IRGPC40FD2

PD - 9.1113 IRGPC40FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve VCE(sat) ≤ 2.0V G @VGE = 15V, IC = 27A E n-channel Description Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, motor control, UPS and power supply applications. TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. Max. Units 600 49 27 200 200 15 200 ± 20 160 65 -55 to +150 V A V W °C 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1 N•m) Thermal Resistance Parameter RθJC RθJC RθCS RθJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight C-117 Min. Typ. Max. — — — — — — — 0.24 — 6 (0.21) 0.77 1.7 — 40 — Units °C/W g (oz) Revision 1 IRGPC40FD2 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) VCE(on) Parameter Collector-to-Emitter Breakdown Voltage Temp. Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage VGE(th) ∆VGE(th)/∆TJ gfe ICES Gate Threshold Voltage Temp. Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current VFM Diode Forward Voltage Drop IGES Gate-to-Emitter Leakage Current V(BR)CES ∆V(BR)CES/∆TJ Min. Typ. Max. Units Conditions 600 — — V VGE = 0V, IC = 250µA — 0.70 — V/°C VGE = 0V, IC = 1.0mA — 1.7 2.0 IC = 27A VGE = 15V — 2.2 — V IC = 49A See Fig. 2, 5 — 1.9 — IC = 27A, T J = 150°C 3.0 — 5.5 VCE = VGE, IC = 250µA — -12 — mV/°C VCE = VGE, IC = 250µA 9.2 12 — S VCE = 100V, IC = 27A — — 250 µA VGE = 0V, VCE = 600V — — 3500 VGE = 0V, VCE = 600V, T J = 150°C — 1.3 1.7 V IC = 15A See Fig. 13 — 1.2 1.6 IC = 15A, T J = 150°C — — ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres trr Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge di(rec)M/dt Diode Peak Rate of Fall of Recovery During tb Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 20 ) Min. — — — — — — — — — — — — — — — — — — — — — — — — — — — Typ. 59 8.6 25 71 76 320 210 1.3 3.2 4.5 70 73 540 480 7.8 13 1500 190 20 42 74 4.0 6.5 80 220 188 160 Max. Units Conditions 80 IC = 27A 10 nC VCC = 400V 42 See Fig. 8 — TJ = 25°C — ns IC = 27A, VCC = 480V 480 VGE = 15V, RG = 10Ω 320 Energy losses include "tail" and — diode reverse recovery. — mJ See Fig. 9, 10, 11, 18 6.8 — TJ = 150°C, See Fig. 9, 10, 11, 18 — ns IC = 27A, VCC = 480V — VGE = 15V, RG = 10Ω — Energy losses include "tail" and — mJ diode reverse recovery. — nH Measured 5mm from package — VGE = 0V — pF VCC = 30V See Fig. 7 — ƒ = 1.0MHz 60 ns TJ = 25°C See Fig. 120 TJ = 125°C 14 IF = 15A 6.0 A TJ = 25°C See Fig. 10 TJ = 125°C 15 V R = 200V 180 nC TJ = 25°C See Fig. 600 TJ = 125°C 16 di/dt = 200A/µs — A/µs TJ = 25°C See Fig. — TJ = 125°C 17 VCC=80%(VCES), VGE=20V, L=10µH, RG= 10Ω, ( See fig. 19 ) Pulse width ≤ 80µs; duty factor ≤ 0.1%. C-118 Pulse width 5.0µs, single shot. IRGPC40FD2 30 D u ty c y c le : 5 0 % TJ = 1 2 5 ° C T s in k = 9 0 ° C G a te d r iv e a s s p e c ifie d T u r n -o n lo s s e s in c lu d e e ffe c ts o f re v e rs e re c o ve ry P o w e r D is s ip a tio n = 3 5 W Load Current (A) 25 20 6 0 % o f ra te d v o lta g e 15 10 5 A 0 0.1 1 10 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 1000 IC , C ollector-to-E mitter C urrent (A ) I C , Collector-to-E m itter C urrent (A) 1000 TJ = 25 °C 100 TJ = 15 0 °C 10 V G E = 1 5V 2 0µ s P U LS E W IDTH 1 0.1 1 100 T J = 15 0°C 10 T J = 2 5°C 1 0.1 V C C = 10 0 V 5 µs P U L S E W ID TH 0.01 10 5 V C E , C ollector-to-E m itter V oltage (V ) 10 15 V G E , G ate-to -E m itter V o lta ge (V ) Fig. 3 - Typical Transfer Characteristics Fig. 2 - Typical Output Characteristics C-119 20 IRGPC40FD2 3.0 V G E = 15 V V C E , C ollector-to-E m itter V oltage (V) M axim um D C C ollector C urrent (A ) 50 40 30 20 10 VG E = 1 5 V 80 µs P UL S E W ID TH 2.5 I C = 54 A 2.0 I C = 27 A 1.5 I C = 1 4A 1.0 0 25 50 75 100 125 -60 150 -40 -20 0 20 40 60 80 1 00 120 140 160 TC , C ase Tem perature (°C ) T C , C ase Tem perature (°C ) Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature Fig. 4 - Maximum Collector Current vs. Case Temperature Therm al R esponse (Z th JC ) 1 D = 0 .5 0 0.2 0 0.1 0.1 0 PD M 0 .05 0.0 2 t SIN G LE P UL SE (TH ER MA L R E SP O NS E ) t N o te s: 1 . D u ty fa c to r D = t 0.0 1 0.01 0.00001 1 1 / t 2 2 2 . P e a k TJ = P D M x Z thJ C + T C 0.0001 0.001 0.01 0.1 1 t 1 , R ectangular Pulse D uration (sec) Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case C-120 10 IRGPC40FD2 3000 V G E , G ate-to-E m itter V oltage (V) 2500 C , C apacitance (pF) 20 V GE = 0V, f = 1MHz C ies = C ge + C gc , Cce SHORTED C res = C gc C oes = C ce + C gc 16 Cies 2000 V C E = 4 00 V I C = 27A 12 Coes 1500 1000 Cres 500 8 4 0 0 1 10 0 1 00 10 V C E , C ollector-to-E m itter V oltage (V) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage = 480V = 15V = 25°C = 27A Total Switching Losses (mJ) Total Switching Losses (mJ) VCC VGE TC IC 4.8 4.7 4.6 A 4.5 0 10 20 30 40 50 30 40 50 60 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 100 4.9 20 Q g , Total G ate C harge (nC ) 60 RG = 10Ω V GE = 15V V CC = 480V I C = 54A 10 IC = 27A IC = 14A 1 -60 A -40 -20 0 20 40 60 80 100 120 140 160 TC , Case Temperature (°C) RG , Gate Resistance (Ω) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Case Temperature C-121 IRGPC40FD2 1000 16.0 I C , C ollecto r-to -E m itter C u rrent (A ) RG = 10Ω T C = 150°C V CC = 480V V GE = 15V 12.0 8.0 4.0 A 0.0 0 20 40 VGGE E= 2 0V T J = 125 °C 100 S A FE O P E RA TIN G A RE A 10 1 60 1 I C , Collector-to-Emitter Current (A) 10 100 V C E , Collecto r-to-E m itter V oltage (V ) Fig. 12 - Turn-Off SOA Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 100 Instantaneous Forward Current - I F (A) Total Switching Losses (mJ) 20.0 10 TJ = 150°C TJ = 125°C TJ = 25°C 1 0.8 1.2 1.6 2.0 2.4 Forward Voltage Drop - V FM (V) Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current C-122 1000 IRGPC40FD2 100 100 VR = 200V TJ = 125°C TJ = 25°C VR = 200V TJ = 125°C TJ = 25°C 80 I IRRM - (A) t rr - (ns) I F = 30A I F = 30A 60 I F = 15A IF = 15A 10 I F = 5.0A 40 I F = 5.0A 20 100 di f /dt - (A/µs) 1 100 1000 di f /dt - (A/µs) 1000 Fig. 15 - Typical Recovery Current vs. dif/dt Fig. 14 - Typical Reverse Recovery vs. dif/dt 800 1000 VR = 200V TJ = 125°C TJ = 25°C VR = 200V TJ = 125°C TJ = 25°C di(rec)M/dt - (A/µs) 600 Q RR - (nC) IF = 30A 400 I F = 15A IF = 5.0A I F = 5.0A I F = 15A I F = 30A 200 0 100 di f /dt - (A/µs) 1000 Fig. 16 - Typical Stored Charge vs. dif/dt 100 100 di f /dt - (A/µs) Fig. 17 - Typical di(rec)M/dt vs. dif/dt C-123 1000 IRGPC40FD2 90% Vge +Vge Vce Same type device as D.U.T. Ic 90% Ic 10% Vce Ic 5% Ic 430µF 80% of Vce D.U.T. td(off) tf Eoff = Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t1 ∫ t1+5µS Vce ic dt t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf trr GATE VOLTAGE D.U.T. 10% +Vg Qrr = Ic ∫ trr id dt tx +Vg tx 10% Vcc 10% Irr Vcc DUT VOLTAGE AND CURRENT Vce Vpk Irr Vcc 10% Ic Ipk 90% Ic Ic DIODE RECOVERY WAVEFORMS tr td(on) t1 5% Vce ∫ t2 Eon = Vce ie dt t1 DIODE REVERSE RECOVERY ENERGY t2 t3 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, ∫ t4 Erec = Vd id dt t3 t4 Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr Defining Erec, trr, Qrr, Irr Refer to Section D for the following: Appendix D: Section D - page D-6 Fig. 18e - Macro Waveforms for Test Circuit of Fig. 18a Fig. 19 - Clamped Inductive Load Test Circuit Fig. 20 - Pulsed Collector Current Test Circuit Package Outline 3 - JEDEC Outline TO-247AC (TO-3P) C-124 Section D - page D-13 Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/