IRGPC50UD2

PD - 9.802A IRGPC50UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve VCE(sat) ≤ 3.0V G @VGE = 15V, IC = 27A E n-channel Description Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, motor control, UPS and power supply applications. TO-247AC Absolute Maximum Ratings Parameter VCES IC @ T C = 25°C IC @ T C = 100°C ICM ILM IF @ T C = 100°C IFM VGE PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. Max. Units 600 55 27 220 220 25 220 ± 20 200 78 -55 to +150 V A V W °C 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1 N•m) Thermal Resistance Parameter RθJC RθJC RθCS RθJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight C-725 Min. Typ. Max. — — — — — — — 0.24 — 6 (0.21) 0.64 0.83 — 40 — Units °C/W g (oz) Revision 1 IRGPC50UD2 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) VCE(on) Parameter Collector-to-Emitter Breakdown Voltage Temp. Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage VGE(th) ∆VGE(th)/∆TJ gfe ICES Gate Threshold Voltage Temp. Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current VFM Diode Forward Voltage Drop IGES Gate-to-Emitter Leakage Current V(BR)CES ∆V(BR)CES/∆TJ Min. Typ. Max. Units Conditions 600 — — V VGE = 0V, I C = 250µA — 0.60 — V/°C VGE = 0V, IC = 1.0mA — 1.9 3.0 IC = 27A V GE = 15V — 2.4 — V IC = 55A See Fig. 2, 5 — 1.9 — IC = 27A, T J = 150°C 3.0 — 5.5 VCE = VGE, IC = 250µA — -13 — mV/°C VCE = VGE, IC = 250µA 16 24 — S VCE = 100V, I C = 27A — — 250 µA VGE = 0V, V CE = 600V — — 6500 VGE = 0V, V CE = 600V, T J = 150°C — 1.3 1.7 V IC = 25A See Fig. 13 — 1.2 1.5 IC = 25A, T J = 150°C — — ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres trr Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge di(rec)M/dt Diode Peak Rate of Fall of Recovery During t b Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 20 ) Min. — — — — — — — — — — — — — — — — — — — — — — — — — — — Typ. 110 17 53 73 71 210 150 1.4 1.6 3.0 73 67 360 230 4.5 13 2900 330 40 50 105 4.5 8.0 112 420 250 160 Max. Units Conditions 140 IC = 27A 21 nC VCC = 400V 70 See Fig. 8 — TJ = 25°C — ns IC = 27A, V CC = 480V 320 VGE = 15V, R G = 5.0Ω 280 Energy losses include "tail" and — diode reverse recovery. — mJ See Fig. 9, 10, 11, 18 4.5 — TJ = 150°C, See Fig. 9, 10, 11, 18 — ns IC = 27A, V CC = 480V — VGE = 15V, R G = 5.0Ω — Energy losses include "tail" and — mJ diode reverse recovery. — nH Measured 5mm from package — VGE = 0V — pF VCC = 30V See Fig. 7 — ƒ = 1.0MHz 75 ns TJ = 25°C See Fig. 160 TJ = 125°C 14 I F = 25A 10 A TJ = 25°C See Fig. 15 TJ = 125°C 15 V R = 200V 375 nC TJ = 25°C See Fig. 1200 TJ = 125°C 16 di/dt = 200A/µs — A/µs TJ = 25°C See Fig. — TJ = 125°C 17 VCC=80%(V CES), VGE=20V, L=10µH, R G= 5.0Ω, ( See fig. 19 ) Pulse width ≤ 80µs; duty factor ≤ 0.1%. C-726 Pulse width 5.0µs, single shot. IRGPC50UD2 40 D u ty c ycle : 5 0 % T J = 1 25 °C T sin k = 9 0 °C G a te d rive a s sp ecified Tu rn -on los se s inc lu de e ffe cts o f rev erse recov ery P ower D issipation = 40W Load Current (A) 30 6 0 % o f ra te d vo lt a g e 20 10 A 0 0.1 1 10 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = I RMS of fundamental) 1000 IC , Collector-to-Emitter Current (A) I C , Collector-to-E m itter C urrent (A) 1000 TJ = 25 °C 100 TJ = 1 50 °C 10 V G E = 15 V 20 µ s P UL S E W ID TH 1 0 .1 1 100 TJ = 150°C TJ = 25°C 10 VCC = 100V 5µs PULSE WIDTH 1 5 10 10 15 VGE, Gate-to-Emitter Voltage (V) V C E , C o llector-to-E m itter V oltage (V ) Fig. 3 - Typical Transfer Characteristics Fig. 2 - Typical Output Characteristics C-727 20 IRGPC50UD2 3.0 V G E = 15 V VC E , Co lle ctor-to-E m itter V oltage (V ) M axim um DC C ollector C urrent (A) 60 50 40 30 20 10 V G E = 15 V 80 µs P UL S E W ID TH I C = 5 4A 2.5 2.0 I C = 27 A 1.5 I C = 14 A 1.0 0 25 50 75 100 125 -60 150 T C , C ase Tem perature (°C ) -40 -20 0 20 40 60 80 100 120 140 160 TC , C ase Tem perature (°C ) Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature Fig. 4 - Maximum Collector Current vs. Case Temperature T herma l R espo nse (Z thJ C ) 1 D = 0.5 0 0.2 0 0.1 0.1 0 PD M 0 .0 5 t SIN G LE P U LSE (TH ER MA L R E SP O N SE ) 0.02 t2 N o te s : 1 . D u ty fa c to r D = t 0.01 0.01 0.00001 1 1 /t 2 2 . P e a k T J = P D M x Z thJ C + T C 0.0 001 0.001 0.01 0.1 1 t 1 , R ectangular Pulse D ura tion (sec) Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case C-728 10 IRGPC50UD2 20 7000 C , C apacitance (pF ) 6000 V G E , G a te -to -E m itte r V o lta g e (V ) V GE = 0V, f = 1MHz C ies = C ge + C gc , Cce SHORTED C res = C gc C oes = C ce + C gc V C E = 48 0V I C = 27 A 16 5000 12 4000 Cies 3000 Coes 2000 1000 8 4 Cres 0 0 1 10 0 1 00 30 Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage VCC VGE TC IC 3.4 90 100 = 480V = 15V = 25°C = 27A 3.3 3.2 3.1 3.0 2.9 R G = 5Ω V GE = 15V V CC = 480V I C = 54A 10 I C = 27A I C = 14A 1 A 0.1 0 10 20 30 40 50 12 0 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Total Switching Losses (mJ) Total Switching Losses (mJ) 3.5 60 Q g , T o tal G a te C h a rg e (n C ) V C E , C ollector-to-E m itter V oltage (V ) 60 R G , Gate Resistance (Ω) -60 W Fig. 9 - Typical Switching Losses vs. Gate Resistance -40 -20 0 20 40 60 80 100 120 140 160 TC , Case Temperature (°C) Fig. 10 - Typical Switching Losses vs. Case Temperature C-729 IRGPH50UD2 10 1000 = 5Ω = 150°C = 480V = 15V I C , Collector-to-E m itter C urrent (A) RG TC V CC V GE 8 6 4 2 A 0 0 20 40 VGGE E= 2 0V T J = 125 °C S A FE O P E R A TING A R E A 100 10 1 60 1 I C , Collector-to-Emitter Current (A) 10 100 V C E , Collecto r-to-E m itter V oltage (V ) Fig. 12 - Turn-Off SOA Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 100 Instantaneous Forward Current - I F (A) Total Switching Losses (mJ) 12 TJ = 150°C TJ = 125°C 10 1 0.6 TJ = 25°C 1.0 1.4 1.8 2.2 2.6 Forward Voltage Drop - V FM (V) Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current C-730 1000 IRGPC50UD2 100 140 VR = 200V TJ = 125°C TJ = 25°C VR = 200V TJ = 125°C TJ = 25°C 120 I IRRM - (A) t rr - (ns) 100 IF = 50A 80 I F = 25A I F = 50A I F = 25A 10 I F = 10A IF = 10A 60 40 20 100 di f /dt - (A/µs) 1 100 1000 1000 di f /dt - (A/µs) Fig. 15 - Typical Recovery Current vs. dif/dt Fig. 14 - Typical Reverse Recovery vs. dif/dt 1500 10000 VR = 200V TJ = 125°C TJ = 25°C VR = 200V TJ = 125°C TJ = 25°C di(rec)M/dt - (A/µs) Q RR - (nC) 1200 900 I F = 50A 600 IF = 25A 1000 IF = 10A I F = 25A 300 I F = 10A 0 100 di f /dt - (A/µs) IF = 50A 1000 Fig. 16 - Typical Stored Charge vs. dif/dt 100 100 di f /dt - (A/µs) Fig. 17 - Typical di(rec)M/dt vs. dif/dt C-731 1000 IRGPC50UD2 90% Vge +Vge Same type device as D.U.T. Vce 430µF 80% of Vce Ic 90% Ic 10% Vce Ic D.U.T. 5% Ic td(off) tf Eoff = Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode) , trr, Qrr, Irr, td(on), tr, td(off), tf t1 ∫ t1+5µS Vce ic dt t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf trr GATE VOLTAGE D.U.T. 10% +Vg Qrr = Ic ∫ trr id dt tx +Vg tx 10% Vcc 10% Irr Vcc DUT VOLTAGE AND CURRENT Vce Vpk Irr Vcc 10% Ic 90% Ic Ipk Ic DIODE RECOVERY WAVEFORMS tr td(on) 5% Vce t1 ∫ t2 Eon = Vce ie dt t1 DIODE REVERSE RECOVERY ENERGY t2 t3 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, ∫ t4 Erec = Vd id dt t3 t4 Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining E on, td(on), tr Defining E rec, trr, Qrr, Irr Refer to Section D for the following: Appendix D: Section D - page D-6 Fig. 18e - Macro Waveforms for Test Circuit of Fig. 18a Fig. 19 - Clamped Inductive Load Test Circuit Fig. 20 - Pulsed Collector Current Test Circuit Package Outline 3 - JEDEC Outline TO-247AC C-732 Section D - page D-13 Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/