IRGPS46160DPBF

IRGPS46160DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C C IC = 160A, TC = 100°C tSC 5µs, TJ(max) = 175°C E C G G VCE(on) typ. = 1.70V @ IC = 120A E Super-247 n-channel Applications • Industrial Motor Drive • Inverters • UPS • Welding G Gate Features Benefits Square RBSOA and Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient 5µs short circuit SOA Lead-Free, RoHS compliant Package Type IRGPS46160DPbF Super-247 E Emitter High efficiency in a wide range of applications and switching frequencies Improved reliability due to rugged hard switching performance and higher power capability Excellent current sharing in parallel operation Enables short circuit protection scheme Environmentally friendly Low VCE(ON) and Switching Losses Base part number C Collector Standard Pack Form Quantity Tube 25 Orderable part number IRGPS46160DPbF Absolute Maximum Ratings VCES Parameter Collector-to-Emitter Voltage IC @ TC = 25°C Continuous Collector Current IC @ TC = 100°C Continuous Collector Current Pulse Collector Current, VGE = 15V 160 ICM ILM Clamped Inductive Load Current, VGE = 20V  IF @ TC = 25°C Diode Continous Forward Current 480 240 IF @ TC = 100°C Diode Continous Forward Current Diode Maximum Forward Current  160 PD @ TC = 25°C Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage Maximum Power Dissipation ±20 ±30 750 PD @ TC = 100°C Maximum Power Dissipation 375 TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw IFM VGE Max. 600 240 Units V 360 A 480 V W -55 to +175 °C 300 (0.063 in. (1.6mm) from case) 10 lbf·in (1.1 N·m) Thermal Resistance Min. ––– RqJC (Diode) Parameter Junction-to-Case (IGBT)  Junction-to-Case (Diode)  RqCS Case-to-Sink (flat, greased surface) RqJA Junction-to-Ambient (typical socket mount) RqJC (IGBT) 1 www.infineon.com © 2019 Infineon Technologies AG Typ. ––– Max. 0.20 ––– ––– 0.63 ––– 0.24 ––– ––– ––– 40 Units °C/W September 20, 2019 IRGPS46160DPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) DV(BR)CES/DTJ Parameter Collector-to-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage VCE(on) Collector-to-Emitter Saturation Voltage VGE(th) DVGE(th)/DTJ gfe ICES Gate Threshold Voltage Threshold Voltage temp. coefficient Forward Transconductance Collector-to-Emitter Leakage Current VFM Diode Forward Voltage Drop IGES Gate-to-Emitter Leakage Current V(BR)CES Min. 600 — — — — 4.0 — — — — — — — Typ. — 0.27 1.70 2.15 2.20 — -17 77 1.0 2.3 2.4 1.9 — Max. — — 2.05 — — 6.5 — — 150 — 3.0 — ±400 Units V V/°C Conditions VGE = 0V, IC = 100µA  VGE = 0V, IC = 4.0mA (25°C-175°C) IC = 120A, VGE = 15V, TJ = 25°C V IC = 120A, VGE = 15V, TJ = 150°C IC = 120A, VGE = 15V, TJ = 175°C V VCE = VGE, IC = 5.6mA mV/°C VCE = VGE, IC = 5.6mA (25°C - 175°C) S VCE = 50V, IC = 120A µA VGE = 0V, VCE = 600V mA VGE = 0V, VCE = 600V, TJ = 175°C V IF = 120A IF = 120A, TJ = 175°C nA VGE = ±20V Min. — — — — — — — — — — — — — — — — — — — — Typ. 240 70 90 5750 3430 9180 80 70 190 40 7740 4390 12130 80 75 230 55 7750 550 225 Max. — — — — — — — — — — — — — — — — — — — — Units Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc Eon Eoff Etotal td(on) tr td(off) tf Eon Eoff Etotal td(on) tr td(off) tf Cies Coes Cres Parameter Total Gate Charge Gate-to-Emitter Charge Gate-to-Collector Charge Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance RBSOA Reverse Bias Safe Operating Area FULL SQUARE SCSOA Short Circuit Safe Operating Area 5 — — µs Erec trr Irr Reverse Recovery Energy of the Diode Diode Reverse Recovery Time Peak Reverse Recovery Current — — — 500 130 36 — — — µJ ns A nC µJ ns µJ ns pF Conditions IC = 120A VGE = 15V VCC = 400V IC = 120A, VCC = 400V, VGE = 15V RG = 4.7W, L = 66µH, TJ = 25°C Energy losses include tail & diode reverse recovery  IC = 120A, VCC = 400V, VGE=15V RG = 4.7W, L = 66µH, TJ = 175°C Energy losses include tail & diode reverse recovery  VGE = 0V VCC = 30V f = 1.0Mhz TJ = 175°C, IC = 480A VCC = 480V, Vp  600V Rg = 4.7 W, VGE = +20V to 0V VCC = 400V, Vp  600V Rg = 4.7 W, VGE = +15V to 0V TJ = 175°C VCC = 400V, IF = 120A VGE = 15V, Rg = 4.7 W, L = 100µH Notes:  VCC = 80% (VCES), VGE = 20V, L = 66µH, RG = 4.7tested in production ILM 400A.  Pulse width limited by max. junction temperature.  Refer to AN-1086 for guidelines for measuring V(BR)CES safely.  R is measured at TJ of approximately 90°C.  Values influenced by parasitic L and C in measurement.  Calculated continuous current based on maximum allowable junction temperature. Package IGBT current limit is 195A. Package diode current limit is 120A. Note that current limitations arising from heating of the device leads may occur. 2 www.infineon.com © 2019 Infineon Technologies AG September 20, 2019 IRGPS46160DPbF 220 For both: Duty cycle : 50% Tj = 175°C Tcase = 100°C Gate drive as specified Power Dissipation = 375W 200 Load Current ( A ) 180 160 Square Wave: 140 VCC 120 100 I 80 60 Diode as specified 40 20 0.1 1 10 100 f , Frequency ( kHz ) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 250 800 700 200 600 500 IC (A) Ptot (W) 150 100 400 300 200 50 100 0 0 25 50 75 100 125 150 175 0 20 40 60 80 100 120 140 160 180 T C (°C) T C (°C) Fig. 2 - Maximum DC Collector Current vs. Case Temperature Fig. 3 - Power Dissipation vs. Case Temperature 1000 1000 10µsec 100 100µsec IC A) IC (A) 100 10 1msec 10 1 Tc = 25°C Tj = 175°C Single Pulse DC 1 0.1 1 10 100 1000 10000 VCE (V) Fig. 4 - Forward SOA TC = 25°C, TJ 175°C; VGE =15V 3 www.infineon.com © 2019 Infineon Technologies AG 10 100 1000 VCE (V) Fig. 5 - Reverse Bias SOA TJ = 175°C; VGE =20V September 20, 2019 IRGPS46160DPbF 350 350 300 300 250 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 200 150 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 200 ICE (A) ICE (A) 250 150 100 100 50 50 0 0 0 1 2 3 4 5 6 7 8 9 0 10 2 4 Fig. 6 - Typ. IGBT Output Characteristics TJ = -40°C; tp = 80µs 350 Fig. 7 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 80µs -40°C 25°C 175°C 500 250 400 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 200 150 IF (A) ICE (A) 10 600 300 300 200 100 100 50 0 0 0 2 4 6 8 10 0.0 1.0 2.0 Fig. 8 - Typ. IGBT Output Characteristics TJ = 175°C; tp = 80µs 25 20 20 VCE (V) ICE = 6.0A ICE = 120A ICE = 195A 10 4.0 5.0 6.0 Fig. 9 - Typ. Diode Forward Characteristics tp = 80µs 25 15 3.0 VF (V) VCE (V) VCE (V) 8 VCE (V) VCE (V) 5 15 ICE = 6.0A ICE = 120A ICE = 195A 10 5 0 0 5 10 15 20 VGE (V) Fig. 10 - Typical VCE vs. VGE TJ = -40°C 4 6 www.infineon.com © 2019 Infineon Technologies AG 5 10 15 20 VGE (V) Fig. 11 - Typical VCE vs. VGE TJ = 25°C September 20, 2019 IRGPS46160DPbF 350 IC, Collector-to-Emitter Current (A) 25 VCE (V) 20 15 ICE = 6.0A ICE = 120A ICE = 195A 10 5 300 T J = -40°C T J = 25°C T J = 175°C 250 200 150 100 50 0 0 5 10 15 3 20 5 6 7 8 9 10 11 12 VGE, Gate-to-Emitter Voltage (V) VGE (V) Fig. 12 - Typical VCE vs. VGE TJ = 175°C Fig. 13 - Typ. Transfer Characteristics VCE = 50V; tp = 10µs 30000 1000 25000 Swiching Time (ns) tdOFF 20000 Energy (µJ) 4 EON 15000 10000 100 tdON tF EOFF 5000 tR 0 10 0 50 100 150 200 250 0 50 100 150 200 250 IC (A) IC (A) Fig. 14 - Typ. Energy Loss vs. IC TJ = 175°C; L = 66µH; VCE = 400V, RG = 4.7; VGE = 15V Fig. 15 - Typ. Switching Time vs. IC TJ = 175°C; L = 66µH; VCE = 400V, RG = 4.7; VGE = 15V 30000 10000 Swiching Time (ns) 25000 Energy (µJ) 20000 15000 EON 10000 tdOFF tR tdON 100 tF EOFF 5000 0 10 0 20 40 60 80 100 0 Fig. 16 - Typ. Energy Loss vs. RG TJ = 175°C; L = 66µH; VCE = 400V, ICE = 120A; VGE = 15V 20 40 60 80 100 RG () Rg () 5 1000 Fig. 17 - Typ. Switching Time vs. RG TJ = 175°C; L = 66µH; VCE = 400V, ICE = 120A; VGE = 15V www.infineon.com © 2019 Infineon Technologies AG September 20, 2019 IRGPS46160DPbF 40 40 RG = 4.7 35 35 IRR (A) IRR (A) RG = 10 RG = 20 30 RG = 50 25 30 25 20 20 0 50 100 150 200 250 0 10 20 IF (A) 30 40 50 RG ( Fig. 18 - Typ. Diode IRR vs. IF TJ = 175°C Fig. 19 - Typ. Diode IRR vs. RG TJ = 175°C 40 4500 4.7 4000 QRR (nC) IRR (A) 35 30 25 10 3500 240A 20 3000 2500 60A 50 2000 20 350 400 450 500 550 200 600 300 400 600 700 800 Fig. 21 - Typ. Diode QRR vs. diF/dt VCC = 400V; VGE = 15V; TJ = 175°C Fig. 20 - Typ. Diode IRR vs. diF/dt VCC = 400V; VGE = 15V; IF = 120A; TJ = 175°C 18 1000 700 16 900 14 800 12 700 10 600 8 500 6 400 4 300 Time (µs) 500 RG = 4.7 400 RG = 10 300 RG = 20 200 RG = 50 200 2 100 0 50 100 150 200 250 IF (A) Fig. 22 - Typ. Diode ERR vs. IF TJ = 175°C www.infineon.com © 2019 Infineon Technologies AG Current (A) 800 600 Energy (µJ) 500 diF /dt (A/µs) diF /dt (A/µs) 6 120A 8 10 12 14 16 VGE (V) Fig. 23 - VGE vs. Short Circuit Time VCC = 400V; TC = 25°C September 20, 2019 IRGPS46160DPbF 16 VGE, Gate-to-Emitter Voltage (V) Capacitance (pF) 100000 Cies 10000 1000 Coes V CES = 300V 14 V CES = 400V 12 10 8 6 4 2 Cres 0 100 0 20 40 60 80 100 0 50 VCE (V) 100 150 200 250 Q G, Total Gate Charge (nC) Fig. 25 - Typical Gate Charge vs. VGE ICE = 120A; L = 100µH Fig. 24 - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz Thermal Response ( Z thJC ) 1 0.1 D = 0.50 0.20 0.10 0.01 R1 R1 0.05 J 0.02 0.01 J 1 R2 R2 R3 R3 Ri (°C/W) i (sec) R4 R4 C  2 1 2 3 3 4 4 Ci= iRi Ci= iRi 0.001 1E-005 0.000167 0.01606 0.000167 0.06827 0.000873 0.06827 0.007828 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 0.04418 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 26. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) 1 Thermal Response ( Z thJC ) D = 0.50 0.1 0.20 0.10 0.05 0.01 0.02 0.01 J R1 R1 J 1 R2 R2 R3 R3 C  2 1 2 3 3 Ci= iRi Ci= iRi 0.001 SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 1E-005 Ri (°C/W) i (sec) R4 R4 4 4 0.00441 0.000008 0.22783 0.000836 0.27340 0.004982 0.12494 0.026498 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 27. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) 7 www.infineon.com © 2019 Infineon Technologies AG September 20, 2019 IRGPS46160DPbF L L DUT 80 V + VCC - 0 DUT 1K VCC Rg Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit diode clamp / DUT L 4X DC -5V VCC DUT / DRIVER DUT VCC Rg RSH Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit C force R= VCC ICM 100K D1 DUT Rg 22K C sense VCC G force DUT 0.0075µF E sense E force Fig.C.T.5 - Resistive Load Circuit 8 www.infineon.com © 2019 Infineon Technologies AG Fig.C.T.6 - BVCES Filter Circuit September 20, 2019 IRGPS46160DPbF 700 700 210 210 tr tf 600 600 180 180 150 400 120 400 120 300 90 90% ICE 200 60 10% ICE 100 60 10% test current 5% VCE 30 0 0 0 Eon Loss Eoff Loss -100 -200 -100 0 -100 -400 -300 -200 -100 0 -30 100 200 300 400 500 -30 100 200 300 400 time(ns) time (ns) Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 175°C using Fig. CT.4 Fig. WF2 - Typ. Turn-on Loss Waveform @ TJ = 175°C using Fig. CT.4 140 120 QRR 100 900 900 800 800 ICE 700 tRR 700 80 600 600 60 500 500 Vce (V) I F (A) 90 100 30 0 90% test current 300 40 20 0 -20 -40 -60 -200 10% Peak IRR Peak IRR 400 300 300 200 200 100 100 0 0 -100 0 200 400 time (ns) Fig. WF3 - Typ. Diode Recovery Waveform @ TJ = 175°C using Fig. CT.4 9 VCE 400 www.infineon.com © 2019 Infineon Technologies AG Ice (A) 5% V CE 200 V C E (V) 500 I CE (A) 150 VCE (V) 500 I C E (A) TEST CURRENT -100 -5 0 5 10 15 time (µs) Fig. WF4 - Typ. S.C. Waveform @ TJ = 25°C using Fig. CT.3 September 20, 2019 IRGPS46160DPbF Case Outline and Dimensions — Super-247 Super-247 (TO-274AA) Part Marking Information EXAMPLE: THIS IS AN IRFPS37N50A WITH ASSEMBLY LOT CODE 1789 ASSEMBLED ON WW 19, 1997 IN THE ASSEMBLY LINE "C" PART NUMBER INTERNATIONAL RECTIFIER LOGO IRFPS37N50A 719C 17 89 ASSEMBLY LOT CODE Note: "P" in assembly line position indicates "Lead-Free" DATE CODE YEAR 7 = 1997 WEEK 19 LINE C TOP Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.infineon.com © 2019 Infineon Technologies AG September 20, 2019 IRGPS46160DPbF † Qualification Information Industrial Qualification Level Moisture Sensitivity Level Human Body Model ESD Charged Device Model RoHS Compliant (per International Rectifier's internal guidelines) Super-247 N/A Class H3B ( 8000V ) AEC-Q101-001 Class C5 (1125V ) AEC-Q101-005 †† †† Yes † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability †† Highest passing voltage. Revision History Date 11/14/2014 09/20/2019 Comments Added note to IFM Diode Maximum Forward Current on page 1. Added note to switching losses test condition on page 2. Change of package dimensions IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 11 www.infineon.com © 2019 Infineon Technologies AG September 20, 2019