IRGR4045DTRRPBF

IRGR4045DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features           IC  6.0A, TC = 100°C Low VCE (on) Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5μs SCSOA Square RBSOA 100% of the parts tested for ILM Positive VCE (on) Temperature Coefficient. Ultra Fast Soft Recovery Co-pak Diode Tighter Distribution of Parameters Lead-Free, RoHS Compliant Tjmax = 175°C G VCE(on) typ.  1.7V E n-channel C E Benefits G  High Efficiency in a Wide Range of Applications  Suitable for a Wide Range of Switching Frequencies due to Low VCE (ON) and Low Switching Losses  Rugged Transient Performance for Increased Reliability  Excellent Current Sharing in Parallel Operation  Low EMI D-Pak IRGR4045DPbF G Gate C Colletor E Emitter Absolute Maximum Ratings Parameter VCES Collector-to-Emitter Breakdown Voltage IC@ TC = 25°C IC@ TC = 100°C ICM Continuous Collector Current Continuous Collector Current Pulsed Collector Current, VGE = 15V ILM IF@TC=25°C IF@TC=100°C IFM Clamped Inductive Load Current, VGE = 20V Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current VGE PD @ TC =25° PD @ TC =100° TJ TSTG Units Max. 600 12 V 6.0 18 24 c A 8.0 4.0 24 d ± 20 ± 30 77 39 Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and V W °C -55 to + 175 Storage Temperature Range Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case) Thermal Resistance Parameter R JC R JC R JA R JA e e Junction-to-Case - IGBT Junction-to-Case - Diode Junction-to-Ambient (PCB Mount) Junction-to-Ambient g Min. Typ. Max. ––– ––– 1.9 ––– ––– ––– ––– ––– ––– 6.8 50 110 Units °C/W *Qualification standards can be found at http://www.irf.com/ 1 www.irf.com October 10, 2012 IRGR4045DPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)CES Collector-to-Emitter BreakdownVoltage V(BR)CE S/T J Min. Typ. Max. Units 600 — — T emperature Coeff. of B reakdown Voltage — 0.36 — — 1.7 2.0 VCE(on) Collector-to-Emitter Saturation Voltage — 2.07 — — 2.14 — VGE(th) Gate Threshold Voltage 3.5 — 6.5 VGE (th)/T J Threshold Voltage temp. coefficient — -13 — gfe Forward Transconductance — 5.8 — S — — 25 μA — — 250 — 1.60 2.30 — 1.30 — — — ±100 ICES VFM IGES Collector-to-Emitter Leakage Current Diode Forward Voltage Drop Gate-to-Emitter Leakage Current V Conditions V GE = 0V, Ic =100 μA f o V/°C V GE = 0V, Ic = 250μA ( 25 -175 C ) V IC = 6.0A, V GE = 15V, TJ = 25°C IC = 6.0A, V GE = 15V, TJ = 150°C V IC = 6.0A, V GE = 15V, TJ = 175°C V CE = V GE, IC = 150μA R ef . F i g f CT 6 5,6,7,9, 10 ,11 9,10,11,12 o mV/°C V CE = V GE, IC = 250μA ( 25 -175 C ) V CE = 25V, IC = 6.0A, PW =80s V GE = 0V,V CE = 600V V GE = 0V, V CE = 600V, TJ =175°C V IF = 6.0A nA IF = 6.0A, TJ = 175°C V GE = ± 20 V 8 Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Qg Total Gate Charge (turn-on) Qge Gate-to-Emitter Charge (turn-on) Qgc Gate-to-Collector Charge (turn-on) h Units Min. Typ. Max. — 13 19.5 — 3.1 4.65 — 6.4 9.6 Eon Turn-On Switching Loss — 56 86 Eoff Turn-Off Switching Loss — 122 143 Etotal Total Switching Loss — 178 229 td(on) Turn-On delay time — 27 35 tr Rise time — 11 15 td(off) Turn-Off delay time — 75 93 tf Fall time — 17 22 Eon Turn-On Switching Loss — 140 — Eoff Turn-Off Switching Loss — 189 — Etotal Total Switching Loss — 329 — td(on) Turn-On delay time — 26 — tr Rise time — 12 — td(off) Turn-Off delay time — 95 — tf Fall time — 32 — Cies Input Capacitance — 350 — Coes Output Capacitance — 29 — Cres Reverse Transfer Capacitance — 10 — nC Conditions IC = 6.0A 24 VCC = 400V CT 1 VGE = 15V IC = 6.0A, VCC = 400V, VGE = 15V μJ RG = 47, L=1mH, LS = 150nH, TJ = 25°C Reverse Bias Safe Operating Area CT 4 E nergy los s es include tail and diode revers e recovery IC = 6.0A, VCC = 400V ns RG = 47, L=1mH, LS = 150nH CT 4 TJ = 25°C IC = 6.0A, VCC = 400V, VGE = 15V μJ 13,15 RG = 47, L=1mH, LS = 150nH, TJ = 175°C E nergy los s es include tail and diode revers e recovery IC = 6.0A, VCC = 400V ns RG = 47, L=1mH, LS = 150nH TJ = 175°C VGE = 0V pF CT 4 WF 1,WF 2 14,16 CT 4 WF 1,WF 2 23 VCC = 30V f = 1Mhz TJ = 175°C, IC = 24A RBSOA R ef . F i g FULL SQUARE VCC = 500V, Vp =600V 4 CT 2 RG = 100, VGE = +20V to 0V VCC = 400V, Vp =600V 22 SCSOA Short Circuit Safe Operating Area — 5 — μs Erec Reverse recovery energy of the diode — 178 — μJ TJ = 175 C trr Diode Reverse recovery time — 74 — ns VCC = 400V, IF = 6.0A 20,21 Irr Peak Reverse Recovery Current — 12 — A VGE = 15V, Rg = 47, L=1mH, LS=150nH WF 3 RG = 100, VGE = +15V to 0V o CT 3, WF 4 17,18,19 Notes:  ‚ ƒ „ … † VCC = 80% (VCES ), VGE = 15V, L = 1.0mH, RG = 47 Pulse width limited by max. junction temperature. R is measured at T J approximately 90°C. Refer to AN-1086 for guidelines for measuring V(BR)CES safely. When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. Maximum limits are based on statistical sample size characterization. 2 www.irf.com IRGR4045DPbF 14 80 12 70 60 10 50 Ptot (W) IC (A) 8 6 40 30 4 20 2 10 0 0 0 20 40 60 80 100 120 140 160 180 0 20 40 60 80 100 120 140 160 180 T C (°C) T C (°C) Fig. 1 - Maximum DC Collector Current vs. Case Temperature Fig. 2 - Power Dissipation vs. Case Temperature 100 100 10μsec 10 10 IC A) IC (A) 100μsec DC 1 1 Tc = 25°C Tj = 175°C Single Pulse 0 0.1 1 10 100 10 1000 100 VCE (V) VCE (V) Fig. 4 - Reverse Bias SOA TJ = 175°C, VGE = 20V Fig. 3 - Forward SOA, TC = 25°C, TJ  175°C, VGE = 15V 20 20 Top V = 18V GE V = 15V GE VGE = 12V 15 V = 10V GE Bottom VGE = 8.0V 10 ICE (A) ICE (A) 15 5 Top Bottom 10 V = 18V GE V = 15V GE V = 12V GE V = 10V GE V = 8.0V GE 5 0 0 0 www.irf.com 1000 2 4 6 8 10 0 2 4 6 8 10 VCE (V) VCE (V) Fig. 5 - Typ. IGBT Output Characteristics TJ = -40°C; tp = 80μs Fig. 6 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 80μs 3 IRGR4045DPbF 20 Top Bottom 18 16 -40°C 25°C 175°C 14 12 IF (A) ICE (A) 15 20 V = 18V GE V = 15V GE V = 12V GE V = 10V GE V = 8.0V GE 10 10 8 6 5 4 2 0 0 0 2 4 6 8 10 0.0 1.0 2.0 VF (V) VCE (V) Fig. 8 - Typ. Diode Forward Characteristics tp = 80μs 10 10 8 8 ICE = 3.0A VCE (V) VCE (V) Fig. 7 - Typ. IGBT Output Characteristics TJ = 175°C; tp = 80μs 6 ICE = 6.0A ICE = 12A 4 2 6 ICE = 3.0A ICE = 6.0A ICE = 12A 4 2 0 0 5 10 15 20 5 10 VGE (V) 20 Fig. 10 - Typical VCE vs. VGE TJ = 25°C 20 IC, Collector-to-Emitter Current (A) 10 8 VCE (V) 15 VGE (V) Fig. 9 - Typical VCE vs. VGE TJ = -40°C ICE = 3.0A ICE = 6.0A 6 ICE = 12A 4 2 18 T J = 25°C T J = 175°C 16 14 12 10 8 6 4 2 0 0 5 10 15 VGE (V) Fig. 11 - Typical VCE vs. VGE TJ = 175°C 4 3.0 20 4 6 8 10 12 14 16 VGE, Gate-to-Emitter Voltage (V) Fig. 12 - Typ. Transfer Characteristics VCE = 50V; tp = 10μs www.irf.com IRGR4045DPbF 400 1000 350 Swiching Time (ns) Energy (μJ) 300 250 200 EOFF 150 tdOFF 100 tF tdON 10 tR EON 100 50 1 0 2 4 6 8 10 12 14 2 4 8 10 12 14 IC (A) IC (A) Fig. 14 - Typ. Switching Time vs. IC TJ = 175°C; L=1mH; VCE= 400V RG= 47; VGE= 15V Fig. 13 - Typ. Energy Loss vs. IC TJ = 175°C; L = 1mH; VCE = 400V, RG = 47; VGE = 15V. 220 1000 200 EOFF Swiching Time (ns) 180 Energy (μJ) 6 160 EON 140 120 tdOFF 100 tF tdON 10 tR 100 80 60 1 0 25 50 75 100 125 0 25 Fig. 15 - Typ. Energy Loss vs. RG TJ = 175°C; L = 1mH; VCE = 400V, ICE = 6.0A; VGE = 15V 100 125 Fig. 16- Typ. Switching Time vs. RG TJ = 175°C; L=1mH; VCE= 400V ICE= 6.0A; VGE= 15V 22 30 20 25 RG = 10 18 20 16 15 IRR (A) IRR (A) 75 RG () Rg () RG = 22 10 RG = 47 5 RG = 100 14 12 10 8 6 0 2 4 6 8 10 12 IF (A) Fig. 17 - Typical Diode IRR vs. IF TJ = 175°C www.irf.com 50 14 0 25 50 75 100 125 RG ( Fig. 18 - Typical Diode IRR vs. RG TJ = 175°C; IF = 6.0A 5 IRGR4045DPbF 1200 20 18 1000 12A 10 QRR (nC) IRR (A) 16 14 12 22 800 47 6.0A 600 10 100 400 3.0A 8 200 6 0 200 400 600 800 1000 0 1200 500 1500 diF /dt (A/μs) diF /dt (A/μs) Fig. 20 - Typical Diode QRR VCC= 400V; VGE= 15V; TJ = 175°C Fig. 19- Typical Diode IRR vs. diF/dt VCC= 400V; VGE= 15V; ICE= 6.0A; TJ = 175°C 50 20 350 300 40 Time (μs) RG = 47 10 30 5 20 Current (A) Isc RG = 22 200 Tsc 15 RG = 10 250 Energy (μJ) 1000 150 RG = 100 100 10 0 50 2 4 6 8 10 12 8 14 10 12 IF (A) 18 Fig. 22- Typ. VGE vs. Short Circuit Time VCC=400V, TC =25°C 1000 16 VGE, Gate-to-Emitter Voltage (V) Cies Capacitance (pF) 16 VGE (V) Fig. 21 - Typical Diode ERR vs. IF TJ = 175°C 100 Coes 10 Cres 1 V CES = 400V 14 V CES = 300V 12 10 8 6 4 2 0 0 100 200 300 400 VCE (V) Fig. 23- Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz 6 14 500 0 2 4 6 8 10 12 14 Q G, Total Gate Charge (nC) Fig. 24 - Typical Gate Charge vs. VGE ICE = 6.0A, L=600μH www.irf.com IRGR4045DPbF Thermal Response ( Z thJC ) 10 1 D = 0.50 0.20 0.10 0.05 0.1 J 0.02 0.01 R1 R1 J 1 R3 R3 Ri (°C/W) i (sec) R4 R4 C  2 1 2 3 3 4 4 Ci= iRi Ci iRi SINGLE PULSE ( THERMAL RESPONSE ) 0.01 R2 R2 0.0301 0.000004 0.7200 0.000067 0.7005 0.000898 0.4479 0.005416 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) 10 Thermal Response ( Z thJC ) D = 0.50 0.20 1 0.10 0.05 J 0.02 0.1 0.01 R1 R1 J 1 R2 R2 R3 R3 C  2 1 2 3 3 Ci= iRi Ci iRi SINGLE PULSE ( THERMAL RESPONSE ) 0.01 1E-006 1E-005 0.0001 Ri (°C/W) i (sec) R4 R4 4 4 0.2056 0.000019 1.4132 0.000095 3.3583 0.001204 1.8245 0.009127 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) www.irf.com 7 IRGR4045DPbF L L DUT 0 1K Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.3 - S.C.SOA Circuit Fig.C.T.5 - Resistive Load Circuit 8 VCC 80 V + - DUT Rg 480V Fig.C.T.2 - RBSOA Circuit Fig.C.T.4 - Switching Loss Circuit Fig.C.T.6 - Typical Filter Circuit for V(BR)CES Measurement www.irf.com IRGR4045DPbF 600 12 600 500 10 500 400 8 400 6 300 90% ICE 200 4 5% ICE 100 VCE (V) VCE (V) tf 300 30 25 tr TEST CURRENT 90% test current 2 100 0 0 -2 -100 10 10% test current 0 0.2 0.4 0.6 0.8 0 Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 175°C using Fig. CT.4 100 t RR -5 -400 -10 -500 -15 -20 0.05 0.15 0.25 time (µS) WF.3- Typ. Diode Recovery Waveform @ TJ = 175°C using CT.4 www.irf.com Vce (V) VF (V) 10% Peak IRR Peak IRR -600 -0.05 450 5 0 80 500 10 QRR -200 -300 4.7 Fig. WF2 - Typ. Turn-on Loss Waveform @ TJ = 175°C using Fig. CT.4 15 -100 4.5 -5 time (µs) time(µs) 0 Eon Loss 4.3 1 5 5% VCE Eoff Loss -100 -0.2 15 200 5% VCE 0 20 VCE 70 400 60 350 50 300 40 250 200 ICE 30 20 150 10 100 0 50 -10 0 -20 -2 -1 0 1 2 3 4 5 6 7 8 Time (uS) WF.4- Typ. Short Circuit Waveform @ TJ = 25°C using CT.3 9 IRGR4045DPbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information 1RWHV7KLVSDUWPDUNLQJLQIRUPDWLRQDSSOLHVWRGHYLFHVSURGXFHGEHIRUH (;$03/( 7+,6,6$1,5)5 :,7+$66(0%/< /27&2'(83 ,17(51$7,21$/ 5(&7,),(5 /2*2 ,5)8  8 3 '$7(&2'(