IRGPF50F

PD - 9.767A IRGPF50F INSULATED GATE BIPOLAR TRANSISTOR Features Fast Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve VCES = 900V VCE(sat) ≤ 2.7V G @VGE = 15V, I C = 28A E n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. TO-247AC Absolute Maximum Ratings Parameter VCES IC @ T C = 25°C IC @ T C = 100°C ICM ILM VGE EARV PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Max. Units 900 51 28 100 100 ±20 20 200 78 -55 to +150 V A V mJ W °C 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1N•m) Thermal Resistance Parameter RθJC RθCS RθJA Wt Junction-to-Case Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight C-267 Min. Typ. Max. --------------------- -----0.24 -----6 (0.21) 0.64 -----40 ------ Units °C/W g (oz) Revision 0 IRGPF50F Electrical Characteristics @ TJ = 25°C (unless otherwise specified) VCE(on) Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage VGE(th) ∆VGE(th)/∆TJ gfe ICES Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current IGES Gate-to-Emitter Leakage Current V(BR)CES V(BR)ECS ∆V(BR)CES/∆TJ Min. Typ. Max. Units Conditions 900 ------V VGE = 0V, I C = 250µA 20 ------V VGE = 0V, IC = 1.0A ---- 0.74 ---- V/°C VGE = 0V, I C = 1.0mA ---2.1 2.7 IC = 28A V GE = 15V ---2.7 ---V IC = 51A See Fig. 2, 5 ---2.4 ---IC = 28A, T J = 150°C 3.0 ---5.5 VCE = VGE, IC = 250µA ---- -9.7 ---- mV/°C VCE = VGE, IC = 250µA 12 18 ---S VCE = 100V, I C = 28A ------- 250 µA VGE = 0V, V CE = 900V ------- 2000 VGE = 0V, V CE = 900V, T J = 150°C ------- ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Min. ---------------------------------------------------------- Typ. 81 16 29 32 22 200 130 1.1 1.8 2.9 32 20 480 450 5.7 13 2300 180 27 Max. Units Conditions 120 IC = 28A 24 nC VCC = 400V See Fig. 8 44 VGE = 15V ---TJ = 25°C ---ns IC = 28A, V CC = 720V 280 VGE = 15V, R G = 5.0Ω 180 Energy losses include "tail" ------mJ See Fig. 9, 10, 11, 14 4.1 ---TJ = 150°C, ---ns IC = 28A, V CC = 720V ---VGE = 15V, R G = 5.0Ω ---Energy losses include "tail" ---mJ See Fig. 10, 14 ---nH Measured 5mm from package ---VGE = 0V ---pF VCC = 30V See Fig. 7 ---ƒ = 1.0MHz Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 13b ) Repetitive rating; pulse width limited by maximum junction temperature. VCC=80%(V CES), VGE=20V, L=10µH, R G= 5.0Ω, ( See fig. 13a ) Pulse width ≤ 80µs; duty factor ≤ 0.1%. C-268 Pulse width 5.0µs, single shot. IRGPF50F 60 For b oth : Triangula r w ave: LO A D C UR R E N T (A ) D uty c yc le: 50% TJ = 125°C T sink = 90°C G ate d rive as s pec ified P ow e r Diss ipa tion = 4 0W 40 C lamp voltage: 80% of rated S quare w ave: 60% of rated voltage 20 Ideal diodes 0 0.1 1 10 100 f, F re quency (kH z) Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=I RMS of fundamental; for triangular wave, I=I PK) 1000 IC , Collector-to-Em itter C urrent (A ) I C , C ollector-to-E mitter C urrent (A ) 1000 TJ = 2 5°C 100 T J = 1 50 °C 10 V G E = 15 V 20 µs P UL S E W ID TH 1 1 100 TJ = 1 50 °C TJ = 25 °C 10 V C C = 1 00 V 5 µ s P U L S E W ID TH 1 5 10 10 15 V G E , G ate -to-E m itter V olta ge (V ) V C E , C o llector-to-Em itter V oltage (V) Fig. 3 - Typical Transfer Characteristics Fig. 2 - Typical Output Characteristics C-269 20 IRGPF50F 4.0 V G E = 15 V V C E , C ollector-to-E m itter V oltage (V) Maxim um D C Collector C urrent (A ) 60 50 40 30 20 10 VG E = 1 5 V 80 µs P UL S E W ID TH 3.5 I C = 56 A 3.0 2.5 I C = 28 A 2.0 I C = 1 4A 1.5 1.0 0 25 50 75 100 125 -60 150 -40 -20 0 20 40 60 80 100 120 140 160 TC , C ase Tem perature (°C ) T C , C ase Tem perature (°C ) Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature Fig. 4 - Maximum Collector Current vs. Case Temperature Therm al R esponse (Z th JC ) 1 D = 0.5 0 0 .20 0.1 0.1 0 PD M 0 .05 t t2 0 .02 SIN G LE P U LSE (TH ER M AL R E SP O N SE ) 0.0 1 0.01 0.00001 1 N o te s: 1 . D u ty fa c to r D = t 1 / t 2 2 . P e a k TJ = P D M x Z th J C + T C 0.0001 0.001 0.01 0.1 1 t 1 , R ectangular Pulse D ura tion (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case C-270 10 IRGPF50F 50 0 0 V G E , G ate-to-E m itter V oltage (V ) 40 0 0 C, C apacitance (pF) 20 V GE = 0V, f = 1MHz C ies = C ge + C gc , Cce SHORTED C res = C gc C oes = C ce + C gc 16 Cies 30 0 0 12 Coes 20 0 0 Cres 10 0 0 V C E = 40 0 V I C = 2 8A 0 8 4 0 1 10 100 0 20 V C E , C o llector-to-Em itter V oltage (V) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage VC C VG E TC IC T o ta l S w itc h in g L o s se s (m J ) 4.2 4.0 60 80 1 00 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 100 = 72 0V = 1 5V = 25°C = 28 A T o tal S w itc hing Los se s (m J) 4.4 40 Q g , Total G ate C harge (nC ) 3.8 3.6 3.4 3.2 3.0 RG = 5 Ω V G E = 15 V V C C = 7 20 V I C = 56 A 10 I C = 2 8A I C = 1 4A 1 2.8 2.6 0.1 0 10 20 30 40 50 60 -60 R G , G a te R e s is ta n c e ( Ω ) W Fig. 9 - Typical Switching Losses vs. Gate Resistance -40 -20 0 20 40 60 80 100 120 140 160 TC, C ase Tem perature (°C ) Fig. 10 - Typical Switching Losses vs. Case Temperature C-271 IRGPF50F RG TC V CC VGE 1000 =5Ω = 150 °C = 7 20 V = 15 V I C , C ollec to r-to -E m itter C u rre nt (A ) Total Sw itching Losses (m J) 16 12 8 4 VGGE E= 20 V T J = 12 5°C 100 S A FE O P E RA TIN G A RE A 10 1 0.1 0 10 20 30 40 50 1 60 10 100 V C E , C o lle cto r-to-E m itte r V olta g e (V ) I C , C o llector-to -E m itte r Current (A ) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA Refer to Section D for the following: Appendix F: Section D - page D-8 Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit Fig. 14a - Switching Loss Test Circuit Fig. 14b - Switching Loss Waveform Package Outline 3 - JEDEC Outline TO-247AC (TO-3P) C-272 Section D - page D-13 1000 Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/