IRGR2B60KDPBF

IRGR2B60KDPbF   INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-FAST SOFT RECOVERY DIODE Features  Low VCE (ON) Non Punch Through IGBT technology  Low Diode VF  10µs Short Circuit Capability  Square RBSOA  Ultra-soft Diode Reverse Recovery Characteristics  Positive VCE (ON) temperature co-efficient  Lead-free  C   VCES = 600V IC = 3.7A, TC = 100°C TJ(MAX) = 150°C G VCE(ON) typ. = 1.95V E n-channel   C Benefits  Benchmark Efficiency for Motor Control  Rugged transient performance for increased reliability  Excellent current sharing in parallel operation  Low EMI E G D-Pak G Gate Base part number Package Type IRGR2B60KDPbF D-Pak Standard Pack Form Quantity Tube 75 Tape and Reel 2000 Tape and Reel Left 3000 Tape and Reel Right 3000 Absolute Maximum Ratings VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Parameter Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE = 15V  Clamped Inductive Load Current, VGE = 20V  Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current  Continuous Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. 1 www.irf.com Orderable Part Number IRGR2B60KDPbF IRGR2B60KDTRPbF IRGR2B60KDTRLPbF IRGR2B60KDTRRPbF   Max. 600 6.3 3.7 8.0 8.0 6.3 3.7 8.0 ±20 35 14 -55 to +150 © 2012 International Rectifier Units V A V W °C 300 (0.063 in.(1.6mm) from case)   Parameter (IGBT) Junction-to-Case (IGBT)  (Diode) Junction-to-Case (Diode)  Junction-to-Ambient (PCB Mount)  E Emitter   Thermal Resistance RθJC RθJC RθJA C Collector Min. ––– ––– –––   Typ. ––– ––– –––   Max. 3.56 7.70 50 Units °C/W January 8, 2013 IRGR2B60KDPbF   Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 600 — V(BR)CES Temperature Coeff. of Breakdown Voltage — 0.49 V(BR)CES/TJ VCE(on) Collector-to-Emitter Saturation Voltage — 1.95 — 2.28 Gate Threshold Voltage 4.0 — VGE(th) gfe Forward Transconductance — 1.2 ICES Collector-to-Emitter Leakage Current — 0.5 — 23     VFM Diode Forward Voltage Drop — 1.3 — 1.1 IGES Gate-to-Emitter Leakage Current — — Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Total Gate Charge (turn-on) — 8.0 Qg Qge Gate-to-Emitter Charge (turn-on) — 1.3 Gate-to-Collector Charge (turn-on) — 4.0 Qgc Turn-On Switching Loss — 74 Eon Eoff Turn-Off Switching Loss — 39 Total Switching Loss — 113 Etot td(on) Turn-On delay time — 11 tr Rise time — 8.7 Turn-Off delay time — 150 td(off) Fall time — 56 tf Turn-On Switching Loss — 120 Eon Eoff Turn-Off Switching Loss — 68 Total Switching Loss — 188 Etot td(on) Turn-On delay time — 13 tr Rise time — 6.8 td(off) Turn-Off delay time — 170 tf Fall time — 110 Input Capacitance — 110 Cies Output Capacitance — 17 Coes Reverse Transfer Capacitance — 4.0 Cres RBSOA Reverse Bias Safe Operating Area SCSOA Short Circuit Safe Operating Area 10 Erec trr Irr Reverse Recovery Energy of the Diode Diode Reverse Recovery Time Diode Peak Reverse Recovery Current — — — Max. Units — V — V/°C 2.25 V —   6.0 V — S 25 µA — 1.6 V — ±100 nA Conditions VGE = 0V, IC = 500µA  VGE = 0V, IC = 1mA (25°C-150°C) IC = 2.0A, VGE = 15V, TJ = 25°C IC = 2.0A, VGE = 15V, TJ = 150°C VCE = VGE, IC = 250µA VCE = 50V, IC = 2.0A, PW = 20µs VGE = 0V, VCE = 600V VGE = 0V, VCE = 600V, TJ = 150°C IF = 2.0A IF = 2.0A, TJ = 150°C VGE = ±20V Max. Units Conditions 12 IC = 2.0A nC  VGE = 15V 2.0 VCC = 400V 6.0   160 µJ IC = 2.0A, VCC = 400V, VGE = 15V 120 280   RG = 100, L = 7.1mH, TJ = 25°C Energy losses include tail & diode  30   ns  reverse recovery 25 170   75   — µJ IC = 2.0A, VCC =400V, VGE=15V — —   RG = 100, L = 7.1mH, TJ = 150°C Energy losses include tail & diode  —   ns  reverse recovery — —   —   — VGE = 0V pF VCC = 30V — f = 1.0Mhz — TJ = 150°C, IC = 8.0A FULL SQUARE VCC = 480V, Vp ≤ 600V Rg = 100, VGE = +20V to 0V — — µs TJ = 150°C, Vp ≤ 600V, Rg=330 VCC = 360V, VGE = +15V to 0V 19 30 µJ TJ = 150°C VCC = 400V, IF = 2.0A, L = 7.1mH 45 68 ns 5.8 8.7 A VGE = 15V, Rg = 100 Notes:  VCC = 80% (VCES), VGE = 20V, L = 200µH, RG = 100.  Pulse width limited by max. junction temperature.  Refer to AN-1086 for guidelines for measuring V(BR)CES safely.  R is measured at TJ of approximately 90°C.  FBSOA operating conditions only.  When mounted on 1” square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. 2 www.irf.com © 2012 International Rectifier January 8, 2013 IRGR2B60KDPbF   6 For both: Duty cycle : 50% Tj = 150°C Tcase = 100°C Gate drive as specified Power Dissipation = 14W Load Current ( A ) 5 Square Wave: 4 VCC 3 I 2 Diode as specified 1 0.1 1 10 100 f , Frequency ( kHz ) 7 35 6 30 5 25 4 20 Ptot (W) IC (A) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 3 15 2 10 1 5 0 0 25 50 75 100 125 25 150 50 75 100 125 150 T C (°C) T C (°C) Fig. 3 - Power Dissipation vs. Case Temperature Fig. 2 - Maximum DC Collector Current vs. Case Temperature 10 10 10µsec 1msec 100µsec IC (A) IC (A) 1 DC 0.1 Tc = 25°C Tj = 150°C Single Pulse 1 0.01 1 10 100 1000 VCE (V) Fig. 4 - Forward SOA TC = 25°C; TJ ≤ 150°C; VGE = 15V 3 www.irf.com © 2012 International Rectifier 10 100 1000 VCE (V) Fig. 5 - Reverse Bias SOA TJ = 150°C; VGE = 20V January 8, 2013 IRGR2B60KDPbF   10 10 8 ICE (A) 6 ICE (A) 8 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 4 2 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 6 4 2 0 0 0 2 4 6 8 10 0 2 4 VCE (V) 10 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 8 6 8 -40°C 25°C 150°C 6 IF (A) ICE (A) 10 Fig. 7 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 20µs 10 4 4 2 2 0 0 0 2 4 6 8 10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VF (V) VCE (V) Fig. 9 - Typ. Diode Forward Voltage Drop Characteristics Fig. 8 - Typ. IGBT Output Characteristics TJ = 150°C; tp = 20µs 10 10 8 8 ICE = 1.0A ICE = 2.0A 6 VCE (V) VCE (V) 8 VCE (V) Fig. 6 - Typ. IGBT Output Characteristics TJ = -40°C; tp = 20µs ICE = 4.0A 4 2 ICE = 1.0A ICE = 2.0A 6 ICE = 4.0A 4 2 0 0 5 10 15 20 VGE (V) Fig. 10 - Typical VCE vs. VGE TJ = -40°C 4 6 www.irf.com © 2012 International Rectifier 5 10 15 20 VGE (V) Fig. 11 - Typical VCE vs. VGE TJ = 25°C January 8, 2013 IRGR2B60KDPbF   10 12 10 ICE = 1.0A ICE = 2.0A 8 ICE = 4.0A 6 ICE (A) VCE (V) 8 4 6 T J = 25°C T J = 150°C 4 2 2 0 0 5 10 15 20 4 6 8 10 12 14 16 VGE (V) VGE (V) Fig. 12 - Typical VCE vs. VGE TJ = 150°C Fig. 13 - Typ. Transfer Characteristics VCE = 50V; tp = 20µs 250 1000 tdOFF 200 Swiching Time (ns) Energy (µJ) EON 150 100 EOFF 50 tF 100 tdON 10 tR 0 1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.5 1.0 1.5 2.0 IC (A) 2.5 3.0 3.5 4.0 IC (A) Fig. 14 - Typ. Energy Loss vs. IC TJ = 150°C; L = 7.1mH; VCE = 400V, RG = 100; VGE = 15V Fig. 15 - Typ. Switching Time vs. IC TJ = 150°C; L = 7.1mH; VCE = 400V, RG = 100; VGE = 15V 220 1000 tdOFF 200 Swiching Time (ns) Energy (µJ) 180 EON 160 140 120 EOFF 100 tF tdON 10 100 tR 80 60 1 0 100 200 300 400 500 0 100 200 300 400 500 RG () RG ( ) Fig. 16 - Typ. Energy Loss vs. RG TJ = 150°C; L = 7.1mH; VCE = 400V, ICE = 2.0A; VGE = 15V Fig. 17 - Typ. Switching Time vs. RG TJ = 150°C; L = 7.1mH; VCE = 400V, ICE = 2.0A; VGE = 15V 5 www.irf.com © 2012 International Rectifier January 8, 2013 IRGR2B60KDPbF   6.0 7.0 RG = 100 6.0 5.0 5.0 IRR (A) IRR (A) RG = 200 RG = 330 4.0 4.0 3.0 3.0 RG = 470 2.0 2.0 0.0 1.0 2.0 3.0 4.0 100 150 200 250 300 350 400 450 500 5.0 IF (A) RG ( Fig. 18 - Typical Diode IRR vs. IF TJ = 150°C Fig. 19 - Typical Diode IRR vs. RG TJ = 150°C; IF = 2.0A 6.0 350 4.0A 300 5.0 QRR (nC) IRR (A) 250 4.0 330 200 100 470 200 2.0A 150 3.0 1.0A 100 50 2.0 40 80 120 160 200 50 240 100 150 200 250 300 diF /dt (A/µs) diF /dt (A/µs) Fig. 20 - Typical Diode IRR vs. diF/dt VCC = 400V; VGE = 15V; IF = 2.0A; TJ = 150°C Fig. 21 - Typical Diode QRR VCC = 400V; VGE = 15V; TJ = 150°C 35 1000 RG = 100 30 Energy (µJ) Capacitance (pF) Cies 25 RG = 200 20 RG = 330 15 10 Coes 10 RG = 470 Cres 5 1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 IF (A) Fig. 22 - Typ. Diode ERR vs. IF TJ = 150°C 6 100 www.irf.com © 2012 International Rectifier 0 100 200 300 400 500 VCE (V) Fig. 23 - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz January 8, 2013 IRGR2B60KDPbF   VGE, Gate-to-Emitter Voltage (V) 16 14 V CES = 400V 12 V CES = 300V 10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 Q G, Total Gate Charge (nC) Fig. 23 - Typical Gate Charge vs. VGE ICE = 2.0A Thermal Response ( Z thJC ) 10 D = 0.50 1 0.20 R1 R1 0.10 J 0.05 J 1 0.02 0.1 R2 R2 R3 R3 R4 R4 C 2 1 3 2 4 3 4 Ci= iRi Ci= iRi 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.01 1E-006 C 1E-005 Ri (°C/W) i (sec) 0.073623 0.000004 1.265403 0.000072 1.345162 0.000715 0.877346 0.005046 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig. 24 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) 10 Thermal Response ( Z thJC ) D = 0.50 0.20 1 0.10 0.05 J 0.02 J 1 R2 R2 R3 R3 R4 R4 C 2 1 2 3 4 3 Ci= iRi Ci= iRi 0.01 0.1 R1 R1 1E-005 0.0001 i (sec) 0.510125 0.000051 2.282292 0.000119 3.175748 0.001799 1.735309 0.014349 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.01 1E-006 4 C Ri (°C/W) 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 25 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) 7 www.irf.com © 2012 International Rectifier January 8, 2013 IRGR2B60KDPbF   L L 0 80 V + VCC DUT - DUT 1K VCC Rg Fig.C.T.2 - RBSOA Circuit Fig.C.T.1 - Gate Charge Circuit (turn-off) diode clamp / DUT L 4X DC VCC -5V DUT / DRIVER DUT VCC Rg RSH Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit R = VCC ICM DUT VCC Rg Fig. C.T.5 - Resistive Load Circuit 8 www.irf.com © 2012 International Rectifier January 8, 2013 IRGR2B60KDPbF   500 500 10 10 tr tf 8 400 300 6 300 90% ICE 100 5% VCE 4 90% ICE 2 100 0 0 2 10% ICE 5% ICE 0 Eoff Loss -100 -1.5 200 -0.5 0.5 1.5 0 Eon Loss -0.3 2.5 -0.1 Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 150°C using Fig. CT.4 0.5 500 50 QRR 1 0 Vce (V) -1 -2 10% Peak IRR Peak IRR VCE 400 tRR 40 300 30 200 20 ICE 100 -5 Ice (A) 2 IF (A) -2 0.3 Fig. WF2 - Typ. Turn-on Loss Waveform @ TJ = 150°C using Fig. CT.4 3 -4 0.1 time (µs) time(µs) -3 5% VCE -100 -2 ICE (A) 4 6 VCE (V) 200 8 TEST CURRENT ICE (A) VCE (V) 400 10 0 0 -6 -7 -0.10 -100 0.00 0.10 0.20 time (µs) Fig. WF3 - Typ. Diode Recovery Waveform @ TJ = 150°C using Fig. CT.4 9 www.irf.com © 2012 International Rectifier -10 -5 0 5 10 15 time (µs) Fig. WF4 - Typ. S.C. Waveform @ TJ = 150°C using Fig. CT.3 January 8, 2013 IRGR2B60KDPbF   D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com © 2012 International Rectifier January 8, 2013 IRGR2B60KDPbF   D-Pak (TO-252AA) Tape and Reel Information Dimensions are shown in millimeters (inches) TR TRR TRL 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 11 www.irf.com © 2012 International Rectifier January 8, 2013 IRGR2B60KDPbF   Qualification Information† Industrial† Qualification Level D-Pak Moisture Sensitivity Level MSL1 Yes RoHS Compliant † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ †† Applicable version of JEDEC standard at the time of product release. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 12 www.irf.com © 2012 International Rectifier January 8, 2013