IRGPC50FD2

PD - 9.800 IRGPC50FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features C • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 1.7V G @VGE = 15V, IC = 39A E n-channel Description Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, motor control, UPS and power supply applications. TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. Max. Units 600 70 39 280 280 25 280 ± 20 200 78 -55 to +150 V A V W °C 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1 N•m) Thermal Resistance Parameter RθJC RθJC RθCS RθJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight C-125 Min. Typ. Max. — — — — — — — 0.24 — 6 (0.21) 0.64 0.83 — 40 — Units °C/W g (oz) Revision 1 IRGPC50FD2 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES ∆V(BR)CES/∆TJ VCE(on) VGE(th) ∆VGE(th)/∆TJ gfe ICES VFM IGES Parameter Collector-to-Emitter Breakdown Voltage Temp. Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage Min. Typ. Max. Units Conditions 600 — — V VGE = 0V, IC = 250µA — 0.62 — V/°C VGE = 0V, IC = 1.0mA — 1.6 1.7 IC = 39A VGE = 15V — 2.0 — V IC = 70A See Fig. 2, 5 — 1.7 — IC = 39A, T J = 150°C Gate Threshold Voltage 3.0 — 5.5 VCE = VGE, IC = 250µA Temperature Coeff. of Threshold Voltage — -14 — mV/°C VCE = VGE, IC = 250µA Forward Transconductance 21 24 — S VCE = 100V, IC = 39A Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, VCE = 600V — — 6500 VGE = 0V, VCE = 600V, T J = 150°C Diode Forward Voltage Drop — 1.3 1.7 V IC = 25A See Fig. 13 — 1.2 1.5 IC = 25A, T J = 150°C Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres trr Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge di(rec)M/dt Diode Peak Rate of Fall of Recovery During tb Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 20 ) Min. — — — — — — — — — — — — — — — — — — — — — — — — — — — Typ. 110 20 50 70 110 400 290 2.5 6.0 8.5 68 100 760 520 14 13 3000 340 40 50 105 4.5 8.0 112 420 250 160 Max. Units Conditions 170 IC = 39A 30 nC VCC = 400V 75 See Fig. 8 — TJ = 25°C — ns IC = 39A, VCC = 480V 600 VGE = 15V, RG = 5.0Ω 400 Energy losses include "tail" and — diode reverse recovery. — mJ See Fig. 9, 10, 11, 18 13 — TJ = 150°C, See Fig. 9, 10, 11, 18 — ns IC = 39A, VCC = 480V — VGE = 15V, RG = 5.0Ω — Energy losses include "tail" and — mJ diode reverse recovery. — nH Measured 5mm from package — VGE = 0V — pF VCC = 30V See Fig. 7 — ƒ = 1.0MHz 75 ns TJ = 25°C See Fig. 160 TJ = 125°C 14 IF = 25A 10 A TJ = 25°C See Fig. 15 TJ = 125°C 15 V R = 200V 375 nC TJ = 25°C See Fig. 1200 TJ = 125°C 16 di/dt = 200A/µs — A/µs TJ = 25°C See Fig. — TJ = 125°C 17 VCC=80%(VCES), VGE=20V, L=10µH, RG= 5.0Ω, ( See fig. 19 ) Pulse width ≤ 80µs; duty factor ≤ 0.1%. C-126 Pulse width 5.0µs, single shot. IRGPC50FD2 30 D u ty c y cl e : 5 0 % TJ = 1 2 5 ° C T s in k = 9 0 ° C G a te d riv e a s s p e c ifie d T u rn -o n lo s s e s in c lu d e e f fe c ts o f re v e r s e re c o v e ry P o w e r D is s ip a tio n = 4 0 W Load Current (A) 25 20 6 0 % o f ra te d v o lta g e 15 10 5 A 0 0.1 1 10 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 1000 TJ = 2 5°C TJ = 25 °C IC , Collector-to-E m itter C urrent (A ) I C , Collector-to-E m itter C urrent (A) 1000 TJ = 1 50 °C 100 10 V G E = 15 V 2 0 µs P U L S E W ID TH 1 0.1 1 TJ = 1 5 0°C 100 10 V C C = 1 00 V 5µ s P U L S E W ID TH 1 10 5 10 15 V G E , G ate -to-E m itter V olta ge (V ) V C E , C o llector-to-Em itter V oltage (V) Fig. 3 - Typical Transfer Characteristics Fig. 2 - Typical Output Characteristics C-127 20 IRGPC50FD2 3.0 V G E = 15 V VC E , C o llector-to-E mitte r V oltage (V ) M aximum D C Collector Current (A ) 70 60 50 40 30 20 10 VG E = 1 5 V 80 µs P UL S E W ID TH I C = 78 A 2.5 2.0 I C = 39 A 1.5 I C = 20 A 1.0 0 25 50 75 100 125 -60 150 -40 -20 0 20 40 60 80 1 00 120 140 160 TC , C ase Tem perature (°C ) T C , C ase Tem perature (°C ) Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature Fig. 4 - Maximum Collector Current vs. Case Temperature T he rm al R espons e (Z thJC ) 1 D = 0 .5 0 0 .2 0 0.1 0 .1 0 PDM 0 .0 5 t 0 .0 2 0.01 0.00001 t2 S ING L E P U L S E (TH E R M A L R E S PO N S E) 0 .0 1 1 N o te s : 1 . D u ty fa c to r D = t 1 / t 2 2 . P e a k TJ = P D M x Z th J C + T C 0.000 1 0.001 0.01 0.1 1 t 1 , R ectangu lar Pulse D u ration (sec) Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case C-128 10 IRGPC50FD2 7000 5000 V G E , G ate-to-E m itte r V oltag e (V ) 6000 C , C apacitance (pF ) 20 V GE = 0V, f = 1MHz C ies = C ge + C gc , C ce SHORTED C res = C gc C oes = C ce + C gc V C E = 48 0V I C = 39 A 16 Cies 12 4000 Coes 3000 2000 Cres 1000 8 4 0 0 1 10 0 1 00 30 Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage 90 120 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 100 VCC VGE TC IC 9.0 = 480V = 15V = 25°C = 39A Total Switching Losses (mJ) 9.2 Total Switching Losses (mJ) 60 Q g , T o tal G a te C h a rg e (n C ) V C E , C o llector-to-Em itter V oltage (V) 8.8 8.6 8.4 A 8.2 0 10 20 30 40 50 60 RG = 5.0Ω V GE = 15V V CC = 480V I C = 78A I C = 39A 10 I C = 20A 1 -60 A -40 -20 0 20 40 60 80 100 120 140 160 TC , Case Temperature (°C) RG , Gate Resistance (Ω) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Case Temperature C-129 IRGPC50FD2 1000 I C , C o lle c to r-to -E m itte r C u rre n t (A ) RG = 5Ω T C = 150°C V CC = 480V V GE = 15V 30 20 10 A 0 0 20 40 60 VGGE E= 20 V T J = 12 5°C S A FE O P E RA TIN G A RE A 100 10 1 80 1 10 100 V C E , C o lle cto r-to-E m itte r V olta g e (V ) I C , Collector-to-Emitter Current (A) Fig. 12 - Turn-Off SOA Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 100 Instantaneous Forward Current - I F (A) Total Switching Losses (mJ) 40 TJ = 150°C TJ = 125°C 10 1 0.6 TJ = 25°C 1.0 1.4 1.8 2.2 2.6 Forward Voltage Drop - V FM (V) Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current C-130 1000 IRGPC50FD2 100 140 VR = 200V TJ = 125°C TJ = 25°C VR = 200V TJ = 125°C TJ = 25°C 120 I IRRM - (A) t rr - (ns) 100 IF = 50A 80 IF = 25A I F = 50A I F = 25A 10 I F = 10A IF = 10A 60 40 20 100 di f /dt - (A/µs) 1 100 1000 1000 di f /dt - (A/µs) Fig. 15 - Typical Recovery Current vs. dif/dt Fig. 14 - Typical Reverse Recovery vs. dif/dt 1500 10000 VR = 200V TJ = 125°C TJ = 25°C VR = 200V TJ = 125°C TJ = 25°C di(rec)M/dt - (A/µs) Q RR - (nC) 1200 900 IF = 50A 600 IF = 25A 1000 IF = 10A IF = 25A 300 I F = 10A 0 100 di f /dt - (A/µs) IF = 50A 1000 100 100 1000 di f /dt - (A/µs) Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt C-131 IRGPC50FD2 90% Vge +Vge Vce Same type device as D.U.T. Ic 90% Ic 10% Vce Ic 5% Ic 430µF 80% of Vce td(off) D.U.T. tf Eoff = Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t1 ∫ t1+5µS Vce ic dt t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf trr GATE VOLTAGE D.U.T. 10% +Vg Qrr = Ic ∫ trr id dt tx +Vg tx 10% Vcc 10% Irr Vcc DUT VOLTAGE AND CURRENT Vce Vpk Irr Vcc 10% Ic Ipk 90% Ic Ic DIODE RECOVERY WAVEFORMS tr td(on) t1 5% Vce ∫ t2 Eon = Vce ie dt t1 DIODE REVERSE RECOVERY ENERGY t2 t3 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr ∫ t4 Erec = Vd id dt t3 t4 Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr Refer to Section D for the following: Appendix D: Section D - page D-6 Fig. 18e - Macro Waveforms for Test Circuit of Fig. 18a Fig. 19 - Clamped Inductive Load Test Circuit Fig. 20 - Pulsed Collector Current Test Circuit Package Outline 3 - JEDEC Outline TO-247AC (TO-3P) C-132 Section D - page D-13 Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/