IRGP6650DPbF
IRGP6650D-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
VCES = 600V
C
C
C
IC = 50A, TC =100°C
tSC 5µs, TJ(max) = 175°C
G
C
G
IRGP6650DPbF
TO‐247AC
E
VCE(ON) typ. = 1.65V @ IC = 35A
n-channel
Applications
Welding
H Bridge Converters
E
G
Gate
C
Collector
Features
E
GC
IRGP6650D‐EPbF
TO‐247AD
E
Emitter
Benefits
Low VCE(ON) and Switching Losses
High Efficiency in a Wide Range of Applications
Optimized Diode for Full Bridge Hard Switch Converters
Optimized for Welding and H Bridge Converters
Improved Reliability due to Rugged Hard Switching
Performance and High Power Capability
Enables Short Circuit Protection Operation
Excellent Current Sharing in Parallel Operation
Environmentally friendly
Square RBSOA and Maximum Temperature of 175°C
5µs Short Circuit
Positive VCE (ON) Temperature Co-efficient
Lead-free, RoHS compliant
Base part number
Package Type
IRGP6650DPbF
IRGP6650D-EPbF
TO-247AC
TO-247AD
Standard Pack
Form
Quantity
Tube
25
Tube
25
Orderable Part Number
IRGP6650DPbF
IRGP6650D-EPbF
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, VGE = 15V
Clamped Inductive Load Current, VGE = 20V
IFRM @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Diode Repetitive Peak Forward Current
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Max.
Units
600
80
50
105
140
V
A
25
140
±20
306
153
-40 to +175
V
W
°C
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal Resistance
RJC (IGBT)
RJC (Diode)
RCS
RJA
1
Parameter
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
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Min.
–––
–––
–––
–––
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Typ.
–––
–––
0.24
–––
Max.
0.49
3.35
–––
40
Units
°C/W
November 14, 2014
IRGP6650DPbF/IRGP6650D-EPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
V(BR)CES/TJ
Parameter
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Min.
600
—
Typ.
—
0.45
—
1.65
—
2.05
—
2.10
Gate Threshold Voltage
4.0
—
VGE(th)
Threshold Voltage Temperature Coeff.
—
-18
VGE(th)/TJ
gfe
Forward Transconductance
—
22
—
1.0
ICES
Collector-to-Emitter Leakage Current
—
600
—
—
IGES
Gate-to-Emitter Leakage Current
—
1.80
Diode Forward Voltage Drop
VF
—
1.30
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Max.
—
—
Units
Conditions
V
VGE = 0V, IC = 100µA
V/°C VGE = 0V, IC = 1.0mA (25°C-175°C)
1.95
IC = 35A, VGE = 15V, TJ = 25°C
V
—
IC = 35A, VGE = 15V, TJ = 150°C
—
IC = 35A, VGE = 15V, TJ = 175°C
6.5
V
VCE = VGE, IC = 1.0mA
—
mV/°C VCE = VGE, IC = 1.0mA (25°C-175°C)
—
S
VCE = 50V, IC = 35A, PW = 20µs
50
VGE = 0V, VCE = 600V
µA
—
VGE = 0V, VCE = 600V, TJ = 175°C
±100
nA VGE = ±20V
2.80
IF = 8A
V
—
IF = 8A, TJ = 175°C
VCE(on)
Collector-to-Emitter Saturation Voltage
Qg
Qge
Qgc
Eon
Eoff
Etotal
td(on)
tr
td(off)
tf
Eon
Eoff
Etotal
td(on)
tr
td(off)
tf
Cies
Coes
Cres
Parameter
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RBSOA
Reverse Bias Safe Operating Area
SCSOA
Short Circuit Safe Operating Area
5
—
—
TJ = 150°C,VCC = 400V, Vp ≤ 600V
µs V = +15V to 0V
GE
Erec
trr
Irr
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
—
—
—
165
50
14
—
—
—
µJ
ns
A
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
75
20
30
300
630
930
40
30
105
20
640
930
1570
40
30
120
60
2220
130
65
Max
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Units
nC
Conditions
IC = 35A
VGE = 15V
VCC = 400V
µJ IC = 35A, VCC = 400V, VGE=15V
RG = 10, L=210µH, TJ = 25°C
ns
µJ
ns
pF
FULL SQUARE
Energy losses include tail & diode
reverse recovery
IC = 35A, VCC = 400V, VGE=15V
RG = 10, L=210µH, TJ = 175°C
Energy losses include tail & diode
reverse recovery
VGE = 0V
VCC = 30V
f = 1.0MHz
TJ = 175°C, IC = 140A
VCC = 480V, Vp ≤ 600V
VGE = +20V to 0V
TJ = 175°C
VCC = 400V, IF = 8A, VGE = 15V
Rg = 22L=1.0mH, Ls=150nH
Notes:
VCC = 80% (VCES), VGE = 20V, Rg = 10L=210µH.
R is measured at TJ of approximately 90°C.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Pulse width limited by max. junction temperature.
Values influenced by parasitic L and C in measurement.
fsw =40KHz, refer to figure 26.
2
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IRGP6650DPbF/IRGP6650D-EPbF
90
For both:
Duty cycle : 50%
Tj = 175°C
Tcase = 100°C
Gate drive as specified
Power Dissipation = 153W
Load Current ( A )
80
70
60
Square Wave:
VCC
50
I
40
Diode as specified
30
20
0.1
1
10
100
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
350
100
300
80
250
IC (A)
Ptot (W)
60
40
200
150
100
20
50
0
0
25
50
75
100
125
150
25
175
50
75
100
125
150
175
TC (°C)
TC (°C)
Fig. 3 - Power Dissipation vs.
Case Temperature
Fig. 2 - Maximum DC Collector Current vs.
Case Temperature
1000
1000
100
100
100µsec
10
DC
IC (A)
IC (A)
10µsec
1msec
10
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
1
10
100
1000
10
100
VCE (V)
VCE (V)
Fig. 4 - Forward SOA
TC = 25°C; TJ ≤ 175°C; VGE = 15V
3
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1000
Fig. 5 - Reverse Bias SOA
TJ = 175°C; VGE = 20V
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November 14, 2014
IRGP6650DPbF/IRGP6650D-EPbF
140
140
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
120
100
100
80
ICE (A)
ICE (A)
80
60
60
40
40
20
20
0
0
0
2
4
6
8
0
10
2
4
10
Fig. 6 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 20µs
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 20µs
140
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
100
-40°C
25°C
175°C
120
100
IF (A)
80
60
80
60
40
40
20
20
0
0
0
2
4
6
8
0.0
10
1.0
2.0
3.0
4.0
5.0
6.0
V F (V)
V CE (V)
Fig. 9 - Typ. Diode Forward Voltage Drop
Characteristics
Fig. 8 - Typ. IGBT Output Characteristics
TJ = 175°C; tp = 20µs
8
8
ICE = 18A
ICE = 35A
6
6
ICE = 70A
VCE (V)
VCE (V)
8
V CE (V)
120
4
2
ICE = 18A
ICE = 35A
ICE = 70A
4
2
0
0
5
10
15
20
5
10
V GE (V)
Fig. 10 - Typical VCE vs. VGE
TJ = -40°C
4
6
V CE (V)
140
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
120
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15
20
V GE (V)
Fig. 11 - Typical VCE vs. VGE
TJ = 25°C
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IRGP6650DPbF/IRGP6650D-EPbF
8
140
TJ = 25°C
TJ = 175°C
120
ICE = 18A
ICE = 35A
100
ICE = 70A
80
ICE (A)
VCE (V)
6
4
60
40
2
20
0
0
5
10
15
20
2
4
6
8
14
16
Fig. 12 - Typical VCE vs. VGE
TJ = 175°C
Fig. 13 - Typ. Transfer Characteristics
VCE = 50V; tp = 20µs
1000
Swiching Time (ns)
3000
Energy (J)
12
V GE (V)
4000
2000
1000
EOFF
tdOFF
100
tF
tdON
tR
10
EON
0
1
0
10
20
30
40
50
60
70
0
10
20
30
IC (A)
40
50
60
70
IC (A)
Fig. 14 - Typ. Energy Loss vs. IC
TJ = 175°C; ; VCE = 400V, RG = 10; VGE = 15V
Fig. 15 - Typ. Switching Time vs. IC
TJ = 175°C; VCE = 400V, RG = 10; VGE = 15V
1000
3000
2500
tdOFF
Swiching Time (ns)
Energy (J)
10
V GE (V)
2000
1500
EOFF
tdON
100
tF
tR
1000
EON
10
500
0
5
20
40
60
80
100
0
20
40
60
80
100
Rg ()
RG ()
Fig. 16 - Typ. Energy Loss vs. RG
TJ = 175°C; VCE = 400V, ICE = 35A; VGE = 15V
Fig. 17 - Typ. Switching Time vs. RG
TJ = 175°C; VCE = 400V, ICE = 35A; VGE = 15V
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IRGP6650DPbF/IRGP6650D-EPbF
16
20
RG = 10
12
RG = 22
IRR (A)
IRR (A)
15
10
RG = 47
8
4
5
RG = 100
0
0
2
4
6
8
10
12
14
0
16
20
40
60
80
IF (A)
RG (
Fig. 18 - Typ. Diode IRR vs. IF
TJ = 175°C
Fig. 19 - Typ. Diode IRR vs. RG
TJ = 175°C
100
16
1000
14
16A
800
10
QRR (nC)
IRR (A)
12
8
6
22
47
600
100
10
8A
400
4A
4
0
200
400
600
800
200
0
diF /dt (A/µs)
200
400
600
800
1000
diF /dt (A/µs)
Fig. 20 - Typ. Diode IRR vs. diF/dt
VCC = 400V; VGE = 15V; IF = 8A; TJ = 175°C
Fig. 21 - Typ. Diode QRR vs. diF/dt
VCC = 400V; VGE = 15V; TJ = 175°C
250
20
250
RG = 10
RG = 22
RG = 47
RG = 100
Time (µs)
150
16
100
50
0
12
150
Tsc
8
100
4
50
0
2
4
6
8
10
12
14
16
0
9
10
11
Fig. 22 - Typ. Diode ERR vs. IF
TJ = 175°C
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12
13
14
15
16
VGE (V)
IF (A)
6
200
Isc
Current (A)
Energy (µJ)
200
Fig. 23 - VGE vs. Short Circuit Time
VCC = 400V; TC = 150°C
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IRGP6650DPbF/IRGP6650D-EPbF
16
VGE, Gate-to-Emitter Voltage (V)
10000
Cies
Capacitance (pF)
1000
100
Coes
Cres
10
14
VCES = 400V
VCES = 300V
12
10
8
6
4
2
0
1
0
100
200
300
400
500
0
600
20
40
60
80
Q G, Total Gate Charge (nC)
VCE (V)
Fig. 25 - Typical Gate Charge vs. VGE
ICE = 35A
Fig. 24 - Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
70
Repetitive Peak Current (A)
60
50
D=0.1
40
D=0.2
30
D=0.4
20
10
0
100
125
150
175
Case Temperature (°C)
Fig 26. Maximum Diode Repetitive Forward Peak Current vs. Case Temperature
1
Thermal Response ( ZthJC )
D = 0.50
0.1
0.20
0.10
0.05
0.02
0.01
0.01
J
R1
R1
J
1
R2
R2
R3
R3
R4
R4
C
2
1
2
3
3
4
C
4
Ci= iRi
Ci= iRi
0.001
1E-005
0.0001
i (sec)
0.03980
0.000061
0.10562
0.000090
0.20665
0.002600
0.13624
0.015477
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
1E-006
Ri (°C/W)
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 27 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
7
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IRGP6650DPbF/IRGP6650D-EPbF
10
Thermal Response ( ZthJC )
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
J
0.01
R1
R1
J
1
R2
R2
R3
R3
R4
R4
C
2
1
2
3
3
4
4
Ci= iRi
Ci= iRi
0.01
1E-005
0.0001
0.001
i (sec)
0.11659
0.000047
1.13634
0.000298
1.43445
0.002865
0.66410
0.026578
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
C
Ri (°C/W)
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 28 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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IRGP6650DPbF/IRGP6650D-EPbF
L
L
VCC
DUT
0
80 V +
-
DUT
1K
VCC
Rg
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
diode clamp /
DUT
L
4X
DC
VCC
-5V
DUT /
DRIVER
DUT
VCC
Rg
RSH
Fig.C.T.3 - S.C. SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
C force
R=
VCC
ICM
100K
D1
22K
C sense
DUT
VCC
DUT
G force
0.0075µF
Rg
E sense
E force
Fig.C.T.5 - Resistive Load Circuit
9
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Fig.C.T.6 - BVCES Filter Circuit
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November 14, 2014
IRGP6650DPbF/IRGP6650D-EPbF
600
600
60
tf
tr
500
50
500
400
40
400
300
30
300
200
20
VCE (V)
10% VCE
ICE (A)
VCE (V)
90% ICE
100
0
0.2
0.4
30
90% ICE
200
20
10%ICE
10
0
0
Eon Loss
Eoff Loss
0
50
10% VCE
0
-0.2
TEST
CURRENT
40
100
10
10% ICE
-100
60
-10
0.6
-100
-10
-0.2
0.8
0
0.2
0.4
0.6
0.8
time (µs)
time(µs)
Fig. WF1 - Typ. Turn-off Loss Waveform
@ TJ = 175°C using Fig. CT.4
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4
15
250
500
QRR
10
ICE (A)
VCE
tRR
200
400
5
Vce (V)
IF (A)
300
0
-5
-10
Peak
IRR
-15
-20
-0.20
200
100
100
50
0.00
0.20
0.40
0.60
Fig. WF3 - Typ. Diode Recovery Waveform
@ TJ = 175°C using Fig. CT.4
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0
0
-100
-10.0 -7.5 -5.0 -2.5 0.0
time (µS)
10
150
ICE
© 2014 International Rectifier
2.5
5.0
-50
Time (uS)
Fig. WF4 - Typ. S.C. Waveform
@ TJ = 150°C using Fig. CT.3
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IRGP6650DPbF/IRGP6650D-EPbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
Notes: This part marking information applies to devices produced after 02/26/2001
EXAMPLE: THIS IS AN IRFPE30
WITH ASSEMBLY
LOT CODE 5657
ASSEMBLED ON WW 35, 2001
IN THE ASSEMBLY LINE "H"
Note: "P" in assembly line position
indicates "Lead-Free"
INTERNATIONAL
RECTIFIER
LOGO
PART NUMBER
IRFPE30
56
135H
57
ASSEMBLY
LOT CODE
DATE CODE
YEAR 1 = 2001
WEEK 35
LINE H
TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
11
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IRGP6650DPbF/IRGP6650D-EPbF
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
TO-247AD Part Marking Information
E X A M P L E : T H IS IS A N IR G P 3 0 B 1 2 0 K D - E
W IT H A S S E M B L Y
LO T C O D E 5657
ASSEM B LED O N W W 35, 2000
IN T H E A S S E M B L Y L IN E "H "
N o te : "P " in a s s e m b ly lin e p o s itio n
in d ic a te s "L e a d - F re e "
PART N U M BER
IN T E R N A T IO N A L
R E C T IF IE R
LO G O
56
035H
57
ASSEM B LY
LO T C O D E
D A TE C O D E
YE A R 0 = 2 0 0 0
W EEK 35
L IN E H
TO-247AD package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
12
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November 14, 2014
IRGP6650DPbF/IRGP6650D-EPbF
Qualification Information†
Industrial
Qualification Level
(per JEDEC JESD47F)††
TO-247AC
Moisture Sensitivity Level
N/A
TO-247AD
Yes
RoHS Compliant
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
††
Applicable version of JEDEC standard at the time of product release.
Revision History
Date
11/14/2014
Comments
Added IFM Diode Maximum Forward Current = 140A with the note on page 1.
Removed note from switching losses test condition on page 2.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
13
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