IRGPF40F

PD - 9.770A IRGPF40F INSULATED GATE BIPOLAR TRANSISTOR Features Fast Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve VCES = 900V VCE(sat) ≤ 3.3V G @VGE = 15V, I C = 17A E n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. TO-247AC Absolute Maximum Ratings Parameter VCES IC @ T C = 25°C IC @ T C = 100°C ICM ILM VGE EARV PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Max. Units 900 31 17 62 62 ±20 15 160 65 -55 to +150 V A V mJ W °C 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1N•m) Thermal Resistance Parameter RθJC RθCS RθJA Wt Junction-to-Case Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight C-261 Min. Typ. Max. — — — — — 0.24 — 6 (0.21) 0.77 — 40 — Units °C/W g (oz) Revision 0 IRGPF40F Electrical Characteristics @ TJ = 25°C (unless otherwise specified) VCE(on) Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage VGE(th) ∆VGE(th)/∆TJ gfe ICES Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current IGES Gate-to-Emitter Leakage Current V(BR)CES V(BR)ECS ∆V(BR)CES/∆TJ Min. Typ. Max. Units Conditions 900 — — V VGE = 0V, I C = 250µA 20 — — V VGE = 0V, IC = 1.0A — 0.80 — V/°C VGE = 0V, I C = 1.0mA — 2.5 3.3 IC = 17A V GE = 15V — 3.2 — V IC = 31A See Fig. 2, 5 — 2.9 — IC = 17A, T J = 150°C 3.0 — 5.5 VCE = VGE, IC = 250µA — -12 — mV/°C VCE = VGE, IC = 250µA 5.2 13 — S VCE = 100V, I C = 17A — — 250 µA VGE = 0V, V CE = 900V — — 1000 VGE = 0V, V CE = 900V, T J = 150°C — — ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Min. — — — — — — — — — — — — — — — — — — — Typ. Max. Units Conditions 45 68 IC = 17A 8.7 13 nC VCC = 400V See Fig. 8 15 23 VGE = 15V 28 — TJ = 25°C 12 — ns IC = 17A, V CC = 720V 170 320 VGE = 15V, R G = 10Ω 110 300 Energy losses include "tail" 0.52 — 1.05 — mJ See Fig. 9, 10, 11, 14 1.57 3.1 27 — TJ = 150°C, 14 — ns IC = 17A, V CC = 720V 250 — VGE = 15V, R G = 10Ω 240 — Energy losses include "tail" 3.0 — mJ See Fig. 10, 14 13 — nH Measured 5mm from package 1200 — VGE = 0V 91 — pF VCC = 30V See Fig. 7 15 — ƒ = 1.0MHz Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 13b ) Repetitive rating; pulse width limited by maximum junction temperature. VCC=80%(V CES), VGE=20V, L=10µH, R G= 10Ω, ( See fig. 13a ) Pulse width ≤ 80µs; duty factor ≤ 0.1%. C-262 Pulse width 5.0µs, single shot. IRGPF40F 50 For b oth : 40 LO A D CU R R E N T (A ) Triangula r w ave: D uty c y cle: 50% TJ = 125°C T sink = 90° C G ate driv e as spe c ified P o w e r Diss ipa tio n = 3 5W C lamp voltage: 80% of rated 30 S quare w ave: 60% of rated voltage 20 10 Ideal diodes 0 0.1 1 10 100 f, F re quency (kH z) Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=I RMS of fundamental; for triangular wave, I=I PK) 1000 IC , Collector-to-Em itter C urrent (A ) I C , C ollector-to-E mitter C urrent (A ) 1000 100 TJ = 2 5°C TJ = 1 50 °C 10 V G E = 15 V 20 µs P UL S E W ID TH 1 1 T J = 25 °C 100 TJ = 1 50 °C 10 V C C = 1 00 V 5 µ s P U L S E W ID TH 1 5 10 10 15 V G E , G ate -to-E m itter V olta ge (V ) V C E , C o llector-to-Em itter V oltage (V) Fig. 3 - Typical Transfer Characteristics Fig. 2 - Typical Output Characteristics C-263 20 IRGPF40F 5.0 V G E = 15 V V C E , C o llec to r-to-E m itter V oltage (V ) M axim um D C C ollector C urrent (A) 40 30 20 10 V G E = 1 5V 8 0µ s P U LS E W IDTH I C = 3 4A 4.0 3.0 I C = 1 7A I C = 8.5 A 2.0 0 25 50 75 100 125 -60 150 T C , C ase Tem perature (°C ) -40 -20 0 20 40 60 80 100 120 140 160 T C , C a s e Te m p e ra ture (°C ) Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature Fig. 4 - Maximum Collector Current vs. Case Temperature T herm al Response (Z th JC ) 1 D = 0 .5 0 0.2 0 0.1 0.1 0 PD M 0 .05 0.0 2 t t2 N o te s: 1 . D u ty fa c to r D = t 0.0 1 0.01 0.00001 1 SIN G LE P UL SE (TH ER MA L R E SP O NS E ) 1 / t 2 2 . P e a k TJ = P D M x Z thJ C + T C 0.0001 0.001 0.01 0.1 1 t 1 , R ectangular Pulse D uration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case C-264 10 IRGPF40F 24 0 0 V G E , G ate-to-E m itter V oltag e (V ) 20 0 0 C, C apacitance (pF) 20 V GE = 0V, f = 1MHz C ies = C ge + C gc , Cce SHORTED C res = C gc C oes = C ce + C gc 16 16 0 0 Cies 12 12 0 0 Coes 800 400 V C E = 40 0V I C = 17 A Cres 0 8 4 0 1 10 100 0 10 V C E , C o llector-to-Em itter V oltage (V) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage VC C VG E TC IC T o tal S w itc hin g L os se s (m J) 1 .7 4 1 .6 6 1 .6 2 50 I C = 34 A I C = 17 A 1 I C = 8.5 A 1 .5 8 1 .5 4 0.1 10 40 10 = 72 0V = 1 5V = 25°C = 17 A 1 .7 0 0 30 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage To ta l S w itc hing Lo sse s (m J) 1 .7 8 20 Q g , T o tal G a te C h a rg e (n C ) 20 30 40 50 60 R G = 10 Ω V GE = 15 V V CC = 7 20 V -60 R G , G a te R e s is ta n c e ( Ω ) -40 -20 0 20 40 60 80 100 120 140 160 TC , C a s e T e m p era tu re (°C ) W Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Case Temperature C-265 IRGPF40F RG TC VCC VGE 8 1000 = 10 Ω = 1 50°C = 72 0V = 1 5V I C , C ollec to r-to-E m itte r C urren t (A ) T ota l S w itc h ing L o s s e s (m J ) 10 6 4 2 0 VGGE E= 20 V T J = 12 5°C 100 S A FE O P E R A TIN G A R E A 10 1 0.1 0 10 20 30 40 1 10 100 V C E , C o lle cto r-to-E m itte r V olta g e (V ) I C , C o lle c to r-to -E m itte r C u rre n t (A ) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA Refer to Section D for the following: Appendix F: Section D - page D-8 Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit Fig. 14a - Switching Loss Test Circuit Fig. 14b - Switching Loss Waveform Package Outline 3 - JEDEC Outline TO-247AC (TO-3P) C-266 Section D - page D-13 1000 Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/