IRGP6690DPbF
IRGP6690D-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
VCES = 600V
C
C
C
IC = 90A, TC =100°C
tSC ≥ 5µs, TJ(max) = 175°C
G
G
VCE(ON) typ. = 1.65V @ IC = 75A
E
n-channel
Applications
• Welding
• H Bridge Converters
C
E
G
C
Collector
Features
E
Emitter
Benefits
Low VCE(ON) and switching losses
High efficiency in a wide range of applications
Optimized diode for full bridge hard switch converters
Optimized for welding and H bridge converters
Improved reliability due to rugged hard switching
performance and higher power capability
Square RBSOA and maximum junction temperature 175°C
5µs short circuit SOA
Enables short circuit protection scheme
Positive VCE (ON) temperature coefficient
Excellent current sharing in parallel operation
Lead-free, RoHS compliant
Environmentally friendly
Base part number
Package Type
IRGP6690DPBF
IRGP6690D-EPBF
TO-247AC
TO-247AD
E
IRGP6690D-EPbF
TO-247AD
IRGP6690DPbF
TO-247AC
G
Gate
C
Standard Pack
Form
Quantity
Tube
25
Tube
25
Orderable Part Number
IRGP6690DPBF
IRGP6690D-EPBF
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IFRM @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, VGE = 15V
Clamped Inductive Load Current, VGE = 20V
Diode Repetitive Peak Forward Current
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Max.
600
140
90
225
300
45
300
±20
483
241
-40 to +175
Units
V
A
V
W
C
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal Resistance
RθJC (IGBT)
RθJC (Diode)
RθCS
RθJA
1
Parameter
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
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Min.
–––
–––
–––
–––
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Typ.
–––
–––
0.24
–––
Max.
0.31
2.10
–––
40
Units
°C/W
November 14, 2014
IRGP6690DPbF/IRGP6690D-EPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
ΔV(BR)CES/ΔTJ
Parameter
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Min.
600
—
Typ.
—
0.55
—
1.65
—
2.05
—
2.10
VGE(th)
Gate Threshold Voltage
4.0
—
Threshold Voltage Temperature Coeff.
—
-19
ΔVGE(th)/ΔTJ
gfe
Forward Transconductance
—
50
—
1.5
ICES
Collector-to-Emitter Leakage Current
—
1.4
Gate-to-Emitter Leakage Current
—
—
IGES
—
2.3
Diode Forward Voltage Drop
VFM
—
1.5
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Max.
—
—
Units
Conditions
V
VGE = 0V, IC = 100µA
V/°C VGE = 0V, IC = 3mA (25°C-175°C)
1.95
IC = 75A, VGE = 15V, TJ = 25°C
V
—
IC = 75A, VGE = 15V, TJ = 150°C
—
IC = 75A, VGE = 15V, TJ = 175°C
6.5
V
VCE = VGE, IC = 2.1mA
—
mV/°C VCE = VGE, IC = 2.1mA (25°C-175°C)
—
S
VCE = 50V, IC = 75A, PW = 20µs
100
µA VGE = 0V, VCE = 600V
—
mA VGE = 0V, VCE = 600V, TJ = 175°C
±200
nA VGE = ±20V
3.3
V
IF = 18A
—
IF = 18A, TJ = 175°C
VCE(on)
Collector-to-Emitter Saturation Voltage
Qg
Qge
Qgc
Eon
Eoff
Etotal
td(on)
tr
td(off)
tf
Eon
Parameter
Total Gate Charge
Gate-to-Emitter Charge
Gate-to-Collector Charge
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Eoff
Etotal
td(on)
tr
td(off)
tf
Cies
Coes
Cres
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RBSOA
Reverse Bias Safe Operating Area
SCSOA
Short Circuit Safe Operating Area
5
—
—
µs
Erec
trr
Irr
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
—
—
—
210
90
26
—
—
—
µJ
ns
A
Min.
—
—
—
—
—
—
—
—
—
—
—
Typ.
140
40
60
2.4
2.2
4.6
85
86
222
53
3.1
Max
—
—
—
—
—
—
—
—
—
—
—
Units
—
—
—
—
—
—
—
—
—
2.8
5.9
67
92
227
78
4720
270
140
—
—
—
—
—
—
—
—
—
mJ
nC
mJ
ns
ns
pF
FULL SQUARE
Conditions
IC = 75A
VGE = 15V
VCC = 400V
IC = 75A, VCC = 400V, VGE=15V
RG = 10Ω, L = 400µH, TJ = 25°C
Energy losses include tail & diode
reverse recovery
IC = 75A, VCC = 400V, VGE=15V
RG = 10Ω, L = 400µH, TJ = 175°C
Energy losses include tail & diode
reverse recovery
VGE = 0V
VCC = 30V
f = 1.0MHz
TJ = 175°C, IC = 300A
VCC = 480V, Vp ≤ 600V
VGE = +20V to 0V
TJ = 150°C,VCC = 400V, Vp ≤ 600V
VGE = +15V to 0V
TJ = 175°C
VCC = 400V, IF = 18A
VGE = 15V, Rg = 10Ω
Notes:
VCC = 80% (VCES), VGE = 20V, L = 400µH, RG = 10Ω.
Rθ is measured at TJ of approximately 90°C.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Pulse width limited by max. junction temperature.
Values influenced by parasitic L and C in measurement.
fsw =40KHz, refer to figure 26.
2
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IRGP6690DPbF/IRGP6690D-EPbF
140
For both:
Duty cycle : 50%
Tj = 175°C
Tcase = 100°C
Gate drive as specified
Power Dissipation = 241W
Load Current ( A )
120
100
80
Square Wave:
VCC
60
I
40
Diode as specified
20
0.1
1
10
100
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
500
140
120
400
80
300
Ptot (W)
IC (A)
100
60
200
40
100
20
0
0
25
50
75
100
125
150
175
25
TC (°C)
50
75
100
125
150
175
TC (°C)
Fig. 3 - Power Dissipation vs.
Case Temperature
Fig. 2 - Maximum DC Collector Current vs.
Case Temperature
1000
10µsec
100
100µsec
10
100
IC (A)
IC (A)
1msec
DC
10
1
Tc = 25°C
Tj = 175°C
Single Pulse
1
0.1
1
10
100
VCE (V)
Fig. 4 - Forward SOA
TC = 25°C; TJ ≤ 175°C; VGE = 15V
3
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10
100
1000
V CE (V)
Fig. 5 - Reverse Bias SOA
TJ = 175°C; VGE = 20V
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November 14, 2014
IRGP6690DPbF/IRGP6690D-EPbF
300
300
250
250
V GE = 18V
V GE = 15V
V GE = 12V
V GE = 10V
V GE = 8.0V
150
150
100
100
50
50
0
0
0
2
4
6
8
10
0
2
4
10
Fig. 6 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 20µs
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 20µs
300
V GE = 18V
V GE = 15V
V GE = 12V
V GE = 10V
V GE = 8.0V
175°C
25°C
-40°C
250
200
IF (A)
200
150
150
100
100
50
50
0
0
0
2
4
6
8
10
0.0
1.0
2.0
V CE (V)
7
6
6
V CE (V)
ICE = 37A
ICE = 75A
4
4.0
5.0
6.0
7.0
Fig. 9 - Typ. Diode Forward Voltage Drop
Characteristics
7
5
3.0
VF (V)
Fig. 8 - Typ. IGBT Output Characteristics
TJ = 175°C; tp = 20µs
V CE (V)
8
V CE (V)
250
ICE = 150A
3
5
ICE = 37A
ICE = 75A
4
ICE = 150A
3
2
2
1
1
0
0
5
10
15
20
V GE (V)
Fig. 10 - Typical VCE vs. VGE
TJ = -40°C
4
6
V CE (V)
300
ICE (A)
V GE = 18V
V GE = 15V
V GE = 12V
V GE = 10V
V GE = 8.0V
200
ICE (A)
ICE (A)
200
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5
10
15
20
V GE (V)
Fig. 11 - Typical VCE vs. VGE
TJ = 25°C
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November 14, 2014
IRGP6690DPbF/IRGP6690D-EPbF
7
300
6
250
ICE = 150A
200
4
ICE (A)
V CE (V)
5
ICE = 37A
ICE = 75A
3
TJ = 25°C
TJ = 175°C
150
100
2
50
1
0
0
5
10
15
20
2
4
8
10
12
14
16
V GE (V)
Fig. 12 - Typical VCE vs. VGE
TJ = 175°C
Fig. 13 - Typ. Transfer Characteristics
VCE = 50V; tp = 20µs
1000
14
12
Swiching Time (ns)
tdOFF
10
Energy (mJ)
6
V GE (V)
EON
8
6
4
EOFF
tF
100
tdON
tR
2
10
0
0
20
40
60
80
0
100 120 140 160
20
40
60
80
100 120 140 160
IC (A)
IC (A)
Fig. 14 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 400µH; VCE = 400V, RG = 10Ω; VGE = 15V
Fig. 15 - Typ. Switching Time vs. IC
TJ = 175°C; L = 400µH; VCE = 400V, RG = 10Ω; VGE = 15V
10000
12
10
Swiching Time (ns)
EON
Energy (mJ)
8
6
EOFF
4
tdOFF
1000
tR
2
100
0
0
20
40
60
80
100
tF
tdON
0
10
20
30
40
50
Rg (Ω )
RG ( Ω )
Fig. 16 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 400µH; VCE = 400V, ICE = 75A; VGE = 15V
Fig. 17 - Typ. Switching Time vs. RG
TJ = 175°C; L = 400µH; VCE = 400V, ICE = 75A; VGE = 15V
5
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IRGP6690DPbF/IRGP6690D-EPbF
30
30
RG = 10Ω
25
25
IRR (A)
IRR (A)
RG = 22Ω
20
RG = 47Ω
15
RG = 100Ω
10
20
15
10
5
5
5
10
15
20
25
30
35
0
40
20
40
60
80
100
IF (A)
RG ( Ω)
Fig. 18 - Typ. Diode IRR vs. IF
TJ = 175°C
Fig. 19 - Typ. Diode IRR vs. RG
TJ = 175°C
1800
30
36A
1600
25
QRR (nC)
IRR (A)
20
15
10Ω
22Ω
1400
47Ω
1200
18A
1000
100Ω
10
800
5
600
0
200
400
600
800
9.0A
0
1000
200
400
600
800
1000
1200
diF /dt (A/µs)
diF /dt (A/µs)
Fig. 20 - Typ. Diode IRR vs. diF/dt
VCC = 400V; VGE = 15V; IF = 18A; TJ = 175°C
Fig. 21 - Typ. Diode QRR vs. diF/dt
VCC = 400V; VGE = 15V; TJ = 175°C
600
30
300
RG = 10Ω
250
25
RG = 22Ω
Isc
Tsc
500
Time (µs)
150
RG = 47Ω
20
400
15
300
10
200
Current (A)
Energy (µJ)
200
100
RG = 100Ω
50
0
5
5
10
15
20
25
30
35
40
IF (A)
Fig. 22 - Typ. Diode ERR vs. IF
TJ = 175°C
6
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100
9
10
11
12
13
14
15
16
V GE (V)
Fig. 23 - VGE vs. Short Circuit Time
VCC = 400V; TC = 25°C
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IRGP6690DPbF/IRGP6690D-EPbF
16
V GE, Gate-to-Emitter Voltage (V)
10000
Capacitance (pF)
Cies
1000
Coes
100
Cres
V CES = 400V
14
V CES = 300V
12
10
8
6
4
2
0
10
0
100
200
300
400
0
500
20
40
60
80
100
120
140
Q G, Total Gate Charge (nC)
V CE (V)
Fig. 25 - Typical Gate Charge vs. VGE
ICE = 75A
Fig. 24 - Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
120
D=0.1
Repetitive Peak Current (A)
100
80
D=0.2
60
40
D=0.3
20
0
100
125
150
175
Case Temperature (°C)
Fig. 26 - Typical Gate Charge vs. VGE
Thermal Response ( Z thJC )
1
D = 0.50
0.1
0.20
0.10
0.05
0.01
τJ
0.02
0.01
R1
R1
τJ
τ1
R2
R2
R3
R3
R4
R4
τC
τ2
τ1
τ2
τ3
τ3
τ4
τ4
Ci= τi/Ri
Ci= τi/Ri
0.001
1E-005
τi (sec)
0.0059807
0.00001295
0.0714021
0.00014130
0.1411822
0.00407600
0.0913779
0.02072000
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
1E-006
τC
Ri (°C/W)
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 27 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
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IRGP6690DPbF/IRGP6690D-EPbF
Thermal Response ( Z thJC )
10
D = 0.50
1
0.20
0.10
τJ
0.05
0.1
0.02
0.01
R1
R1
τJ
τ1
R2
R2
R3
R3
R4
R4
τC
τ2
τ1
τ2
τ3
τ3
τ4
τ4
Ci= τi/Ri
Ci= τi/Ri
τC
Ri (°C/W)
τi (sec)
0.156286
0.000117
0.556864
0.000252
0.866402
0.003387
0.521965
0.030298
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 28 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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IRGP6690DPbF/IRGP6690D-EPbF
L
L
VCC
DUT
0
80 V +
-
DUT
1K
VCC
Rg
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
diode clamp /
DUT
L
4X
DC
VCC
-5V
DUT /
DRIVER
DUT
VCC
Rg
RSH
Fig.C.T.3 - S.C. SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
C force
R=
VCC
ICM
100K
D1
22K
C sense
DUT
VCC
G force
DUT
0.0075µF
Rg
E sense
E force
Fig.C.T.5 - Resistive Load Circuit
9
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Fig.C.T.6 - BVCES Filter Circuit
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November 14, 2014
IRGP6690DPbF/IRGP6690D-EPbF
600
120
600
120
tr
tf
400
80
400
90% ICE
300
60
40
200
10% VCE
10% ICE
100
)
A
(
E
IC
80
60
90% ICE
200
40
10%ICE
10% VCE
100
0
-0.6
-0.5
-0.4
-0.3
0
Eon Loss
-20
-0.2
-100
-20
-0.6
-0.5
-0.4
-0.3
-0.2
time(µs)
time (µs)
Fig. WF1 - Typ. Turn-off Loss Waveform
@ TJ = 175°C using Fig. CT.4
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4
20
600
600
500
500
QRR
15
10
tRR
5
VCE
400
0
400
300
300
-5
-10
Vce (V)
IF (A)
20
0
Eoff Loss
-100
100
300
20
0
TEST
CURRENT
ICE (A)
500
Peak
IRR
-15
ICE
200
200
Ice (A)
E
C
V
100
VCE (V)
)
(V
500
100
100
-20
-30
-0.2
-0.1
0.0
0.1
time (µs)
Fig. WF3 - Typ. Diode Recovery Waveform
@ TJ = 175°C using Fig. CT.4
10
0
0
-25
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-100
15.0
-100
-5.0
0.0
5.0
10.0
time (µs)
Fig. WF4 - Typ. S.C. Waveform
@ TJ = 150°C using Fig. CT.3
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November 14, 2014
IRGP6690DPbF/IRGP6690D-EPbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
EXAMPLE: THIS IS AN IRFPE30
WITH ASSEMBLY
LOT CODE 5657
ASSEMBLED ON WW 35, 2001
IN THE ASSEMBLY LINE "H"
Note: "P" in assembly line position
indicates "Lead-Free"
INTERNATIONAL
RECTIFIER
LOGO
PART NUMBER
IRFPE30
56
135H
57
ASSEMBLY
LOT CODE
DATE CODE
YEAR 1 = 2001
WEEK 35
LINE H
TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
11
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November 14, 2014
IRGP6690DPbF/IRGP6690D-EPbF
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
TO-247AD Part Marking Information
E X A M P L E : T H IS IS A N IR G P 3 0 B 1 2 0 K D - E
W IT H A S S E M B L Y
LO T C O D E 5657
ASSEM B LED O N W W 35, 2000
IN T H E A S S E M B L Y L IN E "H "
N o te : "P " in a s s e m b ly lin e p o s itio n
in d ic a te s "L e a d - F re e "
PART N U M BER
IN T E R N A T IO N A L
R E C T IF IE R
LO G O
56
035H
57
ASSEM B LY
LO T C O D E
D A TE C O D E
YE A R 0 = 2 0 0 0
W EEK 35
L IN E H
TO-247AD package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
12
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November 14, 2014
IRGP6690DPbF/IRGP6690D-EPbF
Qualification Information†
Industrial
Qualification Level
(per JEDEC JESD47F) ††
Moisture Sensitivity Level
TO-247AC
N/A
TO-247AD
N/A
Yes
RoHS Compliant
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
††
Applicable version of JEDEC standard at the time of product release.
Revision History
Date
11/14/2014
Comments
• Added IFM Diode Maximum Forward Current = 300A with the note on page 1.
• Removed note from switching losses test condition on page 2.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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November 14, 2014