IRGR4045DPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
C
VCES = 600V
Features
IC 6.0A, TC = 100°C
Low VCE (on) Trench IGBT Technology
Low Switching Losses
Maximum Junction temperature 175 °C
5μs SCSOA
Square RBSOA
100% of the parts tested for ILM
Positive VCE (on) Temperature Coefficient.
Ultra Fast Soft Recovery Co-pak Diode
Tighter Distribution of Parameters
Lead-Free, RoHS Compliant
Tjmax = 175°C
G
VCE(on) typ. 1.7V
E
n-channel
C
E
Benefits
G
High Efficiency in a Wide Range of Applications
Suitable for a Wide Range of Switching Frequencies due
to Low VCE (ON) and Low Switching Losses
Rugged Transient Performance for Increased Reliability
Excellent Current Sharing in Parallel Operation
Low EMI
D-Pak
IRGR4045DPbF
G
Gate
C
Colletor
E
Emitter
Absolute Maximum Ratings
Parameter
VCES
Collector-to-Emitter Breakdown Voltage
IC@ TC = 25°C
IC@ TC = 100°C
ICM
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current, VGE = 15V
ILM
IF@TC=25°C
IF@TC=100°C
IFM
Clamped Inductive Load Current, VGE = 20V
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
VGE
PD @ TC =25°
PD @ TC =100°
TJ
TSTG
Units
Max.
600
12
V
6.0
18
24
c
A
8.0
4.0
24
d
± 20
± 30
77
39
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
V
W
°C
-55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (0.063 in. (1.6mm) from case)
Thermal Resistance
Parameter
R JC
R JC
R JA
R JA
e
e
Junction-to-Case - IGBT
Junction-to-Case - Diode
Junction-to-Ambient (PCB Mount)
Junction-to-Ambient
g
Min.
Typ.
Max.
–––
–––
1.9
–––
–––
–––
–––
–––
–––
6.8
50
110
Units
°C/W
*Qualification standards can be found at http://www.irf.com/
1
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October 10, 2012
IRGR4045DPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)CES
Collector-to-Emitter BreakdownVoltage
V(BR)CE S/T J
Min. Typ. Max. Units
600
—
—
T emperature Coeff. of B reakdown Voltage
—
0.36
—
—
1.7
2.0
VCE(on)
Collector-to-Emitter Saturation Voltage
—
2.07
—
—
2.14
—
VGE(th)
Gate Threshold Voltage
3.5
—
6.5
VGE (th)/T J
Threshold Voltage temp. coefficient
—
-13
—
gfe
Forward Transconductance
—
5.8
—
S
—
—
25
μA
—
—
250
—
1.60
2.30
—
1.30
—
—
—
±100
ICES
VFM
IGES
Collector-to-Emitter Leakage Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
V
Conditions
V GE = 0V, Ic =100 μA
f
o
V/°C V GE = 0V, Ic = 250μA ( 25 -175 C )
V
IC = 6.0A, V GE = 15V, TJ = 25°C
IC = 6.0A, V GE = 15V, TJ = 150°C
V
IC = 6.0A, V GE = 15V, TJ = 175°C
V CE = V GE, IC = 150μA
R ef . F i g
f
CT 6
5,6,7,9,
10 ,11
9,10,11,12
o
mV/°C V CE = V GE, IC = 250μA ( 25 -175 C )
V CE = 25V, IC = 6.0A, PW =80s
V GE = 0V,V CE = 600V
V GE = 0V, V CE = 600V, TJ =175°C
V
IF = 6.0A
nA
IF = 6.0A, TJ = 175°C
V GE = ± 20 V
8
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Qg
Total Gate Charge (turn-on)
Qge
Gate-to-Emitter Charge (turn-on)
Qgc
Gate-to-Collector Charge (turn-on)
h Units
Min. Typ. Max.
—
13
19.5
—
3.1
4.65
—
6.4
9.6
Eon
Turn-On Switching Loss
—
56
86
Eoff
Turn-Off Switching Loss
—
122
143
Etotal
Total Switching Loss
—
178
229
td(on)
Turn-On delay time
—
27
35
tr
Rise time
—
11
15
td(off)
Turn-Off delay time
—
75
93
tf
Fall time
—
17
22
Eon
Turn-On Switching Loss
—
140
—
Eoff
Turn-Off Switching Loss
—
189
—
Etotal
Total Switching Loss
—
329
—
td(on)
Turn-On delay time
—
26
—
tr
Rise time
—
12
—
td(off)
Turn-Off delay time
—
95
—
tf
Fall time
—
32
—
Cies
Input Capacitance
—
350
—
Coes
Output Capacitance
—
29
—
Cres
Reverse Transfer Capacitance
—
10
—
nC
Conditions
IC = 6.0A
24
VCC = 400V
CT 1
VGE = 15V
IC = 6.0A, VCC = 400V, VGE = 15V
μJ
RG = 47, L=1mH, LS = 150nH, TJ = 25°C
Reverse Bias Safe Operating Area
CT 4
E nergy los s es include tail and diode revers e recovery
IC = 6.0A, VCC = 400V
ns
RG = 47, L=1mH, LS = 150nH
CT 4
TJ = 25°C
IC = 6.0A, VCC = 400V, VGE = 15V
μJ
13,15
RG = 47, L=1mH, LS = 150nH, TJ = 175°C
E nergy los s es include tail and diode revers e recovery
IC = 6.0A, VCC = 400V
ns
RG = 47, L=1mH, LS = 150nH
TJ = 175°C
VGE = 0V
pF
CT 4
WF 1,WF 2
14,16
CT 4
WF 1,WF 2
23
VCC = 30V
f = 1Mhz
TJ = 175°C, IC = 24A
RBSOA
R ef . F i g
FULL SQUARE
VCC = 500V, Vp =600V
4
CT 2
RG = 100, VGE = +20V to 0V
VCC = 400V, Vp =600V
22
SCSOA
Short Circuit Safe Operating Area
—
5
—
μs
Erec
Reverse recovery energy of the diode
—
178
—
μJ
TJ = 175 C
trr
Diode Reverse recovery time
—
74
—
ns
VCC = 400V, IF = 6.0A
20,21
Irr
Peak Reverse Recovery Current
—
12
—
A
VGE = 15V, Rg = 47, L=1mH, LS=150nH
WF 3
RG = 100, VGE = +15V to 0V
o
CT 3, WF 4
17,18,19
Notes:
VCC = 80% (VCES ), VGE = 15V, L = 1.0mH, RG = 47
Pulse width limited by max. junction temperature.
R is measured at T J approximately 90°C.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994.
Maximum limits are based on statistical sample size characterization.
2
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IRGR4045DPbF
14
80
12
70
60
10
50
Ptot (W)
IC (A)
8
6
40
30
4
20
2
10
0
0
0
20
40
60
80 100 120 140 160 180
0
20
40
60
80 100 120 140 160 180
T C (°C)
T C (°C)
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
Fig. 2 - Power Dissipation vs. Case
Temperature
100
100
10μsec
10
10
IC A)
IC (A)
100μsec
DC
1
1
Tc = 25°C
Tj = 175°C
Single Pulse
0
0.1
1
10
100
10
1000
100
VCE (V)
VCE (V)
Fig. 4 - Reverse Bias SOA
TJ = 175°C, VGE = 20V
Fig. 3 - Forward SOA,
TC = 25°C, TJ 175°C, VGE = 15V
20
20
Top
V
= 18V
GE
V
= 15V
GE
VGE = 12V
15
V
= 10V
GE
Bottom VGE = 8.0V
10
ICE (A)
ICE (A)
15
5
Top
Bottom
10
V
= 18V
GE
V
= 15V
GE
V
= 12V
GE
V
= 10V
GE
V
= 8.0V
GE
5
0
0
0
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1000
2
4
6
8
10
0
2
4
6
8
10
VCE (V)
VCE (V)
Fig. 5 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80μs
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80μs
3
IRGR4045DPbF
20
Top
Bottom
18
16
-40°C
25°C
175°C
14
12
IF (A)
ICE (A)
15
20
V
= 18V
GE
V
= 15V
GE
V
= 12V
GE
V
= 10V
GE
V
= 8.0V
GE
10
10
8
6
5
4
2
0
0
0
2
4
6
8
10
0.0
1.0
2.0
VF (V)
VCE (V)
Fig. 8 - Typ. Diode Forward Characteristics
tp = 80μs
10
10
8
8
ICE = 3.0A
VCE (V)
VCE (V)
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 175°C; tp = 80μs
6
ICE = 6.0A
ICE = 12A
4
2
6
ICE = 3.0A
ICE = 6.0A
ICE = 12A
4
2
0
0
5
10
15
20
5
10
VGE (V)
20
Fig. 10 - Typical VCE vs. VGE
TJ = 25°C
20
IC, Collector-to-Emitter Current (A)
10
8
VCE (V)
15
VGE (V)
Fig. 9 - Typical VCE vs. VGE
TJ = -40°C
ICE = 3.0A
ICE = 6.0A
6
ICE = 12A
4
2
18
T J = 25°C
T J = 175°C
16
14
12
10
8
6
4
2
0
0
5
10
15
VGE (V)
Fig. 11 - Typical VCE vs. VGE
TJ = 175°C
4
3.0
20
4
6
8
10
12
14
16
VGE, Gate-to-Emitter Voltage (V)
Fig. 12 - Typ. Transfer Characteristics
VCE = 50V; tp = 10μs
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IRGR4045DPbF
400
1000
350
Swiching Time (ns)
Energy (μJ)
300
250
200
EOFF
150
tdOFF
100
tF
tdON
10
tR
EON
100
50
1
0
2
4
6
8
10
12
14
2
4
8
10
12
14
IC (A)
IC (A)
Fig. 14 - Typ. Switching Time vs. IC
TJ = 175°C; L=1mH; VCE= 400V
RG= 47; VGE= 15V
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 1mH; VCE = 400V, RG = 47; VGE = 15V.
220
1000
200
EOFF
Swiching Time (ns)
180
Energy (μJ)
6
160
EON
140
120
tdOFF
100
tF
tdON
10
tR
100
80
60
1
0
25
50
75
100
125
0
25
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 1mH; VCE = 400V, ICE = 6.0A; VGE = 15V
100
125
Fig. 16- Typ. Switching Time vs. RG
TJ = 175°C; L=1mH; VCE= 400V
ICE= 6.0A; VGE= 15V
22
30
20
25
RG = 10
18
20
16
15
IRR (A)
IRR (A)
75
RG ()
Rg ()
RG = 22
10
RG = 47
5
RG = 100
14
12
10
8
6
0
2
4
6
8
10
12
IF (A)
Fig. 17 - Typical Diode IRR vs. IF
TJ = 175°C
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50
14
0
25
50
75
100
125
RG (
Fig. 18 - Typical Diode IRR vs. RG
TJ = 175°C; IF = 6.0A
5
IRGR4045DPbF
1200
20
18
1000
12A
10
QRR (nC)
IRR (A)
16
14
12
22
800
47
6.0A
600
10
100
400
3.0A
8
200
6
0
200
400
600
800
1000
0
1200
500
1500
diF /dt (A/μs)
diF /dt (A/μs)
Fig. 20 - Typical Diode QRR
VCC= 400V; VGE= 15V; TJ = 175°C
Fig. 19- Typical Diode IRR vs. diF/dt
VCC= 400V; VGE= 15V;
ICE= 6.0A; TJ = 175°C
50
20
350
300
40
Time (μs)
RG = 47
10
30
5
20
Current (A)
Isc
RG = 22
200
Tsc
15
RG = 10
250
Energy (μJ)
1000
150
RG = 100
100
10
0
50
2
4
6
8
10
12
8
14
10
12
IF (A)
18
Fig. 22- Typ. VGE vs. Short Circuit Time
VCC=400V, TC =25°C
1000
16
VGE, Gate-to-Emitter Voltage (V)
Cies
Capacitance (pF)
16
VGE (V)
Fig. 21 - Typical Diode ERR vs. IF
TJ = 175°C
100
Coes
10
Cres
1
V CES = 400V
14
V CES = 300V
12
10
8
6
4
2
0
0
100
200
300
400
VCE (V)
Fig. 23- Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
6
14
500
0
2
4
6
8
10
12
14
Q G, Total Gate Charge (nC)
Fig. 24 - Typical Gate Charge vs. VGE
ICE = 6.0A, L=600μH
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IRGR4045DPbF
Thermal Response ( Z thJC )
10
1
D = 0.50
0.20
0.10
0.05
0.1
J
0.02
0.01
R1
R1
J
1
R3
R3
Ri (°C/W) i (sec)
R4
R4
C
2
1
2
3
3
4
4
Ci= iRi
Ci iRi
SINGLE PULSE
( THERMAL RESPONSE )
0.01
R2
R2
0.0301
0.000004
0.7200
0.000067
0.7005
0.000898
0.4479
0.005416
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
10
Thermal Response ( Z thJC )
D = 0.50
0.20
1
0.10
0.05
J
0.02
0.1
0.01
R1
R1
J
1
R2
R2
R3
R3
C
2
1
2
3
3
Ci= iRi
Ci iRi
SINGLE PULSE
( THERMAL RESPONSE )
0.01
1E-006
1E-005
0.0001
Ri (°C/W) i (sec)
R4
R4
4
4
0.2056
0.000019
1.4132
0.000095
3.3583
0.001204
1.8245
0.009127
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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7
IRGR4045DPbF
L
L
DUT
0
1K
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.3 - S.C.SOA Circuit
Fig.C.T.5 - Resistive Load Circuit
8
VCC
80 V
+
-
DUT
Rg
480V
Fig.C.T.2 - RBSOA Circuit
Fig.C.T.4 - Switching Loss Circuit
Fig.C.T.6 - Typical Filter Circuit for
V(BR)CES Measurement
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IRGR4045DPbF
600
12
600
500
10
500
400
8
400
6
300
90% ICE
200
4
5% ICE
100
VCE (V)
VCE (V)
tf
300
30
25
tr
TEST
CURRENT
90% test
current
2
100
0
0
-2
-100
10
10% test
current
0
0.2
0.4
0.6
0.8
0
Fig. WF1 - Typ. Turn-off Loss Waveform
@ TJ = 175°C using Fig. CT.4
100
t RR
-5
-400
-10
-500
-15
-20
0.05
0.15
0.25
time (µS)
WF.3- Typ. Diode Recovery Waveform
@ TJ = 175°C using CT.4
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Vce (V)
VF (V)
10%
Peak
IRR
Peak
IRR
-600
-0.05
450
5
0
80
500
10
QRR
-200
-300
4.7
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4
15
-100
4.5
-5
time (µs)
time(µs)
0
Eon Loss
4.3
1
5
5% VCE
Eoff Loss
-100
-0.2
15
200
5% VCE
0
20
VCE
70
400
60
350
50
300
40
250
200
ICE
30
20
150
10
100
0
50
-10
0
-20
-2 -1 0 1 2 3 4 5 6 7 8
Time (uS)
WF.4- Typ. Short Circuit Waveform
@ TJ = 25°C using CT.3
9
IRGR4045DPbF
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
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