IRGS4045DTRLPBF

IRGS4045DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C IC  6.0A, TC = 100°C tsc > 5µs, Tjmax = 175°C C E G VCE(on) typ.  1.7V G D2-Pak IRGS4045DPbF E n-channel Applications  Appliance Motor Drive  Inverters  SMPS G Gate Low VCE(ON) and switching losses Square RBSOA and maximum junction temperature 175°C Positive V CE(ON) temperature coefficient and tighter distribution of parameters 5μs short circuit SOA Ultra fast soft recovery copak diode Lead-free, RoHS compliant IRGS4045DPbF E Emitter  Features Base part number C Colletor Package Type Benefits High efficiency in a wide range of applications and switching frequencies Improved reliability due to rugged hard switching performance and higher power capability Excellent current sharing in parallel operation Enables short circuit protection scheme Performance optimized for motor drive operation Environmentally friendly Standard Pack Form Tube Tape and Reel Left Tape and Reel Right D2Pak Orderable Part Number Quantity 50 800 800 IRGS4045DPbF IRGS4045DTRLPbF IRGS4045DTRRPbF Absolute Maximum Ratings VCES I C@ TC = 25°C I C@ TC = 100°C I CM I LM I F@TC=25°C I F@TC=100°C I FM VGE PD @ TC =25° PD @ TC =100° TJ TSTG Parameter Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current, VGE = 15V Clamped Inductive Load Current, VGE = 20V Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 600 12 6.0 18 24 8.0 4.0 24 ± 20 ± 30 77 39 c d Units V A V W °C -55 to + 175 300 (0.063 in. (1.6mm) from case) Thermal Resistance RJC RJC RCS RJA Parameter Junction-to-Case - IGBT Junction-to-Case - Diode e e Case-to-Sink, Flat, Greased Surface Junction-to-Ambient (PCB Mountet, steady-state) g Min. ––– ––– ––– ––– Typ. ––– ––– 0.5 ––– Max. 1.9 6.3 ––– 40 Units °C/W *Qualification standards can be found at http://www.irf.com/ 1 www.irf.com © 2012 International Rectifier October 10, 2012 IRGS4045DPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Min. Typ. Max. Units V(BR)CES V(BR)CES/TJ Collector-to-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Parameter 600 — — — 0.36 1.7 — — 2.0 V V/°C VCE(on) Collector-to-Emitter Saturation Voltage Gate Threshold Voltage Threshold Voltage temp. coefficient Forward Transconductance 2.07 2.14 — -13 5.8 — — — 6.5 — — 25 V VGE(th) VGE(th) /TJ gfe ICES — — 4.0 — — — — — — 1.60 250 2.30 — — 1.30 — — ±100 VFM Collector-to-Emitter Leakage Current Diode Forward Voltage Drop Gate-to-Emitter Leakage Current IGES Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. h Max. V nA — — — 13 3.1 6.4 19.5 4.65 9.6 Eon Eoff Etotal td(on) tr td(off) tf Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time — — — — — — — 56 122 178 27 11 75 17 86 143 229 35 15 93 22 Eon Eoff Etotal td(on) tr td(off) tf Cies Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Input Capacitance — — — — — — — — 140 189 329 26 12 95 32 350 — — — — — — — — Coes Cres Output Capacitance Reverse Transfer Capacitance — — 29 10 — — pF RBSOA Reverse Bias Safe Operating Area FULL SQUARE SCSOA Short Circuit Safe Operating Area 5 — — μs Erec Reverse recovery energy of the diode Diode Reverse recovery time Peak Reverse Recovery Current — 178 74 12 — μJ ns A — — f IC = 6.0A, VGE = 15V, TJ = 150°C IC = 6.0A, VGE = 15V, TJ = 175°C VCE = VGE, IC = 150μA IF = 6.0A IF = 6.0A, TJ = 175°C VGE = ± 20 V Conditions Units Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) — — f VGE = 0V, Ic = 250μA ( 25 -175 oC ) IC = 6.0A, VGE = 15V, TJ = 25°C V o mV/°C VCE = VGE, IC = 250μA ( 25 -175 C ) VCE = 25V, IC = 6.0A, PW =80 s S VGE = 0V,VCE = 600V μA VGE = 0V, VCE = 600V, TJ =175°C Qg Qge Qgc trr Irr Conditions VGE = 0V, Ic =100 μA nC μJ IC = 6.0A VCC = 400V VGE = 15V IC = 6.0A, VCC = 400V, VGE = 15V RG = 47, L=1mH, LS= 150nH, TJ = 25°C E nergy los s es include tail and diode revers e recovery ns μJ IC = 6.0A, VCC = 400V RG = 47, L=1mH, LS= 150nH TJ = 25°C IC = 6.0A, VCC = 400V, VGE = 15V RG = 47, L=1mH, LS= 150nH, TJ = 175°C E nergy los s es include tail and diode revers e recovery ns IC = 6.0A, VCC = 400V RG = 47, L=1mH, LS= 150nH TJ = 175°C VGE = 0V VCC = 30V f = 1Mhz TJ = 175°C, IC = 24A VCC = 500V, Vp =600V RG = 100, VGE = +20V to 0V VCC = 400V, Vp =600V RG = 100, VGE = +15V to 0V TJ = 175oC VCC = 400V, IF = 6.0A VGE = 15V, Rg = 47, L=1mH, LS=150nH Notes:  ‚ ƒ „ … † VCC = 80% (VCES), VGE = 15V, L = 1.0mH, RG = 47 Pulse width limited by max. junction temperature. R is measured at T J approximately 90°C. Refer to AN-1086 for guidelines for measuring V(BR)CES safely. When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. Maximum limits are based on statistical sample size characterization. 2 www.irf.com © 2012 International Rectifier October 10, 2012 IRGS4045DPbF 14 80 12 70 60 50 8 Ptot (W) IC (A) 10 6 40 30 4 20 2 10 0 0 0 20 40 60 80 100 120 140 160 180 0 20 40 60 80 100 120 140 160 180 T C (°C) T C (°C) Fig. 1 - Maximum DC Collector Current vs. Case Temperature Fig. 2 - Power Dissipation vs. Case Temperature 100 100 10μsec 10 10 IC A) IC (A) 100μsec DC 1 1 Tc = 25°C Tj = 175°C Single Pulse 0 0.1 1 10 100 10 1000 100 VCE (V) VCE (V) Fig. 3 - Forward SOA, TC = 25°C, TJ  175°C, VGE = 15V Fig. 4 - Reverse Bias SOA TJ = 175°C, VGE = 20V 20 20 Top V = 18V GE V = 15V GE VGE = 12V 15 V = 10V GE Bottom VGE = 8.0V 10 ICE (A) ICE (A) 15 Top Bottom 10 V = 18V GE V = 15V GE V = 12V GE V = 10V GE V = 8.0V GE 5 5 0 0 0 3 1000 2 4 6 8 10 0 2 4 6 8 10 VCE (V) VCE (V) Fig. 5 - Typ. IGBT Output Characteristics TJ = -40°C; tp = 80μs Fig. 6 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 80μs www.irf.com © 2012 International Rectifier October 10, 2012 IRGS4045DPbF 20 Top Bottom 18 16 -40°C 25°C 175°C 14 12 IF (A) ICE (A) 15 20 V = 18V GE V = 15V GE V = 12V GE V = 10V GE V = 8.0V GE 10 10 8 6 5 4 2 0 0 0 2 4 6 8 10 0.0 1.0 2.0 VCE (V) Fig. 8 - Typ. Diode Forward Characteristics tp = 80μs 10 10 8 8 ICE = 3.0A VCE (V) VCE (V) Fig. 7 - Typ. IGBT Output Characteristics TJ = 175°C; tp = 80μs 6 ICE = 6.0A ICE = 12A 4 2 6 ICE = 3.0A ICE = 6.0A ICE = 12A 4 2 0 0 5 10 15 20 5 10 VGE (V) 20 Fig. 10 - Typical VCE vs. VGE TJ = 25°C 20 IC, Collector-to-Emitter Current (A) 10 8 VCE (V) 15 VGE (V) Fig. 9 - Typical VCE vs. VGE TJ = -40°C ICE = 3.0A ICE = 6.0A 6 ICE = 12A 4 2 18 T J = 25°C T J = 175°C 16 14 12 10 8 6 4 2 0 0 5 10 15 20 VGE (V) Fig. 11 - Typical VCE vs. VGE TJ = 175°C 4 3.0 VF (V) www.irf.com © 2012 International Rectifier 4 6 8 10 12 14 16 VGE, Gate-to-Emitter Voltage (V) Fig. 12 - Typ. Transfer Characteristics VCE = 50V; tp = 10μs October 10, 2012 IRGS4045DPbF 400 1000 350 Swiching Time (ns) Energy (μJ) 300 250 200 EOFF 150 tdOFF 100 tF tdON 10 tR EON 100 50 1 0 2 4 6 8 10 12 14 2 4 8 10 12 14 IC (A) IC (A) Fig. 13 - Typ. Energy Loss vs. IC TJ = 175°C; L = 1mH; VCE = 400V, RG = 47; VGE = 15V. Fig. 14 - Typ. Switching Time vs. IC TJ = 175°C; L=1mH; VCE= 400V RG= 47; VGE= 15V 220 1000 200 EOFF Swiching Time (ns) 180 Energy (μJ) 6 160 EON 140 120 tdOFF 100 tF tdON 10 tR 100 80 60 1 0 25 50 75 100 125 0 25 100 125 Fig. 16- Typ. Switching Time vs. RG TJ = 175°C; L=1mH; VCE= 400V ICE= 6.0A; VGE= 15V Fig. 15 - Typ. Energy Loss vs. RG TJ = 175°C; L = 1mH; VCE = 400V, ICE = 6.0A; VGE = 15V 22 30 20 25 RG = 10 18 20 16 15 IRR (A) IRR (A) 75 RG () Rg () RG = 22 10 RG = 47 5 RG = 100 14 12 10 8 6 0 2 4 6 8 10 12 14 IF (A) Fig. 17 - Typical Diode IRR vs. IF TJ = 175°C 5 50 www.irf.com © 2012 International Rectifier 0 25 50 75 100 125 RG ( Fig. 18 - Typical Diode IRR vs. RG TJ = 175°C; IF = 6.0A October 10, 2012 IRGS4045DPbF 1200 20 18 1000 12A 10 QRR (nC) IRR (A) 16 14 12 22 800 47 6.0A 600 10 100 400 3.0A 8 200 6 0 200 400 600 800 1000 0 1200 500 diF /dt (A/μs) 1500 Fig. 20 - Typical Diode QRR VCC= 400V; VGE= 15V; TJ = 175°C Fig. 19- Typical Diode IRR vs. diF/dt VCC= 400V; VGE= 15V; ICE= 6.0A; TJ = 175°C 350 50 20 300 40 Time (μs) RG = 47 10 30 5 20 Current (A) Isc RG = 22 200 Tsc 15 RG = 10 250 Energy (μJ) 1000 diF /dt (A/μs) 150 RG = 100 100 50 10 0 2 4 6 8 10 12 14 8 10 12 IF (A) 18 Fig. 22- Typ. VGE vs. Short Circuit Time VCC=400V, TC =25°C 1000 16 VGE, Gate-to-Emitter Voltage (V) Cies Capacitance (pF) 16 VGE (V) Fig. 21 - Typical Diode ERR vs. IF TJ = 175°C 100 Coes 10 Cres 1 V CES = 400V 14 V CES = 300V 12 10 8 6 4 2 0 0 100 200 300 400 500 VCE (V) Fig. 23- Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz 6 14 www.irf.com © 2012 International Rectifier 0 2 4 6 8 10 12 14 Q G, Total Gate Charge (nC) Fig. 24 - Typical Gate Charge vs. VGE ICE = 6.0A, L=600μH October 10, 2012 IRGS4045DPbF Thermal Response ( Z thJC ) 10 1 D = 0.50 0.20 0.10 0.05 0.1 J 0.02 0.01 R1 R1 J 1 R3 R3 Ri (°C/W) i (sec) R4 R4 C  2 1 2 3 3 4 4 Ci= iRi Ci iRi SINGLE PULSE ( THERMAL RESPONSE ) 0.01 R2 R2 0.0301 0.000004 0.7200 0.000067 0.7005 0.000898 0.4479 0.005416 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) 10 Thermal Response ( Z thJC ) D = 0.50 0.20 1 0.10 0.05 J 0.02 0.1 0.01 R1 R1 J 1 R2 R2 R3 R3 C  2 1 2 3 3 Ci= iRi Ci iRi SINGLE PULSE ( THERMAL RESPONSE ) 0.01 1E-006 1E-005 0.0001 Ri (°C/W) i (sec) R4 R4 4 4 0.2056 0.000019 1.4132 0.000095 3.3583 0.001204 1.8245 0.009127 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) 7 www.irf.com © 2012 International Rectifier October 10, 2012 IRGS4045DPbF L L DUT 0 VCC 1K Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.3 - S.C.SOA Circuit Fig.C.T.5 - Resistive Load Circuit 8 www.irf.com © 2012 International Rectifier 80 V + - DUT Rg 480V Fig.C.T.2 - RBSOA Circuit Fig.C.T.4 - Switching Loss Circuit Fig.C.T.6 - Typical Filter Circuit for V(BR)CES Measurement October 10, 2012 IRGS4045DPbF 600 12 600 500 10 500 400 8 400 6 300 30 25 tr TEST CURRENT 90% ICE 200 4 5% ICE 100 VCE (V) VCE (V) tf 300 90% test current 2 100 0 0 -2 -100 10 10% test current 0 0.2 0.4 0.6 0.8 0 Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 175°C using Fig. CT.4 100 t RR -5 -400 -10 -500 -15 -20 0.05 0.15 0.25 time (µS) WF.3- Typ. Diode Recovery Waveform @ TJ = 175°C using CT.4 9 www.irf.com © 2012 International Rectifier Vce (V) VF (V) 10% Peak IRR Peak IRR -600 -0.05 450 5 0 80 500 10 QRR -200 -300 4.7 Fig. WF2 - Typ. Turn-on Loss Waveform @ TJ = 175°C using Fig. CT.4 15 -100 4.5 -5 time (µs) time(µs) 0 Eon Loss 4.3 1 5 5% VCE Eoff Loss -100 -0.2 15 200 5% VCE 0 20 VCE 70 400 60 350 50 300 40 250 200 30 ICE 20 150 10 100 0 50 -10 0 -20 -2 -1 0 1 2 3 4 5 6 7 8 Time (uS) WF.4- Typ. Short Circuit Waveform @ TJ = 25°C using CT.3 October 10, 2012 IRGS4045DPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information 7+,6,6$1,5)6:,7+ /27&2'( $66(0%/('21:: ,17+($66(0%/