 -10 Peak IRR -15 -20 -0.20 200 100 100 50 0.00 0.20 0.40 0.60 Fig. WF3 - Typ. Diode Recovery Waveform @ TJ = 175°C using Fig. CT.4 www.irf.com 0 0 -100 -10.0 -7.5 -5.0 -2.5 0.0 time (µS) 10 150 ICE © 2014 International Rectifier 2.5 5.0 -50 Time (uS) Fig. WF4 - Typ. S.C. Waveform @ TJ = 150°C using Fig. CT.3 Submit Datasheet Feedback November 14, 2014 IRGP6650DPbF/IRGP6650D-EPbF   TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information Notes: This part marking information applies to devices produced after 02/26/2001 EXAMPLE: THIS IS AN IRFPE30 WITH ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2001 IN THE ASSEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INTERNATIONAL RECTIFIER LOGO PART NUMBER IRFPE30 56 135H 57 ASSEMBLY LOT CODE DATE CODE YEAR 1 = 2001 WEEK 35 LINE H TO-247AC package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 11 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 14, 2014 IRGP6650DPbF/IRGP6650D-EPbF   TO-247AD Package Outline Dimensions are shown in millimeters (inches) TO-247AD Part Marking Information E X A M P L E : T H IS IS A N IR G P 3 0 B 1 2 0 K D - E W IT H A S S E M B L Y LO T C O D E 5657 ASSEM B LED O N W W 35, 2000 IN T H E A S S E M B L Y L IN E "H " N o te : "P " in a s s e m b ly lin e p o s itio n in d ic a te s "L e a d - F re e " PART N U M BER IN T E R N A T IO N A L R E C T IF IE R LO G O 56 035H 57 ASSEM B LY LO T C O D E D A TE C O D E YE A R 0 = 2 0 0 0 W EEK 35 L IN E H TO-247AD package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 12 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 14, 2014 IRGP6650DPbF/IRGP6650D-EPbF   Qualification Information† Industrial Qualification Level (per JEDEC JESD47F)†† TO-247AC Moisture Sensitivity Level N/A TO-247AD Yes RoHS Compliant † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ †† Applicable version of JEDEC standard at the time of product release. Revision History Date 11/14/2014 Comments Added IFM Diode Maximum Forward Current = 140A with the note  on page 1. Removed note from switching losses test condition on page 2. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 13 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 14, 2014
IRGP6650DPBF 价格&库存

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